210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E1 - Solid-State Joint General Session

Dielectric Science and Technology/Electronics and Photonics
 

Tuesday, October 31, 2006

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o 972 Defect Reduction in Plasma-Enhanced CVD Borophosphosilicate Glass Films Y. V. Sokolov, M. Daggubati and Q. Wang (Fairchild Semiconductor)
o 973 Radical Oxidation on Ultra Pure Silicon Surface K. Kawase (Mitsubishi Electric Corp.), M. Higuchi, T. Suwa (Tohoku University), H. Umeda, M. Inoue (RENESAS Technology Corporation), A. Teramoto, T. Hattori, S. Sugawa and T. Ohmi (Tohoku University)
o 974 Electrochemical Deposition and Characterization of Ni-ZrP2O7 Nano-Composites H. Kim (KITECH), J. Jung, Y. Kim (Seoul National University), Y. Kim and S. Shin (KITECH)
o 975 Crystal Extension of Delta Phase in SbxTe100-x Phase Change Binary Alloy Along Longitudinal Axis without Phase Separation Y. Kim (Korea Institute of Science and Technology), C. Sun, J. Lee (Korea Advanced Institute of Science and Technology), M. Youm (Korea Institute of Science and Technology) and A. Wakahara (Toyohashi Univ. of Tech.)
o 976 Properties of Borophosphosilicate Glass Films Grown with Different Nitrous to Silane Ratios Using Plasma-Enhanced CVD M. Daggubati, Y. V. Sokolov (Fairchild Semiconductor), D. Roy (Fairchild Semiconductor Corp.) and Q. Wang (Fairchild Semiconductor)
o 977 Surface Energy and Equilibrium Shape of Hexagonal Structured Ge2Sb2Te5 Grain Y. Kim, Y. Park, M. Youm (Korea Institute of Science and Technology) and A. Wakahara (Toyohashi Univ. of Tech.)
o 978 Substrate Effect on Chemical Reaction - A Computational Simulation S. Itoh (TOSHIBA Corp.)
o 979 The Dehydration Effect on the MgO Protecting Layer in AC-PDP S. Moon, T. Heo, S. Park, J. Kim and H. Kim (Seoul National University)
o 980 Gas Flow Effects on MgO Thin Films Deposited by E-Beam Evaporation Method T. Heo, S. Moon, S. Park, J. Kim and H. Kim (Seoul National University)
o 981 Morphology of the Surface of the Polycrystalline and Single-Crystal SiC Treated with pure NF3 Plasma and Analysis of Chemical Reaction of SiC with NF3 T. Kanatani (Doshisha University), T. Tojo (Toyotanso Co.Ltd), M. Tanaka (Sumitomo Osaka Semento Co.Ltd), M. Inaba and A. Tasaka (Doshisha University)
o 982 Study of Corrosion-Wear Behavior of AISI 304L by Elecrochemical Noise J. Celis (Katholieke Universiteit Leuven), P. Ponthiaux (Ecole Centrale Paris) and A. Berradja (Katholieke Universiteit Leuven)
 

Wednesday, November 1, 2006

Universal 14, 1st Floor, Expo Center

Session 1

Co-Chairs: K. Sundaram and R. Todi
TimeAbs#Title and Authors
10:00 983 Thermal Oxide Grown on High Index Silicon Wafers. R. Rodríguez (Instituto Nacional de Astrofísica Óptica y Electrónica), F. De la Hidalga, A. Torres (Instituto Nacional de Astrfísica Óptica y Electrónica) and D. L. Kendall (STAR MEGA)
10:20 984 Minimizing Material Loss and Surface Roughness During the Thermal Annealing of Al Implants in SiC D. Meyer, G. Ritter and U. Keim (Centrotherm)
10:40 985 Effective Charge Density (Neff) in MOS Structures Fabricated on High Index Silicon Wafers. R. Rodríguez (Instituto Nacional de Astrofísica Óptica y Electrónica), F. De la Hidalga, A. Torres (Instituto Nacional de Astrfísica Óptica y Electrónica) and D. L. Kendall (STAR MEGA)
11:00 986 Effects of Annealing Condition on Low-k a-SiOC:H Thin Films J. Heo and H. Kim (Seoul National University)
11:20 987 Silicon Pillar Fabricated for SGT with Varying the Content of O2 in Cl2/O2 Gases by Using ECR Plasma Etching T. Hidaka, H. Amikawa, H. Nakamura and F. Masuoka (Tohoku university)
 

Session 2

Co-Chairs: S. Seal and R. Rodriguez
TimeAbs#Title and Authors
14:00 988 Integrated Precision Polysilicon Resistors J. M. Towner and J. J. Naughton (AMI Semiconductor)
14:20 989 Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices T. Hoang, P. LeMinh, J. Holleman (University of Twente) and J. Schmitz (MESA+ Institute for Nanotechnology, University of Twente)
14:40 990 Mechanical and Dielectric Properties of Pure-Silica-Zeolite Low-k Materials C. M. Lew, Z. Li, M. Johnson, M. Sun (University of California, Riverside), E. Ryan (Advanced Micro Devices, Inc.), D. Earl (Rice University), W. Maichen (Teradyne, Inc.), J. Martin (Advanced Micro Devices, Inc.), S. Li, J. Wang (University of California, Riverside), M. Deem (Rice University), M. Davis (California Institute of Technology) and Y. Yan (University of California, Riverside)
15:00 991 Loading Effects in the Selective Epitaxial Growth of n-Type Doped SiGe-Structures with LPCVD M. W. Schindler, O. Senftleben, I. Eisele (University of the German Federal Armed Forces Munich) and W. Taylor (Freescale Semiconductor Inc.)
15:20 992 A Novel Technique for Measurement of Thermodynamic and Transport Properties of Materials during Chemical, Phase and Structural Transformations in a Wide Range of Temperatures E. Litovsky, V. Issoupov, S. Horodetsky, J. Kleiman (Integrity Testing Laboratory Inc.) and S. Stromness (INCO Technical Services Ltd.)
 

Session 3

Co-Chairs: V. Desai and K. Sundaram
TimeAbs#Title and Authors
16:00 993 Concept and Realization of the Formation of Metastable Tetragonal (Zr1-xCex)O2 Nanocrystals in Aqueous Solutions M. Yoshimura, A. Ahniyaz, T. Watanabe, N. Sakamoto and T. Taniguchi (Tokyo Institute of Technology)
16:40 994 Modeling and Mechanical Testing of Micro-Tubular SOFC N. M. Sammes (The University of Connecticut), W. McPhee, A. Mohammadi, J. Tang (University of Connecticut), M. Awano (National Insutitute of Advanced Industrial Science and Technolog (AIST)) and A. L. Smirnova (University of Connecticut)
17:00 995 Zirconia and Ceria Based Electrolyte Materials for Microtubular SOFCs J. Pusz, A. L. Smirnova (University of Connecticut), N. M. Sammes (The University of Connecticut), O. Vasyliev (Frantcevych Institute for Problems of Materials Science) and M. Awano (National Insutitute of Advanced Industrial Science and Technolog (AIST))
17:20 996 Parameters Influencing the Corrosion Behavior of Brazed Material AA4343/AA3003/AA4343 in Neutral Media N. Pebere (CIRIMAT), S. Tierce, C. Blanc (CIRIMAT/UMR CNRS 5085), C. Casenave (VALEO), G. Mankowski (CIRIMAT/UMR CNRS 5085) and H. Robidou (VALEO)