210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E10 - Wide Bandgap Semiconductor Materials and Devices 7

Electronics and Photonics/Sensor
 

Tuesday, October 31, 2006

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs: E. Stokes, J. Bardwell, R. Fitch, D. Merfeld, P. Shen and J. Han
TimeAbs#Title and Authors
o 1303 Heteroepitaxial Growth of 3C-SiC(111) on Si(110) Substrate Using Monomethylsilane A. Konno (Tohoku University), Y. Narita (Kyushu Institute of Technology), T. Itoh (Tohoku University), K. Yasui (Nagaoka Univ. of Technology), H. Nakzawa (Hirosaki University), T. Endoh and M. Suemitsu (Tohoku Univ.)
o 1304 Homoepitaxial Growth of Vanadium Doped Semi-Insulating 4H-SiC by Bis-Trimethylsilylmethane and Bis-Cyclopentadienylvanadium Precursors H. Song, J. Heo, H. Seo, J. Moon, J. Yim, J. Lee, S. Kwon, Y. Ahn and H. Kim (Seoul National University)
o 1305 Electrical Characterization of Novel GaN Light Emitting Diodes with II-VI Quantum Dot Active Layers K. N. Patel (University of North Carolina-Charlotte), E. B. Stokes (University of North Carolina at Charlotte), J. G. Pagan (University of North Carolina-Charlotte), C. C. Burkhart (University of North Carolina at Charlotte) and P. Barletta (UNC Charlotte)
o 1306 Ionization of Acceptors in Be-Doped Al0.42Ga0.58N with IR Optical Pumping M. D. Hodge, E. B. Stokes and P. Batoni (University of North Carolina at Charlotte)
o 1307 Surface Study of P-Type MBE Gallium Nitride Growth over CdSe Quantum Dots C. C. Burkhart, C. C. Burkhart (University of North Carolina at Charlotte), K. N. Patel, J. G. Pagan (University of North Carolina-Charlotte), P. Barletta (UNC Charlotte) and E. B. Stokes (University of North Carolina at Charlotte)
 

Wednesday, November 1, 2006

Universal 4, 1st Floor, Expo Center

Substrates & Growth

Co-Chairs: E. Stokes and J. Bardwell
TimeAbs#Title and Authors
08:00 1308 Bulk GaN Crystal Growth by the High Pressure Ammonothermal Method M. D'Evelyn, H. Hong, D. Park, H. Lu, M. Peterson, B. Badding, R. Melkote (GE Global Research), P. Perlin, M. Lesczynski, S. Porowski (TopGaN) and R. Molnar (Lincoln Labs, MIT)
08:30 1309 Native AlN Substrates for High Performance AlGaN/AlN Device Applications J. A. Smart, W. Liu, S. Schujman, K. Morgan, R. Bondokov and L. Schowalter (Crystal IS, Inc)
09:00 1310 Recent Achievements of the GaN Epitaxy by MBE on Silicon and Engineering Substrates J. Thuret (PicoGiga Inc), P. Bove and H. Lahreche (Picogiga)
09:30 1311 Heteroepitaxial Growth of 3C-SiC on Silicon-Porous Silicon-Silicon (SPS) Substrates A. Severino, G. D`Arrigo (CNR-IMM), S. Leone, M. Mauceri, G. Abbondanza (Epitaxial Technology Center), A. Terrasi (University of Catania) and F. La Via (CNR-IMM)
09:50 1312 Light Enhanced MOCVD Growth of GaN A. Escobosa, V. Sanchez-R and V. Elyukhin (CINVESTAV-IPN)
10:10 Intermission (20 Minutes)
 

Light Emitting Diodes

Co-Chairs: D. Merfeld and P. Shen
TimeAbs#Title and Authors
10:30 1313 High-Power and High-Efficiency Light-Emitting Diodes N. F. Gardner (Philips Lumileds Lighting Company)
11:00 1314 Carrier Lifetimes in GaN Revealed by Studying Photoluminescence Decay in Time and Frequency Domains G. Tamulaitis, J. Mickevicius, P. Vitta, A. Zukauskas (Vilnius University), M. Shur (Rensselaer Polytechnic Institute, Troy, NY, US), K. Liu (Rensselaer Polytechnic Institute), Q. Fareed, J. Zhang and R. Gaska (Sensor Electronic Technology, Inc.)
11:30 1315 Development of Yellow and White LED's Using InGaN-based Multi-Quantum well Structures S. M. Bedair (NC STATE UNIVERSITY), P. Barletta (UNC Charlotte), A. Berkman (NC STATE UNIVERSITY), A. Emara, M. Reed (North Carolina State University) and N. A. El-Masry (NC State University)
11:50 1316 CdZnO/ZnO Heterostructures for UV-Visible Light Emitters A. V. Osinsky (SVT Asociates), J. Dong, B. Hertog, A. M. Dabiran (SVT Associates, Inc.), P. Chow (SVT Asociates), W. Schoenfeld (University of Central Florida), S. J. Pearton (Materials Science and Engineering, University of Florida), D. Look (Wright State University) and A. Cartwright (University at Buffalo)
12:10 1317 Recent Progress in the Development of Quantum Dot Light Emitting Diodes J. G. Pagan (University of North Carolina-Charlotte), E. B. Stokes (University of North Carolina at Charlotte) and K. N. Patel (University of North Carolina-Charlotte)
 

Electronic Devices

Co-Chairs: J, Han and R. Fitch
TimeAbs#Title and Authors
14:00 1318 Novel Thermally Stable Contacts to GaN L. Stafford (University of Florida), R. Khanna, L. Voss, S. J. Pearton (Materials Science and Engineering, University of Florida) and F. Ren (University of Florida)
14:30 1319 GaN-Based Devices for Reliable Operation at Very High Temperatures A. M. Dabiran (SVT Associates, Inc.), A. V. Osinsky, A. Wowchak, P. Chow (SVT Asociates), S. J. Pearton, R. Khanna (Materials Science and Engineering, University of Florida), I. Kravchenko and F. Ren (University of Florida)
15:00 1320 Low-Dark-Current SiC Avalanche Photodiodes J. C. Campbell, X. Guo (University of Virginia), A. Beck (University of Texas), H. Liu and D. McIntosh (University of Virginia)
15:30 1321 1500V SiC DIMOSFET Development J. B. Tucker, K. Matocha, R. Beaupre and V. Tilak (GE Global Research)
16:00 1322 The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs J. Bardwell, S. Haffouz (Institute for Microstructural Sciences), R. McKinnon (National Reserach Council of Canada), C. Storey, H. Tang, G. Sproule, D. Roth and R. Wang (Institute for Microstructural Sciences)
16:20 1323 Wide Bandgap Devices with Non-Ohmic Contacts G. Simin (University of South Carolina)
 

Thursday, November 2, 2006

Universal 4, 1st Floor, Expo Center

II-VI materials

Co-Chairs: J. Bardwell and P. Shen
TimeAbs#Title and Authors
08:30 1324 Multifunctional ZnO and Its Nanostructures for Device Applications Y. Lu (Rutgers University)
09:00 1325 Optical Characterization of ZnCdO Alloys Grown by Molecular-Beam Epitaxy I. A. Buyanova, X. Wang, W. M. Chen (Linkoping university), M. Izadifard (Shahrood University of Technology), D. Norton (University of Florida), S. J. Pearton (Materials Science and Engineering, University of Florida), A. V. Osinsky (SVT Asociates), J. Dong and A. M. Dabiran (SVT Associates, Inc.)
09:20 1326 CdS Roughness by Anti-Stokes Raman Spectroscopy J. Molina-Contreras (Instituto Tecnológico de Aguascalientes), C. Frausto-Reyes (Centro de Investigaciones en Óptica A.C.), C. Medina-Gutierrrez (Universidad de Guadalajara, Unidad los Lagos) and S. Calixto (Centro de Investigaciones en Óptica A.C.)
09:40 1327 Electrochemical Deposition of ZnSe Thin Films on Copper R. Kowalik, K. Fitzner and P. Zabinski (AGH University of Science and Technology)
10:00 Intermission (20 Minutes)
 

Emerging Materials

Co-Chairs: E. Stokes and D. Merfeld
TimeAbs#Title and Authors
10:20 1328 Ferromagnetic Properties of GaGdN Co-Doped with Si J. Hite, R. M. Frazier, R. P. Davies, G. T. Thaler, C. R. Abernathy (University of Florida), S. J. Pearton (Materials Science and Engineering, University of Florida) and J. M. Zavada (Army Research Office)
10:50 1329 Optical Properties of GaN Nanowhiskers Produced by Photoelectrochemical Etching H. Ng, R. Geiss, A. Chowdhury, M. Sergent (Bell Labs, Lucent Technologies), S. Srinivasan and F. Ponce (Arizona State University)
11:10 1330 Direction Dependent Homo-Epitaxial Growth and Properties of Gallium Nitride Nanowires M. K. Sunkara, R. Makkena, H. Li and B. Alphenaar (University of Louisville)
11:30 1331 Doped Wide Bandgap Materials and Devices from Semiconducting Boron Carbide B. W. Montag (Univ. of Nebraska and Nebraska Wesleyang), N. Platt, N. Boag (University of Salford) and J. I. Brand (University of Nebraska-Lincoln)
11:50 1332 Luminescence Properties of Dy Implanted AlN Thin Films W. M. Jadwisienczak (Ohio University), H. Lozykowski (Ohio University, School of EECS), A. Bensaoula, C. Boney (University of Houston) and A. Anders (Lawrence Berkeley Laboratory, University of California Berkeley)
12:10 1333 Temperature Dependence in Boron Carbide Diodes O. Barrios Flores and J. I. Brand (University of Nebraska-Lincoln)