210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E12 - Semiconductor Wafer Bonding 9: Science, Technology, and Applications

Electronics and Photonics
 

Tuesday, October 31, 2006

Universal 22, 1st Floor, Expo Center

Wafer Bonding for Advanced Device Appliactions I

Co-Chairs: B. Faure and K. Hobart
TimeAbs#Title and Authors
08:00 1352 Can Three-Dimensional Devices Extend Moore's Law Beyond the 32 nm Technology Node? M. Orlowski and A. Wild (Freescale Semiconductor)
08:40 1353 New Heterostructures and 3D Devices Obtained at CEA/LETI by the Bonding and Thinning Method L. Di Cioccio (CEA)
09:20 1354 Automotive Semiconductor Devices Using Bonded SOI Wafers S. Fujino and H. Himi (DENSO CORPORATION)
09:40 Intermission (20 Minutes)
 

Advanced Materials

Co-Chairs: R. Knechtel and T. Suga
TimeAbs#Title and Authors
10:00 1355 New Generation of Structures Obtained by Direct Wafer Bonding of Processed Wafers B. Aspar and C. Lagahe-Blanchard (TRACIT Technologies)
10:40 1356 Sequential Activation Process of O2 RIE and N2 Radical for LiTaO3 and Si Wafer Bonding Y. Zikuhara (The University of Tokyo), E. Higurashi (Graduate School of Engineering, The University of Tokyo), N. Tamura (KOIKE co.,LTD) and T. Suga (The University of Tokyo)
11:00 1357 Strained Silicon via Plasma Enhanced dTCE Bonding S. Sood and R. Belford (Belford Research Inc.)
11:20 1358 Highly-Strained Silicon-on-Insulator Development T. Akatsu (SOITEC), J. Hartmann (CEA-LETI), C. Aulnette, Y. Le Vaillant (Soitec S.A.), D. Rouchon (CEA-LETI), A. Abbadie (SOITEC), Y. Bogumilowicz (CEA-LETI), L. Portigliatti, C. Colnat, N. Boudou, F. Lallement, F. Triolet, C. Figuet, M. Martinez, P. Nguyen, C. Delattre, K. Tsyganenko (Soitec S.A.), C. Berne (Soitec), F. Allibert (Soitec S.A.) and C. Deguet (CEA-LETI)
11:40 1359 Evolution of Lattice Strain in Hydrogen-Implanted Silicon Prior to Layer Splitting: an X-Ray Scattering Study L. Capello (CEA), F. Rieutord (CEA Grenoble), A. Tauzin, F. Mazen (CEA-LETI Grenoble), N. Sousbie and F. Letertre (SOITEC)
12:00 1360 InAs on Insulator by Hydrogen Implantation and Exfoliation S. L. Hayashi, A. Noori (University of California, Los Angeles), A. Cavus, A. Gutierrez-Aitken (Northrop Grumman Space Technology) and M. S. Goorsky (UCLA)
 

Low Temperature/ Plasma Wafer Bonding

Co-Chairs: B. Aspar and J. Raskin
TimeAbs#Title and Authors
14:00 1361 Low Temperature Void Free Hydrophilic or Hydrophobic Silicon Direct Bonding F. Fournel (CEA-DRT-Léti), H. Moriceau (CEA DRT LETI DIHS/LTFC) and R. Beneyton (CEA-DRT-LETI)
14:20 1362 Plasma Activated Wafer Bonding of Silicon: in Situ and Ex Situ Processes V. Dragoi and P. Lindner (EV Group)
14:40 1363 Cu-Cu Room Temperature Bonding - Current Status of Surface Activated Bonding(SAB) - T. Suga (The University of Tokyo)
15:00 1364 Low Temperature Bonding of PECVD Silicon Dioxide Layers P. T. Baine, M. Bain (Queens University of Belfast), D. McNeill, H. Gamble (Queen's University of Belfast) and M. Armstrong (Queens Univeristy)
15:20 Intermission (20 Minutes)
15:40 1365 Atmospheric Plasma Conditions Compatible with Wafer to Wafer Bonding Strategies S. N. Farrens (Suss MicroTec) and M. Gabriel (SUSS MicroTec Lithography GmbH)
16:00 1366 Comparison of Plasma Assisted Low-Temperature Hydrophobic and Hydrophilic Wafer Bonding M. P. Breninford, D. Bailey, H. Ikram, C. A. Colinge and S. Holl (CSUS)
16:20 1367 Plasma Activated Wafer Bonding as an Alternative to Standard Wafer Bonding Processes V. Dragoi, T. Matthias, G. Mittendorfer and P. Lindner (EV Group)
16:40 1368 Sequential Plasma Activation Process for Silicon Direct Bonding M. R. Howlader (McMaster University), H. Itoh, T. Suga (The University of Tokyo) and M. Kim (University of Texas at Dallas)
 

Wednesday, November 1, 2006

Universal 22, 1st Floor, Expo Center

Wafer Bonding for Advanced Device Applications II

Co-Chairs: M. Orlowski and S. Bengtsson
TimeAbs#Title and Authors
10:00 1369 Thin Film Transfer for the Fabrication of Multiple Gate MOS Transistors J. Raskin (Université catholique de Louvain)
10:40 1370 Triple Stack Bonding for High Voltage Si Devices K. D. Hobart (The Naval Research Laboratory), F. J. Kub, B. F. Phlips, J. D. Kurfess (Naval Research Laboratory) and J. Neilson (JMSN)
11:00 1371 Fabrication Techniques for Thin-Film Silicon Layer Transfer for Flexible Substrates and 3D Structures S. Holl, R. Varasala, H. Jawanda, C. A. Colinge (CSUS), K. D. Hobart (The Naval Research Laboratory) and F. J. Kub (Naval Research Laboratory)
11:20 1372 Si-Based Resonant Tunneling Devices Using UHV Wafer Bonding M. Kim (University of Texas at Dallas), T. Lee (Universityof Texas at Dallas), J. Kim (University of Texas at Dallas), R. M. Wallace and B. Gnade (Universityof Texas at Dallas)
11:40 1373 Silicon Wafer Bonding for use in Fuel Cells S. Petrovic (Arizona State University)
 

Interfacial Properties

Co-Chairs: A.Sanz-Velasco and H. Moriceau
TimeAbs#Title and Authors
14:00 1374 Rough Surface Adhesion Mechanisms for Wafer Bonding F. Rieutord (CEA Grenoble), H. Moriceau (CEA DRT LETI DIHS/LTFC), R. Beneyton (CEA-DRT-LETI) and L. Capello (CEA)
14:40 1375 Relation Between Electrical and Mechanical Characteristics of Low-Temperature Bonded Si/Si Interfaces B. Raeissi, A. Sanz-Velasco and O. Engström (Chalmers University of Technology)
15:00 1376 Quantitative Model-Based Interpretation of Experimentally Measured Nanoscale Stress Sources at Wafer Bonded Interfaces G. Horn, H. Johnson (University of Illinois at Urbana-Champaign), T. Mackin (California Polytechnic State University) and J. Lesniak (Stress Photonics)
15:20 1377 Effect of Surface Treatments on Si-Si Wafer Bonding: Bonding Void Decrease R. Beneyton (CEA-DRT-LETI), F. Fournel (CEA-DRT-Léti), F. Rieutord (CEA Grenoble), C. Morales and H. Moriceau (CEA DRT LETI DIHS/LTFC)
15:40 Intermission (20 Minutes)
16:00 1378 Non-Destructive Strength Characterization of Full-Wafer Bonds: A Modified Blister Test Method Enables a Controlled Crack Formation at the Bond Interface M. Rabold, A. Doll, F. Goldschmidtböing and P. Woias (University of Freiburg - IMTEK)
16:20 1379 Controlled Silicon Surface Periodic Nanopatterning by Direct Wafer Bonding A. Bavard, J. Mézière, F. Fournel (CEA-DRT-Léti), A. Pascale, P. Gentile and J. Eymery (CEA-Grenoble DRFMC/SP2M)
16:40 1380 Comparision of the Mechanical Properties of Low Temperature Bonded Test Samples J. Bagdahn, M. Bernasch (Fraunhofer Institute for Mechanics of Materials) and M. Wiemer (Fraunhofer Institute)
17:00 1381 Direct Wafer Bonding Enhanced by Ductile Layers Inserted Near the Interface B. Olbrechts, B. Lejeune, Y. Bertholet, T. Pardoen and J. Raskin (Université catholique de Louvain)
 

Thursday, November 2, 2006

Universal 22, 1st Floor, Expo Center

Photonic Applications of Wafer Bonding

Co-Chairs: F. Rieutord and C. Colinge
TimeAbs#Title and Authors
09:00 1382 Review of Compound Materials Bonding and Layer Transfer for Optoelectronic Applications B. Faure (Soitec)
09:40 Intermission (20 Minutes)
10:00 1383 Simple Technological Process for the Fabrication of Optical III-V Nanowires Integrated into a Benzocyclobutene Matrix M. Carette, L. Denis, V. Jean-Pierre, D. Bernard and D. Didier (CNRS UMR 8520)
10:20 1384 Dislocation-Induced Light Emission M. Reiche (Max-Planck-Institut für Mikrostrukturphysik), M. Kittler (IHP microelectronics), T. Wilhelm (MPI für Mikrostrukturphysik), T. Arguirov (IHP/BTU Joint Lab), W. Seifert (IHP microelectrinics) and X. Yu (IHP microelectronics)
10:40 1385 Adhesive Bonding of III-V Dies to Processed SOI Using BCB for Photonic Applications G. Roelkens, B. Batalliou, J. Brouckaert, F. Van Laere, D. Van Thourhout and R. Baets (Ghent University)
11:00 1386 Wafer Bonding of CdZnTe / Si Structures M. S. Goorsky and C. Miclaus (UCLA)
11:20 1387 Enhance the Luminance Intensity of InGaN-GaN Light-Emitting Diode by Roughening both the p-GaN Surface and the Undoped-GaN Surface Using Wafer Bonding Methods Y. S. Wu and W. Wei Chih (National Chiao Tung University)
 

Wafer Bonding for MEMS Applications

Co-Chairs: L. Di Cioccio and H. Baumgart
TimeAbs#Title and Authors
14:00 1388 Wafer Bonding Technologies in Industrial MEMS Processing - Potentials and Challenges R. Knechtel (X-FAB Semiconductor Foundries AG)
14:40 1389 Low Temperature Plasma-Assisted-Wafer-Bonding for MEMS A. Sanz-Velasco, M. Bring and P. Enoksson (Chalmers University of Technology)
15:20 1390 Moisture Resisitant Nano Liter Packages Using Metallic Seal Wafer Bonding W. H. Reinert, P. Merz and O. Schwarzelbach (Fraunhofer ISIT)
15:40 Intermission (20 Minutes)
16:00 1391 Adhesive Wafer Bonding with SU-8 Intermediate Layers for Microfluidic Applications V. Dragoi, G. Mittendorfer, C. Thanner, T. Matthias, T. Glinsner and P. Lindner (EV Group)
16:20 1392 Anodic and Direct Bonding of Si and Glass - Similarities and Distinctions in Applications M. Gabriel, V. Cetin (SUSS MicroTec Lithography GmbH), T. Ludewig (Fraunhofer Institut Photonische Mikrosysteme) and M. Eichler (Fraunhofer-Institut für Schicht- und Oberflächentechnik)