210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E13 - SiGe: and Germanium Materials, Processing, and Devices

Electronics and Photonics
 

Monday, October 30, 2006

Galactic 1, Conference Center, Sunrise

Plenary

Co-Chairs: D. Harame
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10 1393 Channel Material Innovations for Continuing the Historical MOSFET Performance Increase with Scaling D. A. Antoniadis, A. Khakifirooz, I. Aberg, C. Ní Chléirigh, O. Nayfeh and J. L. Hoyt (MIT)
11:00 1394 CMOS Photonicsâ„¢ For High Speed Interconnects C. Gunn (Luxtera, Inc.)
 

Transport in Strained FET Channel

Co-Chairs: K. DeMeyer and H. Shang
TimeAbs#Title and Authors
13:05 1395 Carrier Transport and Stress Engineering in Ultrathin-body SOI MOSFETs K. Uchida (Toshiba Corp)
13:35 1396 Electron Transport in Engineered Substrates: Strain and Orientation Effects M. Fischetti (University of Massachussets, Amherst), S. Narayanan, T. O'Regan and C. Sachs (University oif Massachusetts, Amherst)
14:05 1397 Low-Field Electron Mobility in Stressed UTB SOI MOSFETs for Different Substrate Orientations E. Ungersboeck (Institute for Microelectronics), V. Sverdlov (Institute for Microelectronics, TU Wien), H. Kosina (Technische Universität Wien) and S. Selberherr (TU Wien)
14:25 1398 First Self-Consistent Full-Band - 2D Monte Carlo - 2D Poisson Device Solver for Modeling SiGe p-Channel Devices D. Vasileska (ASU), S. Krishnan (Arizona State University) and M. Fischetti (University of Massachussets, Amherst)
14:45 1399 Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels M. Östling, J. Hållstedt, M. von Haartman, P. Hellström and H. Radamson (Royal Institute of Technology (KTH))
 

Photodetectors and Resonators

Co-Chairs: D.-X. Xu and N. Usami
TimeAbs#Title and Authors
15:20 1400 Performance and Reliability of SiGe Photodetectors O. I. Dosunmu, M. Morse, Y. Chetrit and G. Sarid (Intel Corporation)
15:50 1401 Fast Ge-on-Si Photodetectors for the Near Infrared L. Colace, G. Masini, G. Assanto (University of Roma Tre), H. Luan and L. Kimerling (Massachusetts Institute of Technology)
16:20 1402 Ge-on-Insulator Photodetectors for High-Speed Optical Interconnects S. Koester, L. Schares, C. L. Schow, J. D. Schaub (IBM), G. Dehlinger (Infineon) and J. O. Chu (IBM)
16:50 1403 Design of Spontaneous Emission Enhancement Based on Si Ring Resonators Y. Miki (The University of Tokyo), K. Yamada, T. Watanabe, T. Tsuchizawa, H. Fukuda, S. Itabashi (NTT), H. Ozaki, S. Hirano and K. Wada (The University of Tokyo)
17:10 1404 The Process and Aptoelectronic Characterization of Ge-on-Insulator C. Lin, C. Yu, M. Liao, C. Huang, C. Lee, C. Lee and C. Liu (National Taiwan University)
 

Short Presentations

Co-Chairs: J. Cressler
TimeAbs#Title and Authors
19:15 1405 Investigation of Fabrication Process for n+/p Junction for Germanium n-channel MOSFETs M. Koike, Y. Kamata, T. Ino, D. Hagishima, M. Koyama and A. Nishiyama (Toshiba Corporation)
19:18 1406 Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration S. Suder, H. Gamble, B. Armstrong, S. Bhattacharyya, R. Hurley (Queen's University of Belfast), P. T. Baine (Queens University of Belfast) and D. McNeill (Queen's University of Belfast)
19:21 1407 Interlayer-Assisted Stability of Germanosilicide for Heavily-Doped n+-Si0.83Ge0.17 Grown by Reduced Pressure Chemical Vapor Deposition K. Shim (Chonbuk National University), A. Choi, S. Choi, H. Yang (CNU), S. Kim and S. Lee (ETRI)
19:24 1408 Vacancy - Assisted Redistribution of Ge in SiGe/Si Multilayer Structures Irradiated with High Energy Ions I. V. Antonova (Institute of Semiconductor Physics), J. Back-Misiuk, P. Romanowski (Institute of Physics PAN, Warsaw, Poland) and V. Skuratov (Joint Institute for Nuclear Research, Dubna, Russia)
19:27 1409 Carbon Incorporation in SiGe Epi Films to Block Boron Diffusion F. Deleglise, D. Dutartre and A. Talbot (STMICROELECTRONICS)
19:30 1410 Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced Conductivity in Sub-50 NM Strained Layers of Silicon Germanium D. Enicks (ATMEL Corp.) and G. Oleszek (University of Colorado at Colorado Springs)
19:33 1411 How Trace Analytical Techniques Contribute to the Research and Development of Ge and III/V Semiconductor Devices D. Hellin (IMEC and KULeuven), J. Rip, R. Bonzom (IMEC), D. Nelis (IMEC and Hasselt Univ.), S. Sioncke, M. R. Caymax, M. M. Meuris (imec), S. De Gendt (IMEC and KULeuven) and C. Vinckier (KULeuven)
19:36 1412 Self-Assembling of Ge Islands on Blank, Patterned and Ion Implanted Si(001) A. Terrasi (University of Catania)
19:39 1413 Developmet of New Germanium Compounds for Use in SiGe E. Woelk, D. Shenai (Rohm & Haas Electronic Materials), R. DiCarlo, M. Power and A. Amamchyan (Rohm and Haas Electronic Materials)
19:42 1414 Tensile Strained Selective Silicon Carbon Alloys for Recessed Source Drain Areas of Devices M. Bauer (ASM America Inc.), D. Weeks, Y. Zhang (ASM America) and V. Machkauotsan (ASM Belgium)
19:45 1415 Investigation of Silicon-Germanium Films Deposited by Plasma-Enhanced Chemical Vapor Deposition Using Laser Assistance C. Lee (Microelectronics of National Cheng Kung University), J. Cheng, Y. Chen and T. Tsai (Microelectronics)
19:48 1416 Ge Selective Epitaxial Growth with Ultra Thin SiGe Buffer Layer J. Nakatsuru, H. Date (Canon ANELVA), S. Mashiro (Canon Anelva Corporation) and M. Ikemoto (Canon ANELVA)
19:51 1417 Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH4 using N2 as a Carrier Gas F. Leys, R. Bonzom, R. Loo (IMEC), A. Theuwis (Umicore), W. Vandervorst and M. R. Caymax (Imec)
19:54 1418 Influence of Temperature on Boron Concentration in SiGe-B Epitaxy Y. Zhou (Intel Corp.)
19:57 1419 Improvement of Dopant Concentration Control with Acoustic Control System for B-SiGe Epitaxy Deposition T. Woods (Intel Corporation)
20:00 1420 Very High Temperature Growth of SiGe Virtual Substrates (15% < [Ge] < 45%) J. Hartmann (CEA-LETI)
20:03 1421 Precise Analysis of Si/Graded-Si1-xGex/Si1-xGex Heterostructure Films Grown by Reduced Pressure Chemical Vapor Deposition Using Spectroscopic Ellipsometry K. Shim (Chonbuk National University), J. Seo, S. Choi, H. Yang, J. Kim, J. Yang (CNU), T. Han and D. Cho (Tachyonics)
20:06 1422 Unique Temperature Dependence on the Morphological Evolution of Ge on Si(100) A. C. Alguno (Tohoku University)
20:09 1423 Effective of Si Seed for Selective SiGe Epitaxial Deposition in Recessed Source and Drain for Locally Strained pMOS Application P. Cheng, C. Liao, H. Wu, Y. Chen, C. Chien, C. Yang, S. Tzou (United Microelectronics Corp.), J. Tang, Y. Cho, E. Sanchez, V. Chang and T. Fu (Applied Materials)
20:12 1424 On the Power Gain Characteristics of RF MOSFETs Z. Ma (Univ of Wisconsin), N. Jiang (University of Wisconsin-Madison) and H. Yuan (Univ. of Wisconsin-Madison)
20:15 1425 Study of Charged states of Si Quantum Dots with Ge Core K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki (Hiroshima University)
20:18 1426 Development of Textured High-Quality Si and SiGe Multicrystal Ingots with Same Grain Orientation and Large Grain Sizes by the New Dendritic Casting Method K. Nakajima, K. Fujiwara, M. Tokairin, W. Pan, Y. Nose and N. Usami (Tohoku University)
20:21 1427 Control of Carbon Incorporation in Selectively Grown Epitaxial SiGe:C Layers Dedicated to HBTs B. Vandelle, F. Brossard, B. Barbalat, P. Chevalier, F. Saguin and D. Dutartre (STMicroelectronics)
20:24 1428 Bias Dependence of SiGe HBT Linearity Under CE and CB Configurations G. Qin, G. Wang (University of Wisconsin-Madison) and Z. Ma (Univ of Wisconsin)
20:27 1429 Electrical Properties and Bonding Structures of Germanium Nitride/Ge(100) structures Formed by Radical Nitridation H. Kondo, I. Yanagi, M. Sakashita (Graduate School of Engineering, Nagoya university), A. Sakai, M. Ogawa and S. Zaima (Nagoya University)
20:30 1430 Modeling of Lossy MOS Capacitors on Ge-Rich Si0.15Ge0.85 Substrates M. K. Bera (Indian Institute of Technology, Kharagpur, India), R. Das, S. Chakraborty (Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721302, India), S. Saha (Department of Physics and Techno physics, Vidyasagar University, Midnapore, 721302, India.) and C. Maiti (Dept. of Electronics & ECE, Indian Institute of Technology, Kharagpur, India)
20:33 1431 Suppression of Structural Imperfection in Strained Si Thin Film by Utilizing SiGe Bulk Substrate N. Usami, Y. Nose, K. Fujiwara and K. Nakajima (Tohoku University)
20:36 1432 Thermal Oxidation of MBE SiGe Films: Ge Segregation and Defects Injection A. Terrasi (University of Catania)
20:39 1433 Silicon-Germanium Heterostructure-on-Insulator Formed by Ge+ Ion Implantation and Hydrogen Transfer V. P. Popov, I. E. Tyschenko, A. G. Cherkov (Institute of Semiconductor Physics) and M. -. Voelskow (Institut fur Ionenstrahlphysik and Materialforschung)
20:42 1434 Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Susbtrates J. Hartmann (CEA-LETI)
20:45 1435 Strained Silicon Two-Dimensional Electron Gases on x = 0.2 Si1-xGex Relaxed Graded Buffers K. Yao, J. Sturm (Princeton University) and A. Lochtefeld (AmberWave Systems Corp.)
20:48 1436 Comparison of SiGe Virtual Substrates for the Fabrication of Strained Silicon-on-Insulator (sSOI) Using Wafer Bonding and Layer Transfer M. Reiche (Max-Planck-Institut für Mikrostrukturphysik), I. Radu, C. Himcinschi, R. Singh, S. Christiansen and U. Goesele (Max Planck Institute of Microstructure Physics)
20:51 1437 Defect and Strain Characterization of Selective-Area-Growth Ge Mesa Structures on Si Substrate J. Lu, G. Rozgonyi (NC State University), J. Liu (MIT), L. Kimerling (Massachusetts Institute of Technology) and J. Michel (MIT)
20:54 1438 Local Strain Measurement with Convergent Beam Electron Diffraction and Finite Element Simulation W. Zhao (North Carolina State University), G. Duscher (North Carolina State University and Oak Ridge National Lab) and M. Zikry (North Carolina State University)
 

Tuesday, October 31, 2006

Galactic 1, Conference Center, Sunrise

SiGe HBT Technologies

Co-Chairs: G. Niu and K. Washio
TimeAbs#Title and Authors
08:00 1439 Pushing the Performance Limits of SiGe HBTs M. H. Khater (IBM T. J. Watson Research Center)
08:30 1440 Prospects for SiGeC HBT BiCMOS on thin-film SOI A. Chantre (STMicroelectronics)
09:00 1441 Self-Sligned SiGe HBT Based on Combined Dry and Wet Etching D. Liu (Tsinghua University), S. Xu (SWID) and Y. Hao (Xidian University)
09:20 1442 Manufacturing Control and Optimization of SiGe(C) HBT Epitaxial Growth N. Zhang, P. Tan, C. Sinn, A. Rodriquez, G. Prando, C. Nguyen, M. Fung, L. Safran, G. Lehman, S. Gausepohl, J. Mase and N. Bell (Philips Semiconductors Fishkill)
09:40 1443 2D-TCAD Process Calibration for a High Speed QSA SiGe:C HBT Verified with SSRM A. Sibaja-Hernandez, P. Eyben, S. Van Huylenbroeck, D. Vanhaeren, W. Vandervorst, S. Decoutere and H. Maes (IMEC)
 

Process-Induced Strain and Strain Modeling

Co-Chairs: S. Takagi and S. Bedell
TimeAbs#Title and Authors
10:15 1444 Wafer-Level Stress in Combination with Process Induced Stress for Optimum Performance Enhancement I. Cayrefourcq and A. Boussagol (SOITEC)
10:45 1445 Strain Degradation in Strained-Si Layers Far Thicker Than the Critical Thickness Grown on Relaxed Si0.65Ge035 Layers S. Kang (Siltron Inc.), H. Yuk, I. Kim, J. Lee, S. Lee, J. Shim (Siltron Inc. R&D Center) and B. Lee (LG Siltron)
11:05 1446 Strain Control of Stripe Patterned Si/Si1-xGex/Si Heterostructures J. Uhm (Tohoku University), M. Sakuraba (Res. Inst. Electr. Comm., Tohoku Univ.) and J. Murota (RIEC, Tohoku University)
11:25 1447 Strain Modeling in Advanced MOSFET Devices S. Cea, T. Ghani, M. Giles, R. Kotlyar, P. Matagne, K. Mistry, B. Obradovic, R. Shaheed, L. Shifren, M. Stettler, S. Tyagi, X. Wang and C. Weber (Intel Corporation)
11:55 1448 On the Influence of the Position-Dependence of Stress on Device Performance F. M. Bufler and R. Gautschi (Synopsys Schweiz)
12:15 1449 Analysis of Hole Transport in Arbitrarily Strained Germanium G. Karlowatz (TU Wien), E. Ungersboeck (Institute for Microelectronics), H. Kosina (Technische Universität Wien), W. Wessner (Institute for Microelectronics) and S. Selberherr (TU Wien)
 

Recessed SiGe Source/Drain for Locally Strained Si Channels

Co-Chairs: D. Sadana and M. Sakuraba
TimeAbs#Title and Authors
13:50 1450 Selective Epitaxy of Si/SiGe to improve pMOS devices by recessed Source/Drain and/or Buried SiGe Channels R. Loo, P. Verheyen, R. Rooyackers (IMEC), C. Walczyk (IMEC and Universitaet Siegen), F. Leys, D. Shamiryan, P. Absil, T. Delande, A. Moussa (IMEC), H. Weijtmans, R. Wise (Texas Instruments Inc.), V. Machkaoutsan (ASM-Belgium), C. Arena (ASM-America), J. McCormack, S. Passefort (KLA-Tencor Corporation), H. Sorada, A. Inoue (Matsushita Electric Industrial Co.), B. Lee, S. Hyun (Samsung Electronics Co.), S. Jakschik (Infineon Technologies AG) and M. R. Caymax (Imec)
14:20 1451 Application of Selective Si:C Epitaxy For Recessed Source/Drain Technology Y. Kim (Applied Materials), Z. Ye, A. Zojaji (Applied Materials, CA 94085), E. Sanchez (Applied Materials) and S. Kuppurao (Applied Materials, CA 94085)
14:40 1452 Facet Propagation in Si(Ge) Epitaxy or Etching D. Dutartre, A. Talbot (STMICROELECTRONICS) and N. Loubet (STMicroelectrinics)
15:10 1453 In-Situ HCl Etching and Selective Epitaxial Growth of B-doped Ge for the Formation of Recessed and Raised Sources and Drains J. Hartmann (CEA-LETI)
15:30 1454 Novel Process Development for Bilayer Embedded SiGe Source/Drain Formation Y. Miyanami, K. Ohta, T. Shinyama, Y. Owa, T. Katagiri, A. Horiuchi, Y. Hagimoto, K. Watanabe, T. Ikuta, S. Terauchi, K. Nagaoka, S. Fujita (Sony Corporation), H. Naruse, I. Mizushima (Toshiba Corporation), H. Iwamoto, N. Nagashima and S. Kadomura (Sony Corporation)
 

Ge-MIS Interfaces

Co-Chairs: S. Zaima and P. McIntyre
TimeAbs#Title and Authors
16:05 1455 Ge and III/V as Enabling Materials for Future CMOS Technologies M. M. Heyns, M. M. Meuris and M. R. Caymax (Imec)
16:35 1456 Interface Layers for High-k/Ge Gate Stacks: Are They Necessary? P. McIntyre, D. Chi, C. Chui (Stanford University), H. Kim (Sungkyunkwan University), K. Seo and K. Saraswat (Stanford University)
17:05 1457 Low Temperature Surface Nitridation Processes for Dielectric-Ge Interfaces H. J. Wadsworth (Queens University Belfast), S. Bhattacharya, F. Ruddell (Queens Univeristy Belfast), D. McNeill (Queen's University of Belfast), N. Mitchell (Queens Univeristy Belfast), M. Armstrong (Queens Univeristy) and H. Gamble (Queen's University of Belfast)
17:25 1458 Characterization and Modeling of Atomically Sharp "Perfect" Si:Ge/SiO2 Interfaces W. Windl (The Ohio State University), T. Liang (University of Florida), S. Lopatin (FEI Company) and G. Duscher (North Carolina State University and Oak Ridge National Lab)
17:45 1459 Effects of Interfacial Layers Formed by Plasma Oxidation and Nitridation on HfO2/Ge-MIS Properties T. Maeda (National Institute of Advanced Industrial Science and Technology (AIST)), Y. Morita, M. Nisizawa (MIRAI-AIST) and S. Takagi (The University of Tokyo)
 

Wednesday, November 1, 2006

Galactic 1, Conference Center, Sunrise

Ge and GaAs on Si

Co-Chairs: K. Saraswat and M. Meuris
TimeAbs#Title and Authors
08:00 1460 Epitaxial Growth of GaAs/Ge Interfaces E. Fitzgerald (Massachusettes Institute of Technology)
08:30 1461 Some Insights into the Relaxation Mechanisms of Germanium Growing on (001) Si by Ultrahigh Vacuum Chemical Vapor Deposition D. Bouchier (CNRS-Universite Paris Sud), V. Yam, M. Halbwax (Universite Paris Sud), L. Nguyen (VAST), D. Debarre (CNRS) and F. Fossard (Institut d 'Electronique Fondamentale)
09:00 1462 Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern G. Brammertz (IMEC vzw), M. R. Caymax (Imec), Y. Mols, S. Degroote, M. Leys, J. Van Steenbergen and G. Winderickx (IMEC vzw)
09:20 1463 Kinetics of Selective Epitaxial Growth of Si and Relaxed Ge by Ultrahigh Vacuum Chemical Vapor Deposition in Si(001) Windows F. Fossard (Institut d 'Electronique Fondamentale), M. Halbwax, V. Yam (Universite Paris Sud), H. Nguyen, V. Mathet, D. Cammilleri, D. Débarre, J. Boulmer (Institut d 'Electronique Fondamentale) and D. Bouchier (CNRS-Universite Paris Sud)
09:40 1464 In Situ Phosphorus Doping of Germanium by APCVD G. Dilliway (IMEC), R. Van Den Boom (IMEC, Kapeldreef 75, B3001 Leuven, Belgium and Fontys University of Applied Sciences, Rachelsmolen 1, NL-5600 AH Eindhoven, The Netherlands), R. Bonzom, F. Leys (IMEC), B. Van Daele (IMEC Kapeldreef 75 B3001 Leuven Belgium), B. Parmentier (MEC, Kapeldreef 75, B3001 Leuven, Belgium), T. Clarysse (IMEC Kapeldreef 75 B3001 Leuven Belgium), E. R. Simoen, R. Loo, M. M. Meuris, W. Vandervorst and M. R. Caymax (Imec)
 

SiGe & Ge Processing I

Co-Chairs: H. Rucker and C. - W. Liu
TimeAbs#Title and Authors
10:15 1465 Low Temperature Crystallization of a-SiGe on Insulating Films for Thin Film Transistor Application M. Miyao, H. Kanno, I. Tsunoda and T. Sadoh (Kyushu University)
10:45 1466 Isotropic Etching of Si1-xGex Buried Layers Selectively to Si for the Realization of Advanced Devices S. Borel (CEA - Léti), V. Caubet, A. Cherif, C. Arvet (STMicroelectronics), C. Vizioz (CEA - Léti), J. Hartmann (CEA-LETI) and G. Rabille (STMicroelectronics)
11:15 1467 Nickel Selective Etching Studies for Self-Aligned Silicide Process in Ge-Based Devices V. Carron, G. Rolland and S. Minoret (CEA-LETI)
11:35 1468 Diode Analysis of Electrically Active Defects in Recessed SiGe Source/Drain Diodes E. R. Simoen, M. Bargallo, G. Eneman, P. Verheyen, C. L. Claeys, A. Benedetti, H. Bender (IMEC), K. De Meyer (IMEC and KULeuven), R. Schreutelkamp, L. Washington and F. Nouri (Applied Materials Inc)
11:55 1469 A Study of Boron Implantation into High Ge Content SiGe Alloys R. Wittmann (TU Wien), S. Uppal (University of Newcastle upon Tyne), A. Hoessinger, J. Cervenka and S. Selberherr (TU Wien)
 

Ge FETs and e-SiGe Devices

Co-Chairs: T. Ernst
TimeAbs#Title and Authors
13:15 1470 Selectively Formed High Mobility Strained Ge PMOSFETs for High Performance CMOS H. Shang (IBM)
13:45 1471 Very High Performance, Ultrathin, Strained-Ge Channel, Heterostructure FETs with High Mobility and Low BTBT Leakage T. Krishnamohan, D. Kim, Y. Nishi and K. Saraswat (Stanford University)
14:05 1472 The Combination of Embedded SiGe S/D and Metal Gate Options for High Performance pMOS Transistors P. Verheyen, S. Severi, G. Eneman, R. Loo, D. Shamiryan, R. Rooyackers, M. Demand, A. Veloso, A. Lauwers (IMEC), K. De Meyer (IMEC and KULeuven), P. Absil, M. Jurczak and S. Biesemans (IMEC)
14:35 1473 Sidewall Dislocations in SiGe Layers Embedded in Source/Drain Areas of MOSFETs and Their Impact on the Device Performance T. Kammler, I. Peidous (AMD) and A. Wei (AMD Saxony)
14:55 1474 Effectiveness of Embedded-SiGe in Super-Critically-Thick Strained-SOI A. Wei (AMD Saxony), T. Kammler (AMD) and I. Cayrefourcq (SOITEC)
 

SiGe & Ge Optoelectronics

Co-Chairs: K. Wada and L. Colace
TimeAbs#Title and Authors
15:30 1475 III-V/Si Device Integration Via Metamorphic SiGe Substrates J. A. Carlin (The Ohio State University), C. Andre (Akso Nobel Polymer Chemicals LLC), O. Kwon (Lumileds), E. Fitzgerald (Massachusettes Institute of Technology), J. Boeckl (AFRL/MLPS) and S. Ringel (The Ohio State University)
16:00 1476 Stimulated THz Emission of Strained p-Ge and SiGe/Si Quantum-Well Structures Doped with Shallow Acceptors. M. S. Kagan (Institute of Radio Engineering and Electronics of RAS), I. Altukhov, V. Sinis, E. Chirkova, S. Paprotskiy (Institute of Radio Engineering and Electronics of RAS, Moscow, Russia), I. Yassievich, M. Odnoblyudov, A. Prokofiev (A.F. Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russia) and J. Kolodzey (University of Delaware, Newark, DE, USA)
16:30 1477 Silicon-Germanium Saturable Absorber Mirrors for Ultra-Short Pulse Generation F. X. Kaertner, H. Byun, F. Grawert, J. Gopinath, H. Shen, E. Ippen, S. Akiyama, J. Liu, K. Wada (MIT) and L. Kimerling (Massachusetts Institute of Technology)
17:00 1478 Germanium Photodetectors for Photonics on CMOS J. Fedeli, J. Damlencourt, L. El Melhaoui, Y. Le Cunff, V. Mazzochi (CEA-LETI), L. Vivien, D. Marris Morini (IEF, Université Paris Sud), M. Rouvière (ST Microelectronics), D. Pascal, X. Le Roux, E. Cassan and S. Laval (IEF, Université Paris Sud)
17:20 1479 Polycrystalline Germanium on Silicon for Near Infrared Detectors L. Colace, G. Masini and G. Assanto (University of Roma Tre)
 

Workshop on Germanium for CMOS

Co-Chairs: M. Caymax
TimeAbs#Title and Authors
19:20 1480 Key Issues for the Development of a Ge CMOS Device in an Advanced IC Circuit M. M. Meuris (imec)
19:40 1481 Review of Some Critical Aspects of Ge and GeOI Substrates L. Clavelier (CEA - LETI), C. Le Royer (CEA-LETI) and Y. Morand (STMicroelectronics)
20:00 1482 Substrate Engineering for Germanium-Based CMOS Technology S. W. Bedell (IBM Research), K. Fogel, A. Reznicek, J. Ott and D. Sadana (IBM)
20:20 1483 Germanium MOSFETs for Nanoelectronics K. Saraswat (Stanford University)
20:40 1484 Prospects and Critical Issues on Ge MOS Technologies S. Takagi (The University of Tokyo), N. Taoka (MIRAI-AIST), S. Nakaharai, K. Ikeda, T. Tezuka, Y. Yamashita, Y. Moriyama (MIRAI-ASET), T. Maeda (National Institute of Advanced Industrial Science and Technology (AIST)) and N. Sugiyama (MIRAI-ASET)
 

Thursday, November 2, 2006

Galactic 1, Conference Center, Sunrise

Advanced SiGe Deposition Processes

Co-Chairs: R. Loo and J.- M. Hartmann
TimeAbs#Title and Authors
08:00 1485 Advanced Applications of Si and SiGe Epitaxy for Cutting Edge Integrated Circuit Technolgy D. Sadana (IBM)
08:30 1486 Development of High-Throughput Batch-Type Epitaxial Reactor Y. Kunii (Hitachi Kokusai Elctric), Y. Inokuchi (Hitachi Kokusai Electric), J. Wang (Hitachi Kokusai.Electric), K. Yamamoto, A. Moriya, Y. Hashiba, H. Kurokawa (Hitachi Kokusai Elctric) and J. Murota (RIEC, Tohoku University)
09:00 1487 The Deposition of Polycrystalline SiGe with Different Ge Precursors X. Shi, M. Schaekers, F. Leys, R. Loo, M. R. Caymax, S. Brus, C. Zhao (IMEC), B. Lamare, E. Woelk and D. Shenai (Rohm & Haas Electronic Materials)
09:20 1488 A Study on B Atomic Layer Formation for B-Doped Si1-xGex(100) Epitaxial Growth Using Ultraclean LPCVD System K. Ishibashi, M. Sakuraba (Res. Inst. Electr. Comm., Tohoku Univ.), J. Murota (RIEC, Tohoku University), Y. Inokuchi (Hitachi Kokusai Electric), Y. Kunii and H. Kurokawa (Hitachi Kokusai Elctric)
09:40 1489 The Utility of Novel Single-Source Germyl Silanes M. D. Stephens, M. Pikulin and C. Ritter (Voltaix, Inc.)
 

SiGe HBT Applications

Co-Chairs: A. Chantre and M. Ostling
TimeAbs#Title and Authors
10:15 1490 Integration of Photonic Detectors in Standard SiGe HBT BiCMOS G. Meinhardt (austriamicrosystems AG) and H. Zimmermann (EMST , Vienna University of Technology)
10:45 1491 Issues and Opportunities for Complementary SiGe HBT Technology J. D. Cressler (Georgia Tech)
11:15 1492 Bandgap Engineering in SiGe:C HBTs For Power Amplifier Applications S. Jouan, A. Talbot, S. Haendler, P. Mans, A. Perrotin and A. Monroy (STMICROELECTRONICS)
11:35 1493 Large-Signal Modeling of Proton Radiated SiGe Power HBTs Z. Ma (Univ of Wisconsin), N. Jiang (University of Wisconsin-Madison), P. Ma and M. Racanelli (Jazz Semiconductor, Inc)
11:55 1494 Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K Z. Feng, G. Niu (Auburn University), C. Zhu (Georgia Institute of Technology) and J. D. Cressler (Georgia Tech)
12:15 1495 A 20 GSample/s, 40 mW SiGe HBT Comparator for Ultra-High-Speed ADC Y. Borokhovych and H. Gustat (IHP)
 

Si/SiGe Hetero-Layer FETs and Device Physics

Co-Chairs: K. Uchida
TimeAbs#Title and Authors
13:50 1496 Nanoscaled MOSFET Transistors on Dtrained Si, SiGe, Ge Layers. Some Integration and Electrical Properties Features T. P. Ernst, T. P. Ernst and F. Andrieu (CEA-LETI)
14:20 1497 Influence of Strained Si1-yGey Layer Thickness and Composition on Hole Mobility Enhancement in Heterostructure p-MOSFETs with Ge Contents y from 0.7 to 1.0 C. Ni Chleirigh, O. Olubuyide and J. L. Hoyt (MIT)
14:40 1498 Buried-Channel Field Effect Transistors of Triple SiGe Quantum Wells on SOI K. Fujinaga (Hokkaido Institute of Technology)
15:00 1499 Modeling of Si/SiGe Multifinger RF Power MODFET H. Yuan (Univ. of Wisconsin-Madison), N. Jiang (University of Wisconsin-Madison), E. Croke (HRL Laboratories) and Z. Ma (Univ of Wisconsin)
15:20 1500 Parasitic Electrostatic Capacitances in Si/SiGe n-HFET M. Enciso-Aguilar (Instituto Politécnico Nacional), N. Zerounian (IEF - Université Paris Sud 11), T. Hackbarth, H. Herzog (daimlerchrysler) and F. Aniel (IEF)
15:40 1501 Analysis of Gate Leakage in Strained Si MOSFETs L. Yan, S. H. Olsen, M. Kanoun, M. Al-Araimi, R. Agaiby, G. Dalapati and A. O'Neill (University of Newcastle)
 

Substrate Technology

Co-Chairs: D. Houghton and I. Cayrefourcq
TimeAbs#Title and Authors
16:15 1502 Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates N. Sugiyama, T. Tezuka, T. Irisawa, K. Usuda, Y. Moriyama, S. Nakaharai, N. Hirashita (MIRAI-ASET) and S. Takagi (The University of Tokyo)
16:45 1503 The Challenges of Ge-Condensation Technique V. Terzieva, M. R. Caymax, L. Souriau and M. M. Meuris (imec)
17:05 1504 Oxidation Saturation of SiGe Alloy on Silicon-on-Insulator Wafers T. Shimura (Osaka University), M. Shimizu, S. Horiuchi, H. Watanabe (Dept. of Precision Science and Technology, Osaka University) and K. Yasutake (Graduate School of Engineering, Osaka University)
17:25 1505 Nucleation and Movement of Dislocations during Relaxation of He implanted SixGe1-x/Si Heterostructures M. Luysberg and N. Hueging (Research Centre Juelich)
17:55 1506 From Thin Relaxed SiGe Buffer Layers to sSOI: Structural and Electrical Characterisation S. Mantl, D. Buca, B. Holländer, H. Vissel, S. Feste, N. Wilk, H. Trinkaus (Forschungszentrum Juelich), M. Luysberg (Research Centre Juelich), R. Carius (Forschungszentrum Juelich), R. Loo, M. R. Caymax (Imec), H. Schäfer (Infineon Munich, Germany), I. Radu (Max Planck Institute of Microstructure Physics), M. Reiche (Max-Planck-Institut für Mikrostrukturphysik), S. Christiansen and U. Goesele (Max Planck Institute of Microstructure Physics)
18:15 1507 Dislocation Pile-Up Characterization And Quantification Using Automated Room Temperature Photoluminescence Mapping A. Buczkowski, N. Laurent, A. Shachaf, T. Walker, S. Hummel (Accent Optical Technologies), C. Berne and M. Kennard (Soitec)
 

Friday, November 3, 2006

Galactic 1, Conference Center, Sunrise

SiGe and Ge Processing II

Co-Chairs: B. Tillack and M. Miyao
TimeAbs#Title and Authors
08:00 1508 Dopant Diffusion in SiGeC Alloys H. Rucker, B. Heinemann, R. Kurps and Y. Yamamoto (IHP)
08:30 1509 Thin Germanium-Carbon Layers on Silicon for MOS Applications S. K. Banerjee, D. Q. Kelly, I. Wiedmann, D. Garcia-Gutierrez and M. Jose-Yacaman (University of Texas at Austin)
09:00 1510 Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped SiGeC D. Enicks (ATMEL Corp.) and G. Oleszek (University of Colorado at Colorado Springs)
09:20 1511 Ge Diffusion in Strained Si / Relaxed SiGe Heterostrucutures Y. Bogumilowicz, J. Barnes, P. Holliger, D. Rouchon (CEA-LETI), N. Daval (SOITEC), J. Hartmann (CEA-LETI), A. Abbadie, F. Lallemand, E. Guiot, T. Akatsu (SOITEC), C. Deguet and N. Kernevez (CEA-LETI)
09:40 1512 Characterization of Ge Implanted with Ni and Hf Ions S. Sioncke, E. R. Simoen, T. Janssens, M. M. Meuris, P. W. Mertens (Imec), S. Forment, P. Clauws (Ghent University) and A. Theuwis (Umicore)
 

Emerging Materials, Devices and Applications

Co-Chairs: A. Reznicek and M. Reiche
TimeAbs#Title and Authors
10:15 1513 Integration of SiGe to MEMS applications M. Reiche (Max-Planck-Institut für Mikrostrukturphysik)
10:45 1514 Study of Poly-SiGe Structural Properties for Modularly Integrated MEMS C. W. Low, T. King Liu (University of California at Berkeley) and R. T. Howe (Stanford University)
11:05 1515 Silicon-Carbon Source/Drain: Selective Epitaxy, Process Integration, and Transistor Strain Engineering Y. Yeo (National University of Singapore)
11:35 1516 Power Output Improvement of SiGe Thermoelectric Generators M. Wagner (TU Vienna), G. Span (Span and Mayrhofer KEG), S. Holzer, O. Triebl and T. Grasser (Institute for Microelectronics, TU Vienna)
11:55 1517 SiGe and Ge Cryogenic Power Transistors R. R. Ward, W. Dawson, L. Zhu, R. Kirschman (GPD Optoelectronics Corp.), G. Niu, M. Nelms (Auburn University), O. Mueller (LTE- Low Temperature Electronics), M. Hennessy, E. Mueller (MTECH Laboratories LLC), R. Patterson, J. Dickman (NASA Glenn Research Center) and A. Hammoud (QSS Group Inc.)
12:15 1518 Halide Passivation of Germanium Nanowires H. Jagannathan, J. Kim, M. Deal, M. Kelly and Y. Nishi (Stanford University)
 

Surface Treatment and MIS Characterization

Co-Chairs: M. Heyns and S. Miyazaki
TimeAbs#Title and Authors
13:50 1519 Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth Y. Moriyama, N. Hirashita (MIRAI-ASET), E. Toyoda (Toshiba Ceramics), K. Usuda, S. Nakaharai, N. Sugiyama (MIRAI-ASET) and S. Takagi (The University of Tokyo)
14:10 1520 Germanium Surface Cleaning with Hydrochloric Acid J. Kim, J. McVittie, K. Saraswat and Y. Nishi (Stanford University)
14:30 1521 Scanning Tunneling Microscopy Study on the Reaction of Oxygen with Clean Ge(001) Surfaces A. Sakai, Y. Wakazono, O. Nakatsuka, S. Zaima and M. Ogawa (Nagoya University)
14:50 1522 Atomic-Order Thermal Nitridation of Si1-xGex(100) at Low Temperatures by NH3 N. Akiyama, M. Sakuraba (Res. Inst. Electr. Comm., Tohoku Univ.) and J. Murota (RIEC, Tohoku University)
15:10 1523 Characterization of Strained Si/SiGe With Pulsed MOS Capacitor and Gate Oxide Integrity Measurements J. Liao and D. Schroder (Arizona State University)
15:30 1524 Comparison of Electrical and Structural Properties of HfO2 Thin Films on Strained and Relaxed Si1-xGex T. Park, J. Kim, J. Jang and C. Hwang (Seoul National University)
15:50 1525 Dielectric Relaxation and Defect Generation Under Pulsed and Constant Voltage Stressing of Ultrathin TiO2 Films on Strained-Si/Si0.8Ge0.2 M. K. Bera (Indian Institute of Technology, Kharagpur, India), S. Saha (Department of Physics and Techno physics, Vidyasagar University, Midnapore, 721302, India.) and C. Maiti (Dept. of Electronics & ECE, Indian Institute of Technology, Kharagpur, India)