210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E14 - State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45)

Electronics and Photonics
 

Monday, October 30, 2006

Universal 17, 1st Floor, Expo Center

SOTAPOCS Section 1

Co-Chairs: A. Baca and J. LaRoche
TimeAbs#Title and Authors
10:05 1526 Efficient and Photostable ZnS-Passivated CdS:Mn Quantum Dots D. Bera (University of Florida), H. Yang (Hongik University) and P. Holloway (University of Florida)
10:35 1527 Defects Limiting Carrier Lifetime in 4H-SiC Epilayers P. B. Klein, B. Shanabrook (Naval Research Laboratory), S. Huh, A. Polyakov (Carnegie Mellon University), M. Skowronski (Carnegie-Mellon University), J. Sumakeris and M. O'Loughlin (CREE Research)
11:05 1528 SiC Via Fabrication and Integration fro Wide Bandgap HEMT/MMIC Devices R. Shul, M. Overberg, A. G. Baca, C. Sanchez, J. Stevens (Sandia National Laboratories), L. Voss (Materials Science and Engineering, University of Florida), K. Ip (University of Florida), S. J. Pearton (Materials Science and Engineering, University of Florida), M. Martinez, M. Armendariz and G. Wouters (Sandia National Laboratories)
11:35 1529 Growth of Self-Assembled Quantum Dots, Quantum Rings, and Lateral Bi-Quantum-Dot Molecules by Gas-Source Molecular Beam Epitaxy C. W. Tu, S. Suraprapapich, Y. Shen, Y. Fainman (University of California San Diego) and S. Panyakeow (Chulalongkorn University)
 

SOTAPOCS Section II

Co-Chairs: J. Wang and P. Chang
TimeAbs#Title and Authors
14:00 1530 Fabrication and Optimization of Al Doped Ta2O5 Thin Films to Enable Temperature Stable Phase Shifters M. W. Cole, W. Nothwang, S. Hirsch, C. Hubbard and E. Ngo (US Army Research Laboratory)
14:30 1531 Ohmic Contacts to Antimonide Compound Semiconductors and Indium Arsenide S. E. Mohney, E. Lysczek (Penn State University), J. Robinson (NRL) and S. Wang (Intel)
15:00 1532 Dense Intra-Cavity Interconnection Technology for Hermetically Packaged MMICs P. Chang-Chien, P. Chang-Chien (Northrop Grumman) and K. Tornquist (Northrop Grumman Space Technology)
15:20 1533 Visible Light Active Carbon Modified (CM)-n-TiO2 Nanotube Arrays for Efficient Photoelectrochemical Splitting of Water S. U. Khan, C. Xu and Y. A. Shaban (Duquesne University)
15:40 Intermission (20 Minutes)
16:00 1534 Current Status of Field Aided Lateral Crystallization D. Choi, H. Kim, T. Han (Hanyang University) and Y. Kim (North Carolina State University)
16:30 1535 Carbon Modified (CM)- n-Fe2O3 Thin Films for Efficient Photoelectrochemical Splitting of Water S. U. Khan and Y. A. Shaban (Duquesne University)
16:50 1536 Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE) V. Venkatasamy (University of Georgia)
 

Tuesday, October 31, 2006

Universal 17, 1st Floor, Expo Center

SOPAPOCS Section III

Co-Chairs: F. Ren and J. Lin
TimeAbs#Title and Authors
08:00 1537 Growth of GaN on Si Substrates T. anderson, H. Park, S. Kang, J. Mangum (University of Florida), M. Mastro (Naval Research Lab) and O. Kryliouk (University of Florida)
08:30 1538 Growth and Surface Reconstructions of GaN and AlN C. Lee (Raytheon RF Components)
09:00 1539 Approaches to Reduced-Defect Active Regions for III-N Devices C. R. Eddy (U.S. Naval Research Laboratory), M. Mastro (Naval Research Lab), N. Bassim (U.S. Naval Research Laboratory), M. Twigg (Naval Research Lab), R. Henry (U.S. Naval Research Laboratory), R. Holm (Naval Research Lab), J. Culbertson, O. Glembocki (U.S. Naval Research Laboratory), J. D. Caldwell (Naval Research Lab), P. Neudeck (NASA Glenn Research Center), A. Trunek (OAI), J. Powell (Sest Inc.), M. Peckerar, Y. Ngu (University of Maryland), F. Yan and S. Babu (NASA Goddard Space Flight Center)
09:30 1540 Functional One-Dimensional III-N Nanostructures: from Super-Photoconductors to DNA Sensors L. Chen (National Taiwan University) and K. Chen (Academia Sinica)
10:00 Intermission (20 Minutes)
10:20 1541 III-V Nanowires Grown by Metal-Organic Chemical Vapor Deposition for Optoelectronics Applications H. Tan, Y. Kim, H. Joyce, Q. Gao, C. Jagadish (The Australian National University), M. Paladugu and J. Zou (The University of Queensland)
10:50 1542 Microwave Wireless Power Transmission - A System Perspective J. Lin, A. Verma, J. Kim, S. Ko, W. Wu, F. Ren, S. Jang (University of Florida) and S. J. Pearton (Materials Science and Engineering, University of Florida)
11:20 1543 Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates B. Gila, M. Hlad, T. Anderson, J. Chen, K. Allums, A. Gerger, A. Herrero, S. Jang, B. Kang, C. R. Abernathy, F. Ren (University of Florida) and S. J. Pearton (Materials Science and Engineering, University of Florida)
 

SOTAPOCS Section IV

Co-Chairs: W. Johnson and J. LaRoche
TimeAbs#Title and Authors
14:00 1544 The Influence of Device Processing on GaN HEMT Reliability D. Katzer, J. Mittereder, S. Binari, D. Storm and J. Roussos (US Naval Research Laboratory)
14:30 1545 Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates J. D. Brown, S. Gibb, J. McKenna, M. Poulton, S. Lee, K. Gratzer, B. Hosse, T. Mercier, Y. Yang, M. Young, D. Green, R. Vetury and J. Shealy (RFMD)
15:00 1546 Mechanisms of Enhanced Luminescence In Nanoscale Compositionally Inhomogeneous AlGaN P. H. Shen, A. Sampath, G. Garrett and M. Wraback (US Army Research Lab)
15:30 Intermission (20 Minutes)
15:50 1547 GaN High Efficiency Ultra-Violet LEDs Using Step-Free 4H-SiC Mesas J. D. Caldwell, M. Mastro (Naval Research Lab), K. D. Hobart (The Naval Research Laboratory), O. Glembocki, C. R. Eddy, N. Bassim (U.S. Naval Research Laboratory), M. Tadjer, R. Holm (Naval Research Lab), R. Henry (U.S. Naval Research Laboratory), M. Twigg (Naval Research Lab), P. Neudeck (NASA Glenn Research Center), A. Trunek (OAI) and J. Powell (Sest Inc.)
16:20 1548 Improvement in the Extraction Efficiency of AlGaInP and GaN Thin Film LEDs Via n-Side Surface Roughing H. Kuo (National Chiao-Tung University), T. Lu, Y. Lee, H. Huang and S. Wang (Department of Photonics, NCTU)
16:50 1549 Hot Carrier Stress Effects of SiO2 Passivated AlGaN/GaN High Electron Mobility Transistors M. Ha, J. Park (Seoul National University) and M. Han (Seoul National Univ.)
 

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o 1550 Growth of High Quality ZnSe Epilayer on Si (100) T. Yang, J. Ku (National Chiao Tung University), T. Yang (Academia Sinica), G. Luo (National Nano Device Laboratories), W. Chou and C. Chang (National Chiao Tung University)
o 1551 Intrinsic Paramagnetic Defects in GaNP Alloys Grown on Silicon W. M. Chen, I. Vorona, I. Buaynova (Linkoping University), A. Utsumi, Y. Furukawa, S. Moon (Toyohashi University of Technology), A. Wakahara (Toyohashi Univ. of Tech.) and H. Yonezu (Toyohashi University of Technology)
o 1552 Identification And Quantification Of Impurities Critical To The Performance Of Nitride Semiconductor Devices R. Torres (Matheson Trigas), J. Chyi, G. Chen (National Central University, Taiwan, R.O.C.), C. Wyse (Matheson Tri-Gas) and J. Vininski (Matheson-Trigas, Inc.)
o 1553 Radio Frequency Sputter Deposition of Indium-Doped Iron Oxide Films for Photoelectrochemical Hydrogen Production W. B. Ingler Jr, D. Sporar and X. Deng (University of Toledo)
o 1554 Electrochemical and Optical Properties of Radio Frequency Sputter-Deposited Cobalt Oxide Films W. B. Ingler Jr, D. Attygalle and X. Deng (University of Toledo)