210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E15 - Thin Film Transistors 8 (TFT8)

Electronics and Photonics
 

Monday, October 30, 2006

Universal 19, 1st Floor, Expo Center

TFT Systems

Co-Chairs: Y. Kuo and M. Shur
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05 1555 Panel-Sized LCD Drivers Using SOG Technology H. Hayama (NEC Electronics Corporation)
10:35 1556 Technology Trend of AMLCDs for Mobile Application Y. Yamamoto (Sharp Corperation)
11:05 1557 Optical Feedback for AMOLED Pixel Circuits S. Deane, D. Fish, N. Young, A. Steer, D. George, A. Giraldo, H. Lifka and W. Oepts (Philips Research)
11:35 1558 High Reliability and Performance Poly-Si TFTs for System in Displays M. Hatano (Hitachi, Ltd., Central Research Laboratory,), M. Matsumura, Y. Toyota, M. Tai, H. Hamamura (Hitachi, Ltd., Central Research Laboratory), T. Miyazawa and M. Ohkura (Hitachi Displays, Ltd.)
 

Devices and Reliability

Co-Chairs: O. Bonnaud and M. Hatano
TimeAbs#Title and Authors
14:00 1559 Design of Ultra-High Performance Si TFTs G. Kawachi (ALTEDEC)
14:30 1560 Front and Back Channel Properties of Asymmetrical Double-Gate Polysilicon TFTs F. V. Farmakis, D. N. Kouvatsos (NCSR Demokritos), A. T. Voutsas (Sharp Laboratories of America Camas, WA), D. C. Moschou, G. P. Kontogiannopoulos (NCSR Demokritos) and G. J. Papaioannou (University of Athens)
14:50 1561 Instability of Threshold Voltage of Single-Crystalline Si Thin-Film Transistors on Flexible Substrate H. Yuan (Univ. of Wisconsin-Madison), M. G. Lagally (University of Wisconsin-Madison) and Z. Ma (Univ of Wisconsin)
15:10 1562 Stable Bottom-Gate Nanocrystalline/Amorphous Silicon TFTs for OLED Displays M. Esmaeili Rad, A. Sazonov, D. Striakhilev and A. Nathan (University of Waterloo)
15:30 1563 Universal TFT Compact Model B. Iniguez (Universitat Rovira i Virgili), M. Shur, V. Turin, D. Veksler (Rensselaer Polytechnic Institute, Troy, NY, US), T. Ytterdal (Norwegian University of Science and Technology, Trondheim, Norway) and W. Jackson (Hewlett-Packard Laboratories, Palo Alto, California, US)
15:50 Intermission (20 Minutes)
 

Deposition Processes

Co-Chairs: M. K. Han
TimeAbs#Title and Authors
16:10 1564 Development of ALD/PECVD Reactor for High Quality LTPS-TFTs Insulator K. Murata, N. Miyatake, Y. Mori, H. Tachibana (Mitsui Engineering & Shipbuilding Co., Ltd.), Y. Uraoka and T. Fuyuki (Nara Institute of Science and Technology)
16:40 1565 Room-Temperature Sputter-Deposited Gate SiO2 Films for High Quality Poly-Si TFTs T. Serikawa (Osaka University), T. Miyashita (NAIST), H. Ueno, Y. Sugawara, Y. Uraoka and T. Fuyuki (Nara Institute of Science and Technology)
 

Tuesday, October 31, 2006

Universal 19, 1st Floor, Expo Center

Poly-Si TFTs from Laser Crystallization Processes

Co-Chairs: Y. Uraoka and S. Deane
TimeAbs#Title and Authors
08:00 1566 Nanosecond Monitoring of Lateral Crystallization Dynamics Induced by ELA Y. Takami (Advanced LCD Technologies Development Center Co., Ltd.), T. Warabisako and M. Matsumura (Advanced LCD Tec. Development Center Co., Ltd.)
08:30 1567 Analysis of the Hump Characteristics in Poly-Si Thin Film Transistor S. Kim, J. Oh, J. Yang, M. Yang and I. Chung (LG.Philips LCD R&D center)
08:50 1568 Preferred <100> Surface and In-Plane Orientations in Self-Assembled Poly-Si by Multiple Excimer Laser Irradiation M. He (Delft University of Technology), R. Ishihara, W. Metselaar and K. Beenakker (Delft University of Technology, Delft Institute of Microelectronics and Submicron Technology (DIMES), Laboratory of Electronic Components, Technology and Materials (ECTM))
09:10 1569 Crystallization of Double-Layered Silicon Thin Films by Solid Green Laser Annealing and Its Application to Low Temperature poly-Si Thin Film Transistors Y. Sugawara, Y. Uraoka, H. Yano, T. Hatayama, T. Fuyuki (Nara Institute of Science and Technology) and A. Mimura (National Institute of Advanced Industrial Science and Technology)
09:30 Intermission (20 Minutes)
09:50 1570 A Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines I. Brunets, J. Holleman (University of Twente), A. Y. Kovalgin (MESA+ Institute for Nanotechnology, University of Twente), T. Aarnink, A. Boogaard (University of Twente), P. Oesterlin (Innovavent GmbH) and J. Schmitz (MESA+ Institute for Nanotechnology, University of Twente)
10:10 1571 The Role of Grain Boundaries on the Performance of Poly-Si TFTs G. J. Papaioannou, G. J. Papaioannou (University of Athens) and D. N. Kouvatsos (NCSR Demokritos)
10:30 1572 Poly-Si TFT Technology: Advances in Material, Process and Device Technology A. T. Voutsas (Sharp Laboratories of America Camas, WA)
 

Poly-Si TFTs from Non-Laser Crystallization Processes

Co-Chairs: J. Daniel and T. Serikawa
TimeAbs#Title and Authors
11:00 1573 Low-Temperature Crystallization of Amorphous Si Films Using Ferritin Protein with Ni Nanoparticles Y. Uraoka (Nara Institute of Science and Technology)
11:30 1574 A Simple Method for Gettering of Nickel within the NILC Polycrystalline Silicon Film Using alpha-Si / SiNx films Y. S. Wu, C. Hou, C. Lin and C. Hu (National Chiao Tung University)
 
Co-Chairs: H. Hayama and J. Rogers
TimeAbs#Title and Authors
14:00 1575 Molecular-Dynamics Simulations of Recrystallization Processes in Silicon: Nucleation and Crystal Growth in the Solid-Phase and Melt T. Motooka (Kyushu University)
14:30 1576 Ge Nuclei for Fabrication of Poly-Si Thin Films on Glass Substrates K. Yasutake (Graduate School of Engineering, Osaka University), H. Watanabe (Dept. of Precision Science and Technology, Osaka University), H. Ohmi and H. Kakiuchi (Graduate School of Engineering, Osaka University)
14:50 1577 Analysis of Characteristics in Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process H. Kwang Sik (LG Philips LCD R&D Center), J. Yang, M. Yang (LG.Philips LCD R&D center), Y. Kim (LG Philips LCD R&D Center), T. Ahn (LG.Philips LCD) and I. Chung (LG.Philips LCD R&D center)
 

TFTs on Flexible Substrates

Co-Chairs: A. Voutsas and T. Motooka
TimeAbs#Title and Authors
15:30 1578 Single Crystal Inorganic Semiconductors for Flexible Thin Film Electronics J. Rogers (University of Illinois)
16:00 1579 The Road Towards Large-Area Electronics Without Vacuum Tools J. Daniel, A. Arias, B. Krusor, R. Lujan and R. Street (Palo Alto Research Center)
16:30 1580 Mist Deposition in TFT Technology K. Shanmugasundaram, S. Price, K. Chang, D. Lee and J. Ruzyllo (The Pennsylvania State University)
16:50 1581 Overlay Alignment in a-Si:H TFTs Fabricated on Foil Substrates H. Gleskova, I. Cheng, S. Wagner (Princeton University) and Z. Suo (Harvard University)
17:10 1582 230 dpi AMPLED TFT VGA Display on Flexible Metal Foils and Row Drivers M. Troccoli, T. Chuang, A. Hamshidi (Lehigh University), P. Kuo (Display Research Laboratory, Department of Electrical and Computer Engineering, Lehigh University), J. Spirko (Department of Chemistry, Lehigh University), M. Hatalis (Display Research Laboratory, Department of Electrical and Computer Engineering, Lehigh University), A. T. Voutsas, T. Afentakis (Sharp Laboratories of America Camas, WA) and J. Hartzell (Sharp Labs of America)
 

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs: Y. Kuo and S. Uchikoga
TimeAbs#Title and Authors
o 1583 Electrical Hysteresis Behavior of Low Temperature Polycrystalline Silicon Thin Film Transistors D. Nam, H. Lee, S. Jung, T. Ahn, C. Kim, C. Kim (LG.Philips LCD) and I. Chung (LG.Philips LCD R&D center)
o 1584 Excimer Laser Crystallization of Amorphous Silicon Film with Artificially Designed Spatial Intensity Profile Beam E. Kim, K. Kim (Seoul National University), M. Ryu, H. Kwon, C. Kim, G. Son and J. Lee (BOE HYDIS TECHNOLOGY)
o 1585 The Analysis of the Poly-Si TFTs with Counter-Doped Lateral Body Terminal S. Han, H. Shin, J. Park, S. Choi (Seoul National University) and M. Han (Seoul National Univ.)
o 1586 Poly-Si Thin Fim Transistor with Multiple Nanowire Channels Prepared by Excimer Laser Annealing P. Yang (National Taiwan University), C. Meng (Graduate Institute of Electrical Engineering National Taiwan University), M. Tsai (Graduate Institute of Electronics Engineering National Taiwan University) and S. Lee (Graduate Institute of Electrical Engineering National Taiwan University)
o 1587 High-Performance Low Temperature Poly-Silicon Thin Film Transistors Fabricated by Excimer Laser Irradiation with Bottom-Gate Structure C. Tsai, H. Chen, H. Chen and H. Cheng (National Chiao Tung University)
o 1588 Deposition of Highly Crystallized Poly-Si Thin Films on Polymer Substrates Using Pulsed-Plasma CVD under Near-Atmospheric Pressure M. Matsumoto (Center for Interdisciplinary Research, Tohoku University), M. Suemitsu (Tohoku Univ.), T. Yara, N. Setsuo, U. Tuyoshi (Sekisui Chemicals Co. Ltd) and T. Yasutake (ETRI, AIST, Tsukuba)
o 1589 Novel Characterization Technique for Oxidation Processes Y. V. Sokolov (Fairchild Semiconductor)
o 1590 Design, Fabrication and Characterization of Parylene-Packaged Thin-Film Transistors H. Lo and Y. Tai (California Institute of Technology)
o 1591 The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress C. Hwang, S. Ko Park, S. Chung, J. Lee, Y. Yang, L. Do and H. Chu (ETRI)
o 1592 The Improvement of Electrical Characteristic of Solution Processed Organic Thin-Film Transistors with 6,13-bis (triisopropylsilylethynyl) Pentacene Films Employing HMDS Treatment Y. Kim (Korea Electronics Technology Institute), J. Lee, M. Han (Seoul National Univ.) and J. Han (Korea Electronics Technology Institute)
 

Wednesday, November 1, 2006

Universal 19, 1st Floor, Expo Center

Non-Silicon TFTs

Co-Chairs: Y. Yamamoto and A, Nathan
TimeAbs#Title and Authors
08:30 1593 Organic Thin Film Transistors and Contact-Related Effects D. J. Gundlach (NIST)
09:00 1594 Hole Mobility in Pentacene Field-effect Thin Film Transistors H. Kwok (University of Victoria)
09:20 1595 Effects of Pentacene Active Film Thickness on the Threshold Voltage of Pentacene Thin Film Transistors R. Garcia (URV), B. Iñiguez (Universitat Rovira i Virgili), M. J. Deen (McMaster University), J. Puigdollers, C. Voz (Universitat Politecnica de Catalunya) and M. Estrada (CINVESTAV-IPN)
09:40 1596 Integrated Circuits Based on Amorphous Indium-Gallium-Zinc-Oxide-Channel Thin-Film Transistors M. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi (Canon Inc.), K. Nomura (ERATO-SORST, Tokyo Inst. of Tech.), T. Kamiya (Tokyo Institute of Technology) and H. Hosono (ERATO-SORST, Tokyo Inst. of Tech.)
10:00 1597 All-Solution-Processed Organic Thin Film Transistors Fabricated by Non-Piezoelectric Inkjet Printing I. Takasu, K. Sugi, Y. Nomura, H. Nakao, K. Mori, I. Amemiya and S. Uchikoga (Toshiba Corporation)
10:20 Intermission (20 Minutes)
10:40 1598 Recent Progress in Amorphous Oxide Semiconductors and Thin Film Transistors T. Kamiya (Tokyo Institute of Technology), K. Nomura and H. Hosono (ERATO-SORST, Tokyo Inst. of Tech.)
11:10 1599 Thin-Film Transistors in Disordered Semiconductors for High Performance Macroelectronic Circuits. F. Balon (ATI, University of Surrey) and J. M. Shannon (Advanced Technology Institute)
 

Non LCD Applications

Co-Chairs: D. Gundlach and H. Hosono
TimeAbs#Title and Authors
14:00 1600 Artificial Retina using Thin-Film Photodiode and Thin-Film Transistor M. Kimura, T. Shima and T. Yamashita (Ryukoku University)
14:30 1601 Non-volatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure H. Nominanda and Y. Kuo (Texas A&M University)
14:50 1602 Sensitivity of Suspended-Gate Polysilicon TFTs to Charge Variation and Application to DNA Recognition T. Mohammed-Brahim, F. Bendriaa, F. Le Bihan, A. Salaun and O. Bonnaud (University Rennes 1)
15:10 1603 The Boron Carbide Transistor: A New Neutron Detector K. A. Nelson (Univ. of Nebraska and Nebraska Wesleyan), I. Sabirianov and J. I. Brand (University of Nebraska-Lincoln)
15:30 Intermission (20 Minutes)
15:50 1604 Process Technologies for High-Resolution AM-PLED Displays on Flexible Metal Foil Substrates T. Chuang, M. Troccoli (Lehigh University), P. Kuo, A. Jamshidi, M. Hatalis (Display Research Laboratory, Department of Electrical and Computer Engineering, Lehigh University), J. Spirko, K. Klier (Department of Chemistry, Lehigh University), I. Biaggio (Department of Physics, Lehigh University), A. T. Voutsas, T. Afentakis (Sharp Laboratories of America Camas, WA) and J. Hartzell (Sharp Labs of America)
16:10 1605 Uniform OLED-Pixels Using Microcrystalline Silicon TFTs for Active-Matrix Addressing T. Mohammed-Brahim, A. Gaillard, R. Rogel, S. Crand (University Rennes 1), C. Prat and P. Leroy (Thomson R&D)
16:30 1606 Elimination of an OLED Current Error Caused by the Hysteresis Phenomenon of a-Si TFT for AMOLED J. Lee, S. Park and M. Han (Seoul National Univ.)
16:50 Concluding Remarks (10 Minutes)