210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E3 - Atomic Layer Deposition Applications 2

Dielectric Science and Technology
 

Monday, October 30, 2006

Universal 12, 1st Floor, Expo Center

Emerging ALD Applications I

Co-Chairs: A. Londergan and O. van der Straten
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10 1047 Atomic Layer Deposition for Nano-Fabrication of 3D Optoelectronic Devices C. J. Summers and E. Graugnard (Georgia Institute of Technology)
10:40 1048 Atomic Layer Deposited Films for Micro- and Nano-Scale Electro-Mechanical Systems V. M. Bright and S. M. George (University of Colorado)
11:10 1049 Applications and Opportunities for Plasma-Assisted Atomic Layer Deposition E. Kessels (Eindhoven University of Technology)
 

Dielectrics Processing

Co-Chairs: S. B. Kang and S. Haukka
TimeAbs#Title and Authors
14:00 1050 HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method H. Jeon (Hanyang University)
14:30 1051 Electrical Properties and Thermal Stabilities of HfZrOx by Atomic Layer Deposition Technique for ULSI Application Y. Jung (IPS Ltd.), S. Lee (Integrated Process System Ltd.) and S. Lim (IPS Ltd.)
14:50 1052 ALD Modeling for Thickness and Composition Control of Multi-Component Thin Films H. Chung and S. Kang (Korea Advanced Institute of Science and Technology)
15:10 1053 Extra Low-Temperature SiO2 Deposition Using Aminosilanes C. Dussarrat, I. Suzuki and K. Yanagita (Air Liquide Laboratories)
 

Interconnect ALD Applications

Co-Chairs: O. van der Straten and S. Mathad
TimeAbs#Title and Authors
15:50 1054 Barrier Deposition for Advanced Interconnects M. Schaekers, Z. Tőkei, Y. Li and L. Carbonel (IMEC)
16:20 1055 Comparison of Electromigration in Cu Interconnects with ALD or PVD TaN Liners C. Hu, L. Gignac, E. Liniger, S. Grunow, A. Simon (IBM) and S. Liew (Chartered Semiconductor Manufacturing)
16:40 1056 Effects of NH3 Pulse Plasma on Atomic Layer Deposition of Tungsten Nitride Diffusion Barrier Y. Kim (Korea Institute of Science and Technology) and C. Lee (Kookmin Univ.)
17:00 1057 Barrier Characteristics of HfN Films Deposited by Using the Remote Plasma-Enhanced Atomic Layer Deposition Method W. Jeong, K. Lee, K. Kim, Y. Kim and H. Jeon (Hanyang University)
17:20 1058 "Seedless" Copper Electrochemical Deposition on Air Exposed TaN Barrier Layers with Pd and Ru Adhesion Promoters D. J. Duquette (Rensselaer Polytechnic Institute) and N. Lay (RPI)
17:40 1059 New Precursors for Copper ALD J. A. Norman and M. Perez (Air Products)
 

Tuesday, October 31, 2006

Universal 12, 1st Floor, Expo Center

Progress in ALD Equipment and Processing

Co-Chairs: S. B. Kang and M. Schaekers
TimeAbs#Title and Authors
10:00 1060 Recent Trends on the ALD Technology for ULSI Device Fabrication K. Lee (IPS Ltd.), S. Lee and S. Kim (Integrated Process System Ltd.)
10:30 1061 ALD Technology - Present and Future Challenges S. Haukka (ASM Microchemistry)
11:00 1062 High Performance ALD Reactor for High-k Films J. Dalton, H. Kim, Z. Zhang, T. Seidel, Z. Karim and S. Ramanathan (Aixtron-Genus)
11:20 1063 Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3 Y. Senzaki (Rohm and Haas Electronic Materials), L. Bartholomew, C. Barelli, J. Owyang (AVIZA Technology), D. Shenai (Rohm & Haas Electronic Materials) and C. Marsman (Rohm and Haas Electronic Materials)
11:40 1064 Silicon Nitride Molecular Layer Deposition Process Development using Dichlorosilane and Ammonia D. L. O'Meara (TEA), K. Hasebe (TEL), A. Dip (TEA), S. Maku (TEL), K. Matsushita, R. Mo, P. Higgins, M. Chudzik (IBM), M. Gribelyuk (IBM SRDC East Fishkill) and L. Tai (IBM)
 

Emerging ALD Applications II

Co-Chairs: J. Elam and E. Kessels
TimeAbs#Title and Authors
14:00 1065 Atomic Layer Deposition on Biological Macromolecules: Metal Oxide Coating of Tobacco Mosaic Virus, Ferritin and DNA M. Knez (Max-Planck-Institute MSP), A. Kadri, C. Wege (University of Stuttgart), U. Gösele (Max-Planck-Institute of Microstructure Physics), H. Jeske (University of Stuttgart) and K. Nielsch (Max-Planck-Institute of Microstructure Physics)
14:30 1066 Fabrication and Characteristics of TiO2 Nanotubes Using Atomic Layer Chemical Vapor Deposition (ALCVD) J. Kim, D. Cha, B. Lee, M. Kim (University of Texas at Dallas), S. Won, H. Shin and J. Lee (Kookmin University)
14:50 1067 Area Selective Atomic Layer Deposition of Titanium Dioxide D. W. Hess, A. Sinha and C. Henderson (Georgia Institute of Technology)
 

Emerging ALD Applications III

Co-Chairs: S. De Gendt and C. Summers
TimeAbs#Title and Authors
15:30 1068 Transparent Conducting Oxides at High Aspect Ratios by ALD M. J. Pellin, J. W. Elam (Argonne National Laboratory), A. B. Martinson and J. T. Hupp (Northwestern University)
16:00 1069 Atomic Layer Deposition of Electrocatalytic Platinum for Solid Oxide Fuel Cells S. F. Bent and X. Jiang (Stanford University)
16:30 1070 Synthesis and Properties of ZrO2-In2O3 Overlayers by ALD on the Porous SOFC State-of-the Art Cathode M. Cassir, C. Brahim and A. Ringuedé (ENSCP)
16:50 1071 Nucleation and Growth of Noble Metals on Oxide Surfaces Using Atomic Layer Deposition J. W. Elam, A. V. Zinovev, J. Hryn and M. J. Pellin (Argonne National Laboratory)
17:10 Concluding Remarks (10 Minutes)
 

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs: J. Elam and A. Londergan
TimeAbs#Title and Authors
o 1072 Effect of Process Pressure on Atomic Layer Deposition of Al2O3 M. Li, Y. Chang, H. Wu, C. Huang, J. Chen, J. Lue and S. Chang (Promos Technologies Inc.)
o 1073 Crystallization of Amorphous Si Thin Films Using Sub-nm Nickel Oxide Thin Layers Deposited by Atomic Layer Deposition K. An, W. Cho (Korea Research Institute of Chemical Technology), B. So, Y. You, J. Hwang (Hongik University), S. Lee, T. Chung and C. Kim (Korea Research Institute of Chemical Technology)
o 1074 Atomic Layer Depositon of TiO2 Thin Films Using NH3 Gas S. Kwon, Y. Jin and S. Kang (Korea Advanced Institute of Science and Technology)
o 1075 Radical-Assisted Silcore(TM)CVD of Si3N4 and SiO2 Nanolaminates P. R. Fischer (ASM Belgium), E. Oosterlaken, B. Bozon and P. M. Zagwijn (ASM Europe B.V.)
o 1076 Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor C. Hodson (Oxford Instruments Plasma Technology), N. Singh (Oxford Instruments), S. Heil (Eindhoven University of Technology), H. Hemmen (TU Eindhoven) and E. Kessels (Eindhoven University of Technology)
o 1077 Atomic Layer Deposition of Al2O3/NiO/Al2O3 Laminate Structures for Nonvolatile Memory Device Applications K. An, W. Cho, S. Lee, T. Chung, Y. Lee, C. Kim (Korea Research Institute of Chemical Technology), Y. You and J. Hwang (Hongik University)
o 1078 Enhancement of Dielectric Properties in Hf-Al-O Films Deposited by Plasma-Enhanced Atomic Layer Deposition P. Park and S. Kang (Korea Advanced Institute of Science and Technology)
o 1079 Improvement of the Surface Morphology and the Crystallinity of PEALD-SrTiO3 Thin Films by Inserting SrO Interlayer on Ru Bottom Elecrodes J. Kim, J. Ahn (Korea Advanced Institute of Science and Technology), J. Kim, S. Yeom, J. Roh (Hynix Semiconductor Incorporated) and S. Kang (Korea Advanced Institute of Science and Technology)
o 1080 Optical Properties of AlTiO Films Grown by PEALD J. Lim, S. Yun and H. Kim (ETRI)
o 1081 WNx Film Prepared by Atomic Layer Deposition using F-Free BTBMW and NH3 Plasma Radical for ULSI Applications D. You (IPS Ltd.), S. Kim (Integrated Process System Ltd.), K. Lee, S. Lee and T. Seo (IPS Ltd.)
o 1082 Characteristics of ZrAlO Films Deposited by Plasma Enhanced Atomic Layer Deposition S. Yun, J. Lim and H. Kim (ETRI)
o 1083 Selective Atomic Layer Deposition of ZrO2 and Cu Using Soft Lithography J. Kim, B. Lee (University of Texas at Dallas), S. Lee, H. Shin and J. Lee (Kookmin University)