210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E4 - High Dielectric Constant Gate Stacks 4

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 30, 2006

Universal 9, 1st Floor, Expo Center

Electrical Characterization

Co-Chairs: S. Kar and P. K. Hurley
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10 1084 Present Status and Recent Advancements in Corona-Voltage Non-contact Electrical Metrology of Dielectrics for IC-manufacturing M. Wilson, D. Marinskiy, A. Byelyayev, J. D'Amico, A. Findlay, L. Jastrzebski and J. Lagowski (SDI)
10:40 1085 Work Function Characterization of TaSiN and TaCN Electrodes Using CV, IV, IPE and SKPM H. Xiong (National Institute of Standards and Technology), N. Nguyen, J. Suehl and E. Vogel (NIST)
11:00 1086 Influence of Process Parameters on Leakage Current of HfSiOx Dielectrics A. Avellan, M. Patz, E. Erben, A. Ivanov and S. Kudelka (Qimonda Dresden GmbH & Co. OHG)
11:20 1087 Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators H. Ota (MIRAI-AIST), A. Ogawa, M. Kadoshima, K. Iwamoto, K. Okada, H. Satake, T. Nabatame (MIRAI-ASET) and A. Toriumi (MIRAI-AIST, Univ. of Tokyo)
11:40 1088 Experimental Study of the Impact of SO Phonon Scattering in High-K Gate Dielectric MOSFETs S. Atarah, M. M. De Souza and S. Atarah (De Montfort University)
12:00 Session Concluding Remarks (20 Minutes)
 

Substrates

Co-Chairs: M. Houssa
TimeAbs#Title and Authors
14:00 1089 Integration of ALD High-K Dielectrics on III-V Compound Semiconductors P. Ye (Purdue University)
14:30 1090 Impact of Dielectric Material Selection on Electrical Characteristics of High-k/Ge Devices K. Kita, H. Nomura, T. Nishimura (The University of Tokyo) and A. Toriumi (MIRAI-AIST, Univ. of Tokyo)
14:50 Session Concluding Remarks (10 Minutes)
 

Interfaces and Defects

Co-Chairs: S. De Gendt and M. Wilson
TimeAbs#Title and Authors
15:20 1091 Interface States in Hf-Based Stacks and their Impact on the Reliability of these Alternative Oxides X. Garros, G. Reimbold and F. Martin (CEA-Leti)
15:50 1092 Electrically Active Interface Defects in the (100)Si/SiOx/HfO2/TiN system: Origin and Passivation P. K. Hurley (University College Cork), K. Cherkaoui (University College Cork, Tyndall National Institute) and A. Groenland (University of Twente)
16:20 1093 Correlation Between High-K Properties and Interfacial Chemical Structure of ALD HfO2 Thin Films on Si, Si1-xGex and Ge Substrates T. Park, C. Hwang, J. Kim, J. Jang and M. Seo (Seoul National University)
16:50 1094 Thermal Stability of Stack Structures of AlN and La2O3 Thin Films D. Eom, C. Hwang and H. Kim (Seoul National University)
17:10 1095 Physics of Metal/High-k Interfaces T. Nakayama (Chiba University), K. Shiraishi (University of Tsukuba), S. Miyazaki (Hiroshima University), Y. Akasaka (Selete), K. Torii (Hitachi Corporation), P. Ahmet (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Ohmori, N. Umezawa (National Institute for Materials Science), H. Watanabe (Dept. of Precision Science and Technology, Osaka University), T. Chikyow (NIMS (Japan)), Y. Nara, H. Iwai and K. Yamada (Waseda University)
17:40 Session Concluding Remarks (30 Minutes)
 

Tuesday, October 31, 2006

Universal Ballroom, 2nd Floor, Expo Center

Tuesday Evening Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o 1096 The Improvement in Dielectric Characteristics and Reliability of Atomic-Layer-Deposited HfO2 Thin Films by In-Situ NH3 Injection J. Kim, T. Park, M. Cho, M. Seo, J. Jang and C. Hwang (Seoul National University)
o 1097 Development of a Selective Tantalum Carbide Etchant J. S. Starzynski (Honeywell International)
o 1098 Evaluation of TSA for HfSiOx Film Deposition C. Dussarrat, I. Suzuki and K. Yanagita (Air Liquide Laboratories)
o 1099 Towards the Fabrication of Ultra-Thin SOI on Si (001) using Epitaxial Oxide and Epitaxial Semiconductor Growth Processes D. Lichtenwalner, J. M. Hydrick, V. Vankova (North Carolina State University) and A. I. Kingon (NC State University)
o 1100 Abstract Withdrawn
 

Wednesday, November 1, 2006

Universal 9, 1st Floor, Expo Center

Physical/Chemical Characterization

Co-Chairs: H. Iwai and C. Hwang
TimeAbs#Title and Authors
08:00 1101 Analysis of Electronic Structure of High-K Films using STEM-EELS N. Ikarashi, K. Manabe, K. Takahashi and M. Saitoh (NEC Corporation)
08:30 1102 Advanced Nano-Analysis of High-K Dielectric Stacks and Associated Materials M. MacKenzie, A. Craven (University of Glasgow), D. McComb (Imperial College London), S. De Gendt (IMEC and KULeuven), F. Docherty (University of Glasgow), C. McGilvery (Imperial College London) and S. McFadzean (University of Glasgow)
09:00 1103 Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes T. Conard, T. Schram (IMEC), A. Akheyar (Infineon), K. Arstila (IMEC and KULeuven), G. Zschaetzsch, W. Vandervorst and S. S. Degendt (IMEC)
09:20 1104 Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100) S. Miyazaki (Hiroshima University)
 

Joint E3/E4 Session on ALD High-K (Other) Applications

Co-Chairs: A. Londergan and D. Landheer
TimeAbs#Title and Authors
10:10 1105 ALD Options for Si-Integrated High-Density Capacitors in Portable Devices F. Roozeboom (NXP Research), J. Klootwijk (Philips), J. Verhoeven, E. van den Heuvel, W. Dekkers (Philips Research), S. Heil, H. van Hemmen, R. van de Sanden and E. Kessels (Eindhoven University of Technology)
10:40 1106 Thermal and Remote Plasma ALD of Al2O3 for Trench Capacitors H. van Hemmen, S. Heil (Eindhoven University of Technology), J. Klootwijk (Philips), F. Roozeboom (NXP Research), C. Hodson (Oxford Instruments Plasma Technology), R. van de Sanden and E. Kessels (Eindhoven University of Technology)
11:00 1107 Structural and Chemical Investigation of Annealed Al2O3 Films for Interpoly Dielectric Applications in Flash Memories M. Alessandri, R. Piagge, M. Caniatti, A. Del Vitto (STMicroelectronics), C. Wiemer (CNR-INFM Laboratorio MDM), G. Pavia, S. Alberici, E. Bellandi and A. Nale (STMicroelectronics)
11:20 1108 Nanocrystalline Indium Tin Oxide Embedded Zirconium-doped Hafnium Oxide for Nonvolatile Memory Applications A. Birge, C. Lin and Y. Kuo (Texas A&M University)
11:40 1109 Cyclic Plasma-Enhanced Chemical Vapor Deposition of Ge2Sb2Te5 Films using Metal-Organic Sources for Phase Change RAM B. Choi, C. Hwang (Seoul National University), J. Lee, J. Jeong (Quros Co.), Y. Kim and S. Hong (Hynix)
 

Reliability Issues

Co-Chairs: D. Misra and X. Garros
TimeAbs#Title and Authors
14:00 1110 Threshold Voltage Instability and Low Frequency Noise in Hafnium-Based Gate Dielectrics F. Crupi (University of Calabria)
14:30 1111 NBTI Effects in pMOSFETS with TiN/Hf-Silicate Based Gate Stacks N. A. Chowdhury (New Jersey Inst of Technology) and D. Misra (New Jersey Institute of Technology)
14:50 1112 Improvement in NBTI of Metal Gate pMOSFETs with Sub-1nm EOT HfSiON Gate Dielectric by Ar/N2/H2(D2) Plasma Nitridation S. Inumiya (Semiconductor Leading Edge Technologies, Inc.), T. Aoyama and Y. Nara (Semiconductor Leading Edge Technologies Inc.)
15:10 1113 Charge Trapping Characteristics of W-La2O3-nSi Mis Capacitors After Post-Metallization Annealing PMA in N2 J. Molina (Tokyo Institute of Technology), K. Tachi (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Kakushima (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), P. Ahmet (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Tsutsui, N. Sugii (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), T. Hattori (FCRC, Tokyo Institute of Technology; ARL, Musashi Institute of Technology) and I. Hiroshi (Tokyo Institute of Technology)
15:30 1114 Reliability and Stability Issues for Lanthanum Silicate as a High-K Dielectric D. Lichtenwalner, J. S. Jur (North Carolina State University) and A. I. Kingon (NC State University)
15:50 1115 Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and Memories Y. Kuo (Texas A&M University)
16:20 Session Concluding Remarks (20 Minutes)
 

Modelling

Co-Chairs: M. Houssa and Y. Kuo
TimeAbs#Title and Authors
16:50 1116 Electronic Structure of Defects in Dielectrics of Technological Interest with and Without Electronic Correlation V. Fiorentini (Universita' di Cagliari), A. Filippetti (SLACS-CNR, University of Cagliari, Italy) and G. Lopez (SLACS-CNR, Uni Cagliari)
17:20 1117 Theoretical Insigths Into the High-K Dielectrics on Silicon J. L. Gavartin, D. Munoz Ramo and A. Shluger (University College London)
17:50 1118 Electronic Structure and Dielectric Properties of CaCu3Ti4O12 Revisited P. Alippi (CNR), V. Fiorentini (Universita' di Cagliari) and A. Filippetti (SLACS-CNR, University of Cagliari, Italy)
18:10 1119 Numerical Analysis of Gate Stacks M. Karner (Technische Universität Wien), S. Holzer (Institute for Microelectronics, TU Vienna), M. Vasicek, W. Goes (Technische Universität Wien), M. Wagner (TU Vienna), H. Kosina (Technische Universität Wien) and S. Selberherr (TU Wien)
18:30 1120 Dielectric Properties of High-K Materials : a Theoretical View V. Fiorentini (Universita' di Cagliari), P. Delugas (IMEC vzw), A. Filippetti (SLACS-CNR, University of Cagliari, Italy) and G. Pourtois (IMEC, Leuven, Belgium)
18:50 Session Concluding Remarks (20 Minutes)
 

Thursday, November 2, 2006

Universal 9, 1st Floor, Expo Center

Gate Electrode Materials and Processing

Co-Chairs: S. Kar and C. Osburn
TimeAbs#Title and Authors
08:00 1121 On the Issue of Work Function Tuning of Nickel Silicide Gates N. Biswas, B. Lee (NCSU) and V. Misra (NC State University)
08:30 1122 Composition Control of TaSixNy Thin Films by Chemical Vapor Deposition for Future n-MOSFET Metal Gate Electrode Y. Sugita, T. Aoyama and Y. Nara (Semiconductor Leading Edge Technologies Inc.)
08:50 1123 A Combinatorial Study of Metal Gate Electrodes on HfO2. M. L. Green, K. Chang (NIST), I. Takeuchi (University of Maryland) and T. Chikyow (NIMS (Japan))
09:20 1124 Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 - K. Ohmori (National Institute for Materials Science), P. Ahmet (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Shiraishi, K. Yamabe (University of Tsukuba), H. Watanabe (Dept. of Precision Science and Technology, Osaka University), Y. Akasaka (Selete), N. Umezawa, K. Nakajima, M. Yoshitake (National Institute for Materials Science), T. Nakayama (Chiba University), K. Chang (NIST), K. Kakushima (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), Y. Nara (Semiconductor Leading Edge Technologies Inc.), M. L. Green, H. Iwai, K. Yamada (Waseda University) and T. Chikyow (NIMS (Japan))
09:50 Intermission (20 Minutes)
10:10 1125 Advanced Metal Gate Electrode Options Compatible with ALD and AVD® HfSiOx-Based Gate Dielectrics Z. Karim (AIXTRON-Genus), O. Biossiere, C. Lohe (Aixtron AG), Z. Zhang, W. Park (Aixtron-Genus), C. Manke, P. K. Baumann (Aixtron AG), J. Dalton, S. Ramanathan, J. Lindner and T. Seidel (Aixtron-Genus)
10:40 Session Concluding Remarks (20 Minutes)
 

High-K Processing

Co-Chairs: D. Misra and M. L. Green
TimeAbs#Title and Authors
11:00 1126 Materials and Processes for High k Gate Stacks: Results from the FEP Transition Center C. Osburn (NC State University), S. Campbell (University of Minnesota), A. Demkov (UT Austin), E. Eisenbraun (University at Albany, SUNY), E. Garfunkel, T. Gustafsson (Rutgers University), A. I. Kingon (NC State University), J. Lee (UT Austin), D. Lichtenwalner (North Carolina State University), G. Lucovsky (NC State University), T. Ma (Yale University), J. Maria, V. Misra, R. Nemanich, G. Parsons (NC State University), D. Schlom (Pennsylvania State University), S. Stemmer (UC Santa Barbara), R. M. Wallace (Universityof Texas at Dallas) and J. Whitten (NC State University)
11:40 1127 Development of 300mm MOCVD HfSiOx Process X. Shi, M. Schaekers (IMEC), L. Date (AMAT), A. Rothschild, J. Everaert (IMEC), S. Van Elshocht (IMEC vzw) and E. Rosseel (IMEC)
12:00 1128 Effect of Oxygen for Ultra-Thin La2O3 Film Deposition K. Tachi, H. Iwai, T. Hattori (FCRC, Tokyo Institute of Technology; ARL, Musashi Institute of Technology), N. Sugii, K. Tsutsui (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), P. Ahemt (Tokyo Institute of Technology) and K. Kakushima (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology)
 

High-K Materials

Co-Chairs: S. De Gendt and M. Allessandri
TimeAbs#Title and Authors
14:00 1129 Factors Influencing Characteristics of Hafnium Based High-K Dielectrics D. H. Triyoso (Freescale Semiconductor Inc.)
14:30 1130 Alternative Gate Dielectric Materials S. Van Elshocht (IMEC vzw), A. Hardy (University of Hasselt), S. De Gendt (IMEC and KULeuven), C. Adelmann, D. P. Brunco (IMEC vzw), M. R. Caymax, T. Conard (IMEC), P. Delugas (IMEC vzw), P. Lehnen (AIXTRON AG), D. Shamiryan (IMEC), R. Vos, T. Witters, P. Zimmerman (IMEC vzw), M. M. Meuris and M. M. Heyns (IMEC)
15:00 1131 Ultra-Thin (EOT ~ 0.31nm) and Low Leakage Dielectrics of La-Aluminate Deposited Directly on Si Substrate M. Suzuki (Toshiba corporation), M. Tomita (Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation), T. Yamaguchi, N. Fukushima (Corporate Research & Development Center, Toshiba Corporation), M. Koyama and A. Nishiyama (Toshiba Corporation)
15:30 1132 La2O3 Gate Dielectric Thin Film with Sc2O3 Buffer Layer for High Temperature Annealing Y. Shiino (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Kakushima (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), P. Ahmet (Frontier Collaborative Research Center, Tokyo Institute of Technology), K. Tsutsui, N. Sugii (Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology), T. Hattori and H. Iwai ()
15:50 1133 Laminated CeO2/HfO2 High-K Gate Dielectrics Grown by Pulsed Laser Deposition in Reducing Ambient K. Karakaya, B. Barcones (University of Twente), A. Zinine (MESA+ Institute for Nanotechnology, University of Twente), C. Rittersma (Philips Semiconductors), P. Graat, J. van Berkum (Philips Research), M. Verheijen (Philips Research Labs), G. Rijnders and D. Blank (University of Twente)
16:10 1134 Enhanced Dielectric Constant of HfO2 and Al2O3 Thin-Films with Silver Nanoparticles R. Ravindran, M. Othman, M. Yun (University of Missouri-Columbia), N. Biswas (NCSU), N. Mehta (Texas Instruments, Dallas), S. Guha, K. Gangopadhyays and S. Gangopadhyay (University of Missouri-Columbia)
16:30 Session Concluding Remarks (30 Minutes)
17:00 Symposium Concluding Remarks (10 Minutes)