210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E5 - Chemical Mechanical Polishing 8

Dielectric Science and Technology
 

Monday, October 30, 2006

Universal 20, 1st Floor, Expo Center

CMP Session 1

Co-Chairs: S. Seal and S. Sundaram
TimeAbs#Title and Authors
10:00 1135 Thermodynamics of Copper Electropolishing in Phosphoric Acid D. J. Duquette (Rensselaer Polytechnic Institute) and A. Mansson (Intel)
10:40 1136 Anion Effects on Cu-BTA Film Formation: Implications for CMP A. A. Gewirth, K. Stewart (University of Illinois), J. Zhang, S. Li and P. Carter (Cabot Microelectronics Corporation)
11:00 1137 Electrochemical Corrosion and Chemical Mechanical Polishing Performance of W and Ti Film Y. Seo and S. Park (Daebul University)
11:20 1138 Understanding Slurry Interaction and Optimizing Multiple Step Cu-CMP Process for 65nm Technology X. Wang, F. Chen and B. Lin (chartered semiconductor mfg)
11:40 1139 Novel Methods for Polishing Copper/Low K Dielectrics R. K. Singh (University of Florida), D. Singh, M. Dufourg (Sinmat Inc., Gainesville, FL. USA) and P. Kumar (University of Florida)
 

CMP Session 2

Co-Chairs: A. Chandra and S. Beaudoin
TimeAbs#Title and Authors
14:00 1140 Revealing Copper Electrochemistry in Basic Solutions: Another Step towards a "Traditional" CMP Y. Ein-Eli (Technion-Israel institute of Technology)
14:40 1141 Reduction of Defects after Poly Si CMP with Oxide Slurry S. Yun, S. Han (Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.), J. Lee (Samsung Electronics Co., LTD.), Y. Hong, J. Park (Division of Materials and Chemical Engineering, Hanyang Univ.), B. Yun (Samsung Electronics Co., LTD.), C. Hong (Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.), H. Cho and J. Moon (Samsung Electronics Co., LTD.)
15:00 1142 Chemical-Mechanical Planarization Compatible for Both Copper/Low K Level in a 90 nm Technology and Thick Copper Level in an RF Technology C. Perrot, Y. Loquet and P. Bouillon (ST Microelectronics)
15:20 1143 Novel Core-Shell Type Abrasive Particles for Oxide CMP Applications S. R. Mudhivarthi, C. Coutinho, A. Kumar and V. Gupta (University of South Florida)
 

CMP Session 3

Co-Chairs: D. Tamboli and Y. Obeng
TimeAbs#Title and Authors
16:00 1144 On Chemical-Mechanical Synergy in Copper CMP A. Chandra, W. Che and A. Bastawros (Iowa State University)
16:40 1145 In-Situ Determination of Electrolyte Composition and Voltage Modulation Effect on Electro-Chemical Mechanical Planarization of Copper (E-CMP) S. Seal, S. Deshpande and A. Vincent (University of Central Florida)
17:00 1146 Effect of Poly Silicon Wettability on Organic Type Defects in Poly CMP Y. Hong, Y. Kang, J. Park (Division of Materials and Chemical Engineering, Hanyang Univ.), S. Han, S. Yun, B. Yoon and C. Hong (Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD.)
17:20 1147 Effects of CMP Slurry Chemistry on Agglomeration of Alumina and Copper Surface Hardness R. V. Ihnfeldt and J. B. Talbot (University of California, San Diego)
 

Tuesday, October 31, 2006

Universal 20, 1st Floor, Expo Center

CMP Session 4

Co-Chairs: R. Rhoades and D. Duquette
TimeAbs#Title and Authors
08:00 1148 Issues Surrounding Use of Small Wafers to Study the Frictional, Thermal and Kinetic Attributes of CMP Processes A. Philipossian (University of Arizona), Y. Zhuang and L. Borucki (Araca Inc.)
08:40 1149 Analysis of Pre- and Post-Conditioned Polyurethane CMP Pad Surfaces as a Function of Conditioning Temperature A. Prasad, H. Xiang, J. Wang and E. E. Remsen (Cabot Microelectronics Corp.)
09:00 1150 Design and Evaluation of Novel Pad Grooves for Copper CMP D. Rosales-Yeomans, D. DeNardis (University of Arizona), L. Borucki (Araca Inc.) and A. Philipossian (University of Arizona)
09:20 1151 Analysis of Pads with Slanted Grooves for Copper CMP D. Rosales-Yeomans, D. DeNardis (University of Arizona), L. Borucki (Araca Inc.), T. Suzuki (Toho Engineering Co, LTD.) and A. Philipossian (University of Arizona)
09:40 1152 Studies of the Mechanical Properties of CMP Pads B. Kim (Purdue University), M. Tucker (Purdue Univeristy), J. Kelchner (Zeeko Technology) and S. Beaudoin (Purdue University)
 

CMP Session 5

Co-Chairs: Y. Li and A. Philipossian
TimeAbs#Title and Authors
10:00 1153 Evolution of CMP Technology for New Applications and Materials R. L. Rhoades (Enterpix, Inc.)
10:40 1154 Challenges in Ultra Low-K CMP V. Desai (New Mexico State University)
11:00 1155 Effect of Slurry Characteristics on the Surface Tribology During Copper CMP Process S. R. Mudhivarthi, V. Kakireddy, A. Kumar (University of South Florida) and Y. Obeng (Texas Instruments)
11:20 1156 Yield Improvement through Optimized Pad Conditioning for CMP Applications B. G. Basim and S. Kincal (Texas Instruments)
11:40 1157 Next Generation STI Slurries and Chemical Endpoint for 45 nm Node Technology B. L. Mueller (Rohm and Haas Electronic Materials), P. Flanagan, S. Lane, S. Lawing and K. Lindemann (Rohm and Haas)
 

CMP Session 6

Co-Chairs: V. Desai and J. Moon
TimeAbs#Title and Authors
14:00 1158 Mechanisms of Corrosion and its Prevention in Post-CMP Processing of Copper Interconnects G. Banerjee, D. Tamboli and R. Madhukar (Air Products & Chemicals)
14:40 1159 Effects of Abrasive Size and Concentration with An-ionic Surfactant on the Non-Prestonian Behavior of Ceria Slurry in STI-CMP H. Kang, J. Kim (Hanyang University), H. Park (Hynix Semiconductor Inc.), U. Paik and J. Park (Hanyang University)
15:00 1160 Surface Characterization and Flow Resistance Estimates for CMP Pads T. Sun (University of Arizona), L. Borucki, Y. Zhuang (Araca Inc.), D. Marks, T. Clark (Psiloquest) and A. Philipossian (University of Arizona)
15:20 1161 Nanotopography Impact of Surfactant Concentration and Molecular Weight of Nano-ceria Slurry on Oxide Removal Rate and Remaining Oxide Thickness Variation after STI CMP J. Park, H. Kang, K. Park, U. Paik and J. Park (Hanyang University)
 

CMP Session 7

Co-Chairs: K. Maex and K. Lindemann
TimeAbs#Title and Authors
16:00 1162 Composite Polymer Core - Silica Shell Abrasive Particles During Oxide CMP: a Defectivity Study S. Armini, S. Armini (IMEC/KU Leuven), C. M. Whelan and K. Maex (IMEC)
16:40 1163 Profile Measurements of Micro-Scratches Remaining on Polished Si(001) Wafers T. Shigetoshi, K. Arima, H. Inoue, T. Kawashima, T. Hirokane, T. Kataoka and M. Morita (Osaka University)
17:00 1164 Tuning the Removal Rate of Carbon Doped Oxide during Chemical Mechanical Polishing Z. Liu and J. Bian (Rohm and Haas Electronic Materials, CMP Technologies)
17:20 1165 Integrating a CMP Robust ILD Module J. J. Naughton and J. M. Towner (AMI Semiconductor)