210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

E7 - High Purity Silicon 9

Electronics and Photonics
 

Monday, October 30, 2006

Universal 13, 1st Floor, Expo Center

Crystal Growth and Wafer Processing

Co-Chairs: P. Stallhofer and V. Voronkov
TimeAbs#Title and Authors
10:00 1205 Some Remarks On CZ Silicon Growth and Dream of "Ideal Growth" O. Anttila (Okmetic Oyj)
10:40 1206 Elimination of Dislocations in the Neck Growth H. Sreedharamurthy (MEMC Electronics Materials Inc) and V. Nithianathan (MEMC Electronics Materials Inc.)
11:00 1207 High Pulling-Rate Defect-Free Crystals with Radial Asymmetric Characteristics Due to Controlled Melt Convection H. Cho (Korea Advanced Institute of Science and Technology), B. Lee (LG Siltron) and J. Lee (Korea Advanced Institute of Science and Technology)
11:20 1208 Melt Dynamics in Czochralski Crystal Growth of Silicon P. R. Gunjal (Washington University), M. S. Kulkarni (MEMC Electronic Materials) and P. A. Ramachandran (Department of Chemical Engineering, Washington University St. Louis, MO 63130 USA)
11:40 1209 Doping of Silicon Crystals with Bi and other Volatile Elements by the Pedestal Growth Technique H. Riemann, N. Abrosimov and N. Noetzel (Institute for Crystal Growth)
 

Crystal Growth and Wafer Processing-continued

TimeAbs#Title and Authors
14:00 1210 Rotationless Growth of Floating Zone Silicon A. Luedge, H. Riemann, B. Hallmann-Seiffert (Institute for Crystal growth), A. Muiznieks (University of Latvia) and F. Schulze (PV Silicon AG)
 

Oxygen, Nitrogen and Hydrogen in Silicon I

Co-Chairs: N. Inoue and J. Vanhellemont
TimeAbs#Title and Authors
14:20 1211 Oxygen Precipitation in Lightly and Heavily Doped Czochralski Silicon K. Sueoka (Okayama Prefectural Univ.)
15:00 1212 Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process D. Yang, Q. Ma, X. Ma and D. Duan (State Key Lab of Silicon Materials)
15:20 1213 Oxide Precipitate Nucleation via Coherent "Seed"-Oxide Phases G. Kissinger and J. Dabrowski (IHP)
15:40 Intermission (20 Minutes)
16:00 1214 Nitrogen Diffusion in Silicon: a Multi-Species Process V. V. Voronkov and R. J. Falster (MEMC Electronic Materials)
16:40 1215 Identification of Nitrogen-Oxygen Defects in Silicon N. Fujita, R. Jones (University of Exeter), S. Oberg (Luleå University of Technology) and P. Briddon (University of Newcastle upon Tyne)
 

Tuesday, October 31, 2006

Universal 13, 1st Floor, Expo Center

Oxygen, Nitrogen and Hydrogen in Silicon II

Co-Chairs: K. Suoeka and D. Yang
TimeAbs#Title and Authors
08:20 1216 Hydrogen-Related Donor Formation: Fabrication Techniques, Characterization, and Application to High-Voltage Superjunction Transistors H. Schulze (Infineon Technologies AG), M. Buzzo (Infineon Technologies Austria AG), F. Niedernostheide (Infineon Technologies AG), M. Rueb, H. Schulze (Infineon Technologies Austria AG) and R. Job (University of Hagen)
09:00 1217 Hydrogen Gettering and Platelet Formation in Implanted and Hydrogenated Silicon R. Job (University of Hagen), W. Duengen (University Hagen), Y. Ma (IMEC), W. Fahrner (University Hagen), L. Keller, J. Horstmann and H. Fiedler (University Dortmund)
09:20 1218 Precise Control of Annealed Wafer For Nanometer Devices Y. Matsushita, H. Nagahama and R. Takeda (TOSHIBA Ceramics Co. Ltd.)
09:40 Intermission (20 Minutes)
 

Point Defects, Stress and Device Performance

Co-Chairs: M. Kittler and P. Wilshaw
TimeAbs#Title and Authors
10:00 1219 Ab-Initio Calculations of the Energetics and Kinetics of Defects and Impurities in Silicon W. Windl (The Ohio State University)
10:40 1220 Lateral Incorporation of the Intrinsic Point Defects in Czochralski Silicon Crystals M. S. Kulkarni and V. V. Voronkov (MEMC Electronic Materials)
11:00 1221 Mechanical Stress and Defect Formation in Device Processing M. Polignano, G. Carnevale, P. Fantini and I. Mica (ST Microelectronics)
11:20 1222 Simulation of Slip during High-Temperature Annealing of Silicon Wafers in Vertical Furnaces P. Gupta (MEMC Electronic Materials, Inc.) and M. S. Kulkarni (MEMC Electronic Materials)
11:40 1223 Effects of Annealing on the Electrical Properties of Nitrogen-Doped Float-Zoned Silicon V. V. Voronkov (MEMC Electronic Materials), G. Voronkova, A. Batunina (Institute of Rare Metals), R. J. Falster, L. Moiraghi (MEMC Electronic Materials) and M. Milvidski (Institute of Rare Metals)
 

Metallic Contamination and Gettering

Co-Chairs: O. Anttilla and B. Kolbesen
TimeAbs#Title and Authors
14:00 1224 Improvement of Silicon Carrier Lifetimes by Impurity Gettering as Measured Using Cathodoluminescence P. R. Wilshaw, J. D. Murphy, D. Stowe (University of Oxford), R. J. Falster (MEMC Electronic Materials), S. Galloway (Gatan UK) and S. Senkader (University of Oxford)
14:40 1225 Analysis of the Segregation Phenomena of Copper in P/P+ Epitaxial Silicon Wefers K. Nakamura (Komatsu Electronic Metals Co.,Ltd.), H. Iga and J. Tomioka (Komatsu Electronic Metals Co.)
15:00 1226 Reducing Iron in Single Crystal Silicon grown using CZ process H. Sreedharamurthy (MEMC Electronics Materials Inc)
15:20 1227 Modeling and Optimization of Internal Gettering of Iron in Silicon A. Haarahiltunen, H. Väinölä, M. Yli-Koski, J. Sinkkonen (Helsinki University of Technology) and O. Anttila (Okmetic Oyj)
15:40 Intermission (20 Minutes)
16:00 1228 Performance-Limiting Oxygen-Related Defects in Silicon Solar Cells J. Schmidt (Institut für Solarenergieforschung Hameln/Emmerthal (ISFH)) and K. Bothe (Institute for Solar Energy Research (ISFH))
16:40 1229 Proof of Interstitial Cobalt Defects in Silicon Float Zone Crystals Doped During Crystal Growth H. Lemke (Technische Universitaet Berlin) and K. Irmscher (Institute for Crystal Growth)
17:00 1230 Quantitative Evaluation on Gettering Efficiency in p-Type Silicon using a Stable 65Cu Isotope K. Kim (Siltron Inc.) and S. Park (Pohang University of Science and Technology)
 

Wednesday, November 1, 2006

Universal 13, 1st Floor, Expo Center

Characterization and Lifetime Analysis I

Co-Chairs: M. Watanabe and G. Rozgonyi
TimeAbs#Title and Authors
10:00 1231 Infrared Absorption Spectroscopy of Complexes in Low Carbon Concentration, Low Electron Dosage Irradiated CZ Silicon Crystal N. Inoue (Osaka Prefecture University), S. Yamazaki, Y. Goto, T. Kushida (Toyota Motor Co.) and T. Sugiyama (Toyota Central R&D Labs. Inc.)
10:40 1232 Some Recent Advances in Contactless Silicon Characterization D. Schroder (Arizona State University)
11:20 1233 Comparative Study of Carrier Lifetime Variation with Doping in Si and Ge J. Vanhellemont (Ghent University) and E. Gaubas (Vilnius University)
11:40 1234 Impact of Halo Implantation on the Lifetime Assessment in Partially Depleted SOI Transistors M. Galeti (University of São Paulo), J. A. Martino (University of São Paulo/Centro Universitário da FEI), E. R. Simoen and C. L. Claeys (IMEC)
 

Characterization and Lifetime II

Co-Chairs: D. Schroder and E. Simoen
TimeAbs#Title and Authors
14:00 1235 Delineation of Crystalline Defects by Preferential Etching: Still more Alchemy than Science? B. O. Kolbesen (Johann Wolfgang Goethe-University)
14:40 1236 Abstract Withdrawn
15:00 1237 Hierarchy of Tools for the Characterization of Performance Limiting Defects in PV and IC Materials G. Rozgonyi (NC State University) and M. C. Wagener (NC State U)
15:40 Intermission (20 Minutes)
16:00 1238 Observation of Vacancy in High Purity Silicon Crystal Using Low-Temperature Ultrasonic Measurements T. Goto (Niigata University), H. Yamada-Kaneta (Fujitsu Laboratories Ltd.), Y. Saito, Y. Nemoto, K. Sato (Graduate School of Science and Technology, Niigata University), K. Kakimoto (Research Institute for Applied Mechanics, Kyushu University) and S. Nakamura (Center for Low Temperature Science, Tohoku University)
16:40 1239 DLTS Study of Room-Temperature Defect Annealing in N-Type High-Purity FZ Si J. Bleka, E. V. Monakhov (University of Oslo), B. S. Avset (The Norwegian Radiation Protection Authority) and B. G. Svensson (Department of Physics, University of Oslo)
 

Thursday, November 2, 2006

Universal 13, 1st Floor, Expo Center

Alternative Substrates and Devices

Co-Chairs: C. Claeys and R. Falster
TimeAbs#Title and Authors
08:20 1240 SOI Material Readiness for 45nm and Sub-45nm Device Options C. Maleville (SOITEC)
09:00 1241 Fabrication of Directly Bonded Si Substrates with Hybrid Crystal Orientation for Advanced Bulk CMOS Technology K. Bourdelle (Soitec)
09:20 1242 From Smart-Cut to Soft-Cut: Mechanisms of Hydrogen Plasma Supported Layer Exfoliation in Silicon R. Job (University of Hagen), W. Duengen (University Hagen), Y. Ma (IMEC) and J. Horstman (University of Dortmund)
09:40 Intermission (20 Minutes)
10:00 1243 Regular Dislocation Networks in Silicon as a Tool for Novel Device Application M. Kittler (IHP microelectronics), M. Reiche (Max-Planck-Institut für Mikrostrukturphysik) and X. Yu (IHP microelectronics)
10:40 1244 Brother Silicon, Sister Germanium J. Vanhellemont (Ghent University) and E. R. Simoen (IMEC)
11:20 1245 Effect of Intrinsic Gettering on Semiconductor Device Performance in SOI Substrates A. Nevin (X-Fab UK Ltd) and A. Hoelke (X-Fab)
11:40 1246 New Silicon-Based Materials for Spintronics Prepared by High Temperature - Pressure Treatment of Si:Cr, Si:Mn and Si:V A. Misiuk, A. Barcz (Institute of Electron Technology), W. Osinniy, J. Bak0Misiuk (Institute of Physics), L. Chow (University of Central Florida) and B. Suma (Institute of Electron Technology)