210th ECS Meeting - Cancun, Mexico

October 29 - November 03, 2006

PROGRAM INFORMATION
 

F2 - Electronics Packaging 2

Electrodeposition
 

Thursday, November 2, 2006

Universal 19, 1st Floor, Expo Center

Solder Bump

Co-Chairs: T. Ritzdorf and V. M. Dubin
TimeAbs#Title and Authors
10:00 1634 C4NP-Next Generation Solder Bumping Technology P. A. Gruber, R. Budd, S. Buchwalter, D. Shih (IBM T.J. Watson Research Center), J. Busby, J. Garant, A. Giri, S. Knickerbocker, H. Longworth (IBM S&TG) and D. Naugle (IBM Systems & Technology Group)
10:40 1635 Formation of AuSn Bumps for 3D Chip Stacking by Electrodeposition B. Wu (Nexx Systems), A. Ruff (Cubic Wafer), J. Callahan (Cubic Wafer, Inc.), G. Hradil (Technic), A. Keigler, Z. Liu (Nexx Systems) and J. Trezza (Cubic Wafer)
11:00 1636 Wafer Level Package Using Au-Sn Eutectic Bonding and Ni/Au-Sn Plated Metal Wall Y. Kim, G. Jeong, J. Kim, S. Lim and S. Suh (Sungkyunkwan University)
11:20 1637 Effects of Mass Transfer and Current Density on High Rate Binary Alloy Plating M. L. Bernt, P. McHugh and G. Wilson (Semitool, Inc.)
11:40 1638 Monitoring of Lead-Free Tin Alloy Electrodeposition I. Tin/Silver E. Shalyt, M. Pavlov and P. Bratin (ECI Technology)
 
TimeAbs#Title and Authors
14:00 1639 The Advances of Electroless Ni/Pd/Au Metal Stack as UBM for Flip Chip Technology R. Preisser (Atotech Deutschland GmbH)
14:20 1640 The Structures of Sn Whiskers on Sn Electroless Deposited Films N. Okamoto, Y. Fujii (Osaka Prefecture University), H. Kurihara (Mitsui Mining and Smelting Co., LTD.) and K. Kondo (Osaka Prefecture University)
 

Three Dimensional Packaging and Advanced Packaging

Co-Chairs: B. Wu and P. A.Gruber
TimeAbs#Title and Authors
14:40 1641 Challenges and Opportunities of Electrodeposition in Advanced Packaging Y. Zhang (Cookson Electronics, Enthone, Inc)
15:20 Intermission (20 Minutes)
15:40 1642 Studies on Through-Chip Via Filling for Wafer-Level 3D Packaging D. Barkey (University of New Hampshire), J. Callahan (Cubic Wafer, Inc.), A. Keigler, Z. Liu (Nexx Systems), A. Ruff, J. Trezza (Cubic Wafer) and B. Wu (Nexx Systems)
16:00 1643 Bottom-up Copper Deposition in Deep Trenches by Selective Accelerator Removal M. Hayase (Tokyo University of Science - Faculty of Science and Technology - Department of Mechanical Engineering) and Y. Touke (Tokyo University of Science)
16:20 1644 High Rate Copper Filling Within High Aspect Ratio Through Silicon Vias for 3-D Chip Stacking C. D. Sharbono, B. Kim and T. Ritzdorf (Semitool Inc)
16:40 1645 Electrically Mediated Copper Electrodeposition for Interconnect Packaging and High Density Interconnect Printed Circuit Board Applications H. McCrabb, H. Garich and E. Taylor (Faraday Technology, Inc.)
17:00 1646 Development and Characterization of Plating Cell Geometry for PCB and Packaging Applications. H. Garich, L. Gebhart, E. Taylor, M. Inman and H. McCrabb (Faraday Technology, Inc.)
 

Friday, November 3, 2006

Universal 19, 1st Floor, Expo Center

Electronics Packaging

Co-Chairs: Y. Zhang and D. P. Barkey
TimeAbs#Title and Authors
08:00 1647 Advances in Plating for Sub-50 nm On-Chip Interconnects V. M. Dubin, R. N. Akolkar, C. Cheng, R. Chebiam, A. Fajardo and J. Plombon (Intel Corporation)
08:40 1648 Electroless Co-Based Self-Aligned Copper Capping Layers: Growth Mechanism, Microstructure and Barrier Properties S. Olivier (CEA), T. Decorps (ST Microelectronics) and P. Haumesser (CEA)
09:00 1649 New Heterostructures and 3D Devices Obtained at CEA/Leti by the Direct Bonding and Thinning Method L. Di Cioccio (CEA)
09:20 1650 Electrochemical Micromachining of Patterned Aluminum Films by Porous-type Anodization D. A. Brevnov (University of New Mexico)
 

Copper Damascene

Co-Chairs: D. P. Barkey and K. Kondo
TimeAbs#Title and Authors
09:40 Intermission (20 Minutes)
10:00 1651 A Comparison of Mercapto-Containing Accelerator Properties S. T. Mayer, T. Majid, E. Webb and M. Rea (Novellus Systems)
10:20 1652 A Microfluidic Device for Measuring Adsorption and Desorption Kinetics of Additives used in Direct Metallization Processes M. J. Willey and A. West (Columbia University)
10:40 1653 Acceleration Comples Formation with Current Wave Form by Rotating Ring Disk Electrode T. Nakamura, N. Okamoto and K. Kondo (Osaka Prefecture University)
11:00 1654 Voltammetric Study of the Adsorption and Inhibiting Effect of PEG and Cl- on Copper Deposition M. E. Huerta Garrido and M. Pritzker (University of Waterloo)
11:20 1655 The Advanced Monitoring of Constituents in Copper Damascene Electroplating Baths M. Pavlov, E. Shalyt and P. Bratin (ECI Technology)
11:40 1656 Modeling Copper Planarization Under Mass Transport Controlled Dissolution U. Landau, U. Landau (Case Western Reserve University) and E. Malyshev (L-Chem, Inc.)