214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION

 

D6 - Porous Semiconductors: A Symposium Held in Memory of Vitali Parhutik and Volker Lehmann

Corrosion/Luminescence and Display Materials

 

Monday, October 13, 2008

Sea Pearl 1; Mid-Pacific Conference Center, Hilton Hawaiian Village

Monday 2 - Morning

Co-Chair(s): Schmuki and Ogata
TimeAbs#Title and Authors
10:00   1779   Vitali Parkhutik - His Contributions to Porous Semiconductor Science andTtechnology Over 30 years L. Canham (Intrinsiq Materials ltd)
10:40   1780   Volker Lehmann: An Unconventional Scientist U. Gösele (Max-Planck Instiutute of Microstructure Physics) and H. Föll (Christian-Albrechts-University of Kiel)
11:10   1781   In-Situ Assessment of Macropore Growth in Low-Doped n-Type Silicon J. Carstensen, A. Cojocaru, M. Leisner and H. Föll (Christian-Albrechts-University of Kiel)
11:40   1782   A Three Pulse Electrochemical Regime as a Fabrication Platform for Nano-structured Multifunctional Silicon Based materials and Their Primary Prototypes E. Matveeva, Y. Makushok, L. Bichto and E. Pastor (Technical University of Valenia)
 

Monday 2 - Afternoon

Co-Chair(s): Goesele and Föll (Before Intermission) and Lockwood and Matveeva (After Intermission)
TimeAbs#Title and Authors
14:00   1783   Biological Sensing with Stratified Porous Silicon Nanostructures M. J. Sailor, M. Orosco (UC San Diego) and C. Pacholski (Max Planck Institute, Stuttgart)
14:20   1784   Multiplexed DNA Assay based on Electrochemically Etched Porous Silica Photonic Crystal Particles S. Meade, M. Y. Chen (University of California, San Diego) and M. J. Sailor (UC San Diego)
14:40   1785   Design and Fabrication of Extended-Bandwidth Rugate Filters Made of Porous Silicon N. Ishikura, M. Fujii, K. Nishida, S. Hayashi (Kobe University) and J. Diener (Technische Universität München)
15:00   1786   Deep Trench Etching in Macroporous Silicon - Application to Photonic Crystal Gas Sensors R. B. Wehrspohn, S. Schweizer, T. Geppert (University of Halle) and A. Lambrecht (Fraunhofer IPM)
15:20   1787   Synthesis and Catalytic Activity of Hybrid Metal/Silicon Nanocomposites S. Polisski, B. Goller, A. Lapkin and D. Kovalev (University of Bath)
15:40   1788   Gas Sensing Property of Porous SnO2 Fabricated by Anodic Oxidation J. Jeun (Material Science and engineering at Seoul National Univ.), H. Ryu (Seoul National University) and S. Hong (Material Science and engineering at Seoul National Univ.)
16:00 Intermission (20 Minutes)
16:20   1789   Silicon/metal Hybrid Nanosystem with Tailored Magnetic Properties in Two Characteristic Field Regions K. Rumpf, P. Granitzer (Karl Franzens University Graz), P. Poelt (University of Technology Graz) and H. Krenn (Karl Franzens University Graz)
16:40   1790   Porous Silicon/Fe3O4-Nanoparticle Composite and its Magnetic Behaviour P. Granitzer, K. Rumpf (Karl Franzens University Graz), A. Roca (CSIC Madid), P. Morales (CSIC Madrid) and P. Poelt (University of Technology Graz)
17:00   1791   Novel Morphology Dependent Ferromagnetic Behaviour of Mesoporous Silicon P. Granitzer, K. Rumpf (Karl Franzens University Graz) and P. Poelt (University of Technology Graz)
 

Tuesday, October 14, 2008

Sea Pearl 1; Mid-Pacific Conference Center, Hilton Hawaiian Village

Tuesday 3 - Morning Session

Co-Chair(s): Canham and Ozanam (Before Intermission) and Sailor and Hayase (After Intermission)
TimeAbs#Title and Authors
08:00   1792   Etching Deep Macropores in n-Type Silicon in Short Times E. Ossei-Wusu, A. Cojocaru, J. Carstensen, M. Leisner and H. Föll (Christian-Albrechts-University of Kiel)
08:20   1793   Formation Mechanism of Porous Silicon with Medium Pores: the Role of KMnO4 K. Fukami (Kyoto University), H. Kamakura (Institute of Advanced Energy, Kyoto University), T. Sakka and Y. H. Ogata (Kyoto University)
08:40   1794   In-Situ FFT Impedance Spectroscopy during the Growth of Crystallographically Oriented Pores in InP M. Leisner, J. Carstensen, A. Cojocaru and H. Föll (Christian-Albrechts-University of Kiel)
09:00   1795   Electric Field Effects on the Formation of Isolated Macro Porous Silicon L. Vanga, M. K. Oisten (Michigan Technological University), T. Ritzdorf (Semitool, Inc.) and P. L. Bergstrom (Michigan Technological University)
09:20   1796   Growth Modes of Macropores in n-Type Silicon A. Cojocaru, J. Carstensen and H. Föll (Christian-Albrechts-University of Kiel)
09:40 Intermission (20 Minutes)
10:00   1797   Model for Current Oscillations at the Si/Electrolyte Contact:Extension to Spatial Resolution J. Grzanna (Hahn-Meitner-Institut Berlin GmbH) and H. J. Lewerenz (Helmholtz-Zentrum Berlin für Materialien und Energie)
10:20   1798   OCP Oscillation of Si in HF Solution Containing Oxidizing Species Y. H. Ogata, T. Itoh, M. Chourou, K. Fukami and T. Sakka (Kyoto University)
10:40   1799   Are the Oscillations During the Anodic Dissolution of Si in Dilute Fluoride Electrolyte Damped or Sustained? J. Chazalviel and F. Ozanam (CNRS-Ecole Polytechnique)
11:00   1800   Enhanced Controllability of Periodic Silicon Nanostructures by Magnetic Field Anodization B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta and N. Koshida (Tokyo Univ. Agr.&Tech.)
11:20   1801   Electrolyte Exposure to Laser Light as an Effective Tool for the Control of Pore Size Distribution of PS Layers Fabricated from Heavily Doped Si Wafers C. Falamaki (Amirkabir University of Technology), J. Khajepour and M. Bahrevar (Materials and Energy Energy Research Center)
11:40   1802   Electrochemical Formation of Self-positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate D. Ge, J. Jiao, X. Bao, S. Zhang, Y. Wang (Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences) and S. Feng (Shanghai Institute of Microsystems and Information Technology)
 

Tuesday 3 - Afternoon Session

Co-Chair(s): Flake and Ono (Before Intermission) and Niwano and Lewerenz (After Intermission)
TimeAbs#Title and Authors
14:10   1803   In-Situ Infrared Spectroscopic Study of Electrochemical Etching Processes at Si Surfaces Y. Kimura and M. Niwano (Tohoku Univ.)
14:40   1804   Controlled Truncation of Si Pyramid Arrays Utilizing the Reaction Kinetics of Electrochemical Etching H. Seo, X. Li, H. Um and J. Lee (Hanyang University)
15:00   1805   Stabilization of Porous Silicon Free-Standing Coupled Microcavities by Surface Chemical Modification B. Gelloz, T. Ohta (Tokyo Univ. Agr.&Tech.), M. Ghulinyan (Fondazione Bruno Kessler), L. Pavesi (Nanoscience Laboratory), D. J. Lockwood (National Research Council of Canada) and N. Koshida (Tokyo Univ. Agr.&Tech.)
15:20   1806   Ellipsometric Porosimetry : Fast and Non Destructive Technique for Characterization of Porous Low-K ; Highlights on Plasma Damage and Water Effect on Treated Materials A. Bourgeois (SOPRA SA), A. Bondaz (SOPRA), L. Kitzinger (SOPRA, Inc.) and C. Defranoux (SOPRA SA)
15:40 Intermission (20 Minutes)
16:00   1807   Formation of Porous Noble Metal Layer by Displacement Reactions with Porous Silicon M. Hayase, T. Matsuzaka (Tokyo University of Science) and J. Brito-Neto (Universidade Federal do ABC)
16:20   1808   Integration and Applications of Electrochemically-Etched Silicon Nanowires W. Xu and J. C. Flake (Louisiana State University)
16:40   1809   Formation of Si Nanowire Arrays by Metal-Assisted Chemical Etching C. Benoit-Moez, S. Bastide (CNRS) and C. Levy-Clement (CNRS-ICMPE)
17:00   1810   Metal-Assisted Chemical Etching of Silicon: Preparation of Silicon Nanowire Arrays E. Galopin, K. Lemmens, G. Piret, Y. Coffinier, S. Szunerits (IRI - IEMN) and R. Boukherroub (Institut de Recherche Interdisciplinaire (IRI))
17:20   1811   GaAs Microarrays by Noble-Metal Assisted Chemical Etching Y. Yasukawa (Kogakuin University), H. Asoh and S. Ono (Kogakuin Univeristy)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Tuesday 3 Poster Session

Co-Chair(s): Diener and Fukami
TimeAbs#Title and Authors
o   1812   Inhomogeneous Anodization of Aluminum for Nanofabrication Y. Kimura, T. Muto, N. Shimakura and M. Niwano (Tohoku Univ.)
o   1813   In Situ Observation of Electrochemical Etching Process Using Infrared Spectroscopy and Its Monte Carlo etching Simulation N. Shimakura, Y. Kimura and M. Niwano (Tohoku Univ.)
o   1814   Dye-Sensitized TiO2 Nanotubes with Ag Nanoparticles Y. Shinkai, H. Tsuchiya and S. Fujimoto (Osaka University)
o   1815   Resonant Energy Transfer from Porous Silicon to Iodine Molecules T. Nakamura, T. Ogawa, T. Kubota, S. Adachi (Gunma University) and M. Fujii (Kobe University)
o   1816   Macropore Formation in p-type Silicon and Si/SiGe/Si/SiGe/p-type Silicon J. Kim (Daegu Gyeongbuk Institute of Science and Technology), H. Sub (Hanyang University), K. Kim (Daegu Gyeongbuk Institute of Science and Technology) and J. Lee (Hanyang University)
o   1817   Electrical Transport and Dielectric Impedance of Au/porous Silicon Thin Films Structures F. Fonthal Rico, M. Chavarria (Universidad Autonoma de Occidente) and A. Rodriguez (Universitat Politecnica de Catalunya)
o   1818   High Catalytic Activity of Palladium for Metal Enhanced Hydrofluoric Acid Etching of Silicon S. Yae, M. Tshiro (University of Hyogo), T. Hirano (Graduate School of Engineering, University of Hyogo), M. Abe (University of Hyogo), N. Fukumuro and H. Matsuda (Graduate School of Engineering, University of Hyogo)
o   1819   Photoluminescence and Electrical Properties Study of Porous Silicon Layer Prepared by Electrochemical Etching F. Fonthal (Universidad Autonoma de Occidente), C. E. Goyes (Pontificia Universidad Javeriana), M. De los Rios (Universidad del Quindío, Laboratorio de Optoelectrónica), G. Fonthal and L. Tirado Mejía (Universidad del Quindio)
o   1820   Macropore Formation in a Prepatterned p-type Silicon J. Kim, K. Kim (Daegu Gyeongbuk Institute of Science and Technology), H. Suh and J. Lee (Hanyang University)
o   1821   Possibility of use of Nanostructured Silicon in Biosensor Controls T. Kachinskaya (Kiev National Technical University of Ukraine), M. Melnichenko (Taras Shevchenko Kyiv National University), M. Starodub (Palladin Institute of Biochemistry of NASU), O. Shmyryeva (Kiev National Technical University of Ukraine) and E. Yurevich (Taras Shevchenko Kyiv National University)
o   1822   The Effect of N2 in Vapor Detectors Based on Porous Silicon Layers E. Rucavado, J. Badilla and A. Ramirez-Porras (Universidad de Costa Rica)
 

Wednesday, October 15, 2008

Sea Pearl 1; Mid-Pacific Conference Center, Hilton Hawaiian Village

Wednesday 4 - Morning

Co-Chair(s): Hebert and Boukherroub (Before Intermission) and Boarino and Koshida (After Intermission)
TimeAbs#Title and Authors
08:10   1823   Porous Multilayers as a Dielectric Host for Photons Manipulation L. Pavesi (Nanoscience Laboratory)
08:40   1824   Stain Etching with Ferric Ion to Produce Thick Porous Silicon Films M. Dudley and K. W. Kolasinski (West Chester University)
09:00   1825   Electrical Properties of Meso-Porous Silicon: From a Surface Effect to Coulomb Blockade and More L. Boarino (Istituto Nazionale di Ricerca Metrologica), S. Borini and G. Amato (INRiM)
09:20   1826   Photoexcited Silicon Nanocrystals as Multifunctional Spin-Flip Activator B. Goller, S. Polisski and D. Kovalev (University of Bath)
09:40 Intermission (20 Minutes)
10:00   1827   Coupled Electrical Migration and Stress-Driven Transport in Porous Anodic Alumina Films J. Houser and K. Hebert (Iowa State University)
10:20   1828   Growth of Porous Anodic Films on Niobium in Hot Phosphate-Glycerol Electrolyte Y. Oikawa, K. Fushimi, Y. Aoki and H. Habazaki (Hokkaido University)
10:40   1829   Fabrication of Self-Organized Nanoporous Oxide Semiconductors by Anodization S. Ono, R. Kobayashi, Y. Kobayashi and H. Asoh (Kogakuin Univeristy)
11:00   1830   Anodic Porous and Tubular Oxide Layers on Ti Alloys H. Tsuchiya (Osaka University), J. Nakata (Osaka Unviersity), S. Fujimoto (Osaka University), S. Berger (Unviersity of Erlangen-Nuremberg) and P. Schmuki (University of Erlangen-Nuremberg)
11:20   1831   Self-Organized Titanium Oxide Nanotube-Layers: Application in Dye Sensitized Solar Cells P. Schmuki (University of Erlangen-Nuremberg)
11:40   1832   Efficient Solar Cell Structure Prepared by Electrodeposition into Oscillation-Induced Nanoporous Silicon Oxide H. J. Lewerenz (Helmholtz-Zentrum Berlin für Materialien und Energie), K. Skorupska, T. Stempel (Hahn-Meitner-Institut Berlin), M. Aggour (Hahn-Meitner-Insititut Berlin) and A. Munoz (Hahn-Meitner-Institut Berlin)
 

Wednesday 4 - Afternoon

Co-Chair(s): Kovalev and Kolasinski
TimeAbs#Title and Authors
14:00   1833   Pore Propagation in n-InP Anodized in KOH R. Lynch (Materials and Surface Science Institute, University of Limerick), C. O'Dwyer (Materials and Surface Science Institute), N. Quill (University of Limerick), D. Sutton (Limerick Institute of Technology), S. Newcomb (Glebe Scientific Ltd.) and D. Buckley (University of Limerick)
14:20   1834   Complete Removal of Irregular Top Layer for Sensor Applications of InP Porous Nanostructures T. Sato, A. Mizohata, N. Yoshizawa and T. Hashizume (Hokkaido University)
14:40   1835   Comments About the Mechanism of Porous Layer Growth: Case of InP L. Santinacci, I. Gérard, M. Bouttemy (Institut Lavoisier CNRS) and A. Etcheberry (Institut Lavoisier UMR 8180 CNRS)
15:00   1836   Growth of a Porous Layer on InP in Liquid Ammonia: A Specific Interfacial Behavior A. Eb, A. Gonçalves, C. Mathieu and A. Etcheberry (Institut Lavoisier UMR 8180 CNRS)
15:20 Concluding Remarks (10 Minutes)