214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E1 - Solid State Divisions General Session

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 13, 2008

Room 308A, Level 3, Hawaii Convention Center

CMOS and Beyond -I

Co-Chair(s): R. M. Todi and K. B. Sundaram
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10   1837   High Performance CMOS Technology Beyond 45nm P. Agnello (IBM Microelectronics)
10:50   1838   BOI (Body-on-Insulator) FinFETs on Bulk Si Wafers: Simulation and Fabrication R. Wang, X. Xu, J. Zhuge, G. Chen and R. Huang (Peking University)
11:10   1839   Electronic Structure Analysis of Silicon Nanowires for High Conductivity in n- and p-channel Nanowire-FET Y. Lee (Tokyo Institute of Technology), T. Nagata (University of Tsukuba), K. Kakushima (Tokyo Institute of Technology), K. Shiraishi (University of Tsukuba) and H. Iwai (Tokyo Institute of Technology)
11:30   1840   Hole Mobility in Si(110) p-MOS Transistors P. Gaubert, A. Teramoto and T. Ohmi (New Industry Creation Hatchery Center, Tohoku University)
11:50 Discussion (10 Minutes)
 

Materials Processing and Characterization

Co-Chair(s): R. M. Todi and H. Iwai
TimeAbs#Title and Authors
14:00   1841   High Temperature Sensors Based on SiCBN Thin Films A. Vijayakumar (Univ. of Central Florida), K. B. Sundaram (University of Central Florida) and R. Todi (Univ. of Central Florida)
14:30   1842   Raman Spectroscopy Study of Silicon Strain in Shallow Trench Isolation N. Klymko (IBM Advanced Semiconductor Research and Development Center, Hopwell Junction, New York 12203 USA), M. Belyansky, R. Conti and F. Liu (IBM Semiconductor R&D Center)
14:50   1843   Measurement of the Mechanical Stability of Semiconductor Line Structures in Relevant Media D. Peter (SEZ AG), M. Dalmer, H. Kruwinus (SEZ a division of Lam Research), A. Lechner (University of Applied Sciences), L. Archer, E. Gaulhofer (SEZ a division of Lam Research), A. Gigler, R. Stark (Department of Earth and Environmental Sciences) and W. Bensch (Christian-Albrechts-University)
15:10   1844   Characterization of Residual Implant Damage by Generation time and Surface Photovoltage Techniques Y. Jee, C. Kim, C. Jun, T. Kim (Samsung Electronics Co.), A. Belyaev and D. Marinskiy (Semiconductor Diagnostics, Inc.)
15:30 Intermission (10 Minutes)
15:40   1845   Unexpected Spacial Distribution of Defect States induced by an Atom Vacancy on TiO2(110) Surface T. Minato (Tohoku University), J. Zhao (Universtiy of Pittburgh), Y. Sainoo (Tohoku Univ.), Y. Kim, S. Kato (RIKEN), K. Aika (TIT), J. Yang (Univ. Sci. and Tech. of China), H. Petek (Universtiy of Pittburgh) and M. Kawai (The University of Tokyo)
16:00   1846   Three-Step Room Temperature Cleaning of Bare Silicon Surface for Radical Based Semiconductor Manufacturing R. Hasebe (STELLA CHEMIFA Corporation), A. Teramoto (New Industry Creation Hatchery Center, Tohoku University), R. Kuroda, T. Suwa, S. Sugawa (Tohoku University) and T. Ohmi (New Industry Creation Hatchery Center, Tohoku University)
16:20   1847   New Elastomeric Seal Materials Address Stringent ALD Requirements G. Foggiato, W. Alexander (Greene Tweed, Co) and T. Noguchi (Daikin Industries)
16:40   1848   Innovative Molecular Bonding in Newly Developed Elastomer Materials Enhances Outgassing, Permeability and High Temperature Performance T. Noguchi, T. Morikawa, J. Terada, Y. Ando (Daikin Industries) and G. Foggiato (Greene Tweed, Co)
 

Tuesday, October 14, 2008

Room 308A, Level 3, Hawaii Convention Center

CMOS and Beyond -II

Co-Chair(s): K. B. Sundaram and X. Wang
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05   1849   High Performance 45nm SOI Embedded DRAM: an Integration Perspective R. Todi (Semiconductor Research and Developement Center)
10:35   1850   Analysis of Threshold Voltage Variations of FinFETs Relating to Short Channel Effects Y. Kobayashi (Tokyo Institute of Technology), A. Sachid (Indian Institute of Technology), K. Tsutsui, K. Kakushima, P. Ahmet (Tokyo Institute of Technology), V. Rao (Indian Institute of Technology) and H. Iwai (Tokyo Institute of Technology)
10:55   1851   Schottky Barrier Height Modulation by Er Insertion and Its Application to SB-MOSFETs K. Noguchi, W. Hosoda, K. Matano, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii (Tokyo Institute of Technology), A. Chandorkar (I.I.T.Bombay), T. Hattori and H. Iwai (Tokyo Institute of Technology)
11:15   1852   Micro and Nano R&D Performance and Productivity R. J. Olson, W. Hawkins, P. Piacente, R. Frank, L. Douglas and G. Trant (GE Global Research)
11:35   1853   Enhancing Solar Cell Performance Through New Materials for Manufacturing Equipment G. Foggiato, W. Alexander (Greene Tweed, Co) and T. Noguchi (Daikin Industries)
11:55 Session Concluding Remarks (5 Minutes)
 

Nano Scale Materials and Applications

Co-Chair(s): R. Todi and X. Wang
TimeAbs#Title and Authors
14:00 Introductory Remarks (5 Minutes)
14:05   1854   Tungsten Oxide Nanorods: Synthesis and Properties S. Albin, B. Xiao, M. Thitsa and P. Boland (Old Dominion University)
14:35   1855   Epitaxial VO2 Thin Films And Nanoparticles For Nonlinear Optical Studies J. Nag and R. Haglund (Vanderbilt University)
14:55   1856   Photo-Curable Polymer/Silica nanocomposite for Passivation of Organic Light-Emitting Diodes (OLEDs) H. Shin, S. Choi, B. Han, K. Kim, J. Yoo and C. Kim (Chungang University)
15:15   1857   Time-Domain Ab Initio Studies of Excitation Dynamics in Semiconductor Quantum Dots O. Prezhdo (University of Washington)
15:35   1858   Non-lithographic Fabrication of Nano-pore Arrays on GaAs without AAO Membrane Transfer N. Xiang, K. Heng, J. Loo and H. Hao (National University of Singapore)
15:55 Concluding Remarks (5 Minutes)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Solid State General Poster Session

Co-Chair(s): R. M. Todi and K. B. Sundaram
TimeAbs#Title and Authors
o   1859   The Novel Highly-Selective Etching Process of SiO2 to TiSix for Nano-Scale Device Fabrication D. Hwang, K. Kim, H. Yi, Y. Lee and S. Chae (samsung electronics)
o   1860   Interfacial Effects of Polymeric Gate Insulators on Device Performances of Organic-Thin-Film Transistors J. Bae, W. Kim, M. Kim, C. Keum and S. Lee (Seoul National University)
o   1861   Performance evaluation of 8-cell stacked Planar Type Solid Oxide Fuel Cell N. Cho, S. Hwang, S. Han (RIST (Research Institute of Industrial Science and Technology)) and Y. Kim (RIST)
o   1862   Impurity Amplification in Ultra High Purity Hydrogen Bromide by Water Catalyzed Reactions from Different Cylinder Materials A. Seymour, R. Torres, C. Wyse, J. Yao, M. Raynor, T. Evdokimova, R. Pemberton (Matheson Tri-Gas), J. Lee and W. Jung (Samsung Electronics Co., Ltd.)
o   1863   A Novel Fermi Level Controlled High Voltage Transistor Preventing B. Park, S. Lee (SamSung Institute of Technology(SSIT)), D. Chang, K. Bang, S. Kim, S. Yi and E. Jung (Samsung Electronics co.)
o   1864   Anode Modification of Anode Support-type Solid Oxide Fuel Cell Y. Park, D. Kim and J. Jun (RIST)
o   1865   Multiple Defect Modes in Diamond Photonic Crystal M. Thitsa and S. Albin (Old Dominion University)
o   1866   Electrochemical Evaluation and Finite Element Structural Analysis of Si Wafer Surface Under Mechanical Stress K. Sakata and T. Homma (Waseda University)
o   1867   Investigation of THz Emission by p-GaAsSb S. Hargreaves, L. Bignell, R. Lewis (University of Wollongong), D. Schoenherr, M. Saglam and H. Hartnagel (Technical University of Darmstadt)
o   1868   Improved High Temperature Characteristics in Accumulation-mode Fully Depleted SOI MOSFETs on Si(100) and (110) Surfaces W. Cheng (Tohoku University), A. Teramoto and T. Ohmi (New Industry Creation Hatchery Center, Tohoku University)
o   1869   Coupling and Short ChannelEeffect with Gate-Drain Distance and Gate Lengths in Triple-Gate MOSFETs Based on Silicon-on-Insulator (SOI) Substrate K. Na (Kyungpook National University), S. Cristoloveanu (IMEP INPG-Minatec), Y. Bae (Division of Electronics Engineering, Uiduk University), P. Patruno (SOITEC), W. Xiong (Texas Instruments) and J. Lee (Electrical Eng. and Computer Sci., Kyungpook National University)
o   1870   Effects of Organic Additives in Electroplated Cu Thin Films J. Seo, Y. Song, Y. Lee (Hanbat National University), Y. Ryu, K. Hong (Chungnam National University) and S. Rha (Hanbat National University)
o   1871   Preparation and Characterization of Nanocomposite Oxide Films Formed by Anodizing of Aluminum Foils Coated with Bi4Ti3O12 X. Du (Electronic and Information Engineering), Y. Xu (Xi'an Jiaotong University), L. Xiong (Electronic and Information Engineering) and J. Wang (Xi'an Jiaotong University)
o   1872   Ruthenium Precursor with Increased Reactivity S. Pic and J. Gatineau (Air Liquide Laboratories)
o   1873   Kinetics of Thermally Activated Photoresist Ashing on 300-mm Wafers D. Mezerette, K. Tanimura and G. K. Vinogradov (FOI Corporation)
o   1874   Control of the Crystal Phase in Fe/Si Films by Using Thin Film Zone Melting Crystallization T. Inoue, T. Shinsuke and M. Ihara (Tokyo Institute of Technology)
o   1875   Temperature-Dependent PL Intensity in FLA-Synthesized and Hydrogen-Modified Silica Layers with Silicon Nanocrystals V. Volodin, V. Stuchinsky, S. Cherkova, G. Kachurin and R. Yankov (Institute of Semiconductor Physics SD RAS)
o   1876   Ba/Ag Cathodes and Built-in Potentials in Transparent Organic Light-Emitting Diodes J. Lim and G. Yeom (Sungkyunkwan University)