214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E11 - Semiconductor Wafer Bonding 10: Science, Technology, and Applications

Electronics and Photonics
 

Tuesday, October 14, 2008

Room 306A, Level 3, Hawaii Convention Center

3D Integration, Packaging and MEMS/Photonic Device (I)

Co-Chair(s): T. Suga (Univ. Tokyo)
TimeAbs#Title and Authors
08:30 Introductory Remarks (10 Minutes)
08:40   2165   Bonding for 3-D Integration of Heterogeneous Technologies and Materials D. Temple (RTI International)
09:10   2166   Importance of Wafer Bonding for the Future Hyper-Miniaturized CMOS Devices K. Okamoto (Osaka Univ.)
 

3D Integration, Packaging and MEMS/Photonic Device (II)

Co-Chair(s): D. Temple (RTI)
TimeAbs#Title and Authors
10:00   2167   Copper Direct Bonding Characterization and its Interests for 3D Integration Circuits P. Gueguen, L. Di Cioccio (CEA-Leti MINATEC), F. Rieutord (CEA-DSM/INAC), P. Gergaud, J. Barnes (CEA-Leti MINATEC), M. Rivoire, D. Scevola (STMicroelectronics), M. Zussy, A. Charvet, L. Bally, D. Lafond and L. Clavelier (CEA-Leti MINATEC)
10:20   2168   Smart Bumpless Bonding for MEMS - IC Vertical Integration M. Shiozaki, M. Moriguchi, S. Sasaki and M. Oba (OMRON Corporation)
10:40   2169   Stiction-Free Hermetic Capping of MEMS Devices Using Wafer Level Seal-Glass Bonding in a Hydrogenated Environment M. S. Bhagavat, F. Sammoura, A. Sparks, E. Tarvin, J. Martin and K. Yang (Analog Devices Inc.)
11:00   2170   Outgassing Characterization for Process Optimization of High Vacuum Wafer Level Packaging W. Reinert and D. Kaehler (Fraunhofer ISIT)
11:20   2171   3D Stacking of Multiple Silicon Plates using Direct Wafer Bonding R. Gunther, M. Ackermann and M. Collon (cosine Research BV)
11:40   2172   Silicon Wafer Bonding for Use in Fuel Cells S. Petrovic (Arizona State University)
 

SOI Device and Applications

Co-Chair(s): H. Baumgart (Old Dominion Univ.)
TimeAbs#Title and Authors
14:00   2173   Fabrication and Characterization of Passivated HR SOI Wafers for RF Applications D. C. Lederer (Farran Technology Ltd), C. Roda Neve and J. Raskin (Universite catholique de Louvain)
14:30   2174   Plasma-Display-Panel Drivers as a Volume Application of Thick SOI Technology T. Fujihira, H. Sumida, K. Kumada and T. Nomiyama (Fuji Electric Device Technology Co., Ltd.)
15:00   2175   Tuning the Electrostatic Properties of Silicon-on-Insulating Multilayer (SOIM) Structures M. Kostrzewa (CEA-Leti MINATEC), T. Nguyen (IMEP, INPG-Minatec), J. Mazellier, C. Deguet, L. Clavelier (CEA-Leti MINATEC), K. Landry (Soitec S.A.) and S. Cristoloveanu (IMEP INPG-Minatec)
15:20   2176   Thick Bonded Silicon-On-Insulator Wafer with Polysilicon Interlayer for Gettering of Metal Impurities J. Hintsala (Okmetic Oyj), J. Mäkinen (Okmetic), S. Whiston, P. Daly, K. Nunan and W. Sawyer (Analog Devices Inc.)
15:40   2177   Partial SOI Structure by Wafer Direct Bonding through Amorphous Layer H. Himi and S. Fujino (DENSO CORPORATION)
 

Short Verbal Presentations for Posters

Co-Chair(s): H. Takagi (AIST)
TimeAbs#Title and Authors
16:20 Short Verbal Presentations for Posters. (90 Minutes)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session

TimeAbs#Title and Authors
o   2178   Aspects of Bonding Processed CMOS Wafers R. Knechtel (X-FAB Semiconductor Foundries AG)
o   2179   Enabling 3D Monolithic Integration P. Batude, M. Vinet, L. Clavelier, A. Pouydebasque, C. LeRoyer, C. Tabone, B. Previtali, L. Sanchez, L. Baud, A. Roman, V. Carron, F. Nemouchi, S. Pocas, C. Comboroure, F. Aussenac and S. Deleonibus (CEA-Leti MINATEC)
o   2180   Bump-less Wafer Level Bonding Experiment for Vertical Integration MEMS Device M. Moriguchi, M. Shiozaki, S. Sasaki and M. Oba (OMRON Corporation)
o   2181   Suspended Si Microstructures with Rounded Concave and Sharp Convex Corners Using Wafer Bonding and Wet Anisotropic Etching P. Pal, K. Sato and M. Shikida (Nagoya University)
o   2182   Effect of Process Variables on Glass Frit Wafer Bonding in MEMS Wafer Level Packaging J. Maloney, S. Sridharan, R. Gardner, K. Mason (Ferro Corporation), V. Dragoi, G. Mittendorfer (EV Group), E. Pabo and E. Cakmak (EV Group Inc.)
o   2183   Permanent Bonding with Polymers S. Farrens, S. Sood and H. Ishida (SUSS MicroTec)
o   2184   Multilayer Au-Si Eutectic Wafer Bonding with Microstructured Sealing Rings S. Lani, A. Bosseboeuf, O. Garel, F. Parrain, D. Bouville and X. Le Roux (Institut d'Electronique Fondamentale)
o   2185   UV-Activated Bonding Between Magnetic Garnet and Si for Optical Isolator with Si Guiding Layer H. Yokoi (Shibaura Institute of Technology)
o   2186   Bonding of Multiple Wafers for High Throughput LED Production S. Sood and A. Wong (SUSS MicroTec)
o   2187   Method of Strengthening Safe Operating Area for SOI Lateral Insulated Gate Bipolar Transistor T. Mizushima and D. H. Lu (Electron Device Laboratory)
o   2188   A Standard Method for Measuring Wafer Bond Strength for MEMS Applications R. A. Allen, J. Marshall (NIST), W. Baylies (BayTech), D. Read, G. Quinn, F. Delrio (NIST), K. T. Turner (University of Wisconsin), M. Bernasch (Fraunhofer Institute for Mechanics of Materials) and J. Baghdan (Fraunhofer Center for Silicon Photovoltaics)
o   2189   Direct Bonding of Oxidized Cavity Wafers M. O. Palokangas (Okmetic Oyj), J. Dekker, K. Henttinen (VTT) and J. Mäkinen (Okmetic)
o   2190   The Concealed Blister Test: An Implementable Test Method for a Non-destructive Strength-characterization of Full-wafer-Bonds M. Rabold, D. Busch, S. Ramachandran, F. Goldschmidtböing and P. Woias (University of Freiburg - IMTEK)
o   2191   MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Si L. Yu, J. Lu (North Carolina State University), M. Wagener (Nelson Mandela Metropolitan University), X. Yu and G. Rozgonyi (North Carolina State University)
o   2192   Impact of Thermal Processing on Silicon Wafer Surface Roughness L. W. Shive and B. L. Gilmore (MEMC Electronic Materials, Inc.)
o   2193   Germanium Bonding to AL2O3 P. T. Baine, H. Gamble, B. Armstrong, S. N. Mitchell, D. McNeill, P. Rainey, Y. Low and M. Bain (Queen's University Belfast)
o   2194   Determination of the mechanism of SiN-based wafer bonding using Differential-Based Enhanced Fourier Transforms of X-ray Reflectivity Data K. Nadkarnu (UCLA), B. Poust (Northrop-Grumman Space Technology) and M. Goorsky (UCLA)
o   2195   Plasma Activation for Low Temperature Wafer Bonding V. Dragoi (EV Group), T. Plach (Institute for Semiconductor and Solid State Physics, Johannes Keppler University Linz), F. Murauer (EV Group) and K. Hingerl (Institute for Semiconductor and Solid State Physics, Johannes Keppler University Linz)
o   2196   Laser Transmission Bonding of Silicon-to-Silicon and Silicon-to-Glass for Wafer Level Packaging and Microsystems F. Sari (Fraunhofer Institute for Laser Technology (ILT)), M. Wiemer (Fraunhofer Research Institution for Electronic Nanosystems), M. Bernasch (Fraunhofer Institute for Mechanics of Materials) and J. Bagdahn (Fraunhofer Center for Silicon Photovoltaics (CSP))
o   2197   Creating Thin-Film Silicon on Flexible Substrates using Adhesive Bonding and Wet Etching S. Song, S. L. Holl, C. Colinge (California State University, Sacramento), K. D. Hobart and F. Kub (Naval Research Laboratory)
o   2198   Chemical Mechanical Polishing of Exfoliated III-V Layers S. Hayashi, M. Joshi and M. Goorsky (UCLA)
o   2199   Interface Morphology and Electrical Property of Bonded GaAs/Si Wafers C. Hsieh and Y. Wu (National Chiao Tung university)
o   2200   Effect of Wafer Bonding and Layer splitting on Nanomechanical Properties of standard and strained SOI Films K. Tapily, H. Baumgart, D. Gu, A. Elmustafa (Old Dominion University), M. Krause and M. Petzold (Fraunhofer Institute for Mechanics of Materials)
 

Wednesday, October 15, 2008

Room 306A, Level 3, Hawaii Convention Center

Mechanics and Characterization

Co-Chair(s): J. Bagdahn (Fraunhofer IMM)
TimeAbs#Title and Authors
08:20   2201   Characterization and Qualification of Wafer-Bonded MEMS Devices R. Knechtel (X-FAB Semiconductor Foundries AG)
08:40   2202   Acoustic Characterization of Bonded Wafers S. Sood (SUSS MicroTec), T. Adams and R. Thomas (Sonoscan)
09:00   2203   Capacitance Transient study of the Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer J. Lu, Y. Park, X. Yu and G. Rozgonyi (North Carolina State University)
09:20   2204   Mechanical Characterization and Micro Structure Diagnostics of Glass Frit Bonded Interfaces B. Boettge, C. Dresbach, A. Graff, M. Petzold (Fraunhofer Institute for Mechanics of Materials) and J. Bagdahn (Fraunhofer Center for Silicon Photovoltaics (CSP))
 

Fundamentals: Physics and Chemistry

Co-Chair(s): D. Lederer (Farran Technology)
TimeAbs#Title and Authors
10:00   2205   Fundamentals of Wafer Bonding for SOI: From Physical Mechanisms Towards Advanced Modeling I. Radu, A. Boussagol, A. Barthelemy and S. Vincent (SOITEC)
10:30   2206   Effect of Pre-bonding Thermal Treatment on the Bonding Interface Evolution in Direct Si-Si Hydrophilic Wafer Bonding C. Ventosa (CEA Leti-Minatec), F. Rieutord (CEA-DSM/INAC), L. Libralesso, F. Fournel, C. Morales and H. Moriceau (CEA Leti-Minatec)
10:50   2207   Kinetics of Silanol Condensation for Low-Temperature Direct Bonding M. Eichler (Fraunhofer Institute for Surface Engineering and Thin Films), B. Michel (Technical University of Braunschweig), M. Thomas and C. Klages (Fraunhofer Institute for Surface Engineering and Thin Films)
11:10   2208   Oxide Free Silicon to Silicon Carbide Heterobond L. Li, &. Vallin, J. Lu, U. Smith, H. Norström and J. Olsson (Uppsala University)
11:30   2209   Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology D. Gu, H. Baumgart (Old Dominion University), K. Bourdelle, G. K. Celler (SOITEC) and A. Elmustafa (Old Dominion University)
 

Low-temperature Bonding Processes and Bonding Equipment (I)

Co-Chair(s): M. S. Goorsky (UCLA)
TimeAbs#Title and Authors
14:00   2210   Low Temperature Wafer Bonding F. Fournel, H. Moriceau, C. Ventosa, L. Libralesso, Y. Le Tiec (CEA Leti-Minatec) and F. Rieutord (CEA-DSM/INAC)
14:30   2211   Low Temperture Au-Au Thermal Compression Bonding of Thermally Mismatched Substrates S. Farrens and S. Sood (SUSS MicroTec)
14:50   2212   Low Temperature Wafer Bonding: Plasma Assisted Silicon Direct Bonding vs. Silicon-Gold Eutectic Bonding M. Rabold, H. Kuster, F. Goldschmidtböing and P. Woias (University of Freiburg - IMTEK)
15:10   2213   Low Temperature Wafer Bonding using In-Situ Radical Activation T. Rogers and N. Aitken (Applied Microengineering Ltd)
 

Low-temperature Bonding Processes and Bonding Equipment (II)

Co-Chair(s): H. Moriceau (CEA Leti-Minatec)
TimeAbs#Title and Authors
15:50   2214   Hybrid Bonding (Plasma activation and Anodic bonding) for Vacuum sealing A. Yamauchi (Bondtech Co., Ltd.), J. Kagami (Shinko-seiki Co., Ltd.), H. Okada (CREST, AIST) and T. Suga (The University of Tokyo)
16:10   2215   Double Barrier Si-based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding T. Lee, H. Floresca (University of Texas at Dallas), S. Kang (LG Siltron) and M. J. Kim (University of Texas at Dallas)
16:30   2216   Room-Temperature Bonding of Oxide Wafers by Ar-beam Surface Activation H. Takagi (National Institute of Advanced Industrial Science and Technology, AIST), J. Utsumi (Mitsubishi Heavy Industries Ltd.), M. Takahashi and R. Maeda (National Institute of Advanced Industrial Science and Technology (AIST))
16:50   2217   High-Precision Alignment for Low Temperature Wafer Bonding C. Wang, S. Taniyama, Y. Wang and T. Suga (The University of Tokyo)
 

Thursday, October 16, 2008

Room 306A, Level 3, Hawaii Convention Center

III-V Wafer Bonding and Layer Transfer (I)

Co-Chair(s): C. Colinge (Tyndall National Institute)
TimeAbs#Title and Authors
08:20   2218   Integration of Compound Semiconductor Devices and CMOS (CoSMOS) with Die to Wafer Bonding P. R. Patterson and K. Elliot (hrl, laboratories)
08:50   2219   Engineering Substrates for 3D Integration of III-V and CMOS K. J. Herrick (Raytheon)
09:20   2220   150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits D. Liang, A. Fang (University of California, Santa Barbara), D. Oakley, A. Napoleone, D. Chapman, C. Chen, P. Juodawlkis (Lincoln Laboratory, Massachusetts Institute of Technology), O. Raday (Intel Corporation) and J. E. Bowers (University of California, Santa Barbara)
 

III-V Wafer Bonding and Layer Transfer (II)

Co-Chair(s): K. D. Hobart (Naval Research Lab.)
TimeAbs#Title and Authors
10:00   2221   3D Wafer-Scale Integration for RF and Digital Applications P. Chang-Chien (Northrop Grumman), A. Gutierrez-Aitken (NGST), K. Hennig (Northrop Grumman), D. Scott, J. Zhou (NGST), P. Nam (Northrop Grumman Space Technology), C. Geiger, M. Parlee, B. Poust and R. Sandhu (NGST)
10:30   2222   III-V and III-Nitride Engineered Heterostructures: Wafer Bonding, Ion Slicing, and More O. Moutanabbir, S. Christiansen (Max Planck Institute of Microstructure Physics) and U. Gösele (Max-Planck Instiutute of Microstructure Physics)
11:00   2223   Cleavage Engineered Layer Transfer using Porous Silicon M. Joshi, S. Hayashi and M. Goorsky (UCLA)
11:20   2224   Bonding of Elastically Strain-Relaxed GaAs/InGaAs/GaAs Heterostructures to GaAs(001) D. Owen, D. Lackner, O. Pitts, S. Watkins and P. Mooney (Simon Fraser University)
11:40   2225   High Density Integration of Single Crystal Thin Film Devices by "Epifilm Bonding" Technology M. Ogihara, H. Fujiwara, M. Mutoh, T. Suzuki, T. Sagimori, T. Igari, H. Furuta, Y. Nakai and M. Sakuta (Oki Digital Imaging Corporation)
 

Strained Si

Co-Chair(s): I. Radu (SOITEC)
TimeAbs#Title and Authors
14:00   2226   Strained Silicon on Wafer Level by Waferbonding: Materials Processing, Strain Measurements and Strain Relaxation S. H. Christiansen, M. Reiche (Max-Planck Instiutute of Microstructure Physics), M. Becker (IPHT), C. Himchinschi (Chemnitz University of Technology) and U. Gösele (Max-Planck Instiutute of Microstructure Physics)
14:30   2227   Fabricating Strained Silicon Substrates using Mechanical Deformation during Wafer Bonding K. T. Turner (University of Wisconsin)
14:50   2228   Strain Relaxation in Patterned Strained Si-on- Insulator (sSOI) by Raman Spectroscopy D. Gu, H. Baumgart (Old Dominion University), M. Zhu (The College of William and Mary) and G. K. Celler (SOITEC)
 

3D Integration, Packaging and MEMS/Photonic Device (III)

Co-Chair(s): F. Fournel (CEA Leti-Minatec)
TimeAbs#Title and Authors
15:30   2229   Developments Trends in the Field of Wafer Bonding Technologies M. Wiemer (Fraunhofer Research Institution for Electronic Nanosystems), J. Frömel (Fraunhofer IZM), C. Jia and T. Gessner (Chemnitz University of Technology)
16:00   2230   Low Temperature Bonding for Optical Microsystems Applications E. Higurashi (The University of Tokyo)
16:30   2231   Microring Resonators Fabrication by BCB Adhesive Wafer Bonding V. Dragoi (EV Group), M. Alexe (Max Planck of Microstructures Physics), M. Hamacher and H. Heidrich (Fraunhofer Institute for Telecommunications)
16:50   2232   Clean and Conductive Wafer Bonding for MEMS C. H. Yun (Analog Devices Inc)
 

Award Ceremony

Co-Chair(s): T. Suga (Univ. Tokyo)
TimeAbs#Title and Authors
17:10 Award Ceremony (20 Minutes)
 

Concluding Remarks

Co-Chair(s): C. Colinge (Tyndall National Institute)
TimeAbs#Title and Authors
17:30 Symposium Concluding Remarks (10 Minutes)