214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E12 - State-of-the-Art Program on Compound Semiconductors 49 (SOTAPOCS 49)

Electronics and Photonics
 

Monday, October 13, 2008

Room 307B, Level 3, Hawaii Convention Center

Compound Semiconductor Processes Technology

Co-Chair(s): M. Overberg and J. Kim
TimeAbs#Title and Authors
10:00   2233   Growth, Fabrication and Characterization of High-Speed 1550-nm S-SEEDs for All-Optical Logic G. Keeler, D. Serkland, M. Overberg, J. Klem, K. Geib, J. Clevenger, A. Hsu and G. Hadley (Sandia National Laboratories)
10:30   2234   High Density Copper Bump Technology Integrated With Wafer Level Package X. Zeng, P. Chang-Chien, C. Cheung, R. Johnson and K. Hennig (Northrop Grumman)
11:00   2235   Photodefinable Polybenzoxazole as Interlevel Dielectric and Buffer Layer for GaAs HBT Technology J. Yota, H. Ly and D. Barone (Skyworks Solutions, Inc.)
11:20   2236   DFT Study of Atomic Structure of Epitaxially Grown Sb Irradiated GaAs(001) Surface A. Ishii, H. Ohno (Tottori University) and Y. Oda (Tottori Universiyt)
11:40   2237   InP-based HEMTs Suitable for Ultra-high-speed MMICs Fabrication N. Hara, T. Takahashi (Fujitsu), T. Ohki (Fujitsu Laboratories) and K. Makiyama (Fujitsu)
12:00 Intermission (120 Minutes)
14:00   2238   Directed Crystallization under Nanoscopic Cylindrical Confinement K. Shin, E. Woo, K. Noh (Seoul National University), Y. Jeong (Kumoh National University), J. Huh (Seoul National University) and K. Kim (Pohang Light Source)
14:30   2239   Si and SiGe Based Double Top Gated Accumulation Mode Single Electron Transistors for Quantum Bits M. S. Carroll, E. Nordberg, K. Eng, L. Tracy and G. Ten Eyck (Sandia National Laboratories)
15:00   2240   RF Sputter Deposition of Indium Oxide - Iron Oxide Films for Photoelectrochemical Hydrogen Production W. B. Ingler Jr., G. Ong and X. Deng (University of Toledo)
15:20 Intermission (20 Minutes)
15:40   2241   Mesoscopic Transport in Undoped Heterostructures S. J. Sarkozy, K. Das Gupta, F. Sfigakis, M. Pepper, I. Farrer, D. Ritchie and G. Jones (University of Cambridge)
16:10   2242   Advanced Processing Techniques for Sub-Millimeter Wave MMICs J. J. Uyeda, X. Mei, L. Lee, D. Li, W. Yoshida, P. Liu, L. Dang, K. Luo, R. Elmadjian (Northrop Grumman Corporation), J. Zhou (NGST), W. Deal, V. Radisic and R. Lai (Northrop Grumman Corporation)
16:40   2243   Analysis of Intrinsic and Parasitic Gate Delay of InGaAs HEMTs T. Suemitsu (Tohoku University)
17:00   2244   Highly Selective and Low Damage Neutral Beam Etching of GaAs/AlGaAs Heterostructures B. Park, T. Min, S. Kim, S. Kang, H. Lee, G. Yeom (Sungkyunkwan University), S. Shin, T. Kim (Gwangju Institute of Science and Technology), K. Chang (Korea Basic Science Institute Division of Instrucment Deveolpment), J. Song, Y. Lee and J. Jang (Gwangju Institute of Science and Technology)
17:20   2245   Transistor Level Integration of InP HBT and Si CMOS P. Nam (Northrop Grumman Space Technology), J. Zhou (NGST), P. Chang-Chien, K. Hennig (Northrop Grumman), D. Scott (NGST), B. Oyama, K. Thai, W. Phan (Northrop Grumman Space Technology), R. Sandhu, A. Gutierrez-Aitken (NGST), J. Wang (Northrop Grumman Space Technologies), M. Barsky and A. Oki (Northrop Grumman Space Technology)
17:50   2246   An Efficient Self-Driven CM-n-TiO2 / p-GaInP2 Photoelectrochemical Cell for Water Splitting W. B. Ingler Jr. (University of Toledo), Y. Shaban and S. U. Khan (Duquesne University)
18:10   2247   Enhanced Photoresponse of Hydrogen-Modified (HM)-n-TiO2 for Water Splitting Reaction M. Frites, Y. Shaban and S. U. Khan (Duquesne University)
 

Tuesday, October 14, 2008

Room 307B, Level 3, Hawaii Convention Center

GaN and SiC Materials

Co-Chair(s): H.C. Kuo and J.Kim
TimeAbs#Title and Authors
08:00   2248   Anisotropic, Smooth High-Density Plasma Etching of GaN/AlGaN for Etch Facet Laser Applications R. J. Shul (Sandia National Labs), M. Miller, M. Crawford, J. Stevens, A. Allerman, K. Bogart, M. Banas, K. Cross (Sandia National Laboratories), J. Wright and S. J. Pearton (University of Florida)
08:30   2249   Effect of the Silver Mirror Location on the Luminance Intensity of Double Roughened GaN Light-Emitting Diodes P. Huang and Y. Wu (National Chiao Tung University)
09:00   2250   Progress in the Growth, Characterization and Device Performance for Nonpolar and Semipolar GaN-based Materials J. Speck (UC Santa Barbara)
09:30   2251   Investigation and Fabrication of AlGaN/GaN MOS-HEMTs with Gate Insulators Grown by Photoelectrochemical Oxidation Method C. Lee and L. Huang (National Cheng Kung University, Institute of Microelectronics)
10:00 Intermission (20 Minutes)
10:20   2252   Thermal Management Design from Chip to Package for High Power InGaN/sapphire LEDs Applications R. Horng, C. Chiang, D. Wuu (National Chung Hsing University) and H. Lin (Liung Feng Industrial Co., LTD)
10:50   2253   Light Output Power Enhancement of GaN-based Vertical Light Emitting Diodes via Fabricating Surface Nanorod Arrays C. Chiu (Institute of Electro-Optical Engineering, National Chiao Tung University), H. C. Kuo (National Chiao-Tung University), T. Lu, S. Wang (Institute of Electro-Optical Engineering, National Chiao Tung University), C. Hsiao and S. Chen (Department of Materials Science and Engineering, National Chiao Tung University)
11:10   2254   Enhancement of Light Extraction Efficiency by Nano-patterning of GaN-based LEDs J. Kim and J. Bang (Korea University)
11:40 Intermission (150 Minutes)
14:10   2255   Effect of Laser Sources on the Structural Damage Mechanisms and Reverse-bias Leakages of Laser Lift-off GaN-based LEDs J. Cheng, C. Liao, P. Huang and Y. Wu (National Chiao Tung University)
14:40   2256   Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor C. Li, Z. Low, X. Yu, J. Lin (University of Florida, Department of Electrical and Computer Engineering, Gainesville, FL 32611), T. J. Anderson, H. T. Wang (University of Florida, Department of Chemical Engineering, Gainesville, FL 32611), F. Ren (University of Florida), Y. L. Wang, C. Y. Chang (University of Florida, Department of Material Science and Engineering, Gainesville, FL 32611), S. J. Pearton (University of Florida), C. Hsu (Feng Chia University), A. Osinsky, A. M. Dabiran (SVT Associates, Inc.), P. Chow (SVT Associates, Eden Prairie, MN 55344), C. Balaban (University of Florida, Gainesville, FL 32611) and J. Painter (J Painter Consulting LLC, Deltona, FL 32738)
15:10   2257   Optical Properties of a Strain Relaxed Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling C. Chiu, P. Yu, J. Chen, C. Kao (Institute of Electro-Optical Engineering, National Chiao Tung University), H. C. Kuo (National Chiao-Tung University), T. Lu, S. Wang (Institute of Electro-Optical Engineering, National Chiao Tung University), Y. Wu and H. Yang (Institute of Photonics and Optoelectronics and Department of Electrical Engineering)
15:30 Intermission (20 Minutes)
15:50   2258   Impact of Surface Conditioning of 4H-SiC for Characterization and Device Manufacture A. M. Hoff, E. Short and E. Oborina (University of South Florida)
16:20   2259   Ultraviolet Band Emission Properties of InAlGaN-based Thin Films S. Hu (Tung Fang Institute of Technology), Y. Lee (Tungnan University), Z. Feng and Y. Lee (National Taiwan University)
16:40   2260   Strain Relaxed GaN/InGaN Nanorod Light Emitting Arrays L. Chen, C. Wang, C. Chen, Y. Cheng, M. Ke, H. Wu, L. Peng and J. Huang (National Taiwan University)
17:00   2261   InGaN-based Light Emitting Diodes with Photoelectrochemical Lateral Etching Process on InGaN Active Layers C. Lin, C. Yang and H. Liu (National Chung Hsing University)
17:20   2262   Very High Channel Conductivities in Low-Defect AlN/GaN HEMTs Grown by MBE A. M. Dabiran, A. Osinsky, A. Wowchak, B. Hertog, B. Cui (SVT Associates, Inc.) and P. Chow (SVT Associates, Eden Prairie, MN 55344)