214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E13 - Thin Film Transistors 9 (TFT 9)

Electronics and Photonics
 

Monday, October 13, 2008

Room 302A, Level 3, Hawaii Convention Center

Introduction and TFT-Based Systems

Co-Chair(s): Y. Kuo
TimeAbs#Title and Authors
10:00 Introductory Remarks (5 Minutes)
10:05   2263   A Fully Monolithic Wireless Display System E. Zyambo, L. Lukama (Sharp Laboratories of Europe Limited), C. Brown, K. Miyata (Sharp Corporation, Japan) and M. Brownlow (Sharp Laboratories of Europe Limited)
10:35   2264   Large Area AMOLEDs based on Sequential Lateral Solidification Process C. Kim (Samsung Electronics Co.), J. Choi (Samsung Electronics Co., LTD.), Y. Chang, X. Huang and J. Lee (Samsung Electronics Co., LTD)
 

TFT Devices

Co-Chair(s): M. Shur and C.-W. Kim
TimeAbs#Title and Authors
11:05   2265   Issues in Microcrystalline Silicon TFTs Processed at T<200oC T. Mohammed-Brahim, K. Kandoussi (Rennes 1 University), N. Coulon (Université de Rennes 1) and C. Simon (Rennes 1 University)
11:35   2266   The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing W. Lee, H. Shin (Seoul National University), K. Cho, J. Choi, C. Kim (Samsung Electronics Co.) and M. Han (Seoul National University)
 

TFT Devices (continued)

TimeAbs#Title and Authors
14:00   2267   Extraction of the Density of Interface Trap States in Thin-Film Transistors H. Tsuji, Y. Kamakura and K. Taniguchi (Osaka University)
14:20   2268   A DLTS Study of Band Gap States in SLS poly-Si TFTs L. Michalas, G. Papaioannou (University of Athens) and A. Voutsas (Sharplabs of America)
14:40   2269   Visible Light Source Disturbing the Source/Drain Current of CLC Poly-Si n-TFT Device M. Wang, Z. Hsieh (Ming-Hsin University of Science and Technology), C. Chen (National Chiao Tung University), J. Shieh (National Nano Device Laboratories), Y. Lin (National Chiao Tung University) and H. Huang (National Taipei University of Technology)
15:00   2270   Enhanced Drain Current Ripple Variation with Vertical and Horizontal Electrical Fields under Optical Illumination M. Wang, Z. Hsieh, Y. Chu (Ming-Hsin University of Science and Technology), C. Chen (National Chiao Tung University), J. Shieh (National Nano Device Laboratories) and Y. Lin (National Chiao Tung University)
15:20   2271   A Mobility Model for Non Isotropic OTFT R. Picos (UIB), B. Iñiguez (Universitat Rovira i Virgili), E. Garcia-Moreno (UIB), M. Deen (McMaster University) and M. Estrada (Cinvestav)
15:40 Intermission (20 Minutes)
 

TFT Reliability

Co-Chair(s): S. Uchikoga
TimeAbs#Title and Authors
16:00   2272   Analysis of the Hysteresis Behavior in Poly-Si TFTs Using On-the-Fly Measurement T. Kawamura (Hitachi, Ltd., Central Research Laboratory), H. Uchida (MEITEC Corporation), M. Matsumura, H. Kageyama and M. Hatano (Hitachi, Ltd., Central Research Laboratory)
16:20   2273   Reliability Analysis of Single Grain Si TFT using 2D Simulation A. Baiano, J. Tan, R. Ishihara and K. Beenakker (TUDelft)
16:40   2274   Instability Behavior of Oxide-Based Top-Gate TFTs under Electrical and Optical Stress Test J. Cho, J. Jeong and Y. Hong (Seoul National University)
 

Tuesday, October 14, 2008

Room 302A, Level 3, Hawaii Convention Center

Advanced Processes

Co-Chair(s): M. Hatano, O. Bonnaud, and Z. Bao
TimeAbs#Title and Authors
08:00   2275   Recent Progresses in Ultrahigh-Performance TFT Technologies --- Advanced PMELA Method and its TFT Application --- T. Endo (ALTEDEC)
08:30   2276   Crystallinity and Internal Strain of One-Dimensionally Long Si Grains by CW Laser Lateral Crystallization S. Fujii, S. Kuroki, X. Zhu, M. Numata, K. Kotani and T. Ito (Tohoku University)
08:50   2277   Formation of Location-Controlled Germanium Grains by Excimer Laser A. Baiano, R. Ishihara, J. Van der Cingel and K. Beenakker (TUDelft)
09:10   2278   The AMOSFET - A Simple, High Performance FET for Thin Films, Nanowires, and Nanoribbons P. Garg, Y. Hong (The Penn State University), M. Iqbal (Cambridge University) and S. J. Fonash (Pennsylvania State University)
09:40   2279   Highly-Textured Polycrystalline Silicon TFTs Using Single-Crystalline Si Nanowire Seed Templates H. Lee, D. Lee, C. Kim, Y. Woo (POSTECH) and M. Jo (Pohang University of Science and Technology (POSTECH))
10:00   2280   High Performance Short Channel a-Si:H TFT Device with Cu Electrodes J. Yang, Y. Ahn, J. Bang, W. Ryu, J. Kim, Y. Kang, J. Yang, Y. Kang and I. Cung (LG Display)
10:20 Intermission (20 Minutes)
10:40   2281   A Vertical Thin Film Transistor Comb Based only on Technology Low Temperature (T<600o) H. D. Toure (IETR), T. Gaillard, N. Coulon (Université de Rennes 1) and O. Bonnaud (University Rennes 1)
11:00   2282   Highly Stable Bottom-Gate Nanocrystalline Silicon Thin Film Transistor Fabricated Employing ICP-CVD S. Kim, S. Han (Seoul National University), J. Kwon (Samsung Electronics CO. LTD.), J. Jung (Samsung Advanced Institute of Technology) and M. Han (Seoul National University)
11:20   2283   Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Millisecond Annealing and Its Application to Floating Gate Memory T. Okada, S. Higashi, H. Kaku, H. Furukawa and S. Miyazaki (Hiroshima University)
11:40   2284   Micro Crystalline Si1-xGex Deposited by Magnetron Sputtering A. Hiroe, T. Goto (Tohoku University), A. Teramoto and T. Ohmi (New Industry Creation Hatchery Center, Tohoku University)
 

Advanced Processes (continued)

Co-Chair(s): S. Fonash and T. Someya
TimeAbs#Title and Authors
14:00   2285   Stress Induced Orientation Control by Metal Induced Lateral Crystallization T. Chen (Delft University of Technology), R. Ishihara and K. Beenakker (TUDelft)
14:20   2286   Using Chemical Oxide Layer to Getter Nickel inside Nickel-Metal-Induced Lateral Crystallization Polycrystalline Silicon B. Wang, T. Yang, C. Tseng and Y. Wu (National Chiao Tung University)
14:40   2287   Etching Treatment of MILC Poly-Si TFTs Using CF4 Plasma to Improve Electrical Performance C. Chang, Y. Wu, C. Chen and M. Lai (National Chiao Tung University)
15:00   2288   Improvement of Electrical Characteristics in SPC-Si TFT Employing H2 Plasma Treatment S. Park, S. Kim, J. Lee, C. Kim and M. Han (Seoul National University)
15:20 Intermission (20 Minutes)
 

Organic TFTs

Co-Chair(s): C. Williams and S. Tokito
TimeAbs#Title and Authors
15:40   2289   Top-Contact Organic Thin-Film Transistors Fabricated by Picoliter and Sub-Femtoliter Inkjets T. Sekitani, Y. Noguchi (University of Tokyo), H. Klauk, U. Zschieschang (Max Planck Institute for Solid State Research) and T. Someya (University of Tokyo)
16:10   2290   All-solution-processed Organic Thin-Film Transistor using Inkjet-printed Silver Electrodes J. Kim (Seoul National University), S. Kwon (Gyeong Sang University), J. Kim (Soeul National University) and Y. Hong (Seoul National University)
16:30   2291   Materials and Processes for Thin Film Flexible Electronics Z. Bao (Stanford University)
17:00   2292   High Performance Organic Thin Film Transistors made Simple Through Molecular Design and Processing O. D. Jurchescu, B. Hamadani (National Institute of Standards and Technology), D. Mourey (Penn State University), S. Subramanian, J. Anthony (University of Kentucky), T. Jackson (Penn State University) and D. Gundlach (National Institute of Standards and Technology)
17:20   2293   Solution-Processable Selective Organization of Organic Thin-Film Transistors T. Minari (RIKEN), M. Kano (Dai Nippon Printing Co. Ltd.), T. Miyadera, S. Wang and K. Tsukagoshi (AIST)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session

Co-Chair(s): P.-T. Liu and O. Bonnaud
TimeAbs#Title and Authors
o   2294   Oxygenated Chalcogenide Thin Film Transistor K. Song, S. Lee, H. Hong (ETRI) and J. Kim (Department of Physics, University of Incheon)
o   2295   Low Temperature Post-Annealing of ZnO Thin-Film Transistors with HfO2 Gate Dielectrics H. Chen (Department of Electrical Engineering National Chi Nan University), B. B. Yeh and W. Chou (National Cheng Kung University)
o   2296   IGZO Based Thin Film Transistors using MgO-BST Composite Gate Dielectric on PET Substrate for Low Voltage Operating D. Kim, N. Cho (KAIST), J. Yoo (Korea Advanced Institute of Science and Technology), H. Kim (KAIST) and I. Kim (KIST)
o   2297   Improving the Electrical Properties of NILC poly-Si Films using Gettering a-SiFfilm Through Contact Holes C. Hu (National Chiao Tung University)
o   2298   All-Organic Thin Film Transistor Circuits with Ink-Jet Printed Electrodes J. Kim, J. Kim, H. Lee, T. Yoon and Y. Kim (Myongji University)
o   2299   Ink-Jet Printed 6,13-bis (triisopropylsilylethynyl) Pentacene Organic Thin-Film Transistors for Particle Based Electronic Papers Y. Kim, S. Park (Korea Electronics Technology Institute), S. Park, M. Han (Seoul National University) and J. Han (Korea Electronics Technology Institute)
o   2300   Organic Field-effect Transistors Based on 2,9-Disustituted Pentacenes Y. Kunugi, Y. Busujima, M. Ikari (Tokai University), K. Okamoto (Ushio Chemix Co.) and K. Ogino (Tokyo University of Agriculture and Technology)
o   2301   Nanotube Random Networks for High-performance Flexible Thin-film Type Electronic Systems Q. Cao and J. Rogers (University of Illinois at Urbana-Champaign)
o   2302   Ba0.6Sr0.4TiO3 Amorphous Thin Films used as Gate Dielectric in Organic Transistors G. Dong (Tsinghua University), Y. Lu and Y. Qiu (Department of Chemistry, Tsinghua University)
o   2303   The Enhancement of SiO2/Si Interface by using Two Step Ammonia Plasma Treatment D. V. Nguyen, S. Hwang, S. Jung and J. Yi (Sungkuynkwan University)
o   2304   Effect of Heat-treatment on Reliability of a-Si:H TFTs for integrated Gate Driver Circuits D. Nam and S. Jeong (LG Display)
o   2305   Stability of Microcrystalline Silicon TFTs K. Belarbi, K. Kandoussi (Rennes 1 University), N. Coulon (Université de Rennes 1), C. Simon and T. Mohammed-Brahim (Rennes 1 University)
o   2306   Mechanisms of Polycrystalline Growth of SiGe in Thermal CVD Processes using Si2H6 and GeF4 A. Kagatsume (Hitachi, Ltd.), I. Suzumura (Hitachi, Ltd., Central Research Laboratory), M. Wakagi (Hitachi, Ltd., Hitachi Research Laboratory) and J. Hanna (Tokyo Institute of Technology)
o   2307   Properties of Grown Silicon Films by LPCVD and Their Characterization Study for TFT Applications K. Jang, J. Lee (Sungkyunkwan University), S. Jung (Sungkuynkwan University), B. Choi (Sungkyunkwan University) and J. Yi (Sungkuynkwan University)
 

Wednesday, October 15, 2008

Room 302A, Level 3, Hawaii Convention Center

Organic TFTs

Co-Chair(s): M. K. Han and E. Zyambo
TimeAbs#Title and Authors
08:00   2308   High-Performance Organic Thin-Film Transistors for Flexible AMOLED Display S. Tokito (NHK)
08:30   2309   Status and Issues of Organic TFT for Display Applications C. Kim, I. Kang and I. Chung (LG Display)
09:00   2310   Low-Voltage Organic Thin-Film Transistor With High-κ LaYOx Gate Insulator C. Deng (Institute of Electronics) and B. Chiou (Institute of Electronics, National Chiao-Tung University)
09:20   2311   Flexible Low-voltage Pentacene Thin-film Transistor with High-k/Low-k Double Polymer Dielectric Layer K. Lee, K. Lee, M. Oh, J. Choi (Yonsei University), S. Jang, E. Kim (Hongik university) and S. Im (YONSEI University)
09:40   2312   Drain Bias Influence on Light-Induced Threshold Voltage Shift of OTFTs H. Zan and S. Kao (National Chiao Tung University)
10:00   2313   Improved Air-stability of n-Channel Organic Thin Film Transistors via Surface Modification on Gate Dielectrics F. Chen, C. Liao (National Chiao Tung University), W. Huang and T. Huang (AU Optronics Corp.)
10:20 Intermission (20 Minutes)
 

Metal Oxide TFTs

Co-Chair(s): A. Mimura and F. Yan
TimeAbs#Title and Authors
10:40   2314   Highly Stable ZnO TFT S. K. Park, C. Hwang (ETRI), M. Ryu (Electronics and Telecommunications Research lnstitute), J. Shin, S. Yang, S. Yoon and H. Chu (ETRI)
11:10   2315   Improvement of Current Stability of Amorphous Oxide Thin-Film Transistors using SOG Passivation C. Kim, S. Kim and S. Kim (SAIT)
11:30   2316   High Performacne InGaZnO4-based Thin film Transistors Fabricated at Low Temperature W. Lim, Y. Wang, J. Lee, D. P. Norton, F. Ren and S. J. Pearton (University of Florida)
11:50   2317   High-Performance Oxide Thin Film Transistors Passivated by Various Gas Plasmas S. Kim (SAIT), J. Park (Samsung Advanced Institute of Technology), C. Kim, S. Kim, I. Song, H. Yin, J. Lee, E. Lee and Y. Park (SAIT)
12:10   2318   Stability Improvement of Gallium Indium Zinc Oxide Thin Film Transistors by Post-Thermal Annealing J. Jung, K. Son, T. Kim, M. Ryu, K. Park, B. Yoo, S. Lee (Samsung Advanced Institute of Technology) and J. Kwon (Samsung Electronics CO. LTD.)
 

TFTs on Flexible Substrates

Co-Chair(s): G. R. Chaji and S.-H. K. Park
TimeAbs#Title and Authors
14:00   2319   Flexible TFT on a Heat Resistant Transparent Polymer with the Standard a-Si TFT Process over 300ºC T. Hattori, M. Kato (Hitachi, Ltd., Central Research Laboratory), M. Wakagi (Hitachi, Ltd., Hitachi Research Laboratory), T. Yoshida (Hitachi, Ltd., Materials Research Laboratory) and M. Hatano (Hitachi, Ltd., Central Research Laboratory)
14:30   2320   Fabrication of Poly-Si TFTs on Flexible Quartz Fibers A. Mimura (National Institute of Advanced Industrial Science and Technology (AIST)), T. Nakamura (Furukawa Electric Co. Ltd.), Y. Sugawara (Nara Institute of Science and Technology (NAIST)), Y. Uraoka (NAIST), I. Shuu (Furukawa Electric Co. Ltd.), T. Ikehara, T. Itoh, R. Maeda, K. Suzuki (National Institute of Advanced Industrial Science and Technology (AIST)), A. Nakajima and H. Koaizawa (Furukawa Electric Co. Ltd.)
15:00   2321   Flexible High Gain Complementary Inverter using n-ZnO and p-pentacene Channels on Plastic Substrate S. Im, M. Oh and K. Lee (YONSEI University)
15:20   2322   Direct Fabrication of a-Si:H Thin Film Transistor Arrays on Flexible Plastic Film and Metal Foil Substrates: Critical Challenges and Enabling Solutions S. O'Rourke, D. Loy, C. Moyer, E. Bawolek, S. Ageno, B. O'Brien, M. Marrs, D. Bottesch, J. Dailey, R. Naujokaitas, J. Kaminski, D. Allee, S. Venugopal, J. Trujillo, R. Cordova, M. Richards, N. Colaneri and G. B. Raupp (Arizona State University)
15:40   2323   The Strain Effects on Flexible a-Si:H TFTs L. Teng (National Chiao-Tung University), P. Liu, S. Tsai (National Chiao Tung University), I. Peng (National Tsing-Hua University) and Y. Chou (National Chiao Tung University)
16:00   2324   Effect of Passivation Layer on the Reliability of Flexible a-Si:H TFTs Y. Chou, P. Liu, S. Tsai, C. Su (National Chiao Tung University) and I. Peng (National Tsing-Hua University)
16:20   2325   Copper Reliability of TFT Array for Flexible Displays Y. Kuo and G. Liu (Texas A&M University)
 

Thursday, October 16, 2008

Room 302A, Level 3, Hawaii Convention Center

New TFT Applications and Circuits

Co-Chair(s): T. Hattori and T. Mohammed-Brahim
TimeAbs#Title and Authors
08:00   2326   Sensors Based on Organic Thin Film Transistors F. Yan (Hong Kong Polytechnic University), S. Mok, P. Lin and H. Chan (Department of Applied Physics, The Hong Kong Polytechnic University)
08:30   2327   An Image Sensor using Photo-leakage Current and Feed-through Voltage of amorphous Si Thin-Film Transistors Y. Hara, A. Kinno and S. Uchikoga (Toshiba Corporation)
08:50   2328   Development of Integrated Electronics on Silicon-on-Glass (SiOG) Substrate R. Manley, G. Fenger, P. Meller, K. Hirschman (Rochester Institute of Technology), C. A. Kosik Williams, D. Dawson-Elli (Corning Incorporated), J. Couillard (Corning Incorporate) and J. Cites (Corning Incorporated)
09:10   2329   Stable Pixel Circuit for Small-Area High-Resolution a-Si:H AMOLED Displays G. Chaji (Ignis Innovation Inc.) and A. Nathan (University College London)
09:40   2330   Compensation Pixel Circuit Using LTPS TFT For AMOLED Displays P. Liu, L. Chu and Y. Huang (National Chiao Tung University)
10:00   2331   Analog Circuits Design using Polycrystalline Silicon TFTs E. Jacques, F. Le Bihan, S. Crand and T. Brahim (Université de Rennes 1)
10:20 Concluding Remarks (10 Minutes)