214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E15~23 - SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 3

Electronics and Photonics
 

Monday, October 13, 2008

Room 305B, Level 3, Hawaii Convention Center

Plenary Session

Co-Chair(s): D. Harame
TimeAbs#Title and Authors
10:00 Introductory Remarks (15 Minutes)
10:15   2369   Germanium for High Performance MOSFETs and Optical Interconnects K. Saraswat (Stanford University)
11:05   2370   Si and SiGe Epitaxy in Perspective W. B. De Boer (Delft University of Technology)
 

FET I. Advanced CMOS Architectures

TimeAbs#Title and Authors
13:10   2371   Si/SiGe Epitaxy and Selective Etch Applications for Advanced Thin-Films MOSFET Structures N. Loubet, F. Boeuf, S. Denorme, G. Bidal, E. Batail, P. Coronel, T. Skotnicki and D. Dutartre (STMicroelectronics)
13:40   2372   Carbon- and Tin- Incorporated Source/Drain Stressors for CMOS Transistors Y. Yeo (National University of Singapore)
14:10   2373   Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si D. Kim, T. Krishnamohan and K. Saraswat (Stanford University)
14:30   2374   Fabrication and Characterization of Suspended Uniaxial Tensile Strained-Si Nanowires for Gate-All-Around Nanowire n-MOSFETs P. Hashemi (MIT Microsystems Technology Laboratories), M. Canonico (Physical Analysis Laboratory, Freescale Semiconductor Inc.), J. Yang (MIT Nano Structures Laboratory), L. Gomez (MIT Microsystems Technology Laboratories), K. Berggren (MIT Nano Structures Laboratory) and J. Hoyt (Massachusetts Institute of Technology)
 

Joint Session FET/Strain I. Strain Engineered FETs

TimeAbs#Title and Authors
15:05   2375   Stress Manipulation with Strained-Silicon Directly (SSOI) on Insulator A. Thean (Freescale Semiconductor)
15:35   2376   High Hole Mobility SGOI Substrates Obtained by the Germanium Condensation Technique L. Souriau (IMEC), T. Nguyen (IMEP/INP), W. Vandervorst, R. Loo, V. Terzieva, M. Caymax and M. Meuris (IMEC)
15:55   2377   Simulation of <110> nMOSFETs with a Tensile Strained Cap Layer F. Bufler (Institut fur Integrierte Systeme), F. O. Heinz, A. Tsibizov and M. Oulmane (Synopsys Schweiz GmbH)
16:15   2378   Strain Technology under Metal/High-k Damascene-Gate Stacks H. Wakabayashi (SONY Corporation)
16:45   2379   Study on Stress Memorization by Argon Implantation and Annealing M. Hino (Tokyo Institute of Technology), K. Nagata, T. Yoshida, D. Kosemura (Meiji University), K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii (Tokyo Institute of Technology), A. Ogura (School of Science and Technology, Meiji University), T. Hattori and H. Iwai (Tokyo Institute of Technology)
 

Coral 1; Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session Talks

TimeAbs#Title and Authors
18:50   2380   Inductively Coupled Ar/CCl2F4 /Cl2 Plasma Etching of Ge T. Kim, S. Choi, T. Jeong, S. Kang and K. Shim (Chonbuk National University)
18:53   2381   Enhanced Growth of Low-Resistivity Titanium Silicides on Epitaxial Si0.7Ge0.3 on (001)Si with a Sacrificial Amorphous Si Interlayer W. Wu (National Chiao Tung University) and S. Lee (National Central University)
18:56   2382   Ab-initio Simulation of Formation and Diffusion Energies of Intrinsic Point Defects in Ge P. Spiewak, K. Kurzydlowski (Warsaw University of Technology), K. Sueoka (Okayama Prefectural University), J. Vanhellemont (Ghent University) and I. Romandic (Umicore EOM)
18:59   2383   Liquid Phase Diffusion Growth of SiGe Single Crystals under Magnetic Fields N. Armour and S. Dost (University of Victoria)
19:02   2384   Reactive Ion Etch of Si3N4 Spacers High Selective to Germanium E. Altamirano, E. Kunnen, B. De Jaeger and W. Boullart (imec)
19:05   2385   Selective Epitaxial Growth with Full Control of Pattern Dependency Behavior for pMOSFET Structures M. Kolahdouz, J. Hallstedt, M. Ostling (Royal Institute of Technology KTH), R. Wise (Texas Instruments) and H. Radamson (Royal Institute of Technology KTH)
19:08   2386   Evaluation of DiMethylAminoGermaniumTetraChloride as a novel Carbon-Dopant and Germanium Precursor for Germanium and Silicon Germanium Chemical Vapor Deposition F. E. Leys (IMEC), C. Liu (Katholic University of Leuven), X. Shi (IMEC), B. Lamare (Rohm and Haas Electronic Materials), M. Schaekers, R. Loo (IMEC), E. Woelk (Rohm and Haas Electronic Materials) and M. Caymax (IMEC)
19:11   2387   Polarity Change of Threshold Voltage Shifts for n-channel Polycrystalline Silicon Thin-Film Transistors Stressed by Negative Gate Bias C. Huang, Y. Yang, C. Peng, H. Sun (Graduate Institute of Electronics Engineering, National Taiwan University), C. Liu (Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University), Y. Hsu, C. Shih and K. Lin (AU Optronics Corp.)
19:14   2388   Hole Mobilities of Si0.6Ge0.4 Quantum Well Buried-Channel Field Effect Transistors on SOI K. Fujinaga (Hokkaido Institute of Technology)
19:17   2389   Asymmetric Energy Distribution of Interface Traps in Germanium MOSFETs with HfO2 Gate Dielectric R. Xie, N. Wu, C. Shen and C. Zhu (National University of Singapore)
19:20   2390   Scalability of Partially-Depleted Biaxially-Strained SOI Technology J. Hoentschel, A. Wei, S. Flachowsky, R. Boschke, M. Horstmann (AMD Saxony LLC & Co. KG) and I. Cayrefourcq (SOITEC)
19:23   2391   UV and Visible Raman Spectroscopy Applied to s-Si/Si1-xGex and s-SOI Multi-layer Systems D. Rouchon (CEA), J. Hartmann (CEA-LETI MINATEC), A. Crisci (SIMAP/INPG) and M. Mermoux (LEPMI/INPGà)
19:26   2392   Enhancement of Local Strain in Si Microstructure by Oxidation Induced Ge Condensation M. Tanaka, T. Tanaka, T. Sadoh (Kyushu University), J. Morioka, T. Kitamura (Toshiba Semiconductor) and M. Miyao (Kyushu University)
19:29   2393   Extended Defects in Ge-Condensed SGOI Structures Fabricated by Proton and Helium Implantation D. Kwak, M. Seo, D. Lee, Y. Lee and H. Cho (Dongguk University)
19:32   2394   Strain in Epitaxial Si/SiGe Graded Buffer Structures Grown on Si (100), Si (110) and Si(111): a Raman Spectroscopy Study D. Rouchon (CEA), V. Destefanis (STMicroelectronics), J. Hartmann (CEA-LETI MINATEC), A. Crisci (SIMAP/INPG) and M. Mermoux (LEPMI/INPGà)
19:35   2395   Silicon Nanomembranes Incorporating Strain and Mixed Crystal Orientations S. A. Scott, D. M. Cottrill, D. E. Savage and M. G. Lagally (University of Wisconsin-madison)
19:38   2396   Formation of SiGe Quasi-Single Crystal Grain on Insulator by Indentation-Induced Solid-Phase Crystallization T. Sadoh, K. Toko and M. Miyao (Kyushu University)
19:41   2397   Reliability of Ti-based Gate Dielectrics on strained-Si0.91Ge0.09 and Ge under Dynamic and AC Stressing C. Mahata (Indian Institue of Technology,Kharagpur), M. K. Bera (Indian Institue of Technology, Kharagpur), P. Bose (Mechanical Engineering Dept., Jadavpur University) and C. Maiti (Indian Institue of Technology)
19:44   2398   Regrowth Kinetics Of Self-amorphized Germanium and Evolution Of Implant Damage S. Koffel (CEA-LETI), P. Scheiblin (CEA) and A. Claverie (CNRS)
19:47   2399   CMOS-compatible, High-Ge-content Thin SiGe/Si Virtual Substrates G. Capellini, M. De Seta, M. Pea, Y. Busby (Università Roma Tre), C. Ferrari (IMEM-Cnr), M. Nardone (Università dell'Aquila) and F. Evangelisti (Università Roma Tre)
19:50   2400   Temperature-dependent Operation of Ge on Si p-i-n Photodetectors L. Colace, M. Balbi, V. Sorianello and G. Assanto (University Roma Tre)
19:53   2401   Chemical Mechanical Polishing of Epitaxial Germanium on SiO2-patterned Si(001) Substrates J. M. Hydrick, J. Park, J. Bai, C. Major, M. Curtin, J. Fiorenza, M. Carroll and A. Lochtefeld (AmberWave Systems Corp.)
19:56   2402   Micro-Raman Studies on Nickel Germanides Formed on (110) Crystalline Ge C. Peng, C. Huang, Y. Yang (Graduate Institute of Electronics Engineering, National Taiwan University) and C. Liu (Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University)
19:59   2403   Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2 K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki (Hiroshima University)
20:02   2404   Generation of Acceptor Levels in Ge by the Uniaxial Strain -A Theoretical Approach- K. Takai, K. Shiraishi (University of Tsukuba) and A. Oshiyama (The University of Tokyo)
20:05   2405   Influence of in-situ Doped Boron on the Surface Roughening of SiGe:B Films R. Tsuchida (Nagaoka University of Technology), S. Mori, T. Sato (Toshiba Corporation, Semiconductor Company), N. Uchitomi (Nagaoka University of Technology) and I. Mizushima (Toshiba Corporation, Semiconductor Company)
20:08   2406   Low Temperature Epitaxial Growth of Full Heusler Alloy Fe2MnSi on Ge(111) Substrates for Spintronics Application K. Ueda, Y. Ando, K. Yamamoto, M. Kumano, T. Sadoh (Kyushu University), K. Narumi (Japan Atomic Energy Agency), Y. Maeda (Kyoto University) and M. Miyao (Kyushu University)
20:11   2407   Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor Y. Kishi, M. Kumano, K. Ueda, T. Sadoh and M. Miyao (Kyushu University)
20:14   2408   Schottky Barrier Height Engineering on NiSiGe/SiGe Contacts C. D. Tan, C. Chua and D. Chi (Institute of Materials Research and Engineering)
20:17   2409   Heteroepitaxial Integration of Single Crystalline Ge(111) layers on Si(111) via PrO2(111) Heterostructures A. Giussani, O. Seifarth, P. Rodenbach, P. Zaumseil, H. Muessig (IHP), P. Storck (SILTRONIC AG) and T. Schroeder (IHP)
20:20   2410   Dynamic Study on Microstrutural Evolution of Nickel-germanide in the Ni1-xZrx/Ge systems J. Lee, K. Song, J. Bae, M. Park, H. Kang and C. Yang (Sungkyunkwan University)
20:23   2411   Effect of Strained-Si Layer Thickness on Dislocation Distribution and SiGe Relaxation in Strained-Si/SiGe Heterostructures J. Lu (North Carolina State University), M. Seacrist (MEMC Electronic Materials) and G. Rozgonyi (North Carolina State University)
20:26   2412   Engineering SiGe Growth Using Mechanically Responsive Ultrathin Substrates H. Kim-Lee (University of Wisconsin), D. E. Savage, C. Ritz, M. G. Lagally (University of Wisconsin-madison) and K. T. Turner (University of Wisconsin)
20:29   2413   Characterization of Si1-xGex Epilayer Thickness, Ge and Doped Boron Concentration with UV-Vis-IR Spectroscopic Ellipsometer A. Bondaz (SOPRA) and L. Kitzinger (SOPRA, Inc.)
20:32   2414   Study of Surface Modification on H-terminated Ge(100) Surface K. Park and S. Lim (Yonsei University)
20:35   2415   Role of Iodine on Oxidation of Ge(100) Surface in Methanol Y. Lee and S. Lim (Yonsei University)
 

Tuesday, October 14, 2008

Room 305B, Level 3, Hawaii Convention Center

Strain I. Strain Engineering using Crystal Growth

TimeAbs#Title and Authors
09:00   2416   Recent Progress and Challenges in Enabling Embedded Si:C Technology B. F. Yang (Advanced Micro Devices), Z. Ren, R. Takalkar, J. Li (IBM), L. R. Black (AMD), A. Dube (IBM), J. W. Weijtmans (AMD), A. Chakravarti (IBM), G. Pei, R. Pal (AMD), G. Xia, K. Chan, Z. Zhu, A. Madan, T. N. Adam (IBM), B. Yang (AMD), J. Souza, E. C. Harley, B. Greene (IBM), A. Gehring (AMD), M. Cai, D. Sadana, D. Park, D. Mocuta, D. J. Schepis, E. Maciejewski (IBM), S. Luning (AMD) and E. Leobandung (IBM)
09:30   2417   Effect of Ion Implantation and Anneals on Fully-strained SiC and SiC:P Films using Multiple Characterization Techniques A. Madan, A. Madan, J. Li, Z. Ren (IBM), B. F. Yang (Advanced Micro Devices), E. C. Harley, T. N. Adam, R. Loesing, Z. Zhu, T. Pinto, A. Chakravarti (IBM), L. R. Black (AMD), D. J. Schepis, R. Takalkar, A. Dube (IBM) and J. W. Weijtmans (AMD)
09:50   2418   The Impact of Carbon on the Warpage of e-SiGe Wafers During Laser Anneal D. J. Riley, H. Bu, A. Jain and R. Khamankar (Texas Instruments)
10:10   2419   Growth and Thermal Stability of SiGe/Si Superlattices on Bulk Si and SOI Wafers J. Hartmann (CEA-LETI MINATEC)
10:30   2420   Simultaneous Optimization of the Material Properties, Uniformity and Deposition Rate of Polycrystalline CVD and PECVD Silicon-Germanium Layers for MEMS Applications G. Bryce, S. Severi and L. Haspeslagh (IMEC)
 

FET II. High Mobility Channel Devices

TimeAbs#Title and Authors
11:05   2421   Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita, Y. Moriyama, N. Sugiyama (MIRAI-ASET) and S. Takagi (Tokyo University)
11:35   2422   Elimination of Native Ge Dielectrics at Ge/High-k Dielectric Interfaces in Ge MOS Devices G. Lucovsky (NC State University)
12:05   2423   Mobilty Modeling in Ultra-Thin (UT) Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs T. Krishnamohan (Stanford University), A. Pham (3Technical University of Braunschweig, Germany), C. Jungemann (University of the Armed Forces, Munich, Germany), B. Meinerzhagen (3Technical University of Braunschweig, Germany) and K. Saraswat (Stanford University)
 

Processing I. Processing Si, SiGe, Ge, and Related Compounds

Co-Chair(s): E. Kasper and K. Nakagawa
TimeAbs#Title and Authors
13:40   2424   The Versatile use of SiGe for High-performance Devices E. Hijzen, J. Donkers, P. Meunier-Beillard, E. Saarnilehto and J. Sonsky (NXP Semiconductors)
14:10   2425   Integrating Selective Epitaxy in Advanced Logic & Memory Devices S. Kuppurao, Y. Kim, Y. Cho, S. Chopra, Z. Ye, E. Sanchez and S. Chu (Applied Materials, Inc.)
14:40   2426   HCl Selective Etch of Si1-xGex Versus Si for Silicon on Nothing and Multi Channel Devices V. Destefanis (STMicroelectronics), J. Hartmann (CEA-LETI MINATEC), F. Hüe (CEMES CNRS) and D. Bensahel (STMicroelectronics)
15:00   2427   Comparison between three Si1-xGex versus Si selective etching processes T. Salvetat (CEA LETI MINATEC), J. Hartmann (CEA-LETI MINATEC), S. Borel, O. Kermarrec, V. Destefanis and Y. Campidelli (CEA-LETI-Minatec)
15:20   2428   Etching Ge, GaAs and InGaAs: A Challenge in Semiconductor Processing S. Sioncke (Imec), D. Brunco (Intel), M. Meuris, J. Van Steenbergen, E. Vrancken and M. Heyns (imec)
 

Epitaxy I. Selective Growth of SiGe and In-situ Doping

Co-Chair(s): J. M. Hartmann and Yasuo Kunii
TimeAbs#Title and Authors
15:55   2429   Selective Epitaxial Growth of Si(Ge) for High Performance MOSFET Applications I. Mizushima (Toshiba Corporation, Semiconductor Company)
16:25   2430   SiGe Selective Epitaxy Morphology and Thickness Control for High Performance CMOS Technology J. R. Holt, E. C. Harley, T. N. Adam, S. Jeng, K. Tabakman (IBM), R. Pal (AMD), H. M. Nayfeh (IBM), L. R. Black (AMD), J. J. Kempisty (IBM), M. W. Stoker (Freescale), A. Dube and D. J. Schepis (IBM)
16:45   2431   Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes F. Gonzatti (CEA-LETI), J. Hartmann (CEA-LETI MINATEC) and K. Yckache (CEA-LETI)
17:05   2432   Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition S. Takeuchi, N. D. Nguyen, F. E. Leys, R. Loo, T. Conard, W. Vandervorst and M. Caymax (IMEC)
17:25   2433   Selective Polycrystalline Si Deposition on Epitaxial Si induced by B-Atomic Layer Doping Y. Yamamoto, K. Koepke, O. Fursenko, G. Weidner (IHP), J. Murota (Tohoku University) and B. Tillack (IHP, Frankfurt (Oder), Germany)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

SiGe, Ge, & Related Compounds Symposium (E15-E23) Posters presented as poster displays in Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village (LOCATION IN THE MAIN HILTON HAWAIIAN VILLAGE)

TimeAbs#Title and Authors
o Poster Presentations are the same as the Monday night Poster Session Talks (150 Minutes)
 

Wednesday, October 15, 2008

Room 305B, Level 3, Hawaii Convention Center

Strain II. Characterization of Strained Materials

TimeAbs#Title and Authors
08:30   2434   Electrical Activity of Dislocations and Defects in Strained Si and Ge Based Devices E. R. Simoen, G. Eneman, P. Verheyen, R. Loo, M. Bargallo Gonzalez and C. Claeys (IMEC)
09:00   2435   Noise Properties of High-Mobility, 80 nm Gate Length MOSFETs on Supercritical Virtual Substrates B. G. Malm (School of ICT), J. Hallstedt (Royal Institute of Technology KTH), P. Hellström (ICT/MAP) and M. Ostling (Royal Institute of Technology KTH)
09:20   2436   Observation of Crystalline Imperfections in Supercritical Thickness Strained Silicon on Insulator Wafers by Synchrotron X-ray Topography T. Shimura (Graduate School of Engineering), T. Inoue, Y. Okamoto, T. Hosoi (Graduate School of Engineering, Osaka University), H. Edo, S. Iida (Department of Physics, University of Toyama), A. Ogura (School of Science and Technology, Meiji University) and H. Watanabe (Graduate School of Engineering, Osaka University)
09:40   2437   Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction J. Li (IBM), A. Lamberti, A. Domenicucci, H. Utomo, N. Rovedo, Z. Luo, S. Fang, H. Ng (Micro-electronics-IBM), J. R. Holt, A. Madan (IBM), C. Lai (Chartered Semiconductor Manufacting Ltd.), J. Ku (Samsumng Electronics Co.), D. J. Schepis (IBM) and J. Han (Infineon Technologies)
10:00   2438   The Effect of Silicide Processing on Stress Reduction in Silicon Device Structures with Strained SiGe Elements I. Peidous (Applied Materials, Inc.) and P. Press (Advanced Micro Devices, Inc.)
 

Optoelectronics I. Si, SiGe, Ge and Related Compounds

Co-Chair(s): G. Masini
TimeAbs#Title and Authors
10:35   2439   Recent Performance of Ge/Si Receivers at 1310 nm M. Morse, O. Dosunmu, T. Yin, Y. Kang (Intel), G. Sarid, E. Ginsburg, R. Cohen and M. Zadka (Numonyx)
11:05   2440   High Performance Ge Devices for Electronic-Photonic Integrated Circuits J. Michel and J. Liu (Massachusetts Institute of Technology)
11:35   2441   Epitaxial Growth of Ge Thick Layers on Nominal and 6{degree sign}C off Si(001); Ge Surface Passivation by Si J. Hartmann (CEA-LETI MINATEC)
11:55   2442   Characteristics of Ge and SiGe pin Photodiodes Without Post-growth Annealing S. Park, S. Takita, R. Ichikawa, Y. Ishikawa (Univ of Tokyo) and K. Wada (Univ. of Tokyo)
12:15   2443   High-speed, Monolithic CMOS Receivers with Ge on Si Waveguide Photodetectors G. Masini, S. Sahni, B. Analui, G. Capellini, J. Witzens and C. Gunn (Luxtera, Inc.)
 

Epitaxy II. Modelling, Quantum Structures, and Si:C

Co-Chair(s): Roger Loo and Shawn Thomas
TimeAbs#Title and Authors
13:35   2444   A Multiscale Model of the Low-Temperature CVD of Si and ncSi C. Cavallotti (Politecnico di Milano)
14:05   2445   Epitaxial Growth of Si:C by Means of Gas Source Molecular Beam Epitaxy A. Yamada, H. Ishihara, K. Inoue and M. Konagai (Tokyo Institute of Technology)
14:35   2446   Massive Batch Selective Si and SiGe Epitaxial Deposition D. J. Meyer (Centrotherm Technologies), E. Suvar and F. Rohlfing (Centrotherm)
14:55   2447   SiGe Quantum Rings by Ultra-high Vacuum Chemical Vapor Deposition C. Lee (National Taiwan University), C. Lin (Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University), S. Lee (Institute of Materials Science and Engineering), P. Shushpannikov, R. Goldstein (Institute for Problems in Mechanics, Russian Academy of Sciences) and C. Liu (Department of Electrical Engineering and Graduate Institute of Electronic Engineering, National Taiwan University)
15:15   2448   Liquid Phase Epitaxy of SiGe/Si Nanoscale Islands: Morphology and Self-Assembling in the Near- and Far Non-Equilibrium Growth Limits M. Hanke (Martin-Luther-University Halle-Wittenberg), T. Boeck, A. Gerlitzke (Institute for Crystal Growth, Berlin, Germany), F. Syrowatka and F. Heyroth (Centre of Materials Science at the Martin-Luther-University, Halle, Germany)
 

Surfaces and Interfaces I. Growth and Defect Control

Co-Chair(s): S. Miyazaki and Dr. P. Lo G. Q.
TimeAbs#Title and Authors
15:50   2449   Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels A. Delabie, M. Caymax, F. Bellenger, G. Brammertz, T. Conard, M. Houssa, S. Sioncke (IMEC), S. Van Elshocht (IMEC vzw), M. Heyns, M. Meuris (IMEC), D. Brunco (Intel), J. L. Van Hemmen, W. Keuning, W. M. Kessels (TUEindhoven), V. Avanasiev and A. Stesmans (KULeuven)
16:20   2450   Interface and Defect Control for Group IV Channel Engineering A. Sakai, Y. Ohara, T. Ueda (Osaka University), E. Toyada, K. Izunome (Covalent Materials Co. Ltd.), S. Takeuchi (IMEC), Y. Shimura, O. Nakatsuka (Nagoya University), M. Ogawa (Ecotopia science institute, Nagoya university), S. Zaima (Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya university) and S. Kimura (JASRI/SPring-8)
16:50   2451   Fixed-Oxide-Charge Characterization by Photoreflec-tance Spectroscopy in HfO2 on Ge treated by Fluorine T. Kanashima (Osaka University), H. Lee (Osaka Univerisity), Y. Mori, H. Imajo and M. Okuyama (Osaka University)
17:10   2452   Enhanced Performance for Ge MOS Devices with High-k Gate Dielectrics through a Novel Post-gate CF4-plasma Treatment Process R. Xie, Z. Sun (National University of Singapore), M. Yu (Institute of Microelectronics Singapore), D. M. Lai (Institute of Materials Research and Engineering Singapore), L. Chan (Chartered Semiconductor Manufacturing, Ltd) and C. Zhu (National University of Singapore)
17:30   2453   Formation of Ge3N4/Ge Structures Using Nitrogen Radicals and Their Thermal Stability S. Oda (Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya university), H. Kondo (Graduate School of Engineering, Nagoya University), M. Ogawa (Ecotopia science institute, Nagoya university) and S. Zaima (Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya university)
 

Coral 1; Mid-Pacific Conference Center, Hilton Hawaiian Village

Workshop on Nanotechnology

Co-Chair(s): S. Koester
TimeAbs#Title and Authors
19:00 Workshop Mixer (30 Minutes)
19:30 Introduction - S. Koester (10 Minutes)
19:40   2454   Nanowires to Replace Planar CMOS? A. Thean (Freescale Semiconductor)
19:55   2455   Gate-All-Around Silicon Nanowire Devices: Are these the Future of CMOS? G. P. Lo (Institute of Microelectronics)
20:10   2456   Prospects for Top-Down Fabricated Uniaxial Strained Nanowire MOSFETs J. Hoyt (Massachusetts Institute of Technology), P. Hashemi and L. Gomez (MIT Microsystems Technology Laboratories)
20:25   2457   Opportunities for Group IV Nanowire Devices in Si CMOS Technology E. Tutuc (The University of Texas at Austin)
20:40   2458   III/V Nanowire FETs for CMOS? L. Wernersson (Lund University)
20:55 Discussion (30 Minutes)
 

Thursday, October 16, 2008

Room 305B, Level 3, Hawaii Convention Center

Surfaces and Interfaces II. Metal Contacts and High-k / Semiconductor Interfaces

Co-Chair(s): S. Zaima and K. Shiraishi
TimeAbs#Title and Authors
08:00   2459   Novel Metal-Germinade Contact Technology G. P. Lo (Institute of Microelectronics), K. Ang (Institute of Microelectronics, Singapore) and D. Kwong (Institute of Microelectronics Singapore)
08:30   2460   Schottky Barrier Height Extraction in Ohmic Regime: Contacts on Fully-Processed 200mm GeOI Substrates L. Hutin, C. Le Royer (CEA-LETI/MINATEC), C. Tabone, V. Carron (CEA-Leti MINATEC), V. Delaye (CEA-LETI/MINATEC), F. Nemouchi, F. Aussenac, L. Clavelier and S. Deleonibus (CEA-Leti MINATEC)
08:50   2461   Very High-k Tetragonal ZrO2 on Ge with GeO2 Passivating Interfacial Layer P. Tsipas (IMS, MBE Laboratory), S. Volkos, A. Sotiropoulos, G. Mavrou, S. Galata, Y. Panayiotatos (IMS, MBE Laboratory, NCSR Demokritos) and A. Dimoulas (National Center for Scientific Research DEMOKRITOS)
09:10   2462   Ab-Initio Molecular Dynamics Simulations of Properties of a-Al2O3/vacuum and a-ZrO2 /vacuum vs a-Al2O3/Ge(100)(2x1) and a-ZrO2 /Ge(100)(2x1) Interfaces E. Chagarov and A. C. Kummel (UCSD)
09:40   2463   Why and How Atom Intermixing Proceeds at Metal/Si Interfaces; Silicide Formation vs. Random Mixing T. Nakayama (Chiba University)
 

Epitaxy III. IV:IV Alloys Growth and Alternative Precursors

Co-Chair(s): M. Sakuraba and Yihwan Kim
TimeAbs#Title and Authors
10:15   2464   Chemical Vapor Deposition Epitaxy of Silicon-based Materials using Neopentasilane J. C. Sturm and K. Chung (Princeton University)
10:45   2465   Epitaxial Si-Ge-Sn Materials for Si-Based Optoelectronic Applications J. Kouvetakis (Arizona State University)
11:15   2466   Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing H. Yu, J. Park (Stanford University), A. Okyay (Bilkent University) and K. Saraswat (Stanford University)
11:35   2467   Selective Epitaxial Deposition of Ge on Si: Facet Formation and How to Avoid it G. Wang, F. E. Leys, R. Loo, M. Caymax (IMEC), D. Brunco (Intel), M. Meuris, W. Vandervorst and M. Heyns (imec)
11:55   2468   Selective Epitaxial Growth of Ge-on-Si for Photodiode Applications M. Kim, O. Olubuyide and J. Hoyt (Massachusetts Institute of Technology)
 

Optoelectronics II. Emitters/Modulators/QW

Co-Chair(s): G. Masini
TimeAbs#Title and Authors
13:30   2469   Ge Quantum Well Modulators on Si D. Miller (Stanford University)
14:00   2470   Ge dots in Optical Microcavities--A Possible Direction for Silicon-based Light Emitting Devices J. Xia, R. Tominaga, N. Usami and Y. Shiraki (Musashi Institute of Technology)
14:30   2471   Si/SiGe Bound-to-Continuum Quantum Cascade Lasers D. J. Paul (University of Glasgow), G. Matmon (University of Cambridge), L. Lever, Z. Ikonic and R. Kelsall (University of Leeds)
15:00   2472   Photocurrent of SiGe/Si Strained Multiple Quantum-Wells Grown by UHV-CVD T. Kim, S. Choi, T. Jeong, S. Kang and K. Shim (Chonbuk National University)
15:20   2473   Band-engineered Ge for Si-based Light Emitter X. Sun, J. Liu, L. Kimerling and J. Michel (Massachusetts Institute of Technology)
 

Processing II. Processing of Si, SiGe, Ge, and Related Compounds

TimeAbs#Title and Authors
15:55   2474   High Ge content SiGe alloys: Doping and Contact Formation E. Kasper (Uni Stgrt.), M. Oehme and J. Lupaca-Schomber (IHT, Uni Stuttgart)
16:25   2475   New Heating Method for Polycrystallization of Amorphous Si using Microwave Plasma Irradiation K. Nakagawa (University of Yamanashi)
16:55   2476   Low Temperature Boron Activation in Amorphous Ge for Three Dimensional Integrated Circuits (3D-ICs) using Ni-induced Crystallization J. Park (Stanford University), M. Tada (Device Platforms Research Laboratories, NEC Corporation), H. Yu, D. Kuzum, Y. Na and K. Saraswat (Stanford University)
17:15   2477   Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers J. Bouvier (STMicroelectronics), G. Bremond (Institut des Nanotechnologies de Lyon), B. Vandelle, F. Brossard and D. Dutartre (STMicroelectronics)
17:35   2478   Dry Etch Challenges in Gate All Around Devices for sub 32 nm Applications S. Barnola, C. Vizioz, S. Borel, P. Gautier (CEA-LETI-Minatec), C. Arvet (STM/CEA-LETI-Minatec), T. Chevolleau (CNRS-LTM), T. Ernst (CEA-LETI-Minatec), B. Guillaumot, N. Vulliet (STM/CEA-LETI-Minatec), C. Dupré (CEA-LETI-Minatec) and E. Bernard (STM/CEA-LETI-Minatec)
 

Friday, October 17, 2008

Lehua Suite; Kalia Conference Center, Hilton Hawaiian Village

Emerging Applications I. Novel Devices

TimeAbs#Title and Authors
08:30   2479   Spin-polarized Electron Transport in Silicon I. Appelbaum (U. Delaware)
09:00   2480   Formation of Si- and Ge-based Full-Heusler Alloy Thin Films using SOI and GOI Substrates for the Half-metallic Source and Drain of Spin Transistors Y. Takamura (Tokyo Institute of Technology), Y. Nagahama (ISEL, Tokyo Institute of Technology), A. Nishijima (Tokyo Institute of Technology), R. Nakane (The University of Tokyo) and S. Sugahara (Tokyo Institute of Technology)
09:20   2481   Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics Y. Shuto, M. Tanaka (The University of Tokyo) and S. Sugahara (Tokyo Institute of Technology)
09:40   2482   SiGe Tunnel FETs I. Eisele (Institute of Physics) and M. Schlosser (University of the German Federal Armed Forces Munich)
10:10   2483   Electrodeposition of Si-Ge Alloy and of Si and Ge Nanowires from an Ionic Liquid F. Endres, R. Al Salman and S. Zein El Abedin (Institute of Particle Technology)
10:30   2484   Phonon Transport and Thermoelectricity in Silicon Nanostructures H. Ryu, C. Ritz (University of Wisconsin-Madison), L. Klein, H. Hamann (IBM T.J. Watson Research Center), M. G. Lagally and M. Eriksson (University of Wisconsin-Madison)
10:50   2485   Enhanced Ferromagnetic Fe-rich Germanide Film Grown using Magnetron Sputtering Employing a Post-deposition Anneal A. S. Wong (Materials Growth Group, Institute of Materials Research and Engineering), G. Ho (Electrical and Computer Engineering Department, National University of Singapore) and D. Chi (Materials Growth Group, Institute of Materials Research and Engineering)
 

Related Materials I. SiC, Ge Compounds, and III-V Integration

Co-Chair(s): A. Reznicek and M. Bauer
TimeAbs#Title and Authors
11:25   2486   SiCP Selective Epitaxial Growth in Recessed Source/Drain Regions yielding to Drive Current Enhancement in n-channel MOSFET M. Bauer (ASM America), V. Machkaoutsan (ASM Belgium), D. Weeks, Y. Zhang, S. Thomas (ASM America), P. Verheyen, C. Kerner, F. Clemente, H. Bender, D. Shamiryan, R. Loo, T. Hoffmann, P. Absil and S. Biesemans (IMEC)
11:55   2487   Monolithic III-V/Si Integration E. A. Fitzgerald (MIT)
12:25   2488   Strain Loss in Epitaxial Si:C Films Induced by Phosphorus Diffusion B. Yang (Advanced Micro Devices, Inc.), J. De Souza, K. Saenger, S. Bedell (IBM T. J. Watson Research Center), A. Reznicek (IBM Research), T. N. Adam (IBM), M. Hopstaken (IBM T. J. Watson Research Center) and D. Sadana (IBM)
12:45   2489   Ge Interface Passivation Techniques and Their Thermal Stability D. Kuzum, T. Krishnamohan (Stanford University), A. Pethe (Intel), Y. Oshima, Y. Sun, J. McVittie, P. McIntyre and P. Pianetta (Stanford)
13:05   2490   Solid-Phase Epitaxial Regrowth of Phosphorus Implanted Amorphized Germanium E. R. Simoen (IMEC), A. Brugere (Minatec), A. Satta, B. Van Daele, B. Brijs, O. Richard, J. Geypen, M. Meuris and W. Vandervorst (IMEC)
 

HBT I. New Techniques, Performance Levels, and Applications

Co-Chair(s): M. Ostling and K. Washio
TimeAbs#Title and Authors
14:40   2491   SiGe:C BiCMOS Technologies for Automotive Radar Applications G. G. Fischer, S. Glisic and B. Heinemann (IHP)
15:10   2492   3D Integration Techniques Applied to SiGe Power Amplifiers R. M. Malladi, A. Joseph, P. Lindgren, W. Ni, D. Wang, M. Erturk and R. Previti-Kelly (IBM)
15:40   2493   SiGe HBT featuring fT > 600GHz at Cryogenic Temperature N. Zerounian, E. Ramirez Garcia, F. Aniel (IEF, Univ Paris-Sud, CNRS, UMR 8622), P. Chevalier, B. Geynet and A. Chantre (STMicroelectronics)
16:00   2494   3-D Regional Transit Time Analysis of SiGe HBTs on Thin-Film SOI M. Bellini, J. Cressler (Georgia Institute of Technology), M. Turowski (CFD Research Corporation), G. Avenier, A. Chantre and P. Chevalier (STMicroelectronics)
16:20   2495   Ultra-Low-Power SiGe HBTs using High-Precision RT-CVD Epitaxial Growth K. Oda, M. Miura (Hitachi Ltd.), H. Shimamoto (Renesas Northern Japan Semiconductor, Inc.) and K. Washio (Hitachi Ltd.)