214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E2 - Atomic Layer Deposition Applications 4

Dielectric Science and Technology
 

Monday, October 13, 2008

Room 306B, Level 3, Hawaii Convention Center

Emerging ALD Applications I

Co-Chair(s): Ana Londergan and Stacey Bent
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10   1877   Organic- Inorganic Hybrid Materials by ALD O. Nilsen, K. Klepper, H. Nielsen and H. Fjellvåg (University of Oslo)
10:40   1878   Opportunities of ALD for Thin Film Solid Oxide Fuel Cells F. B. Prinz (Stanford University)
11:10   1879   Leading Edge Atomic Layer Deposition Applications G. Sundaram, D. Monsma and J. Becker (Cambridge Nanotech)
11:40   1880   Fabrication and Characterization of Lead Sulfide Thin Films by Atomic Layer Deposition N. P. Dasgupta, S. P. Walch and F. B. Prinz (Stanford University)
 

High-k Gate Devices

Co-Chair(s): Stefan De Gendt and Christophe Detavernier
TimeAbs#Title and Authors
14:00   1881   Gate Voltage Control of Spin Precession in InGaAs Based Mesoscopic Ring Array with Al2O3 Gate Insulator M. Kohda, J. Takagi and J. Nitta (Tohoku university)
14:30   1882   Electrical Properties of high-k ALD HfO2 deposited on strained Si Layers Epitaxially grown on Si0.8Ge0.2/Si Substrates P. R. Shrestha, D. Gu, K. Tapily and H. Baumgart (Old Dominion University)
14:50   1883   Fabrication of Self-aligned Enhancement-mode n-channel GaAs MOSFETs Employing a Wet Clean Process for GaAs Substrates D. Shahrjerdi (University of Texas at Austin), D. Garcia-Guteirrez (SVTC) and S. Banerjee (Univ of Texas at Austin)
15:10   1884   Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-k Gate Stacks A. Toriumi (The University of Tokyo), T. Nabatame (MIRAI-ASET) and H. Ota (AIST)
 

ALD Precursor Development

Co-Chair(s): Jeff Elam and Robert Clark
TimeAbs#Title and Authors
16:00   1885   Design and Development of ALD Precursors for Microelectronics R. K. Kanjolia (SAFC Hitech)
16:30   1886   Novel Zirconium precursors for Atomic Layer Deposition of ZrO2 films T. Chen, T. M. Cameron, S. D. Nguyen, G. T. Stauf, D. W. Peters, L. Maylott, W. Li, C. Xu, J. F. Roeder, M. Hilgarth (Advanced Technology Materials, Inc.), J. Niinisto, K. Kukli, M. Ritala and M. Leskela (University of Helsinki, Finland)
16:50   1887   Development of ALD Precursors for Semiconductor Devices S. Wada (ADEKA Corp.)
17:20   1888   Ti Source Precursors for Atomic Layer Deposition of TiO2, STO and BST R. Katamreddy, V. Omarjee, B. Feist, C. Dussarrat and C. Dussarrat (Air Liquide Inc)
 

Tuesday, October 14, 2008

Room 306B, Level 3, Hawaii Convention Center

Progress in ALD Equipment for Advanced Applications

Co-Chair(s): Oscar van der Straten and A. Toriumi
TimeAbs#Title and Authors
08:50   1889   Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics : Precursor delivery, Materials and Processes Z. Karim, Y. Senzaki, S. Ramanathan, J. Lindner, H. Silva, M. Dauelsberg, N. Lee and T. Seidel (AIXTRON)
09:20   1890   Batch Atomic Layer Deposition of HfO2 and ZrO2 Films Using Cyclopentadienyl Precursors P. R. Fischer, D. Pierreux, G. Dilliway (ASM Belgium), O. Rouault (ASM Europe), J. Sirugue (ASM Belgium) and P. M. Zagwijn (ASM Europe B.V.)
 

Emerging ALD Applications II

Co-Chair(s): Jeff Elam and Ola Nilsen
TimeAbs#Title and Authors
10:00   1891   Atomic Layer Deposition as a Synthesis Method for Inorganic Membranes W. J. DeSisto (University of Maine)
10:30   1892   Synthesis of Zirconia and Hafnia Tubes by Atomic Layer Deposition (ALD) Template Method T. M. Abdel-Fattah (Christopher Newport University), D. Gu, H. Baumgart and G. Namkoong (Old Dominion University)
10:50   1893   Controlled Synthesis of 3D Nanostructures Using Proximity-Field Nanopatterning Lithography and Graded Temperature ALD R. K. Grubbs (Sandia National Laboratories)
11:20   1894   Oxidative Removal of Self-Assembled Monolayers for Selective Atomic Layer Deposition W. Lee, C. Chao, X. Jiang, J. Hwang, S. Bent and F. B. Prinz (Stanford University)
11:40   1895   Formation of Semiconductor-Metal Core-Shell Nanoparticles using Electrochemical Atomic Layer dDposition C. Gu, C. Shannon, H. Xu and M. Park (Auburn University)
 

ALD of Metal Films

Co-Chair(s): Stacey Bent and Stefan De Gendt
TimeAbs#Title and Authors
14:00   1896   PEALD Ru Liner Conformality and Cu Trench Fill Characteristics O. Van der Straten (IBM Research), J. Wynne, T. Vo, J. Maniscalco (IBM Systems & Technology Group), T. Nogami (IBM Research), I. Ali, S. Chiang, J. Ren and P. Ma (Applied Materials)
14:30   1897   Morphology of Electrodeposited Cu on 300 mm PEALD Ru Substrates J. Kelly (IBM Corporation), T. Vo (IBM Systems & Technology Group), O. Van der Straten (IBM Research), Q. Huang (IBM Corporation), B. Baker O'Neal, X. I. Shao (IBM), S. Chiang and J. Dukovic (Applied Materials)
14:50   1898   Remote Plasma and Thermal ALD of Platinum and Platinum Oxide Films H. C. Knoops, A. Mackus, M. Donders, M. C. Van de Sanden (Eindhoven University of Technology), P. Notten (Philips Research) and W. M. Kessels (TUEindhoven)
15:10   1899   Comparative Studies on Thermal and Plasma Enhanced Atomic Layer Deposition of Co focusing on Area Selectivity H. Lee and H. Kim (POSTECH (Pohang University of Science and Technology))
15:30   1900   Characteristics of Tantalum Carbo-nitride Thin Films Deposited with Atomic Layer Deposition Process M. Song and S. Rhee (POSTECH)
 

Poster Introduction

Co-Chair(s): Ana Londergan and Stefan De Gendt
TimeAbs#Title and Authors
16:00 Discussion (60 Minutes)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session

Co-Chair(s): Jeff Elam and Stefan De Gendt
TimeAbs#Title and Authors
o   1901   Investigation on Structural and Electrical Properties of High-k Dielectrics Prepared by Furnace Atomic Layer Deposition with Precursor Cross-flow C. Hsieh, S. Tsai, W. Hsu, C. Yang, C. Wu and S. Shih (Nanya Technology Corp.)
o   1902   Two Step Annealing of Iridium Thin Films prepared by Plasma-Enhanced Atomic Layer Deposition S. Kim, S. Kwon and S. Kang (KAIST)
o   1903   Atomic Layer Deposited IrO2-TiO2 Thin Film Resistor for the Thermal Inkjet Printheads S. Kwon, S. Kim, S. Jepong (KAIST), K. Kim (Pusan National University) and S. Kang (KAIST)
o   1904   Atomic Layer Deposition of CuAlxOy as a Transparent Ternary Oxide S. Lee, B. Lee, S. Kim, T. Chung, Y. Lee, C. Kim and K. An (Korea Research institute of Chemical Technology)
o   1905   Enhanced Photonic Band Gap and Defect Structure of Diamond Based Photonic Crystals using ALD Hafnium Oxide Coating M. Thitsa, D. Gu, H. Baumgart and S. Albin (Old Dominion University)
o   1906   Photoluminescence of GaQ3-Al2O3 Core-Shell Nanowires C. Wang (National Tsing Hua University), C. Kei (Instrument Technology Research Center, National Applied Research Laboratories, Hsinchu 300, Taiwan), Y. Tao (Institute for Microstructure Sciences, National Research Council of Canada) and T. Perng (Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan)
o   1907   Study on Monitoring the Decomposition State of Metal-Organic Precursor for ALD/CVD J. Yun, S. Kang and Y. Shin (KRISS)
o   1908   Characteristics of TiSiO Films for Varistors J. Lim, S. Yun and H. Kim (ETRI)
o   1909   Effects of Film Thickness and Preferred Orientation on the Dieletric Constants of Hf-Aluminate Films Deposited by PEALD H. Moon, D. Joo (KAIST), P. Park (Samsung Electronics Co., Ltd.) and S. Kang (KAIST)
o   1910   Atomic Layer Deposition of Metal and Metal Oxide Nanostructures I. M. Povey, A. O'Mahony, F. Dillon, M. Bardosova (Tyndall National Institute) and M. E. Pemble (Tyndall National Institute, University College Cork)
o   1911   Real Time In-Situ Probing of Atomic Layer Deposition Processes using Infrared and Near Infrared Spectroscopy A. O'Mahony, I. M. Povey (Tyndall National Institute) and M. E. Pemble (Tyndall National Institute, University College Cork)
o   1912   Atomic Vapor Deposited Tantalum Carbo-nitride (TaCxNy) Film for n-channel Metal-oxide Semiconductor (nMOS) Gate Electrode S. Kim, M. Song and S. Rhee (POSTECH)
 

Wednesday, October 15, 2008

Room 306B, Level 3, Hawaii Convention Center

ALD Processing and Characterization

Co-Chair(s): Oscar van der Straten and Zia Karim
TimeAbs#Title and Authors
08:50   1913   Thermal Versus Plasma-Enhanced ALD: Growth Kinetics and Conformality C. Detavernier, D. Deduytsche, J. Musschoot and J. Dendooven (Ghent University)
09:20   1914   Plasma-assisted ALD of Al2O3 at Low Temperatures: Reaction Mechanisms and Material Properties E. Langereis, M. Bouman, J. Keijmel, M. C. Van de Sanden (Eindhoven University of Technology) and W. M. Kessels (TUEindhoven)
09:40 Intermission (20 Minutes)
10:00   1915   Atomic Layer Deposition of Hf-based Materials in Semiconductor Applications L. Nyns, A. Delabie, M. Heyns, G. Pourtois (IMEC), S. Van Elshocht (IMEC vzw), C. Vinckier (KULeuven), S. De Gendt (IMEC), J. Swerts and J. Maes (ASM Belgium)
10:30   1916   Comparison of Nanomechanical Behavior of the Amorphous and Crystalline Phases of ALD HfO2 K. Tapily (Old Dominion University), J. Jakes, D. Stone (University of Wisconsin-Madison), P. R. Shrestha, D. Gu, H. Baumgart and A. Elmustafa (Old Dominion University)
10:50   1917   Effect of Impurities Doping on the GST Film by ALD Method for PCRAM Applications K. Lee, J. Lee, J. Park, D. You and T. Seo (IPS, Ltd.)
11:10   1918   Carboxylic Acids as Oxygen Supplying Agents for Atomic Layer Deposition of High-k Thin Films E. Rauwel (University of Aveiro), F. Ducroquet (IMEP, INPG-Minatec), P. Rauwel (University of Aveiro, Department of Ceramics and Glass Eng), M. Willinger (University of Aveiro, Department of Chemistry, CICECO), I. Matko (LMGP, INPG-Minatec), D. Kiselev (University of Aveiro, Department of Ceramics and Glass Eng) and N. Pinna (University of Aveiro, Department of Chemistry, CICECO)
11:30   1919   High-K Gate Dielectric Structures by Atomic Layer Deposition for the 32nm and Beyond Nodes R. D. Clark, S. Consiglio, C. Wajda, G. Leusink (TEL Technology Center America, LLC), T. Sugawara, H. Nakabayashi (TEL LPDC FEOL Group), H. Jagannathan, L. F. Edge (IBM), P. Jamison, V. Paruchuri (IBM @ Albany Nanotech), R. Iijima, M. Takayanagi (Toshiba America Electronic Components Inc.), B. Linder, J. Bruley, M. Copel (IBM Research Division) and V. Narayanan (IBM)
12:00 Symposium Concluding Remarks (10 Minutes)