214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E3 - High k Dielectric Constant Materials and Gate Stacks

Dielectric Science and Technology/Electronics and Photonics
 

Monday, October 13, 2008

Room 304A, Level 3, Hawaii Convention Center

Metal Work Function

Co-Chair(s): Hiroshi Iwai, Jamie Schaeffer
TimeAbs#Title and Authors
10:00 Introductory Remarks (10 Minutes)
10:10   1920   Work Function and Effective Oxide Thickness Engineering via Alloying of Metal Gate Electrodes J. Schaeffer (Freescale Semiconductor), M. Raymond (AMD), D. Gilmer (Sematech International), R. Gregory, B. Taylor, J. Jiang, D. Triyoso, R. Hegde and S. Samavedam (Freescale Semiconductor)
10:40   1921   Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation N. Mise, T. Morooka, T. Eimori, T. Ono, Y. Nara and Y. Ohji (Semiconductor Leading Edge Technologies, Inc.)
11:10   1922   Engineering High Dielectric Constant Materials for Band-Edge CMOS Applications H. Jagannathan, V. Narayanan and S. Brown (IBM)
11:30   1923   Fundamental Aspects of Effective Work Function Instability of Metal/Hf-based High-k Gate Stacks H. Watanabe (Graduate School of Engineering, Osaka University), S. Yoshida, Y. Kita (Osaka University), T. Hosoi (Graduate School of Engineering, Osaka University), T. Shimura (Graduate School of Engineering), K. Shiraishi (University of Tsukuba), Y. Nara (Semiconductor Leading Edge Technologies, Inc.) and K. Yamada (Waseda University)
 

Reliability

Co-Chair(s): Durga Misra, Gennadi Bersuker
TimeAbs#Title and Authors
14:00   1924   Universal Correlation Between Mobility and NBTI on Advanced High-k/Metal Gate Stacks G. Reimbold (CEA-LETI / MINATEC)
14:30   1925   Reliability Assessment of High-k Gate Dielectrics on Si-passivated p-GaAs under Dynamic and AC Stress M. K. Bera (Indian Institue of Technology, Kharagpur), G. Dalapati (2Institute of Materials Research and Engineering,) and C. Mahata (Indian Institue of Technology,Kharagpur)
14:50   1926   Hot Carrier Reliability of ALD HfSiON Gated MOSFETs with Different Compositions H. Chen (Department of Electronic Engineering), S. Chen (National Taipei University of Technology), C. Liu, F. Chiu (Ming Chuan University) and H. Huang (National Taipei University of Technology)
15:10   1927   Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface - H. Ota (AIST), A. Hirano, Y. Watanabe, N. Yashuda, K. Iwamoto, K. Okada (MIRAI-ASET), S. Migita (MIRAI), T. Nabatame (MIRAI-ASET) and A. Toriumi (The University of Tokyo)
15:30   1928   Trapping in 1nm EOT High-k Dielectrics L. Pantisano, M. Zahid, R. Degraeve and G. Groeseneken (IMEC)
 

Interfaces, Traps, and Defects I

Co-Chair(s): Samares Kar, Gilles Reimbold
TimeAbs#Title and Authors
16:10   1929   Interface Engineering of a Metal/ High-k/ Ge Layered Structure by Water Vapor Discharge K. Muraoka (Toshiba Corporation)
16:40   1930   Interface Study in a "Metal / High-k" Gate Stack: Tantalum Nitride on Hafnium Oxide C. Gaumer (STMicroelectronics), E. Martinez (CEA-LETI), S. Lhostis (STMicroelectronics), C. Wiemer and M. Perego (CNR-INFM MDM National Laboratory)
17:00   1931   Extraction of Trap Parameters for High-Κ Gate Dielectric Stacks S. Rawat and S. Kar (Indian Institute of Technology, Kanpur)
17:20   1932   Dielectric and Interface Properties of TiO2/HfSiO/SiO2 Layered Structures Fabricated by in situ PVD Method H. Arimura (Osaka University), Y. Naitou (National Institute of Advanced Science and Technology), N. Kitano (Canon ANELVA Corporation), Y. Oku (Graduate School of Engineering, Osaka University), N. Yamaguchi, M. Kosuda (Canon ANELVA Corporation), T. Hosoi (Graduate School of Engineering, Osaka University), T. Shimura (Graduate School of Engineering) and H. Watanabe (Graduate School of Engineering, Osaka University)
17:40   1933   Interfacial and Electrical Characterization of HfO2-Gated MOSCs and MOSFETs by C-V and Gated-Diode Method S. Chen (National Taipei University of Technology), H. Chen (Department of Electronic Engineering), F. Chiu, C. Liu (Ming Chuan University), Z. Hsieh, H. Huang (National Taipei University of Technology) and H. Hwang (National Tsing-Hua University)
 

Tuesday, October 14, 2008

Room 304A, Level 3, Hawaii Convention Center

High K Gate Stack Characteristics

Co-Chair(s): Hiroshi Iwai, Robert Wallace
TimeAbs#Title and Authors
08:30   1934   Application of X-ray Metrology for Rapid Development of High-k Dielectrics P. Hung (Sematech), T. Böscke (Qimonda), M. Wormington, D. K. Bowen (Bede Scientific Inc), P. Lysaght, P. Kirsch, H. Tseng and R. Jammy (Sematech)
08:50   1935   Electric Properties of CeOX /La2O3 Stack as Gate Dielectric in Advanced MOSFET Technology M. Kouda, K. Tachi, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii (Tokyo Institute of Technology), A. Chandorkar (I.I.T.Bombay), T. Hattori and H. Iwai (Tokyo Institute of Technology)
09:10   1936   Electrical and Chemical Properties of the HfO2/SiO2/Si stack: Impact of HfO2 Thickness and Thermal Budget E. Martinez, C. Leroux, N. Benedetto (CEA-LETI), C. Gaumer (STMicroelectronics), M. Charbonnier, C. Licitra (CEA-LETI), S. Lhostis (STMicroelectronics) and F. Fillot (CEA-LETI)
09:30 Intermission (20 Minutes)
09:50   1937   Annealing-temperature Dependence of Compositional Depth Profile and Chemical Structures of LaOx/ScOx/Si and ScOx/LaOx/Si Interfacial Transition Layer H. Nohira, Y. Takenaga (Musashi Institute of Technology), K. Kakushima, P. Ahmet, K. Tsutsui and H. Iwai (Tokyo Institute of Technology)
10:10   1938   Characterization of High-k Gate Dielectric Stacks on Silicon and High Mobility Substrates S. Stemmer (University of California, Santa Barbara)
 

Gate Stack Processing I

Co-Chair(s): Sven Van Elshocht, Roy Gordon
TimeAbs#Title and Authors
10:40   1939   Study of Kinetic Behaviors of GeO in GeO2/Ge Stacks K. Kita, C. Lee, T. Nishimura, K. Nagashio and A. Toriumi (The University of Tokyo)
11:10   1940   Atomic Layer Deposition of High-k/metal Gate Stack MOSFET-devices on Strained Silicon-on-Insulator Substrates C. Henkel, S. Abermann, O. Bethge (Vienna University of Technology), M. Reiche (Max-Planck-Institute for Microstructure physics) and E. Bertagnolli (Vienna University of Technology)
11:30   1941   0.5 nm EOT MOS Structure with TaSix/W Stacked Gate Electrode K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii (Tokyo Institute of Technology), A. Chandorkar (I.I.T.Bombay), T. Hattori and H. Iwai (Tokyo Institute of Technology)
11:50   1942   Growth and Characterization of Alternative Gate Dielectrics by Molecular-Beam Epitaxy L. F. Edge (IBM), W. Tian, V. Vaithyanathan (Pennsylvania State University), T. Heeg (Pennsylvania State Univesity), D. Schlom (Pennsylvania State University), D. Klenov (University of California), S. Stemmer (University of California, Santa Barbara), J. Wang (University of Texas) and M. J. Kim (University of Texas at Dallas)
 

Alternate Substrates I

Co-Chair(s): Dolf Landheer, Koji Kita
TimeAbs#Title and Authors
14:00   1943   High-k Dielectrics for CMOS Beyond 22nm R. M. Wallace (University of Texas at Dallas)
14:30   1944   Atomic Layer Deposited Lanthanum-(Zirconate/Aluminate) Based High-K Dielectric Stacks For Future CMOS-Technology S. Abermann, C. Henkel, O. Bethge and E. Bertagnolli (Vienna University of Technology)
14:50   1945   Effect of Ultrathin Si Passivation Layer for Ge MOS Structure with La2O3 Gate Dielectric J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori and H. Iwai (Tokyo Institute of Technology)
15:10   1946   Gate Dielectrics on High Mobility Semiconductors A. Dimoulas (National Center for Scientific Research DEMOKRITOS), Y. Panayiotatos, G. Mavrou, S. Galata (IMS, MBE Laboratory, NCSR Demokritos), P. Tsipas (IMS, MBE Laboratory), A. Sotiropoulos (IMS, MBE Laboratory, NCSR Demokritos), C. Rossel, D. Webb, C. Andersson, M. Sousa, C. Marchiori and J. Fompeyrine (IBM Research GmbH, ZRL)
15:40 Intermission (20 Minutes)
 

Memory

Co-Chair(s): Samares Kar
TimeAbs#Title and Authors
16:00   1947   Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films C. Lin and Y. Kuo (Texas A&M University)
16:20   1948   Thermally Stable Hf-silicate with Modification of Si Doping and Thermal Budget in MIM Capacitors P. Tzeng, T. Wu, C. Wang, C. Lin and L. Lee (ITRI)
 

Integration

TimeAbs#Title and Authors
16:40   1949   Organic Mask Removal Assessment for 32nm Fully Depleted SOI Technology with TiN-metal Gate on HfO2 L. Lachal, J. Chiaroni (CEA), E. Lajoinie, O. Louveau (STMicroelectronics) and P. Lavios (CEA)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster

Co-Chair(s): Samares Kar, Dolf Landheer
TimeAbs#Title and Authors
o   1950   Charge Re-trapping Process in Oxide-Nitride-Al2O3 (ONA) Structures D. Kim, W. Cho, D. Kwak, J. Oh (Dongguk University), W. Kim (Doowon Technical College) and H. Cho (Dongguk University)
o   1951   Improved Lower Electrode Oxidation of High-k TiCeO Metal-Insulator-Metal Capacitors by Using Dual Plasma Treatment C. Cheng, H. Hsu, A. Chin and C. Chou (National Chiao-Tung University)
o   1952   Evaluation of MOCVD Grown Niobium Nitride Films as Gate Electrode for Advanced CMOS Technology T. Thiede, H. Parala (Ruhr-University Bochum), K. Reuter, G. Passing, S. Kirchmeyer (H. C. Starck GmbH), J. Hinz, M. Lemberger, A. Bauer (Fraunhofer Institute of Integrated Systems and Device Technology) and R. Fischer (Ruhr-University Bochum)
o   1953   MOCVD of Niobium Nitrides and Oxy-Nitrides using an All-Nitrogen-Coordinated Precursor: Thin-film Deposition and Mechanistic Study D. Bekermann (Ruhr-University Bochum), D. Barreca (ISTM-CNR and INSTM, Department of Chemistry, Padova University), A. Devi (Inorganic Chemistry II, Organometallics & Materials), A. Gasparotto (Department of Chemistry, Padova University and INSTM) and R. Fischer (Ruhr-University Bochum)
o   1954   Novel Highly Volatile MOCVD Precursors for Ta2O5 and Nb2O5 Thin Films T. Yotsuya, H. Chiba, T. Furukawa, T. Yamamoto, K. Inaba (TOSOH Corporation), K. Tada (Sagami Chemical Research Center), T. Suzuki, K. Fujimoto (TOSOH Corporation), H. Funakubo (Tokyo Institute of Technology), T. Yamakawa (Sagami Chemical Research Center) and N. Oshima (TOSOH Corporation)
o   1955   Dielectric Properties of SrTiO3 Thin Films on SrRuO3 Seed Prepared by Plasma-enhanced Atomic Layer Deposition J. Ahn (Korea Advanced Institute of Science and Technology), J. Kim, J. Kim, J. Roh (Hynix Semiconductor Incorporated) and S. Kang (KAIST)
o   1956   A Simple Solution of the WSix Peeling Issue in SRCAT (Sphere-shaped Recess-Channel-Array Transistor) H. Chae, S. Lee (SamSung Institute of Technology(SSIT)), T. Park, H. Lee, K. Lee, J. Seo and K. Choi (Samsung Electronics)
o   1957   High Performance Ir/TiPrO/TaN Capacitors for Analog ICs Application C. C. Huang (Electrical and Computer Engineering), C. Cheng, A. Chin and C. Chou (National Chiao-Tung University)
o   1958   Fabrication of High-k/Si Structure using Metal Deposition followed by Oxidation K. Kuroiwa, T. Ueno, M. Hasumi, Y. Iwazaki and Y. Oniki (Tokyo University of Agriculture and Technology)
 

Wednesday, October 15, 2008

Room 304A, Level 3, Hawaii Convention Center

Alternate Substrates II

Co-Chair(s): Dolf Landheer, Athanasios Dimoulas
TimeAbs#Title and Authors
08:30   1959   Al2O3/ZrO2/Al2O3 High-k Dielectric Stacks on Germanium Substrates Grown by Atomic Layer Deposition at High and Low Temperatures O. Bethge, S. Abermann, C. Henkel and E. Bertagnolli (Vienna University of Technology)
08:50   1960   Comparison between Direct-Contact HfO2/Ge and HfO2/GeO2/Ge Stack Structures Y. Abe (Musashi Institute of Technology), N. Miyata and T. Yasuda (Institute of Advanced Industrial Science and Technology)
09:10   1961   Plasma Nitridation of HfO2 Gate Dielectric on p-GaAs Substrates G. K. Dalapati, A. Sridhara (Institute of Materials Research and engineering), A. S. Wong (Materials Growth Group, Institute of Materials Research and Engineering), C. Chia and D. Chi (Institute of Materials Research and Engineering)
 

Interfaces, Traps, and Defects II

Co-Chair(s): Samares Kar, Heiji Watanabe
TimeAbs#Title and Authors
09:50   1962   Identifying Performance-Critical Defects in the High-k/Metal Gate Stacks G. Bersuker (SEMATECH)
10:20   1963   Interface Properties Improvement of Ge/Al2O3 and Ge/GeO2/Al2O3 Gate Stacks using Molecular Beam Deposition F. Bellenger, C. Merckling (IMEC), J. Penaud (Riber), M. Houssa, M. Caymax, M. Meuris, K. De Meyer and M. Heyns (imec)
10:40   1964   Interface Characterization of CeO2-Gated MOSFETs Using Gated Diode Method and Charge Pumping Technique F. Chiu (Ming Chuan University), H. Chen (Department of Electronic Engineering), C. Liu (Ming Chuan University), S. Chen and H. Huang (National Taipei University of Technology)
11:00   1965   Physical Characterization of the Metal/High-k Layer Interaction upon Annealing T. Conard, A. Franquet, W. Vandervorst (IMEC), M. Reading, J. Van den Berg (University of Salford), S. Van Elschocht, T. Schram, C. Adelmann and S. De Gendt (IMEC)
11:20   1966   Modelling of Dielectrics and Traps in High-Κ Gate Dielectric Stacks and Equivalent Circuit Representation S. Kar and S. Rawat (Indian Institute of Technology, Kanpur)
11:40   1967   Electrical Characterization of Metal gate/High-k Dielectrics on GaAs Substrate V. Budhraja, N. Rahim (njit) and D. Misra (New Jersey Institute of Technology)
12:00   1968   Bonding and Electronic Structure at the Oxide/III-V Semiconductor Interface J. Shen (University of California, San Diego) and A. C. Kummel (UCSD)
 

Gate Stack Processing II

Co-Chair(s): Sven Van Elshocht, Lisa edge
TimeAbs#Title and Authors
14:00   1969   Effects of Low Temperature O2 Treatment on the Electrical Characteristics of Amorphous LaAlO3 Films by Atomic Layer Deposition Y. Liu, H. Kim, J. Wang (Harvard University), H. Li (Rohm and Haas Electronic Materials) and R. G. Gordon (Harvard University)
14:30   1970   Impact of High Pressure O2 Annealing on Amorphous LaLuO3/Ge MIS Capacitors T. Tabata, C. Lee, K. Kita and A. Toriumi (The University of Tokyo)
14:50   1971   Tuning of Material and Electrical Properties of Strontium Titanates using Process Chemistry and Composition R. Katamreddy, V. Omarjee (Air Liquide Inc), B. Feist (Air Liquide.com), C. Dussarrat (Air Liquide Inc), M. Singh and C. Takoudis (University of Illinois at Chicago)
15:10   1972   Effect of Rare-Earth Doping and Nitrogen Passivation Treatments on the Properties of Uultra-thin Hafnia Films S. Ramanathan, A. Karthikeyan (Harvard University), S. Govindarajan and P. Kirsch (Sematech)
 

Electrical Characteristics

Co-Chair(s): Durga Misra, Susanne Stemmer
TimeAbs#Title and Authors
15:40   1973   Capacitance-Voltage (CV) Characterization of GaAs/High-k Oxide Interfaces G. Brammertz, H. Lin, K. Martens, C. Merckling (IMEC), J. Penaud (Riber), A. Alian, S. Sioncke, W. Wang, M. Meuris, M. Caymax and M. Heyns (imec)
16:10   1974   Application of Micro Corona-Kelvin Technique to Non-contact Monitoring of High-k MOS Capacitors A. Belyaev, M. Wilson, J. Lagowski, L. Jastrzebski, A. Findlay (Semiconductor Diagnostics, Inc.), J. Price, C. Park, M. Hussain, G. Bersuker and P. Lysaght (SEMATECH)
16:30   1975   Simulation of Leakage Currents Through Thin Dielectrics G. Kozłowski, J. Dąbrowski, G. Lupina and H. Müssig (IHP)
16:50   1976   Annealing Effect on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process K. Yamabe (University of Tsukuba), K. Murata (National Institute of Materials Science), T. Hayashi, T. C. Tamura (University of Tsukuba), M. Sato (Semiconductor Leading Edge Technologies), A. Uedono, K. Shiraishi (University of Tsukuba), N. Umezawa, T. Chikyow (National Institute of Materials Science), H. Watanabe (Graduate School of Engineering, Osaka University), Y. Nara, Y. Ohji (Semiconductor Leading Edge Technologies, Inc.), S. Miyazaki (Hiroshima University), K. Yamada (Waseda University) and R. Hasunuma (University of Tsukuba)
17:20 Concluding Remarks (10 Minutes)