214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E4 - High Purity Silicon 10

Electronics and Photonics
 

Monday, October 13, 2008

Room 303B, Level 3, Hawaii Convention Center

Crystal Growth and Wafer Processing

Co-Chair(s): C. Claeys and P. Stallhofer
TimeAbs#Title and Authors
10:00   1977   450 mm Silicon Wafers Challenges - Wafer Thickness Scaling M. Goldstein (Intel Corp) and M. Watanabe (NuFlare Technology, INC.)
10:40   1978   Uphill Drift of Vacancies and Self-Interstitials in Silicon Crystal Growth V. Voronkov and R. Falster (MEMC)
11:20   1979   Electromagnetic Pumping of a Silicon Melt H. Korb (Korb Consulting, LLC)
 

Insulating, Epitaxial and Solar Cell Substrates

Co-Chair(s): H. Korb and P. Stallhofer
TimeAbs#Title and Authors
14:00   1980   The Development of Semi-insulating Silicon Substrates for Microwave Devices D. M. Jordan (Oxford University), H. Haslam (University of Oxford), R. Falster (MEMC), K. Mallik (University of Oxford) and P. R. Wilshaw (Oxford University)
14:40   1981   Improvement of Surface Roughness in SOI Wafer Fabrication Using Low-Angle Forward-Reflected Neutral Beam Etching T. Min, B. Park, S. Kim (Sungkyunkwan University), S. Kang, J. Park, W. Lim (Sungkyun Advanced Institute of Nano technology (SAINT)), G. Yeom, J. Bae (Sungkyunkwan University) and C. Yi (LG Production Research Institute)
15:00   1982   A Theoretical and Experimental Study of Stresses Responsible for the SOI Wafer Warpage S. Dhumal (MEMC Electronic Materials Inc.) and S. Kommu (MEMC Electronic Materials, Inc.)
15:20   1983   Epitaxial CVD Film Deposition Fluid-Dynamics Simulation Incorporating Detailed Reactor Geometry J. A. Pitney and S. Kommu (MEMC Electronic Materials, Inc.)
15:40 Intermission (20 Minutes)
16:00   1984   Imaging Techniques for the Analysis of Silicon Wafers and Solar Cells K. Bothe, K. Ramspeck, D. Hinken and R. Brendel (ISFH)
16:40   1985   Solid Phase Crystallization (SPC) of a-Si Thin Film Induced by a Novel Approach for Photovoltaic Devices T. Kim, P. Kumar, K. Siebein and R. Singh (University of Florida)
17:00   1986   Texturization of Large Area Crystalline Silicon Solar Cells Using Electrochemical Method C. Gao (School of Electronic Information Engineering), M. Chang, B. Yang, W. Sun and C. Qu (Department of Optical Electronic Information)
 

Tuesday, October 14, 2008

Room 303B, Level 3, Hawaii Convention Center

Defects in Silicon

Co-Chair(s): R. Falster and P. Wilshaw
TimeAbs#Title and Authors
08:00   1987   Ab-Initio Modeling of Point Defects, Impurities and Diffusion in Silicon W. Windl (The Ohio State University)
08:40   1988   Di-interstitial in Silicon: Electronic Properties and Interaction with Oxygen V. Markevich, A. Peaker (University of Manchester), S. Lastovskii, L. Murin (Joint Institute of Solid State and Semiconductor Physics, Minsk) and L. Dobaczewski (Institute of Physics, Polish Academy of Sciences, Warsaw)
09:00   1989   Analysis of the Nucleation Kinetics of Oxide Precipitates in Czochralski Silicon G. Kissinger, D. Kot, J. Dabrowski, V. Akhmetov (IHP), A. Sattler and W. Von Ammon (Siltronic AG)
09:20   1990   Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon P. Viscor (Nanion Limited), O. Andersen, T. Clausen (Topsil Semiconductor Materials A/S), P. A. Ellsmore (Nanion Limited) and L. Jensen (Topsil Semiconductor Materials A/S)
09:40 Intermission (20 Minutes)
 

Hydrogen in Silicon and Germanium

Co-Chair(s): W. Windl and G. Kissinger
TimeAbs#Title and Authors
10:00   1991   What do We Know About Hydrogen-Induced Thermal Donors? E. R. Simoen (IMEC), Y. Huang (Baoding Tian Wei Solar Films Co), Y. Ma (IMEC), J. Lauwaert, P. Clauws (University of Ghent), J. Rafi (CNM (IMB-CSIC)), A. Ulyashin (University of Oslo) and C. Claeys (IMEC)
10:40   1992   Formation and Annihilation of Hydrogen Related Donor States in Proton Implanted and Subsequently Plasma Hydrogenated N-Type Float Zone Silicon R. Job (University of Hagen), F. Niedernostheide, H. Schulze and H. Schulze (Infineon Technologies AG)
11:00   1993   Hydrogen and Helium implantation in Silicon and Germanium M. David, J. Barbot, F. Pailloux, D. Babonneau, S. Rousselet, L. Pizzagalli, M. Beaufort, M. Drouet (University of Poitiers/CNRS UMR 6630), E. R. Simoen and C. Claeys (IMEC)
11:40   1994   Cathodoluminescence Assessment of Annealed Silicon and a Novel Technique for Estimating Minority Carrier Lifetime in Silicon K. Fraser (University of Oxford), R. Falster (MEMC) and P. R. Wilshaw (Oxford University)
 

Metallic and Organic Comtamination and Gettering

Co-Chair(s): E. Simoen and R. Falster
TimeAbs#Title and Authors
14:00   1995   Metallic Impurities in Mono and Multi-crystalline Silicon and Their Gettering by Phosphorus Diffusion M. B. Shabani, T. Yamashita and E. Morita (SUMCO Corporation)
14:40   1996   Nickel Contamination in Silicon: Electrical Activity Study and Microscopy Analysis M. Polignano, D. Codegoni, A. Riva, D. Caputo and V. Privitera (Numonyx)
15:00   1997   Electrical Properties of Lightly Contaminated Copper in Pure Silicon X. Yu (NC State University), J. Lu and G. Rozgonyi (North Carolina State University)
15:20   1998   The Role of Vacancies and Oxygen for Setting up an Efficient Getter for Cu and Ni in Silicon Wafers D. Kot, G. Kissinger (IHP), W. Haeckl, A. Sattler and W. Von Ammon (Siltronic AG)
15:40   1999   Copper Precipitation in Germanium-Doped Czochralski Silicon W. Wang, D. Yang, X. Ma, Y. Zeng and D. Que (Zhejiang University)
16:00 Intermission (20 Minutes)
16:20   2000   Failure Mechanism by Organic Contaminants in Si Device Fabrication K. Kim, J. Kim, K. Lee, H. Kang, B. Lee (Siltron, Inc.) and S. Park (POSTECH)
16:40   2001   Study of Organic Contaminants Analysis using TD-GCMS on Silicon Wafer Surfaces T. Taira (Sumika Chemical Analysis Service,LTD), Y. Shiramizu (NEC Electronics Corporation), M. Watanabe (NuFlare Technology, INC.) and N. Kawai (Renesas Technology Corp.)
17:00   2002   Measurements of Nitrogen Diffusion at Low Temperatures and Its Interaction with Dislocations in Silicon C. Alpass, J. Murphy (University of Oxford) and P. R. Wilshaw (Oxford University)
17:20   2003   Theoretical Analysis of Thermally Induced Structural Deformation and Relaxation of Silicon Wafer B. H. Kumar, S. Roy (Indian Institute of Technology (IIT) - Delhi), J. A. Pitney, T. Torack (MEMC Electronic Materials, Inc.), S. Dhumal (MEMC Electronic Materials Inc.) and S. Kommu (MEMC Electronic Materials, Inc.)
 

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session

Co-Chair(s): C. Claeys and R. Falster
TimeAbs#Title and Authors
o   2004   An investigation of Material Design for Gettering K. Matsukawa (Renesas technology), K. Shirai and H. Katayama-Yoshida (Osaka university)
o   2005   Vacancy Dynamics in Growing Czochralski Germanium Crystals P. Spiewak, K. Kurzydlowski (Warsaw University of Technology), J. Vanhellemont (Ghent University) and I. Romandic (Umicore EOM)
o   2006   Quantum Properties of Defects in Silicon Films D. E. Milovzorov (FLUENS TECHNOLOGY GROUP)
o   2007   Gas-filled Rod-shaped Cavity Formation Along the C-axis in Helium Implanted Gallium Nitride J. Barbot, F. Pailloux, M. David, L. Pizzagalli (University of Poitiers/CNRS UMR 6630), E. Oliviero (Centre de Spectrométrie Nucléaire et de Spectrométrie) and G. Lucas (CRPP-EPFL)
 

Wednesday, October 15, 2008

Room 303B, Level 3, Hawaii Convention Center

Lifetime Analysis and Characterization

Co-Chair(s): P. Stallhofer and M. Shabani
TimeAbs#Title and Authors
09:00   2008   Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers M. Wilson, A. Savtchouk, I. Tasarov, J. D'Amico, P. Edelman and J. Lagowski (Semiconductor Diagnostics, Inc.)
09:20   2009   300mm Wafer Stain Formation by Spin Etching K. Sato, S. Mashimoto and M. Watanabe (SEZ Japan, Inc.)
09:40 Intermission (20 Minutes)
10:00   2010   Chromium(VI)-free Defect Etching Solutions for Application on Engineered Silicon Substrates J. Maehliss (Goethe-University, Frankfurt), A. Abbadie, F. Brunier (SOITEC, Bernin) and B. Kolbesen (Goethe-University, Frankfurt)
10:20   2011   EIS Characterization of Ultra High Purity, Float Zone Single Crystal Silicon P. Viscor (Nanion Limited), O. Andersen, T. Clausen (Topsil Semiconductor Materials A/S), P. A. Ellsmore (Nanion Limited), L. Jensen (Topsil Semiconductor Materials A/S) and J. Schiotz (Technical University of Denmark)
10:40   2012   New Yield-Impacting Polishing Induced Defects (PID) and A Method to Identify Them for Polished Si Substrates H. Suh (KLA-Tencor Corporation), B. Moon (Hynix Semiconductor Inc.), K. Kim (KLA-Tencor Corp), J. Kim (Hynix Semiconductor Inc.), S. Venkat (KLA-Tencor Corp), S. Lee (Hynix Semiconductor Inc.), W. Shen (KLA-Tencor Corp), Y. Shin (Hynix Semiconductor Inc.), J. Park (KLA-Tencor Corp), J. An (Hynix Semiconductor Inc.), S. Seo (KLA-Tencor Corp) and S. Park (Hynix Semiconductor Inc.)
11:00   2013   Estimation of Radiation-Induced Complex Concentration in CZ-Si by IR Absorption Spectroscopy Y. Yonezawa (Osaka Prefecture University), N. Inoue, Y. Takubo (Tokyo University of Agriculture and Technology), Y. Goto (Vehicle Engineering Group, Toyota Motor Co.), T. Sugiyama (Power Device Div., Toyota Central R&D Labs., Inc.) and Y. Kawamura (Osaka Prefecture University)
11:20   2014   The Way of Making Monoisotopic FZ-Si Crystals for the New kg Mass Unit Standard and for Basic Research H. P. Riemann (Leibniz-Institute for Crystal Growth), N. Abrosimov, B. Hallmann-Seiffert (Leibnitz-Institute for Crystal Growth), A. Kaliteevski, O. Godisov (Centrotech St. Petersburg), A. Gusev, A. Bulanov (ICHPS Nizhny Novgorod), H. Pohl (VITCON) and P. Becker (PTB Braunschweig)
11:40   2015   Photoresist Removal from Si Wafer Using Boron-Doped -Diamond Anode Advanced Oxidation Process C. Gao (School of Electronic Information Engineering), M. Chang, B. Yang, W. Sun and C. Qu (Department of Optical Electronic Information)