214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E7 - Nitrides and Wide-Bandgap Semiconductors for Sensors, Photonics, and Electronics 9

Electronics and Photonics/Sensor
 

Wednesday, October 15, 2008

Room 308A, Level 3, Hawaii Convention Center

Electronic Devices

Co-Chair(s): K. Shiojima and M. Goorsky
TimeAbs#Title and Authors
08:00   2077   GaN MOSFETs with Large Current and Normally-off Operation Y. Niiyama, H. Kambayashi, S. Ootomo, N. Ikeda, T. Nomura and S. Kato (The Furukawa Electric, Co., Ltd.)
08:40   2078   11.9 W Output Power at 4 GHz from 1 mm AlGaN/GaN HEMT M. Krämer (NXP Semiconductors), F. Karouta, J. J. Kwaspen (Technische Universiteit Eindhoven), M. Rudzinski, P. K. Larsen (Radboud University Nijmegen), E. M. Suiker, P. A. De Hek (TNO Defence, The Hague, Netherlands), T. Rödle, I. Volokhine (NXP Semiconductors) and L. M. Kaufmann (Technische Universiteit Eindhoven)
09:00   2079   Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs F. Karouta (Technische Universiteit Eindhoven), M. Krämer (NXP Semiconductors), J. J. Kwaspen (Technische Universiteit Eindhoven), A. Grzegorczyk, P. Hageman (Radboud University Nijmegen), B. Hoex (Technische universiteit Eindhoven), W. M. Kessels (TUEindhoven), J. Klootwijk, E. Timmering (Philips, High Tech Campus, Eindhoven, Netherlands) and M. Smit (Technische Universiteit Eindhoven)
09:20   2080   AlGaN/GaN Transistors and Circuits J. Bardwell, T. Lester, H. Tang (National Research Council), B. Surridge, A. Harrison and A. Lau (Gain Microwave)
 

Materials and Characterization

Co-Chair(s): E. B. Stokes and T. Kikkawa
TimeAbs#Title and Authors
10:00   2081   Computational Study for Growth Mechanism of GaN on Graphite A. Ishii and H. Asano (Tottori University)
10:20   2082   Growth and Characterization of GaN with Extremely High Hole Concentration G. Namkoong (Old Dominion University), E. Trybus, W. Doolittle (Georgia Institute of Technology), D. Look (Wright State University) and T. Seong (Korea University)
10:40   2083   Investigation on Structural, Optical, and Magnetic Properties for Undoped and Mg-doped GaN Layers Implanted with Mn+ (5 and 10 at.%) Y. Shon, S. Lee, T. Kang (Dongguk University) and E. Kim (Hanyang University)
11:00   2084   Solution GaN Growth at Near Atmospheric Pressure B. N. Feigelson (SAIC, Naval Research Laboratory), J. Hite (Naval Research Laboratory), M. Murthy (George Mason University, Naval Research Laboratory), J. Freitas and J. Tischler (Naval Research Laboratory)
11:20   2085   Morphological Comparison Study of ZnTe by Various Electrochemical Deposition Methods Y. Hwang and K. Paeng (Yonsei University)
11:40 Intermission (20 Minutes)
12:00 Intermission (120 Minutes)
14:00   2086   Epitaxial Deposition of SiC onto 4H SiC using a Hollow Cathode R. J. Soukup, N. Ianno, J. Huguenin-Love, N. Lauer (University of Nebraska) and Z. Hubicka (Academy of Sciences of the Czech Republic)
14:20   2087   Enhanced Spectroscopic Properties at 1.5um in Er3+/Yb3+ -Activated SiO2-SiC Nanocomposites Fabricated by rf-Sputtering C. E. Goyes (Pontificia Universidad Javeriana), M. Ferrari, A. Chiasera (CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Group), G. Righini (CNR, Department of Materials and Devices - CNR-IFAC, N. Carrara Inst. Appl. Physics), F. Fonthal (Universidad Autonoma de Occidente) and M. De los Rios (Universidad del Quindío, Laboratorio de Optoelectrónica)
 

Optoelectronics and Sensors

Co-Chair(s): D. Bohr and Y. Sano
TimeAbs#Title and Authors
14:00   2088   Hybrid Dye-Sensitized Solar Cell Selectively Sensitized by Two Different Dyes T. Nishimura, Y. Fujita (Kyushu Institute of Tecnology), F. Inakazu, S. Pandey (Kyushu Institute of Technology), Y. Yamaguchi, M. Kohno (Nippon Steel Chemical Company Limited) and S. Hayase (Kyushu Institute of Technology)
14:20   2089   New Multilayered Transparent Conducting Oxide Substrates for Dye-Sensitized TiO2 Solar Cells J. Kim (National Renewable Energy Laboratory), J. Noh, K. Hong (Seoul National University), A. Halverson, K. Zhu, N. Neale and A. Frank (National Renewable Energy Laboratory)
14:40   2090   Investigation of TiO2/dye Interface and Effect of Co-Adsorbate on Their Implication on Voc in Dye Sensitized Solar Cells S. S. Pandey, S. Sakaguchi (Kyushu Institute of Technology), Y. Yamaguchi (Nippon Steel Chemical Company Limited) and S. Hayase (Kyushu Institute of Technology)
15:00   2091   Dye Sensitized Solar Cells with Charge Carrier Paths Consisting of Porous Alumina Film/Conductive Polymer/Ionic Liquid Composite Films F. Inakazu, T. Kougo, S. Sakaguchi, S. Sakaguchi, S. Hayase and S. Hayase (Kyushu Institute of Technology)
15:20 Intermission (20 Minutes)
15:40   2092   Polarity Inverted GaN for Photonic Crystal Biosensor Applications R. P. Tompkins, J. Nightingale, S. Yeldandi, H. Yalamanchili, B. Hamza, J. Kinard, K. Jo, J. Dawson, X. Cao, A. Timperman, L. Hornak, D. Korakakis and T. Myers (West Virginia University)
16:00   2093   Label-free In Situ Selection of DNA-Molecules using GaN Nanowires Based Extended-Gate FET Sensor A. Ganguly, C. Chen (National Taiwan University), K. Chen (Institute of Atomic and Molecular Sciences, Academic Sinica) and L. Chen (National Taiwan University)
16:20   2094   High Performance GaN-based Light-emitting Diodes with Geometric GaN Shaping Structure C. Liao and Y. Wu (National Chiao Tung University)