214th ECS Meeting - Honolulu, HI

October 12 - October 17, 2008

PROGRAM INFORMATION
 

E8 - Nonvolatile Memory and Its Evolution

Electronics and Photonics
 

Tuesday, October 14, 2008

Coral Exhibit Hall, Mid-Pacific Conference Center, Hilton Hawaiian Village

Poster Session

Co-Chair(s): Yoshiyuki Suda and Yoshihiro Sugiyama
TimeAbs#Title and Authors
o   2095   Modulation of the Charge Transfer Rate by an Organic Linker for Hybrid Silicon-Molecular Device Applications R. Barattin, G. Delapierre, T. Pro, J. Buckley, B. De Salvo and F. Vinet (CEA)
o   2096   Resistive Random Access Memory Based on RF-Sputtered Aluminium Oxide Film B. Nahlovskyy, N. Tsujii, S. Nigo, J. Lee, S. Kato (National Institute for Materials Science), R. Grill (Charles University in Prague), H. Kitazawa and G. Kido (National Institute for Materials Science)
o   2097   Memory Device Based on Si/CeO2/SiO2 Thin Film Structure D. E. Milovzorov (FLUENS TECHNOLOGY GROUP)
o   2098   ZnO-based Nonvolatile Memory Thin-film Transistors with Polymer Ferroelectric Single Gate Insulator G. Lee, M. Oh, K. Lee, K. Lee and S. Im (YONSEI University)
o   2099   Non-Volatile Memory Characterization of Metal-Oxide Nano-Crystal Distributed in BPDA-PDA Polyimide Insulator Layer D. Lee, S. Kim, E. Kim (Hanyang University), J. Shin, W. Cho (Kwangwoon University) and Y. Kim (Hanyang University)
o   2100   Novel Nanocrystal Flash Memory by the Sol-gel Method C. Wu (Ins. of Nanotechnology and Dep. Mat. Sci. Eng., National Chiao Tung Univ.), F. Ko (National Chiao Tung Uni.), P. Liu (Dep. of Electro. Eng., Feng Chia Univ.), Y. Tsai (Ins. of Nanotechnology and Dep. Mat. Sci. Eng.,National Chiao Tung Univ.), C. Yeh and W. Yang (Dep. of Electro. Eng., Feng Chia Univ.)
o   2101   The Characteristics of Al/SiNX/a-Si /SiON/Si Structure using a-Si Thin Films as a Charge Trap Layer J. Cho, H. Son (Sungkyunkwan University), S. Jung (Sungkuynkwan University), B. Choi (Sungkyunkwan University) and J. Yi (Sungkuynkwan University)
 

Wednesday, October 15, 2008

Room 302B, Level 3, Hawaii Convention Center

Magnetoresistive and Other Related RAMs

Co-Chair(s): Hideo Ohno
TimeAbs#Title and Authors
08:00   2102   MgO-based Magnetic Tunnel Junctions for MRAM Mg Post-oxidation Process F. Ernult, Y. Nagamine, K. Nishimura, Y. Otani and S. Yamagata (Canon ANELVA)
08:30   2103   Critical Aspects of Chemical Etch Patterning of Magnetic Tunnel Junction-Based MRAM E. J. O'Sullivan and D. Abraham (IBM TJ Watson Research Center)
08:50   2104   Evaluation of Characteristic Parameters of MgO Barrier Based Magnetic Tunnel Junctions with CoFeB/Ru/CoFeB Synthetic Ferrimagnetic Free Layers H. Hasegawa, S. Ikeda (Research Institute of Electrical Communication, Tohoku University), J. Hayakawa, K. Miura (Advanced Research Laboratory, Hitachi, Ltd.), R. Sasaki (Research Institute of Electrical Communication, Tohoku University), K. Ito, H. Takahashi (Advanced Research Laboratory, Hitachi, Ltd.) and H. Ohno (Tohoku University)
09:10   2105   TMR Logic: Nonvolatile Logic Circuit Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions T. Hanyu (Tohoku University)
09:40 Intermission (20 Minutes)
10:00   2106   High-speed MRAM for Embedding in SoC N. Ishiwata, T. Sugibayashi and N. Kasai (NEC)
10:20   2107   High Stability of Biased-Toggle MRAM with Obtuse Architecture and DNP Writing Scheme C. Hung, Y. Lee, K. Shen, M. Tsai and M. Kao (ITRI)
10:40   2108   Study of a Spin Torque Transfer MRAM with Perpendicular Magnetization TMR Elements as a High Density Non-volatile Memory H. Yoda (Toshiba), T. Kishi, T. Nagase, M. Yoshikawa, E. Kitagawa, T. Daibou, K. Nishiyama, T. Kai, N. Shimomura, M. Nakayama, M. Amano, H. Aikawa, S. Takahashi, S. Ikegawa, M. Nagamine, J. Ozeki (Toshiba Corporation), S. Yuasa (Nanoelectronics Research Institute, AIST), Y. Nakatani (The University of Electro-Communications), M. Oogane, Y. Ando (Tohoku University), Y. Suzuki (Osaka University), T. Miyazaki and Y. Ando (Tohoku University)
 

CNT FET and Flash Memories

Co-Chair(s): Yoshiyuki Suda
TimeAbs#Title and Authors
11:10   2109   Mass-Fabrication of Voltage-Programmable Non-Volatile Carbon Nanotube Memory Devices U. Schwalke and L. Rispal (TU Darmstadt)
11:30   2110   Understanding Improved TANOS Retention by Material Analysis of the SixNy Trapping Layer A. Rothschild, G. Van den bosch, L. Breuil, A. Cacciato, H. Dekkers, E. Sleeckx, T. Conard, B. Brijs and J. Kittl (IMEC)
 

Phase Change RAMs

Co-Chair(s): Norikatsu Takaura
TimeAbs#Title and Authors
14:00   2111   Phase Change Random Access Memory at 45 nm and Beyond R. Zhao, L. Shi, T. Chong, H. Yang, C. Tan, J. Huang, K. Lim, W. Ng, L. Ng (Data Storage Institute) and B. Zhao (Institute of Microelectronics)
14:30   2112   Electrodeposition of SbTe Alloys for Phase Change Device Applications Q. Huang, A. Kellock, S. Raoux, R. Shelby and C. Cabral (IBM Corporation)
14:50   2113   Preparation of Ge-doped SbTe Material Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Patterns S. Kikuchi, N. Fukuda, Y. Nishioka, I. Kimura, J. Takehito, Y. Yoshida, Y. Kokaze, T. Murayama, Y. Morikawa and K. Suu (ULVAC,inc.)
 

Conductive Bridging RAM and Other Related Technologies

TimeAbs#Title and Authors
15:10   2114   The Evolution of Ionic Memory M. N. Kozicki (Arizona State University)
15:40   2115   Nonvolatile Resistance Switching Effect Using Simple Metal Nanogap Junction Y. Naitoh and T. Shimizu (National Institute of Advanced Industrial Science and Technology)
16:00   2116   Resistive Switching Solid State Brain Neocortex-like Device for Advanced Non-volatile Logic Applications Y. Sasago, M. Terao, M. Kinoshita, K. Ono, K. Kurotsuchi, R. Takemura, Y. Fujisaki (Hitachi, Ltd, Central Research Laboratory) and N. Takaura (Hitachi, Ltd.)
16:20 Intermission (20 Minutes)
 

Oxide and Charge Trap Resistance RAMs

Co-Chair(s): Yoshihiro Sugiyama
TimeAbs#Title and Authors
16:40   2117   SiO2/SiOx/3C-SiC/n-Si(001) Nonvolatile Resistance Memory Formed with One-Stage Oxidation Process Y. Yamaguchi, H. Hasegawa and Y. Suda (Tokyo University of Agriculture and Technology)
17:00   2118   High Speed Unipolar Switching with Very Low Reset Current Resistance RAM (RRAM) for Non-Volatile Memory Application S. Ahn, M. Lee, B. Kang, K. Kim, C. Lee (Samsung Advanced Institute of Technology), Y. Park (SAIT) and G. Stefanovich (Samsung Advanced Institute of Technology)
17:20   2119   Impedance Spectroscopy of Resistance Switching CaCu3Ti4O12 Films Derived by Sol-Gel Process Y. Shen, C. Ho (Electronics) and B. Chiou (Institute of Electronics, National Chiao-Tung University)
17:40   2120   Printed Organic Memory Devices K. K. Lian (University of Toronto), J. Zhang (Motorola.com) and H. Wang (University of Toronto)