216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

E1 - Analytical Techniques for Semiconductor Materials and Process Characterization 6

Electronics and Photonics
 

Monday, October 5, 2009

Room A353, Level 02 - Red

Defects and Impurities I

Co-Chair(s): B.O. Kolbesen and C.Claeys
TimeAbs#Title and Authors
09:00 Introductory Remarks (10 Minutes)
09:10   1945   Defect Analysis in Solar Cell Silicon by Photoluminescence Spectroscopy and Topography M. Tajima (Institute of Space and Astronautical Science / JAXA) and H. Sugimoto (Inst. Space & Astro. Sci. / JAXA)
09:50   1946   New Modes of Fast Fourier Impedance Spectroscopy Applied to Solar Materials Characterization and Semiconductor Pore Etching J. Carstensen and H. Foell (University of Kiel)
10:30   1947   Advanced Application of Resistivity and Hall Effect Measurements to Characterization of Silicon V. V. Voronkov (MEMC Electronic Materials), G. I. Voronkova (Institute of Rare Metals) and R. Falster (MEMC Electronic Materials)
10:50   1948   Detection of Vacancy Distributions by Decoration with Hydrogen R. Job (University of Hagen), F. Niedernostheide, H. Schulze (Infineon Technologies AG) and H. Schulze (Infineon Technologies Austria AG)
11:30   1949   Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices M. Uematsu, M. Naganawa, Y. Shimizu, K. M. Itoh (Keio University), K. Sawano, Y. Shiraki (Tokyo City University) and E. E. Haller (University of California at Berkeley)
11:50   1950   Electrical Characterization of Deep-Lying Donor Layers Created by Proton Implantation and Subsequent Annealing in n-Type Float Zone and Czochralski Silicon V. Komarnitskyy and P. Hazdra (Czech Technical University in Prague)
12:10   1951   Comparison of Evaluation Criteria for Efficient Gettering of Cu and Ni in Silicon wafers D. Kot, G. Kissinger (IHP), A. Sattler and W. Von Ammon (Siltronic AG)
 

Defects and Impurities II

Co-Chair(s): B.O. Kolbesen and L.Fabry
TimeAbs#Title and Authors
14:00   1952   New Approaches in Wet Chemical Etching for Defect Delineation in Silicon Substrates J. Maehliss, R. Hakim (Goethe-University), F. Brunier (SOITEC S.A.) and B. Kolbesen (Institute fur Anorganische und Analytische Chemie)
14:40   1953   Delineation of Crystal Defects with a Modified FS Cr-free Etching Solution on SOI Materials T. Sanetti (goethe university frankfurt), J. Maehliss (Goethe-University), S. Schaitmann, H. Hoeynck, S. Inan (Goethe-University, Institute for Inorganic and Analytical Chemistry, Max-von-Laue-Strasse 7, 60438 Frankfurt, Germany) and B. Kolbesen (Institute fur Anorganische und Analytische Chemie)
15:00   1954   Copper Decoration and Etching for Delineation of Crystal Defects in Thick SOI Materials H. Idrisi, S. Riedmüller, J. Zoller (Goethe University Frankfurt) and B. Kolbesen (Institute fur Anorganische und Analytische Chemie)
15:20   1955   Characterization of Structural Defects in Silicon and SOI Wafers by Means of Laser Scattering Tomography V. A. Monier (Institut Matériaux Microélectronique Nanosciences de Provence), L. Capello, O. Kononchuk (Soitec; Parc technologique des fontaines 38190 Bernin France) and B. Pichaud (IM2NP , UMR 6242 CNRS, Aix-Marseille Université; Faculté des Sciences et Techniques de St Jérôme ; F-13397 ; Marseille)
 

Surfaces, interfaces and thin films I

Co-Chair(s): L. Fabry and H. Föll
TimeAbs#Title and Authors
16:00   1956   Metrology for Nanoelectronics: Challenges and Solutions W. Vandervorst (IMEC)
16:40   1957   Considerable Improvement of Depth Resolution in Auger Sputter Depth Profiling of Polycrystalline Thin Films Using In-situ Sample Preparation Methods U. Scheithauer (Siemens)
17:20   1958   Semiconductor Thin Film Characterization with AC Surface Photovoltage E. Tsidilkovski (Semilab USA)
17:40   1959   Comparison of Silicon Surface Preparation Methods for Measurement of Minority Carrier Lifetime Using the Microwave Photoconductive Decay Couples with Continuous Corona Charge T. Pavelka (Semilab Co. Ltd.), A. Pap, P. Kenesei, M. Varga, M. Tallian (Semilab Co. Ltd), G. Borionetti, G. Guaglio (MEMC Electronic Materials Spa), M. Pfeffer (Fraunhofer IISB) and E. R. Don (Semilab Co. Ltd)
 

Tuesday, October 6, 2009

Room A353, Level 02 - Red

Surfaces, interfaces and thin films II

Co-Chair(s): W. Vandervorst and U. Scheithauer
TimeAbs#Title and Authors
08:00   1960   The Application of Differential Hall Effect Continuous Anodic Oxidation Technique for Ultra Shallow Structures S. Prussin and J. Reyes (University of California, Los Angeles)
08:20   1961   A DLTS study of Pt/Al2O3/InxGa1-xAs Capacitors E. R. Simoen, G. Brammertz, J. Penaud, C. Merckling, D. Lin, W. Wang and M. Meuris (IMEC)
08:40   1962   Charge Trapping in HfYOx Gate Dielectrics on Strained-Si B. Majhi (IIT Kgaragpur), C. Mahata and C. Maiti (IIT Kharagpur)
09:00   1963   Quantitative Strain Estimation Using C-V Characteristics of Strained Si MOS Capacitors M. Inagaki and S. Matsumoto (Keio University)
09:20   1964   Probing the Strain States in Nanopatterned Strained SOI O. Moutanabbir, M. Reiche, N. Zakharov, A. Hähnel, W. Erfurth (Max Planck Institute of Microstructure Physics), F. Naumann, M. Petzold (Fraunhofer for Mechanics of Materials), M. Holt, J. Maser (Center for Nanoscale Materials, Argonne National Laboratory) and U. Goesele (Max Planck Institute of Microstructure Physics)
09:40 Intermission (20 Minutes)
10:00   1965   High-Resolution EELS Measurements for the Mapping of Direct Bandgap Semiconductors G. Kothleitner (Graz University of Technology) and B. Schaffer (UK SuperSTEM, Daresbury Laboratory)
10:40   1967   Confinement Effect on CdTe C. Frausto Reyes (Centro de Investigaciones en Óptica A.C.), J. R. Molina-Contreras (Instituto Tecnológico de Aguascalientes), H. Pérez Ladrón de Guevara, C. Medel Ruiz (Universidad de Guadalajara, Centro Universitario de los Lagos) and Y. López Álvarez (Instituto Tecnológico de Aguascalientes)
11:00   1968   Application of Fractional-Derivative-Spectrum Methods for Optical Analyses of Si and GaAs Semiconductors W. Rzodkiewicz (Institute of Electron Technology), M. Kulik (Institute of Physics UMCS), E. Papis, A. Szerling (Institute of Electron Technology) and J. Szade (Institute of Physics Silesian University)
11:20   1969   The Technique to Characterize Reversible and Irreversible Domain Motions in Ferroelectric Thin Films in a Large Time Scale A. Jiang (Fudan University)
 

Technology and devices

Co-Chair(s): R. Job and H.J. Schulze
TimeAbs#Title and Authors
14:00   1970   Controlling Copper ECD Processes by Early Fault Detection and Diagnosis Using In-situ Electrochemical Sensor Coupled with Pattern Recognition Chemometrics A. Jaworski, H. Wikiel and K. Wikiel (Technic, Inc.)
14:20   1971   Studies on Galvanic Corrosion on Floating and Grounded Bondpads in Wafer Fabrication Y. Hua, L. Ping, T. Qinghua and N. Rao (Chartered Semiconductor)
14:40   1972   Investigation on Particle Generation Mechanism during Dichlorosilane-Based WSi Deposition Process M. Oh, J. Kim, J. Kim (Samsung Electonics) and T. Kim (Sungkyunkwan University)
15:00   1973   Junction Leakage Due To Recombination-Generation At Gate, Trench and Buried Oxide Interfaces: A STI Gated-Diode Study Y. Liu and V. Koldyaev (Innovative Silicon)
15:20   1974   Characterization and Modeling of the Electrical Behavior and Threshold Voltage of the Nanocrystalline GZO Delta-doped ZnO TFTs S. Hsiao, K. Liu, H. Chiang, L. Su, L. Peng and J. Huang (National Taiwan University)
 

ANNA Ia (Joint research and networking activities)

Co-Chair(s): M. Bersani and B. Beckhoff
TimeAbs#Title and Authors
16:00   1975   Nanolayer Characterisation by Reference-free X-ray Fluorescence Analysis with Synchrotron Radiation M. Kolbe, B. Beckhoff, M. Krumrey (Physikalisch-Technische Bundesanstalt), M. Reading, J. Van den Berg (University of Salford), T. Conard and S. De Gendt (IMEC)
16:20   1976   Si Wafer Analysis of Light Elements by TXRF S. Sasamori, F. Meirer, N. Zoeger (Atominstitut, Vienna University of Technology), C. Streli (Atominstitut, Vienna Universtiy of Technology), P. Kregsamer, S. Smolek (Atominstitut, Vienna University of Technology), C. Mantler (Siltronic AG) and P. Wobrauschek (Atominstitut, Vienna University of Technology)
16:40   1977   Assessing Various Analytical Techniques with Different Lateral Resolution by Investigating Spin-coated Inorganic Contamination on Si Surfaces B. Beckhoff (Physikalisch-Technische Bundesanstalt), A. Nutsch, R. Altmann (Fraunhofer IISB), G. Borionetti (MEMC Electronic Materials SpA), C. Pello (MEMC), M. Polignano, D. Codegoni, S. Grasso, E. Cazzini (Numonyx), M. Bersani, P. Lazzeri, S. Gennaro (Fondazione Bruno Kessler), M. Kolbe (Physikalisch-Technische Bundesanstalt), M. Mueller (Physikalisch Technische Bundesanstalt), P. Kregsamer (Atominstitut, Vienna University of Technology) and F. Posch (Atominstitut Vienna)
17:00   1978   Characterization of Organic Contamination during Semiconductor Manufacturing Processing Employing Near Edge X-Ray Absorption Fine Structure Spectroscopy M. Müller, B. Beckhoff (Physikalisch-Technische Bundesanstalt), P. Bedana, G. Borionetti, A. Corradi (MEMC Electronic Materials SpA), L. Frey (Fraunhofer IISB), G. Guerinoni (MEMC Electronic Materials SpA), A. Leibold, M. Otto and A. Nutsch (Fraunhofer IISB)
17:20   1979   Comparability of TXRF Systems at Different Laboratories A. Nutsch (Fraunhofer IISB), B. Beckhoff (Physikalisch-Technische Bundesanstalt), R. Altmann (Fraunhofer IISB), M. Polignano, E. Cazzini, D. Codegoni (Numonyx), G. Borionetti (MEMC Electronic Materials SpA), M. Kolbe (Physikalisch-Technische Bundesanstalt), M. Mueller (Physikalisch Technische Bundesanstalt), C. Mantler (Siltronic AG) and C. Streli (Atominstitut, Vienna Universtiy of Technology)
17:40   1980   Revealing Copper Contamination in Silicon after Low Temperature Treatments M. Polignano, J. Brivio, D. Codegoni, S. Grasso (Numonyx), R. Altmann and A. Nutsch (Fraunhofer IISB)
 

Gallery, Level 01 - Green

E1 Poster session

Co-Chair(s): B.O. Kolbesen and L.Fabry
TimeAbs#Title and Authors
o   1981   Improved TEM Sample Preparation by Low Energy FIB for Strain Analysis by Convergent Beam Electron Diffraction R. Balboni (CNR-IMM), G. Borionetti (MEMC Electronic Materials SpA), L. Moiraghi, G. Vaccari, M. Polignano, G. Carnevale, F. Cazzaniga, I. Mica and F. Sammiceli (Numonyx)
o   1982   Improved Efficiency of TiO2 Nanotubes in Dye Sensitized Solar Cells by Decoration with TiO2 Nanoparticles P. Roy, D. Kim, E. Spiecker and P. Schmuki (University of Erlangen-Nuremberg)
o   1983   Effect of High-Temperature Annealing on Evaporated Silicon Oxide Films: A Spectroscopic Ellipsometry Study A. Szekeres, E. Vlaikova (1Institute of Solid State Physics, Tzarigradsko Ch. 72, Sofia 1784, Bulgaria), T. Lohner (MFA Research Institute for Technical Physics and Materials Science), P. Petrik (MFA), A. Cziraki (Eotvos L. University, Pazmany), G. Kovacs (MFA Research Institute for Technical Physics and Materials Science, 1121 Budapest, Konkoly Thege 29-33, Hungary), S. Zlobin and P. Shepeliavyi (Institute of Semiconductor Physics, National Academy of Sciences of Ukraine)
o   1984   The Surface Properties of Silica Based Polymer-Detonation Nanodiamond Composites and Their Application as Cell Support Surfaces L. Pramatarova, E. Radeva, E. Pecheva (Institute of Solid State Physics, Bulgarian Academy of Sciences), E. Iacob, L. Vanzetti (Fondazione Bruno Kessler), N. Krasteva (Institute of Biophysics, Bulgarian Academy of Sciences), R. Dimitrova (Institute Of Organic Chemistry With Centre Of Phytochemistry, Bulgarian Academy of Sciences), D. Fingarova and T. Hikov (Institute of Solid State Physics, Bulgarian Academy of Sciences)
o   1985   Poly Si TFT on Microsheet S. Won (University of Seoul)
o   1986   New Approaches in Wet Chemical Etching for Defect Delineation in Silicon Substrates J. Maehliss, R. Hakim (Goethe-University), F. Brunier (SOITEC S.A.) and B. Kolbesen (Institute fur Anorganische und Analytische Chemie)
o   1987   The Characterization of Bottom-Gate Thin Film Transistors Adapted Nanocrystalline Silicon as Active Layer by Catalytic CVD at Low Temperature. Y. Lee, K. Lee (University of Seoul), J. Hwang (Universty of Seoul), K. No (University of Seoul), K. Yoon, S. Yang (Samsung Electronics Co.,Ltd), S. Won, J. Sok, K. Park and W. Hong (University of Seoul)
o   1988   Two-Dimensional Chemical Delineation of Junction Profile with High Spatial Resolution and Application in Failure Analysis in 65 nm Technology Node B. Liu, Y. Hua, Z. Mo and N. Adrian (Chartered Semiconductor)
o   1989   Drain Leakage Current Evaluation in the Diamond SOI nMOSFET at High Temperatures M. Bellodi and S. Gimenez (Centro Universitário da FEI)
o   1990   Effect of Nanodiamond Particles Incorporation in Hydroxyapatite Coatings E. Pecheva, L. Pramatarova (Institute of Solid State Physics, Bulgarian Academy of Sciences), A. Toth (Research Institute for Technical Physics and Materials Sciences, Hungarian Academy of Sciences), T. Hikov, D. Fingarova (Institute of Solid State Physics, Bulgarian Academy of Sciences), S. Stavrev (Space Research Institute, Bulgarian Academy of Sciences), E. Iacob and L. Vanzetti (Fondazione Bruno Kessler)
o   1991   Characterization of SiGe/Si Quantum Dot Grown by using APRPCVD T. Kim, M. Jeong, N. Mun, Y. Kil, J. Kim, T. Jeong, S. Kang, C. Choi, K. Shim (Chonbuk National University) and S. Kim (Electronics & Telecommunications Research Institute)
o   1992   3-D Model of Wafer Topography's Effect on Chemical Mechanical Polishing Process L. Wu (Lanzhou University of Technology)
o   1993   A Study of the Morphology of 3C-SiC Layers Grown at Different C/Si Ratios G. Attolini, B. E. Watts, M. Bosi, F. Rossi (Consiglio Nazionale delle Ricerche) and F. Riesz (Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences)
 

Wednesday, October 7, 2009

Room A353, Level 02 - Red

ANNA Ib (Joint research and networking activities)

Co-Chair(s): G. Pepponi and A. Nutsch
TimeAbs#Title and Authors
08:00   1994   High Depth Resolution Depth Profile Analysis of Ultrathin High-κ Hf Based Films Using MEIS Compared with XTEM, XRF, SE, and XPS J. Van den Berg, M. Reading (University of Salford), A. Parisini (CNR-IMM), M. Kolbe, B. Beckhoff (Physikalisch-Technische Bundesanstalt), S. Ladas (University of Patras), P. Petrik (MFA), P. Bailey, T. Noakes (STFC Daresbury Laboratory), T. Conard and S. De Gendt (IMEC)
08:20   1995   Comparison of Electrical Measurements with Structural Analysis of Thin High-k Hafnium-Based Films E. Hourdakis (NCSR Demokritos), M. Theodoropoulou (IMEL/NCSR Demokritos, Aghia Paraskevi, 153 10 Athens, Greece), A. Nassiopoulou (IMEL/NCSR Demokritos), A. Parisini (CNR-IMM), M. Reading, J. Van den Berg (University of Salford), T. Conard and S. Degendt (IMEC/MCA)
08:40   1996   Characterization of Near-Surface Defects Caused by Ultralow Energy Ion Implantation M. Fried, P. Petrik (MFA), J. Van den Berg, M. Reading (University of Salford) and A. Parisini (CNR-IMM)
09:00   1997   Preparation and Characterization of Nanocrystals P. Petrik (MFA), S. Milita (CNR-IMM Sezione Bologna), G. Pucker (Fondazione Bruno Kessler), A. Nassiopoulou (IMEL/NCSR Demokritos), J. Van den Berg, M. Reading (University of Salford), M. Fried (MFA), T. Lohner (MFA Research Institute for Technical Physics and Materials Science), M. Theodoropoulou, S. Gardelis (IMEL/NCSR Demokritos, Aghia Paraskevi, 153 10 Athens, Greece), M. Barozzi, M. Ghulinyan, A. Lui, L. Vanzetti and A. Picciotto (Fondazione Bruno Kessler)
09:20   1998   Ordered Arrays of SiO2 Nanodots with Embedded Nanocrystals: Fabrication and Charaterization A. Nassiopoulou (IMEL/NCSR Demokritos), V. Gianneta, M. Huffman (NCSR Demokritos), M. Reading, J. Van den Berg (University of Salford), I. Tsiaoussis, N. Frangis (Department of Physics, Aristotle University of Thessaloniki) and S. Kennou (Department of Chemical Engineering , University of Patras and FORTH-ICE/HT)
 

ANNA II (Transnational access)

Co-Chair(s): J. van den Berg and B. Beckhoff
TimeAbs#Title and Authors
10:00   1999   Surface Studies of Chemically Passivated Germanium C. Fleischmann (Katholieke Universiteit Leuven), S. Sioncke (IMEC), B. Beckhoff (Physikalisch-Technische Bundesanstalt), M. Mueller (Physikalisch Technische Bundesanstalt), M. Kolbe (Physikalisch-Technische Bundesanstalt), M. Meuris (IMEC), K. Temst and A. Vantomme (Katholieke Universiteit Leuven)
10:20   2000   A Comparison Between Self-Assembled Monolayers on Gold and Germanium Employing Grazing Incidence X-Ray Absorption Spectrometry GIXRF-NEXAFS M. Lommel, K. Barbe (Goethe University Frankfurt, Germany), F. Reinhardt (Physikalisch-Technische Bundesanstalt), A. Terfort (Goethe University Frankfurt, Germany), B. Beckhoff (Physikalisch-Technische Bundesanstalt), M. Mueller (Physikalisch Technische Bundesanstalt), P. Hoenicke, M. Kolbe (Physikalisch-Technische Bundesanstalt) and B. Kolbesen (Institute fur Anorganische und Analytische Chemie)
10:40   2001   Probing Patterned Wafer Structures by Means of Grazing Incidence X-ray Fluorescence Analysis J. Osan (Hungarian Academy of Sciences KFKI Atomic Energy Research Institute), F. Reinhardt, B. Beckhoff (Physikalisch-Technische Bundesanstalt), A. Pap (Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science) and S. Torok (Hungarian Academy of Sciences KFKI Atomic Energy Research Institute)
11:00   2002   Detection of Acidic Substances of H-X Type in Clean Room Air J. Kames (Artemis Control AG), A. Leibold, A. Nutsch and M. Otto (Fraunhofer IISB)
 

ANNA III (Ultra shallow junctions)

Co-Chair(s): M. Bersani and C. Streli
TimeAbs#Title and Authors
11:20   2003   Atomistic Modeling of Junction Formation: Tools for Process Optimization and Physical Understanding L. Pelaz, M. Aboy, L. Marques, P. Lopez and I. Santos (University of Valladolid)
12:00 Intermission (120 Minutes)
14:00   2004   Sub-nanometer Two-Dimensional Carrier Profiling in Silicon MOS Technologies Using High Vacuum Scanning Spreading Resistance Microscopy. P. Eyben, J. Mody, A. Nasir, A. Schulze, T. Hantschel and W. Vandervorst (IMEC)
14:40   2005   Improving and Assessing Soft X-Ray GIXRF Methodology Applied to the Characterization of Ultrashallow Junctions B. Beckhoff, P. Hoenicke and M. Kolbe (Physikalisch-Technische Bundesanstalt)
15:00   2006   A GIXRF Laboratory Instrument for the Characterization of Ultrashallow Implants and Thin Films D. Ingerle, N. Zöger, F. Meirer (Atominstitut, Vienna University of Technology), G. Pepponi (Fondazione Brunio Kessler), D. Giubertoni (Fondazione Bruno Kessler), P. Wobrauschek (Atominstitut, Vienna University of Technology) and C. Streli (Atominstitut, Vienna Universtiy of Technology)
15:20   2007   As Depth Profiling in Si Ultrashallow Junctions: Comparison of Three Different Experimental Determinations. A. Parisini, V. Morandi (CNR-IMM), J. Van den Berg, M. Reading (University of Salford), D. Giubertoni (Fondazione Bruno Kessler), P. Bailey and T. Noakes (STFC Daresbury Laboratory)
15:40   2008   Ultrashallow Boron Junctions in Silicon Characterization by Secondary Ion Mass Spectrometry and Synchrotron Radiation Grazing Incidence X-Ray Fluorescence Techniques D. Giubertoni (Fondazione Bruno Kessler), P. Hoenicke, B. Beckhoff (Physikalisch-Technische Bundesanstalt), G. Pepponi (Fondazione Brunio Kessler), E. Iacob and M. Bersani (Fondazione Bruno Kessler)
16:00 Concluding Remarks (10 Minutes)