216th ECS Meeting - Vienna, Austria

October 4 - October 9, 2009

PROGRAM INFORMATION
 

E6 - One-Dimensional Nanoscale Electronic and Photonic Devices 3

Electronics and Photonics/Sensor/Corrosion
 

Monday, October 5, 2009

Rooms G631/H632, Level U2 - Blue

Nanoelectronics and Materials(I)

Co-Chair(s): LJ Chou and Siegmar Roth
TimeAbs#Title and Authors
10:30   2189   Multifunctional Si Nanotips-Array: Antireflection and Tip-Enhanced Electroluminescence and Magnetoresistance L. Chen (National Taiwan University) and K. Chen (Academia Sinica)
10:55   2190   SWNT FETs as Functional Structures in Sensors C. Hierold, T. Helbling, M. Mattmann and C. Roman (ETH Zurich)
11:20   2191   Connectivity in Carbon Nanotube Networks P. Nirmalraj, P. Lyons, S. De, J. Coleman and J. J. Boland (Trinity College Dublin)
11:45   2192   Nanowire-Based Thin-Film Devices as High-Performance Transparent and Flexible Electronics W. Lu (University of Michigan)
 

Nanoelectronics and Materials(II)

Co-Chair(s): Christofer Hierold and Li-Chyong Chen
TimeAbs#Title and Authors
14:00   2193   Noble-Metal Covered W(111) Single-Atom Electron Sources I. Hwang, H. Kuo, C. Chang and T. Tsong (Institute of Physics)
14:25   2194   Pumping Single Electrons by Nanotube Turnstiles V. Siegle, C. Liang (Max-Planck-Institute for Solid State Research), S. Lothkov, B. Kaestner, H. Schumacher (Physikalisch-Technische Bundesanstalt), F. Jessen, R. Kleiner (University of Tübingen), D. Kölle (Physikalisches Institut - Experimentalphysik II, University of Tübingen) and S. Roth (Max-Planck-Institute fur Festkorperforschung)
14:50   2195   Stability Requirements in Nanowire Electronic Devices G. Kim, J. Ha and S. Kahng (Korea University)
15:15   2196   The Silicon Nanowire Accumulation-Mode MOSFET P. Garg (Pennsylvania State University), J. Wu, Y. Hong (The Pennsylvania State University), M. Iqbal, P. Migliorato (University of Cambridge) and S. J. Fonash (The Pennsylvania State University)
15:35   2197   DOS Spectrum Deconvolution from C(Vg) and Q(Vg) Dependencies of Si Nanowire-based MOS Structure V. Ligatchev and S. Chin (Institute of High-Performance Computing)
15:55 Intermission (15 Minutes)
 

Nanoelectronics and Materials(III)

Co-Chair(s): Ing-Shouh Hwang and John J. Boland
TimeAbs#Title and Authors
16:10   2198   Growth of Metal Nanowhiskers on the Patterned Substrate by Glancing Angle Deposition at High Temperature M. Suzuki, H. Hara, R. Kita, K. Hamachi, K. Nagai, K. Nakajima and K. Kimura (Kyoto University)
16:30   2199   Multiple Heterostructures of Ni2Si/Si Formed by the Point Contact Reaction H. Ouyang, M. Cheng, Y. Shiu, S. Chen (National Tsing Hua University), W. Wu (National Chiao Tung University), S. Lo (Material and Chemical Research Laboratories and Nanotechnology Research Center, Industrial Technology Research Institute) and L. Chen (National Tsing Hua University)
16:50   2200   Chemically Designed Nanowires and Nanocomposites: Processing and Integration in Sensor Devices S. Mathur (University of Cologne)
17:05   2201   Thermal Expansion Behaviors of Bi Nanowires Fabricated via Centrifugal Processing C. Wang (National Tsing Hua University), S. Chen, C. Chao (National Chiao Tung University) and L. Chen (National Tsing Hua University)
17:20   2202   Plasmonic Behaviors of Gold-in-Ga2O3 Nanostructures Y. Wu, C. Hsu, S. Chen (National Tsing Hua University), L. Chou (National Tsing-Hua University) and L. Chen (National Tsing Hua University)
17:35   2203   Single Crystal Au Nanowires and Their Field Emission Properties C. Chen (National Tsing Hua University) and L. Chou (National Tsing-Hua University)
 

Tuesday, October 6, 2009

Rooms G631/H632, Level U2 - Blue

Nanophotonics and Materials(I)

Co-Chair(s): G. Duesberg and Zeehwan Kim
TimeAbs#Title and Authors
08:30   2204   Growth of Large Transparent and Conducting Graphene Sheets using Chemical Vapor Deposition H. Park, V. Skakalova (Max Planck Institute) and S. Roth (Max-Planck-Institute fur Festkorperforschung)
08:55   2205   Group IV Semiconductor Nanowire Optoelectronics C. Kim, K. Kang, H. Lee, G. Lee and M. Jo (Pohang University of Science and Technology)
09:20   2206   CARBonCHIP: Carbon Nanotubes Technology on Silicon Integrated Circuits; Some Key Results P. Rapposelli, B. Capraro (Intel Ireland Ltd.), J. Dijon (CEA Liten), G. Groeseneken, D. Cott (IMEC), J. Pinson, X. Joyeux (Alchimer S.A.), J. Amadou (Nanocyl S.A.), J. Van Noyen and B. Sels (Centre for Surface Chemistry and Catalysis, Katholieke Universiteit Leuven)
09:45   2207   Structure Confinement of Carbon-based Nanomaterials in Vapor Phase for Their Applications in Nanoelectronic/Photonic Systems H. Choi (POSTECH)
10:10   2208   Fabrication and Characterization of Nanorod Array Light Emitting Diodes by Using Nanosphere Lithography M. Ke, C. Wang, L. Chen, H. Chen, H. Chiang, Y. Cheng, M. Hsieh, C. Chen and J. Huang (National Taiwan University)
10:25 Intermission (15 Minutes)
 

Nanophotonics and Materials(II)

Co-Chair(s): Moon-Ho Jo and Hye Jin Park
TimeAbs#Title and Authors
10:40   2209   Electronic and Optical Properties of Pristine and Metallicity Selected Functionalized Single Wall Carbon Nanotubes T. Pichler (University of Vienna)
11:05   2210   Synthesis of GaN Nanowires Using Gold Nanoparticles on Plasma-Activated Silicon Substrate K. Lee, P. Lo and I. Chen (National Cheng Kung University)
11:30   2211   Real-Space Mapping of Hybridized Plasmons of Nanoparticle Dimers D. Kim and Z. Kim (Korea University)
11:55   2212   Controlling the Degree of the Optical Anisotropy of Birefringent Porous Silicon K. Nishida, N. Ishikura, M. Fujii, S. Hayashi (Kobe University) and J. Diener (Technische Universität München)
 

Nanophotonics and Materials(III)

Co-Chair(s): Hee Cheul Choi and Paolo Rapposelli
TimeAbs#Title and Authors
14:00   2213   CVD Growth of Nanocarbons for Device Applications N. Mc Evoy, S. Kumar, T. Lutz, G. Keeley, W. Blau (Trinity College Dublin) and G. Duesberg (Trinity College, Dublin)
14:25   2214   Ultrathin SOI Layer Nanostructuring and Nanowire Transistor Formation for FemtoMole Electronic Biosensors O. Naumova, V. P. Popov, B. Fomin, L. Safronov, D. Nasimov and A. Latyshev (Institute of Semiconductor Physics)
14:45   2215   Formation of Aluminum Nanodots by Inhomogeneous Anodization Used for Fabrication of a Single-Electron Transistor T. Muto, Y. Kimura and M. Niwano (Tohoku University)
15:00   2216   Field Emission Properties of Gadolinium Silicide Nanowires Prepared by Physical Vapor Deposition L. Chu and L. Chen (National Tsing Hua University)
15:15   2217   Self-Catalyzed Iron Silicide Nanowires with Room Temperature Ferromagnetic and High Conductivity Properties H. Shih-Wei and C. Lih-Juann (National Tsing Hua University)
15:30   2218   Three Dimensional WO3 Nanowires for All Solid State Electrochromic Device C. Lin and L. Chen (National Tsing Hua University)
 

Gallery, Level 01 - Green

Poster Session - Nanoelectronics and Photonics

Co-Chair(s): In-Gann Chen, Motofumi Suzuki, Hao Ouyang, Wei Lu
TimeAbs#Title and Authors
o   2219   Au(Sn)-SnO2 Core-shell Nanowires: High Temperature Nanothermometers S. Chen, C. Chen, C. Wang (National Tsing Hua University), L. Chou (National Tsing-Hua University) and L. Chen (National Tsing Hua University)
o   2220   Electrical Properties of In2O3 Nanowires C. Hsu, C. Hsieh (National Tsing Hua University) and L. Chou (National Tsing-Hua University)
o   2221   Self-assembled Epitaxial Co1-xNixSi2 Alloy Nanowires on Si(001) W. Li, C. Lee, S. Chen and L. Chen (National Tsing Hua University)
o   2222   UV Photodetectors with Lateral Self-Assembled ZnO Nanowires Grown at Low Temperature P. Yang, I. Lee, C. Chang, K. Lin (National Chiao Tung University), J. Wang (Ming Chi University), K. Cheng, C. Lin and H. Cheng (National Chiao Tung University)
o   2223   Towards Refractive Index Modulation in TiO2 by Means of Electrochemical Anodization S. Liu, C. Lin, J. Lin, S. Lee (National Central University), C. Couteau and G. Lerondel (University of Technology of Troyes)
o   2224   High Density Nickel Silicide Nanowire Arrays via Silicidation of Silicon Nanowires and its Field Emission Property C. Liu, C. Tsai and L. Chen (National Tsing Hua University)
o   2225   Electrical Characterization of Silicon Nanowires FET B. Salem (LTM-CNRS), H. Abed, F. Dhalluin, M. Panabière, T. Baron (CNRS), P. Noe (CEA), F. Oelher (CEA-INAC/SiNaPS), N. Pauc and P. Gentile (CEA)
o   2226   Fabrication of ZnO Nanorods Based Field Effect Transistors and Their Electrical Properties Y. Park, J. Kim, D. Hong and Y. Hahn (Chonbuk National University)
o   2227   Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications J. Hwang (Universty of Seoul), K. Lee, Y. Lee (University of Seoul), S. Jang (Universty of Seoul), M. Han, S. Won, J. Sok, K. Park and W. Hong (University of Seoul)
o   2228   Excimer Laser Annealing Effects of Silicon-Rich Silicon Nitride Films Prepared by Using Catalytic Chemical Vapor Deposition K. Lee (University of Seoul), J. Hwang (Universty of Seoul), Y. Lee (University of Seoul), S. Kim, M. Han (Seoul National University), S. Jang (Universty of Seoul), M. Han, S. Won, J. Sok, K. Park and W. Hong (University of Seoul)