217th ECS Meeting - Vancouver, Canada

April 25 - April 30, 2010

PROGRAM INFORMATION
 

E1 - Advanced Gate Stack, Source / Drain, and Channel Engineering for Si-Based CMOS 6: New Materials, Processes, and Equipment

Electronics and Photonics/Dielectric Science and Technology/High Temperature Materials
 

Monday, April 26, 2010

Regency B, 3rd Floor, Hyatt

Plenary Session

Co-Chairs: E. P. Gousev and F. Roozeboom
TimeAbs#Title and Authors
08:00   913   More after Moore to Get More from Moore C. Smith, M. Hussain, W. Loh, C. Kang, D. Gilmer, G. Bersuker, P. Majhi, P. Kirsch and R. Jammy (SEMATECH)
09:00   914   Silicon Photonics Technologies for Monolithic Electronic-Photonic Integrated Circuit G. Lo, K. Ang, T. Liow, Q. Fang, J. Zhang, M. Yu and D. Kwong (Institute of Microelectronics)
 

Channel & Source/Drain Engineering I

Co-Chairs: M. C. Ozturk and M. Fischetti
TimeAbs#Title and Authors
10:00   915   Scaling FETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source M. V. Fischetti (University of Massachusetts), S. Jin (Synopsys Inc), T. Tang (University of Massachusetts), P. Asbeck, Y. Taur (University of California, San Diego), S. Laux (IBM SRDC and IBM Research Division), N. Sano (University of Tsukuba) and M. Rodwell (University of California, Santa Barbara)
10:30   916   Cross-Sectional UV-Raman Measurement for Two-Dimensional Channel-Stress Profile in Extremely High-Performance pMOSFET H. Akamatsu (Meiji University), M. Takei (Meiji Universty), D. Kosemura, K. Nagata (Meiji University), S. Mayuzumi (Sony Corporation, Meiji University), S. Yamakawa, H. Wakabayashi (Sony Corporation) and A. Ogura (Meiji University)
10:50   917   Novel Noncontact Approach to Characterization of Mobility in Inversion Layers Using Corona Charging of Dielectric and SPV Monitoring of Sheet Resistance J. Everaert, E. Rosseel (IMEC), A. Meszaros, K. Kis-Szabo, P. Tutto, A. Pap, T. Pavelka (Semilab Co. Ltd.), M. Wilson (Semilab SDI), A. Findlay, L. Jastrzebski and J. Lagowski (Semilab SDI, LLC)
11:10   918   Effect of Carrier Scattering Phenomena on Drain Current Variability in Si MOSFETs K. Ohmori (Waseda University), T. Matsuki, Y. Ohkura, J. Yugami, K. Ikeda, Y. Ohji (Semiconductor Leading Edge Technologies), Y. Yasuda, T. Endoh (Tohoku University), K. Shiraishi (University of Tsukuba) and K. Yamada (Waseda University)
11:40   919   Carrier Mobility Variations in Self-Aligned Germanium MOS Transistors Y. Low, D. Tantraviwat, P. Rainey, P. Baine, D. William, N. Mitchell, B. M. Armstrong and H. Gamble (Queen's University Belfast)
 

Channel & Source/Drain Engineering II

Co-Chairs: P. Timans and P. Lo Guo-Qiang
TimeAbs#Title and Authors
14:00   920   Strained Si:C Using ClusterCarbon Implant K. Sekar and W. Krull (SemEquip Inc)
14:30   921   Epitaxial Growth of Si:C Alloys: Process Development and Challenges A. Dube (IBM Corporation)
15:00   922   Electrical and Materials Analysis of III-V Semiconductors for MOSFETs with Gate Lengths below 20nm D. W. Barlage (University of Alberta), M. Veety (North Carolina State University), M. Vaidyanathan (University of Alberta) and M. Johnson (North Carolina State University)
15:30 Intermission (10 Minutes)
15:40   923   Investigation of the New Physical Model of Ohmic Contact for Future Nanoscale Contacts Y. Takada (University of Tsukuba), M. Muraguchi, T. Endoh (Tohoku University), S. Nomura and K. Shiraishi (University of Tsukuba)
16:00   924   Advanced (Millisecond) Annealing in Silicon-Based Semiconductor Manufacturing S. Govindaraju, C. Shih and R. Panchapakesan (Intel Corporation)
16:30   925   Advanced Source/Drain Engineering for MOSFETs: Schottky Barrier Height Tuning for Contact Resistance Reduction Y. Yeo (National University of Singapore)
 

Tuesday, April 27, 2010

Regency F, 3rd Floor, Hyatt

High K / Metal Gate Stacks I

Co-Chairs: Hiroshi Iwai & Vijay Narayanan
TimeAbs#Title and Authors
08:30   926   Oxygen Transport in High-k Metal Gate Stacks and Physical Characterization by SIMS Using Isotopic Labeled Oxygen M. J. Hopstaken, J. Bruley, D. Pfeiffer, M. Copel, M. M. Frank, E. Cartier (IBM T.J. Watson Research Center), T. Ando (IBM T. J. Watson Research Center) and V. Narayanan (IBM T.J. Watson Research Center)
08:50   927   Ultimate EOT Scaling (< 5Å) Using Hf-Based High-κ Gate Dielectrics and Impact on Carrier Mobility T. Ando (IBM T. J. Watson Research Center), M. M. Frank (IBM T.J. Watson Research Center), K. Choi (GLOBALFOUNDRIES), C. Choi (IBM), J. Bruley (IBM T.J. Watson Research Center), M. Hopstaken (IBM), M. Copel (IBM T.J. Watson Research Center), R. Haight (IBM), H. Arimura, H. Watanabe (Osaka University) and V. Narayanan (IBM T.J. Watson Research Center)
09:20   928   Physical and Electrical Properties of MOCVD Grown HfZrO4 High-k Thin Films Deposited in a Production-Worthy 300 mm Deposition System S. P. Consiglio, C. Wajda, G. Nakamura, R. Clark (TEL Technology Center, America), S. Aoyama and G. Leusink (Tokyo Electron AT)
09:40 Intermission (20 Minutes)
10:00   929   Atomic Vapor Deposition and Atomic Layer Deposition of High-k and Electrode Materials M. Heuken, U. Weber, P. Lehnen, P. Baumann (AIXTRON AG), Y. Senzaki, J. Lindner, B. Lu and Z. Karim (AIXTRON Inc.)
10:30   930   Transformation of Crystalline Structure of HfO2 by La- or Y-Oxide Capping and Annealing T. Suzuki, T. Matsuki, T. Morooka, M. Sato, J. Yugami, K. Ikeda and Y. Ohji (Semiconductor Leading Edge Technologies)
10:50   931   Rare Earth Materials for Semiconductor Applications S. Van Elshocht (imec), C. Adelmann, M. Popovici, J. Swerts, A. Delabie, L. Nyns, X. Shi, H. Tielens (IMEC vzw), G. Pourtois (IMEC), T. Schram (IMEC vzw), D. Pierreux, J. Maes (ASM-B), A. Hardy, M. Van Bael (Hasselt University) and J. Kittl (IMEC vzw)
11:20   932   Impact of the Metal Gate on Carrier Transport in HK/MG Transistors M. Cassé, X. Garros (CEA-Léti - MINATEC), L. Bruent (CEA-Léti - MINATEC and STMicroelectronics) and G. Reimbold (CEA-Léti - MINATEC)
 

High K / Metal Gate Stacks II

Co-Chairs: Fred Roozeboom & Dim-Lee Kwong
TimeAbs#Title and Authors
14:00   933   High Performance and Highly Uniform Metal Hi-K Gate-All-Around Silicon Nanowire MOSFETs J. W. Sleight, S. Bangsaruntip, G. Cohen, A. Majumdar, Y. Zhang, S. Engelmann, N. Fuller, L. Gignac, S. Mittal, J. Newbury, T. Barwicz (IBM), M. M. Frank (IBM T.J. Watson Research Center) and M. Guillorn (IBM)
14:30   934   Determination of Band Offsets, Chemical Bonding and Microstructure of the (TbxSc1-x)2O3/Si System I. Geppert, M. Eizenberg (Technion - Israel Institute of Technology), N. Bojarczuk, L. Edge, M. Copel and S. Guha (IBM Research Division)
14:50   935   Electrical Characteristics of Metal-Ferroelectric (BiFeO3) - High-k Insulator (LaGdO3) -Semiconductor Capacitors and Field-Effect Transistors R. Thomas (University of Puerto Rico), T. Kalkur (University of Colorado), S. Pavunny, N. Murari and R. Katiyar (University of Puerto Rico)
15:10   936   Electrical Characterization of ALD Al2O3 and HfO2 Films on Germanium D. Tantraviwat, Y. Low, P. Baine, N. Mitchell, D. McNeill, B. M. Armstrong and H. Gamble (Queen's University Belfast)
15:30 Intermission (20 Minutes)
15:50   937   Electrical and Physical Properties of High-k Gate Dielectrics on InxGa1-xAs E. Vogel, A. Sonnet, R. Galatage, M. Milojevic, C. Hinkle and R. M. Wallace (University of Texas at Dallas)
16:20   938   Effect of Ozone Concentration on Atomic Layer Deposited High-k Dielectric on Si and GaAs K. Chung (Hanyang University), T. Park, P. Sivasubramani, J. Kim (University of Texas at Dallas) and J. Ahn (Hanyang University)
16:40   939   Investigation of High-K Dielectrics on Compound Semiconductors for Applications in RF, Mixed Signal and Power Electronics V. Misra, R. Suri, D. Lichtenwalner and C. Kirkpatrick (North Carolina State University)
17:10   940   (NH4)2S Passivation of High-k/In0.53Ga0.47As Interfaces: A Systematic Study of (NH4)2S Concentration E. O'Connor (Tyndall National Institute), B. Brennan (Dublin City University), R. Contreras, M. Milojevic (University of Texas at Dallas), K. Cherkaoui, S. Monaghan (Tyndall National Institute), G. Hughes (Dublin City University), M. Pemble (Tyndall National Institute), R. M. Wallace (University of Texas at Dallas) and P. Hurley (Tyndall National Institute)
 

Exhibit and Poster Hall, Conference Floor, Fairmont

Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o   941   SiO Emission and Incorporation in Silicon Oxidation Process Using Molecular Dynamics Method N. Takahashi, T. Yamasaki and C. Kaneta (Fujitsu Laboratories Ltd.)
o   942   Analytical Characterization of ALD Thin Film Precursors L. S. Milstein, P. Clancy and H. Gotts (Air Liquide - Balazs Nanoanalysis)
o   943   Atomic Layer Deposition of Boron Oxide as Dopant Source for Shallow Doping of Silicon B. Kalkofen and E. Burte (University of Magdeburg)
o   944   Effective Mass, Mobility, On-Current and Transconductance of FETs on SSOI and SOI S. F. Feste, T. Schäpers, D. Buca, Q. Zhao (Forschungszentrum Juelich), J. Knoch (TU Dortmund University), M. Bouhassoune, A. Schindlmayr (Universität Paderborn) and S. Mantl (Forschungszentrum Juelich)
o   945   Low Temperature Epitaxy of Si and SiGe Using Disilane Based Chemistry for Electronic Purposes J. Damlencourt (CEA/Leti-Minatec)
o   946   Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI S. Liao, M. Bain, P. Baine, J. Montgomery, D. McNeill, B. M. Armstrong and H. Gamble (Queen's University Belfast)
o   947   Dependence of SOI Property on Memory Characteristic in a Cap-Less Memory Cell T. Shim, S. Kim (Advanced Semiconductor Material and Device Development Center), T. Kim (Nano-SOI Process Laboratory) and J. Park (Advanced Semiconductor Material and Device Development Center)
o   948   Niobium Precursors for Atomic Layer Deposition of Nb2O5 A. Zauner, M. Karakachian, C. Lachaud, V. Lahootun and A. Pinchart (Air Liquide)
o   949   Impact of Work Function Optimized S/D Silicide Contact for High Current Drivability CMOS Y. Nakao, R. Kuroda, H. Tanaka, T. Isogai, A. Teramoto, S. Sugawa and T. Ohmi (Tohoku University)
o   950   The Investigation of Interface Oxide of HfO2 and Al2O3 Stacks on GaAs(100) Surfaces Y. Cho, D. Suh, D. Ko and M. Cho (Yonsei University)
o   951   Atomically Flattening Technology at 850 ºC for Si(100) Surface X. Li, A. Teramoto, T. Suwa, R. Kuroda, S. Sugawa and T. Ohmi (Tohoku University)
o   952   Improvement of Electrical Performances of Tungsten Dual-Work Function Gate Electrode Using WSiN/WN/Ti Stacks as a Diffusion Barrier Metal H. Kim, I. Rho, C. Kim, M. Gil and H. Kang (Hynix Semiconductor Inc.)
o   953   Quasistatic Capacitance-Voltage Characterization of Thin Ta2O5 Films L. B. Sanchez, N. Nedev, R. K. Zlatev, M. Curiel and B. Valdez (Universidad Autonoma de Baja California)
o   954   Electrical Characterization of High-Pressure Reactive Sputtered Sc2O3 Films on Silicon H. Castán, S. Dueñas, A. Gómez, H. García, L. Bailón (Universidad de Valladolid), P. Feijoo, E. San Andrés, I. Mártil and G. González-Díaz (Universidad Complutense de Madrid)
o   955   Selective Epitaxial Growth of Silicon Layer Using Batch-Type Equipment for Vertical Diode Application to Next Generation Memories K. Lee, D. Yoo, Y. Yoo, J. Han, S. Kim, H. Jeong, C. Kang, J. Moon, H. Park (Samsung Electronics Co., LTD.), H. Jeong, G. Kim and B. Choi (Sungkyunkwan University)
o   956   Electrical Extraction of One Dimensional MOSFET Transistor Channel Doping Profiles by Threshold Voltage Measurement H. Park, K. Lee (Samsung Electronics Co., LTD), H. Jeong, G. Kim and B. Choi (Sungkyunkwan University)
o   957   Studies on Hole Trapping and SILC of Dual Layer nc-ITO Embedded ZrHfO Memories C. Lin, C. Yang (Texas A&M University) and Y. Kuo (Texas A&M University)
o   958   Optical Characterization of Surface Profile of Various Si1-xGex/Si Wafers Before and After Annealing Step W. Yoo, T. Ueda, T. Ishigaki and K. Kang (WaferMasters, Inc.)
o   959   Nondestructive Characterization of Ge Content and Ge Depth Profile Variations in Si1-xGex/Si by Multiwavelength Raman Spectroscopy W. Yoo, T. Ueda, T. Ishigaki and K. Kang (WaferMasters, Inc.)
o   960   Influence of Postdeposition Annealing on Physical and Electrical Properties of High-k Yb2TiO5 Gate Dielectrics T. Pan (Chang Gung University), L. Yen (National Chiao Tung University), M. Tsai (Chang Gung University) and T. Chao (National Chiao Tung University)
o   961   Structural and Electrical Properties of High-k HoTiO3 Gate Dielectrics T. Pan (Chang Gung University), L. Yen (National Chiao Tung University), C. Hu (Chang Gung University) and T. Chao (National Chiao Tung University)
o   962   Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi (University of Tsukuba), M. Muraguchi, T. Endoh (Tohoku University), M. Ikeda, K. Makihara and S. Miyazaki (Hiroshima University)
o   963   Hydrogen Implantation in Germanium Y. Low, P. Rainey, R. Hurley, P. Baine, D. McNeill, N. S. Mitchell, H. Gamble and B. M. Armstrong (Queen's University Belfast)
o   964   Analysis of the Homogeneous Thermal Decomposition of the Tungsten Dimethylhydrazido Complex Cl4(CH3CN)W(NNMeM2) Using In Situ Raman Spectroscopy and DFT Calculations J. Lee, D. Kim, O. Kim, T. Anderson, J. Koller and L. McElwee-White (University of Florida)
o   965   Improved Performance of MIC Poly-Si TFTs Using Driven-In Nickel Induced Crystallization with Cap SiO2 by F Implantation M. Lai, Y. Wu, T. Tung and H. Wu (National Chiao Tung University)
o   966   Fabrication of High Electrical Performance NILC-TFTs Using FSG Buffer Layer C. Chen, Y. Wu, T. Tung and H. Wu (National Chiao Tung University)
o   967   Effect of In Situ Hydrogen Annealing on Dielectric Property of a Low Temperature Silicon Nitride Layer in a Bottom-Gate Nanocrystalline Silicon TFT by Catalytic CVD Y. Lee, K. Lee, J. Hwang, K. No and W. Hong (University of Seoul)
o   968   CMP Chemistry and Process for Cu Interconnection with Co and Ru Barrier Y. Wang, M. Gage, W. Tu, Y. Wang, L. Karuppiah, K. Xu and Y. Chen (Applied Materials, Inc.)
o   969   Application of Atmospheric Plasma for Low Temperature Wafer Bonding Y. Low, P. Rainey, P. Baine, J. Montgomery, D. McNeill, N. S. Mitchell, H. Gamble and B. M. Armstrong (Queen's University Belfast)
o   970   Decomposition Characteristics of Metal-Organic Materials of Ga Doped Zinc Oxide for Evaluation as MOCVD Precursor S. Yamashita, K. Watanuki, H. Ishii, M. Kitano, Y. Shirai and T. Ohmi (Tohoku University)