217th ECS Meeting - Vancouver, Canada

April 25 - April 30, 2010

PROGRAM INFORMATION
 

E2 - Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing

Dielectric Science and Technology
 

Monday, April 26, 2010

Plaza A, 2nd Floor, Hyatt

Nanoscale Devices and Systems

Co-Chairs: H. Iwai and D. Misra
TimeAbs#Title and Authors
08:55 Introductory Remarks (5 Minutes)
09:00   971   Changing Front-End Dielectric Requirements for End-of-the-Roadmap CMOS and Beyond L. F. Register (The University of Texas at Austin), N. Shi, M. Hasan, D. Basu, D. Reddy and S. Banerjee (The University of Texas at Austiin)
09:30   972   A Brain-Inspired VLSI Architecture for Nano Devices and Circuits T. Shibata (The University of Tokyo)
10:00   973   High-k Gate Dielectrics for Nanoscale CMOS Devices: Status, Challenges, and Future D. Park (IBM T.J. Watson Research)
10:30 Intermission (20 Minutes)
10:50   974   (Invited) ALD High-k as a Common Gate Stack Solution for Nanoelectronics P. Ye and J. Gu (Purdue University)
11:20   975   Towards the Ultimate Scaling of MOSFET Gate Dielectrics: Direct Contact of High-k and Silicon P. Ahmet, K. Kakushima and H. Iwai (Tokyo Institute of Technology)
11:50   976   Quantitative Correlation Between Low-Field Mobility and High-Field Carrier Velocity in Quasi-Ballistic-Transport MISFETs with High-k Gate Dielectrics K. Tatsumura, M. Goto, S. Kawanaka and A. Kinoshita (Toshiba Corporation)
 

High-K Processing

Co-Chairs: P. Ahmet and L. Register
TimeAbs#Title and Authors
14:00   977   Effect of the Chemical Oxide Layer Thickness on the Interfacial Quality of ALD-grown HfO2 on Silicon S. Li and Z. D. Chen (University of Kentucky)
14:30   978   A Comparison of O3 and H2O as Oxygen Sources for Atomic Layer Deposition Processing of HfAlOx Thin Films for High-k Dielectric Nanocapacitor Applications R. Phillips and E. Eisenbraun (University at Albany)
14:50   979   Improved Resistive Switching Performance of Gd2O3 Films by Fluorine Incorporation and Gd/O Ratio Adjustment Y. Ye, J. Wang and C. Lai (Chang Gung University)
15:10   980   Design of a Novel Wet-Etch Reactor and Etch Chemistries: Simulations and Experimental Verification A. Pande, G. Levitin (Georgia Institute of Technology), D. S. Mui (Lam Research Corporation) and D. Hess (Georgia Institute of Technology)
15:30 Intermission (10 Minutes)
15:40   981   Atomic Layer Deposition of Hafnium Silicate Film and Its Application to OTFTs S. Lee (Pohang University of Science and Technology (POSTECH)) and K. Yong (POSTECH)
16:00   982   Resistive Switching Characteristics of HfOx Thin Film K. Chang, W. Tzeng (National Chiao Tung University), K. Liu (Chang Gung University) and T. Wu (National Chiao Tung University)
 

Low-K Dielectrics

Co-Chairs: Y. Obeng and D. Bauza
TimeAbs#Title and Authors
16:20   983   Suppression Mechanism of Volume Shrinkage for SOG Film by Plasma Treatment K. Nagata, D. Kosemura (Meiji University), M. Takei (Meiji Universty), H. Akamatsu (Meiji University), M. Hattori (Meiji Universty), T. Koganezawa, M. Machida, J. Son, I. Hirosawa (JASRI), T. Nishita, T. Shiozawa, D. Katayama, Y. Sato, Y. Hirota (Tokyo Electron Limited) and A. Ogura (Meiji University)
16:40   984   How to Evaluate Surface Free Energies of Dense and Ultra Low-κ Dielectrics in Pattern Structure T. Oszinda (Fraunhofer CNT), M. Schaller (GLOBALFOUNDRIES) and S. Schulz (TU Chemnitz and Fraunhofer ENAS)
 

Tuesday, April 27, 2010

Plaza A, 2nd Floor, Hyatt

High-K Characterization

Co-Chairs: Z. Chen and K. Tatsumura
TimeAbs#Title and Authors
08:30   985   XPS Study on Chemical Bonding States of High-k Gate Stacks for Advanced CMOS H. Nohira (Tokyo City University)
09:00   986   Electrical Scanning Probe Microscopy Techniques for the Detailed Characterization of High-k Dielectric Layers M. Rommel, V. Yanev (Fraunhofer IISB), A. Paskaleva (Institute of Solid State Physics, Bulgarian Academy of Sciences), T. Erlbacher, M. Lemberger, A. Bauer and L. Frey (Fraunhofer IISB)
09:30 Intermission (20 Minutes)
09:50   987   Electrical Characterization of Si Capped HfO2/Metal Gate Ge-pFETs: Physical Insight into Critical Parameters J. Mitard, B. Vincent, B. Dejaeger, K. Martens, R. Krom, R. Loo, G. Eneman, K. DeMeyer, M. Meuris, M. Heyns, W. Vandervorst, M. Caymax and T. Hoffmann (IMEC)
10:20   988   Oxidation, Diffusion and Desorption in Ge/GeO2 System A. Toriumi, S. Wang, C. Lee, M. Yoshida, K. Kita, T. Nishimura and K. Nagashio (University of Tokyo)
10:50   989   Investigation of High-κ Dielectric/InxGa1-xAs Interfaces K. Cherkaoui, E. O'Connor, S. Monaghan, R. Long, V. Djara and P. Hurley (Tyndall National Institute)
11:20   990   Dielectric Properties and Flat-Band Voltages of Doped HfO2 F. Ducroquet (CNRS-Minatec), E. Rauwel and C. Dubourdieu (LMGP)
11:50   991   Experimental Demonstration of Higher-k Phase HfO2 Through Non-Equilibrium Thermal Treatment Y. Nakajima, K. Kita, T. Nishimura, K. Nagashio and A. Toriumi (University of Tokyo)
 

High-K Reliability

Co-Chairs: J. Mitard and A. Toriumi
TimeAbs#Title and Authors
14:00   992   Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level? M. Nafria (Universitat Autonoma de Barcelona), R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich (Universitat Autonoma Barcelona)
14:30   993   Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO2 and the Impact on the Gate Dielectrics Reliability M. Sato, S. Kamiyama, Y. Sugita, T. Matsuki, T. Morooka, T. Suzuki (Semiconductor Leading Edge Technologies), K. Shiraishi, K. Yamabe (University of Tsukuba), J. Yugami, K. Ikeda, Y. Ohji (Semiconductor Leading Edge Technologies), K. Ohmori and K. Yamada (Waseda University)
15:00   994   Charges Pumping and Si-SiO2 Interface Traps Electrical Characterization D. Bauza (IMEP-LAHC, Minatec,)
15:30 Intermission (10 Minutes)
15:40   995   Degradation in HfSiON Film Induced by Electrical Stress Application R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi (University of Tsukuba), K. Ohmori (Waseda University), M. Sato (Semiconductor Leading Edge Technologies), A. Uedono (University of Tsukuba), T. Chikyow (Advanced Electronic Materials Center, NIMS), K. Shiraishi (University of Tsukuba), K. Yamada (Waseda University) and K. Yamabe (University of Tsukuba)
16:10   996   Degradation in MOSFET Multistack High-k Gate Dielectrics Due to Hot Carrier and Constant Voltage Stress Z. Celik-Butler and S. Rahman (University of Texas at Arlington)
16:40   997   An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks J. Chen, T. Sekiguchi, N. Fukata, M. Takase, Y. Nemoto (National Institute for Materials Science), R. Hasunuma, K. Yamabe (University of Tsukuba), M. Sato (Semiconductor Leading Edge Technologies), K. Yamada (Waseda University) and T. Chikyo (National Institute for Materials Science)
17:10   998   Statistical Analysis of Factors Affecting the Performance of MIM Tunnel Junctions R. Ratnadurai, S. Krishnan, S. Bhansali, E. Stefanakos and Y. Goswami (University of South Florida)
17:30   999   Resistive Switching Behaviors of NiO Bilayer Films with Different Crystallinity Layers K. Kita, A. Eika, T. Nishimura, K. Nagashio and A. Toriumi (University of Tokyo)
17:50   1000   Correlation of Negative Bias Temperature Instability and Breakdown in HfO2/TiN Gate Stacks N. Rahim and D. Misra (New Jersey Institute of Technology)
 

Exhibit and Poster Hall, Conference Floor, Fairmont

Poster Session

Co-Chairs: D. Misra and H. Iwai
TimeAbs#Title and Authors
o   1001   Reliability Characteristics of D2O-Radical Annealed ALD HfO2 Dielectric C. Tu (National Taipei University of Technology), F. Chiu (Ming Chuan University), C. Chen, C. Hou (National Tsing-Hua University), Z. Lee, H. Chen, S. Chen, H. Huang (National Taipei University of Technology), T. Wu and H. Hwang (National Tsing-Hua University)
o   1002   Temperature and Thickness Dependence of Cerium Oxide Dielectric Breakdown C. Chen, W. Shih, H. Huang (National Tsing-Hua University) and F. Chiu (Ming Chuan University)
o   1003   The Degradation of Thin Silicon Dioxide Film Subjected to Pulse Voltage Stresses at Nanoscale Y. Wu, J. Lin, S. Chang and C. Huang (National Chi Nan University)
o   1004   Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol-Gel Method A. S. Clair (Kurukshetra University), P. Khanna (Central Electronics Research Engineering Institute), A. Kumar, M. Kumar and D. Kumar (Kurukshetra University)
o   1005   Effect of Processing Conditions on the Electrical Characteristics of Atomic Layer Deposited Al2O3 and HfO2 Films J. Rafí, M. Zabala, O. Beldarrain and F. Campabadal (Institut de Microelectronica de Barcelona (CNM-CSIC))
o   1006   Relaxation of Photoexcitations in Optically Excited Systems Formed by 'Weakly Amorphous' or Crystalline Si Nanoparticles Embedded Within a Wide-Gap Dielectric Matrix V. Stuchinsky, T. Korchagina and V. Volodin (Institute of Semiconductor Physics)
o   1007   A Model for the Hump Feature Observed in the Capacitance-Voltage Characteristics of MOS Structures with Oxide-Hosted Si Nanoparticles V. Stuchinsky (Institute of Semiconductor Physics)
o   1008   Annealing Effect on the Resistance Switching Properties of TiN/SiO2/FeOx/Fe-Contented Electrode Structures L. W. Feng, C. Chang, Y. Chang, W. Chen, S. Wang, P. Chiang (National Chiao Tung University) and T. Chang (National Sun Yat-Sen University)
o   1009   Bulk Matter Resistivity of Ti Based TiAlN Dielectric Thin Films A. Razeghi and M. Hantehzadeh (Islamic Azad University)
o   1010   A Mechanism for Increasing Growth Rate of Undoped SACVD Film Y. V. Sokolov, J. Harrison and B. Harward (Fairchild Semiconductor Corp.)
o   1011   Ultra-Thin (AlCrTaTiZr)Nx/AlCrTaTiZr Bilayer Structures of High Diffusion Resistance to Cu Metallization S. Chang and D. Chen (National Chung Hsing University)
o   1012   CeO2 Optical Properties and Electrical Characteristics W. Shih, C. Chen (National Tsing-Hua University), F. Chiu, C. Lai (Ming-Chuan University) and H. Hwang (National Tsing-Hua University)
o   1013   New Metal-High-k-High-k-Oxide-Semiconductor Capacitors and Field Effect Transistors Using Al/Y2O3/Ta2O5/SiO2/Si Structure for Nonvolatile Memory Applications W. Shih (National Tsing-Hua University), F. Chiu (Ming Chuan University) and H. Hwang (National Tsing-Hua University)
 

Wednesday, April 28, 2010

Plaza A, 2nd Floor, Hyatt

Memory Devices

Co-Chairs: K. Kita and K. Cherkaoui
TimeAbs#Title and Authors
08:30   1015   Advanced FinFET Technologies: Extension Doping, Vth Controllable CMOS Inverters and SRAM Y. Liu, K. Endo, S. O'uchi, T. Matsukawa, K. Sakamoto and M. Masahara (AIST)
09:00   1016   Flexible Titanium Dioxide Memory N. Gergel-Hackett, L. Stephey, B. Dunlap, B. Hamadani, D. Gundlach and C. Richter (National Institute of Standards and Technology)
09:30   1017   Atomistic Guideline for MONOS-Type Memories with High Program/Erase Cycle Endurance K. Shiraishi, K. Yamaguchi, A. Otake and K. Kobayashi (University of Tsukuba)
10:00   1018   Highly Stable SrZrO3 Bipolar Resistive Switching Memory by Ti Modulation Layer M. Wu, M. Lin, Y. Yeh (National Chiao Tung University), C. Lin (Winbond Electronics Corporation) and T. Tseng (National Chiao Tung University)
10:20 Intermission (10 Minutes)
 

Materials and Applications

Co-Chairs: M. Sato and F. Ducroquet
TimeAbs#Title and Authors
10:30   1019   Nanocrystalline Materials: Optimization of Thin Film Properties J. Heitmann (NaMLab)
11:00   1020   The Direct Patterning of Organosilicate Interconnect Materials by Nanoimprint Lithography C. L. Soles (National Institute of Standards and Technology)
11:30   1021   MgO Tunnel Barriers in Magnetic Nanostructures and Devices R. Heindl, W. Rippard and M. Pufall (National Institute of Standards and Technology)
12:00   1022   PE-TEOS Wafer Bonding Enhancement at Low Temperature with a High-κ Dielectric Capping Layer C. Tan and G. Chong (NTU)
12:30   1023   Whisker Formation in Pb-Free Surface Finishes G. Stafford, J. Shin, M. Williams, K. Moon and W. Boettinger (National Institute of Standards and Technology)
 

Power and Energy Devices

Co-Chairs: K. Shiraishi
TimeAbs#Title and Authors
14:00   1024   (Invited) Surface Passivation of High-Voltage and High-Power Semiconductor Devices K. Shenai (University of Toledo)
14:30   1025   Fabrication and Properties of Three-Dimensionally Structured Back-Contact Thin Film Photovoltaic Devices D. Josell, C. Beauchamp, C. Hangarter, S. Jung, B. Hamadani, N. Zhitenev, T. P. Moffat and J. Guyer (National Institute of Standards and Technology)
15:00 Intermission (10 Minutes)
 

Nanodevice Noise

Co-Chairs: Z. Çelik-Butler and D. Misra
TimeAbs#Title and Authors
15:10   1026   Statistical Low-Frequency Noise Model for MOSFETs under Large Signal Cyclo-Stationary Excitation G. Wirth, R. Da Silva (UFRGS), P. Srinivasan and R. Brederlow (Texas Instruments)
15:40   1027   Temperature Dependence of Flicker (1/f) Noise in Analog and Digital 45 nm n-MOSFET Devices P. Srinivasan, K. Benaissa, F. Hou, D. Studdard, S. Martin, A. Marshall and J. McKee (Texas Instruments)
 

MEMS and Molecular Devices

Co-Chairs: N. Gergel-Hackett and Y. Obeng
TimeAbs#Title and Authors
16:00   1028   Microfabricated Nanocomposite Polymers and Thin Films for Flexible Substrate Microfluidics and MEMS B. Gray (Simon Fraser University)
16:30   1029   Metrology of Molecular Devices Made by Flip Chip Lamination C. A. Hacker, M. Coll and C. Richter (National Institute of Standards and Technology)
17:00   1030   Using Interfacial Chemistry to Improve the Performance of Organic Semiconductor Devices D. J. Gundlach (NIST)
17:30   1031   Incorporation of BCB into Wafer-Scale Assembly MMIC's D. M. Eaves, P. Chang-Chien, W. Luo, D. Farkas, X. Zeng, R. Elmadjian, D. Li, L. Dang, K. Hennig, C. Cheung, X. Lan, M. Battung, W. Lee, M. Parlee, J. Uyeda and M. Barsky (Northrop Grumman)
17:50 Session Concluding Remarks (5 Minutes)