217th ECS Meeting - Vancouver, Canada

April 25 - April 30, 2010

PROGRAM INFORMATION
 

E6 - Wide-Bandgap Semiconductor Materials and Devices 11

Electronics and Photonics/Sensor/Luminescence and Display Materials
 

Monday, April 26, 2010

Cortes Island, 1st Floor, Fairmont

ZnO

Co-Chairs: J. Kim and M. Mastro
TimeAbs#Title and Authors
14:00   1137   Studies of Electron Trapping in ZnO Semiconductor L. Chernyak and E. Flitsyian (University of Central Florida)
14:30   1138   The Effect of Moisture on the Bias Illumination Temperature Instability in GIZO TFTs and the Associated Investigation on Passivation Systems K. Lee, J. Jung, K. Son, J. Park, T. Kim, J. Kwon, B. Koo and S. Lee (Samsung Advanced Institute of Technology)
14:50   1139   Aluminum-Doped Zinc Oxide Thin Films for Opto-Electronic Applications N. Hirahara, B. Onwona-Agyeman and M. Nakao (Kyushu Institute of Technology)
15:10   1140   Investigation and Fabrication of Bottom Gate ZnO:Al TTFTs with Various Thicknesses of ZnO Buffer Layers Y. Lin, H. Lee and C. Lee (National Cheng Kung University)
15:30   1141   Solution Based Fabrication of ZnO Nanowires and Their Novel Heterostructures Array: Characterization and Applications K. Yong (POSTECH)
16:00   1142   High Responsivity Ultraviolet Photodetector Based on p-GaN/i-ZnO Nanorod /n-ZnO:In Nanorod C. Chen, J. Yan and C. Lee (National Cheng Kung University)
16:20   1143   Fabrication of p-Cu2O/n-ZnO Heterojunction Diode Using Electrodeposition Method M. Fariza, J. Sasano and M. Izaki (Toyohashi University of Technology)
16:40   1144   Epitaxial Growth of ZnO on LiAlO2 and LiGaO2 Substrates by Chemical Vapor Deposition C. Chen, L. Chang, M. Chou, J. Yu and T. Huang (National Sun Yat-Sen University)
 

Tuesday, April 27, 2010

Cortes Island, 1st Floor, Fairmont

III-Nitrides

Co-Chairs: L. Chernyak and K. Yong
TimeAbs#Title and Authors
08:40   1145   GaN-on-Si Electronics W. Johnson, A. Hanson and K. Linthicum (Nitronex Corporation)
09:10   1146   Control of Polarization Fields in III-Nitride Nanowire Devices M. Mastro (Naval Research Laboratory), B. Simpkins, J. Hite, C. Eddy Jr. (NRL), J. Kim, J. Kim (Korea University) and J. Ahn (University of Korea)
09:40 Intermission (20 Minutes)
10:00   1147   Light Extraction Enhancement of n-Side Up Light-Emitting Diodes Without Electrodes Covering by Wafer Bonding and Textured Surfaces R. Horng (National Cheng Kung University), Y. Lu (Institute of Precision Engineering, National Chung Hsing University) and D. Wuu (National Chung Hsing University)
10:20   1148   AlGaN/GaN HEMT Based Biosensor S. Alur, T. Gnanaprakasa, Y. Wang, Y. Sharma, J. Dai, J. Hong, A. L. Simonian, M. Bozack, C. Ahyi and M. Park (Auburn University)
10:40   1149   Development of Enhancement Mode AlN/Ultrathin AlGaN/GaN HEMTs by Selective Wet Etching T. Anderson (Naval Research Laboratory), M. Tadjer (University of Maryland), M. Mastro, J. Hite, K. Hobart, C. Eddy and F. Kub (Naval Research Laboratory)
11:10   1150   Fabrication of the Metal-Oxide-Semiconductor Au/Ga2O3/GaN Nanowires C. Hsieh and L. Chou (NTHU)
11:30   1151   ZnO Nanorod/p-GaN Heterostructured Light-Emitting Diodes Passivated by Using a Photoelectrochemical Method J. Yan, C. Chen and C. Lee (National Cheng Kung University)
 

SiC and Related Materials

Co-Chairs: T. Anderson and W. Johnson
TimeAbs#Title and Authors
14:00   1152   Grand Challenges in Silicon Carbide Material and Devices K. Shenai (University of Toledo)
14:30   1153   Etch Pits of 4H-Silicon Carbide Surface Formed Using Chlorine Trifluoride Gas H. Habuka, K. Furukawa, K. Tanaka, Y. Katsumi (Yokohama National University), N. Takechi, K. Fukae (Kanto Denka Kogyo) and T. Kato (National Institutes of Advanced Science and Technology)
14:50   1154   AlN Nano-Island Interlayers for High Efficiency GaN-Based Light-Emitting Diodes S. Kim, H. Oh and J. Baek (Korea Photonics Technology Institute)
15:10 Intermission (20 Minutes)
15:30   1155   A-Plane GaN for Hydrogen Sensing Applications H. Kwang (Korea Electronics Technology Institute), W. Lim, S. Pearton, Y. Wang, F. Ren (University of Florida), J. Yang (Dankook University) and S. Jang (Dankook Univeristy)
16:00   1156   The Application of Palladium Oxide-Based Silicon Carbide Gas Sensors for Aerospace Applications G. W. Hunter, J. Xu, P. Neudeck (NASA Glenn Research Center), L. Chen (Ohio Aerospace Institute), B. Ward and D. Makel (Makel Engineering, Inc)
16:20   1157   Passivation of Deep Levels at the SiO2/SiC Interface A. F. Basile (Simon Fraser University), J. Rozen (Vanderbilt University), X. Chen (Simon Fraser University), S. Dhar (Cree Inc.), J. R. Williams (Auburn University), L. C. Feldman (Rutgers University) and P. M. Mooney (Simon Fraser University)
16:40   1158   Analysis the Suppression of Ag Agglomeration by Mg Additive Atoms Y. Song, J. Son and J. Lee (POSTECH)
 

Exhibit and Poster Hall, Conference Floor, Fairmont

General Poster Session

Co-Chairs:
TimeAbs#Title and Authors
o   1159   Formation of Self-Positioned Phosphor Layer for Angular Color Homogeneity of White Light-Emitting Diodes K. Lee (Korea Photonics Technology Institute), S. Kim, J. Kim, S. Song (KOPTI) and J. Moon (Chonnam Nat'l Univ.)
o   1160   Dy3+ Emission from GaAlN Powder and Radio-Frequency Sputtered Thin Film J. H. Tao, J. McKittrick and J. Talbot (University of California, San Diego)
o   1161   Electron Paramagnetic Resonance Studies of Shallow Donors Behavior in Hydrogenated ZnO Films L. Larina, N. Tsvetkov, J. Yang (Korea Advanced Institute of Science and Technology), K. Lim (Advanced Institute of Science and Technology) and O. Shevaleevskiy (Institute of Biochemical Physics)
o   1162   Optical Properties of Pure and Doped Electrodeposited ZnO Films I. Enculescu, E. Matei, N. Preda, M. Sima, M. Enculescu (National Institute of Materials Physics) and R. Neumann (GSI Darmstadt Germany)
o   1163   Formation Mechanism and Reliability of Cu/Ge/Pd Ohmic Contact to n-Type InGaAs E. Chang, Y. C. Lin and S. Shie (National Chiao Tung University)
o   1164   InGaN Light-Emitting Diode Structure on a Photoelectrochemical Treated GaN:Si Layer K. Chen, C. Lin and C. Lin (National Chung Hsing University)
o   1165   InGaN-Based Light Emitting Diodes with an AlN Sacrificial Buffer Layer for Chemical Lift-Off Process C. Lin, J. Dai and M. Lin (National Chung Hsing University)
o   1166   Low-Resistivity and High-Transmittance Indium Gallium Zinc Oxide Films for UV Light-Emitting Diodes H. Chang, K. Huang, S. Chen, L. Shan and M. Wu (National Tsing Hua University)
o   1167   Fabrication of IGZO Sputtering Target and Its Applications to the Preparation of Thin-Film Transistor Devices C. C. Lo and T. Hsieh (National Chiao Tung University)
o   1168   Spatially Resolved Cathodoluminescence Spectroscopy of ZnO Microparticles T. Hirai (Ritsumeikan University), Y. Harada (Osaka Institute of Technology), N. Ohno (Osaka Electro-Communication University), Y. Sawada and T. Itoh (Osaka University)
o   1169   Drain Leakage Current in MuGFETs at High Temperatures J. Giroldo Jr. and M. Bellodi (Centro Universitário da FEI)
o   1170   Study of the Number of Quantum Well Pairs for High Bright AlGaInP-Based Light Emitting Diodes H. Oh, S. Kim (Korea Photonics Technology Institute), J. Kwak (Sunchon National University) and J. Baek (Korea Photonics Technology Institute)
o   1171   npn Heterostructural Optoelectronic Switch with Collector Confinement Layer D. Guo (Air Force Academy)
o   1172   pnpn and npn Heterostructural Optoelectronic Devices D. Guo (Air Force Academy)
 

Wednesday, April 28, 2010

Exhibit and Poster Hall, Conference Floor, Fairmont

Energy Devices

Co-Chairs: S. Jang
TimeAbs#Title and Authors
10:00   1173   Cuprous Oxide Solution Preparation and Application to Cu2O-ZnO Solar Cells A. Du Pasquier, Z. Duan, N. Pereira and Y. Lu (Rutgers, The State University of New Jersey)
10:20   1174   Spray Pyrolysis Based CIGS Solar Cell K. Song, J. Suh, C. Ham, J. Cho and E. Bae (Electronics and Telecommunications Research Institute)
10:40   1175   Photovoltaic Properties of TiO2/Cu2O Hetero-Structure J. G. Lu and D. Li (USC)
11:00   1176   Indium and Gallium Incorporation Mechanism during Electrodeposition of Cu(In,Ga)Se2 Thin Film J. Li, F. Liu, Y. Lai, Z. Zhang and Y. Liu (Central South University)
11:20   1177   CIGSS Thin Film Solar Cells by Simple Powder Evaporation Process J. Suh, K. Song, C. Ham, J. Cho and E. Bae (Electronics and Telecommunications Research Institute)
11:40   1178   A Study on CdTe Thin Films for Photovoltaic Cells by a Solution-Based Continuous Flow Reactor Process J. Lee, E. Bae (Yeungnam University), S. Han, C. Chang (Oregon State University) and S. Ryu (Yeungnam University)