217th ECS Meeting - Vancouver, Canada

April 25 - April 30, 2010

PROGRAM INFORMATION
 

E7 - Graphene, Ge/III-V, and Emerging Materials for Post-CMOS Applications 2

Dielectric Science and Technology
 

Monday, April 26, 2010

Waddington, Conference Floor, Fairmont

Graphene Devices and Integration

Co-Chairs: P . Srinivasan, Y. Obeng, Z. Karim, S. DeGendt, D. Misra
TimeAbs#Title and Authors
08:00 Introductory Remarks (5 Minutes)
08:05   1179   Graphene RF Transistor Performance K. A. Jenkins, Y. Lin, D. Farmer, C. Dimitrakopoulos, H. Chiu, P. Avouris and A. Grill (IBM T.J. Watson Research Center)
08:45   1180   Graphene Process Integration for Post-CMOS Devices J. Peterson (Intel Corporation), M. Sprinkle (Georgia Institute of Technology), J. Yang (Massachusetts Institute of Technology), J. Williams (Stanford University), M. Rodriguez (State University of New York at Albany), Y. Yang, R. Murali, C. Berger (Georgia Institute of Technology), B. Thiel (State University of New York at Albany), K. Berggren (Massachusetts Institute of Technology), J. Meindl, W. De Heer (Georgia Institute of Technology) and G. Bourianoff (Intel Corporation)
09:25   1181   Novel Device Concepts for Nanotechnology: The Nanowire Pinch-Off Fet and Graphene Tunnelfet B. Sorée, W. Magnus (IMEC), M. Szepieniec (Tyndall Nationale Institute), W. Vandenberghe, A. Verhulst, G. Pourtois, G. Groeseneken, S. De Gendt and M. Heyns (IMEC)
10:05 Discussion (20 Minutes)
 

Graphene Material Preparation, Synthesis and Growth

Co-Chairs: R M Wallace, Tony Low and Nai-Cheng Yeh
TimeAbs#Title and Authors
10:25   1182   Growth Kinetics and Defects of CVD Graphene on Cu L. Colombo (Texas Instruments Incorporated), X. Li, B. Han, W. Cai, Y. Zhu and R. Ruoff (The University of Texas at Austin)
11:05   1183   Transition Metal Catalyst-Assisted LPCVD and APCVD Syntheses of Large Area Mono- and Few Layer Graphene S. Bhaviripudi, A. Reina, K. Kim, K. Zhang and J. Kong (MIT)
11:45   1184   Optimization of Wafer-Scale Graphene Epitaxy on SiC for High Frequency Devices A. Grill, C. Dimitrakopoulos, Y. Lin, M. Freitag, S. Han, Z. Chen, K. A. Jenkins, Y. Zhu, T. McArdle, J. Ott, P. Avouris and R. Wisnieff (IBM T.J. Watson Research Center)
 

Graphene Interfaces and Junctions

Co-Chairs: Eric Cockayne, Wei Wang and Joseph Lyding
TimeAbs#Title and Authors
13:30   1201   Electronic Transport Properties of Graphene pn Junctions and Its Electron Optics Devices T. Low and M. Lundstrom (Purdue University)
14:10   1202   Dielectric Interfaces for Graphene-Based Devices A. Pirkle, B. Lee, C. Floresca, S. McDonnell (University of Texas at Dallas), L. Colombo (Texas Instruments Incorporated), J. Kim, M. Kim, Y. Chabal and R. M. Wallace (University of Texas at Dallas)
14:50   1203   Graphene Veselago Device: Fabrication and Characterization of Graphene p-n Junction Devices J. Lee (University at Albany-SUNY)
 

Graphene Transport

Co-Chairs: G. Iannaccone, Myung-Ho Bae and Y. Chen
TimeAbs#Title and Authors
15:40   1185   Spin Transport in Single- and Multilayer Graphene M. Shiraishi (Osaka University)
16:20   1186   Formation and Transport of Correlated Electron States at Room Temperature in Graphene Bilayers J. B. Shumway (Arizona State University) and M. Gilbert (University of Illinois)
19:00 Plenary Session (120 Minutes)
 

Tuesday, April 27, 2010

Waddington, Conference Floor, Fairmont

Thermal Behavior of Graphene and Graphene Based Devices

Co-Chairs: Luigi Colombo, Sreekar Bhaviripudi and Alain Diebold
TimeAbs#Title and Authors
08:00   1188   Infrared Images of Heat Dissipation in Graphene Ambipolar Transistors M. Bae, Z. Ong, D. Estrada and E. Pop (University of Illinois at Urbana-Champaign)
08:40   1189   Extraordinary Thermal Conductivity of Graphene: Applications in Thermal Management A. A. Balandin (University of California - Riverside)
09:20   1190   Thermal Transport in Graphene Nanostructures Y. P. Chen (Purdue University)
10:00 Discussion (10 Minutes)
 

Metrology and Characterization of Graphene

Co-Chairs: Jeff Peterson, Ji Ung Lee and Masashi Shiraishi
TimeAbs#Title and Authors
10:10   1191   Ultra-High Vacuum Processing and Characterization of Chemically Functionalized Graphene M. C. Hersam (Northwestern University)
10:50   1192   Advances in Graphene Metrology A. C. Diebold, T. Zhang and F. Nelson (College of Nanoscale Science and Engineering)
11:30   1193   Characterization of a Single Metal Impurity in Graphene E. Cockayne, G. Rutter and J. Stroscio (National Institute of Standards & Technology)
12:10   1194   Noise Reduction in Graphene Transistors A. A. Balandin (University of California - Riverside)
12:30 Intermission (60 Minutes)
 

Spectroscopic Studies on Graphene

Co-Chairs: Keith Jenkins, Alex Balandin and John Shumway
TimeAbs#Title and Authors
13:30   1195   Scanning Tunneling Spectroscopic Studies of the Effects of Dielectric Gate Materials on the Local Electronic Characteristics of Graphene N. Yeh, M. L. Teague, M. W. Bockrath (California Institute of Technology), J. Velasco and C. Lau (University of California Riverside)
14:10   1196   Probing the Underlying Physics of Graphene with Raman Spectroscopy I. Calizo, G. Cheng (NIST), J. Simpson (Towson University) and A. R. Hight Walker (NIST)
14:50   1197   Graphene Quantum Size Effect, Zigzag Edge States and Substrate Semitransparency J. Lyding, K. Ritter, K. He, J. Koepke, S. Schmucker, J. Wood (University of Illinois), Y. Xu (Zhejiang University) and N. Aluru (University of Illinois)
15:30 Discussion (10 Minutes)
 

Material Properties and Graphene Based Logic Devices

Co-Chairs: Bart Soree, A. Hight Walker and Alfred Grill
TimeAbs#Title and Authors
15:40   1198   Graphene as a Material for Nanoelectronics G. Iannaccone, G. Fiori, M. Cheli, P. Michetti, M. Macucci, A. Betti and P. Marconcini (University of Pisa)
16:20   1199   Reconfigurable Graphene Logic S. Tanachutiwat and W. Wang (University at Albany)
17:00   1200   Optical and Electrical Properties of Percolated Graphene Networks from Liquid Exfoliation of Graphite J. Obrzut, D. Pristinski (National Institute of Standards and Technology) and M. Yoonessi (Ohio Institute of Aerospace)
17:40   1187   Bilayer Graphene System: Transport and Reliability T. Yu, E. Lee, B. Briggs, B. Nagabhirava and B. Yu (State University of New York at Albany)
 

Wednesday, April 28, 2010

Waddington, Conference Floor, Fairmont

Ge/SiGe Based Devices

Co-Chairs: Zia Karim, Kei May Lau, and Dae-Hyun Kim
TimeAbs#Title and Authors
08:00   1204   High Mobility SiGe Channel NonPlanar Devices C. Hobbs, C. Smith (SEMATECH), H. Adhikari (Global Foundries), S. Lin (UMC), I. Ok (SEMATECH), K. Akarvardar (Global Foundries), S. Lee, B. Coss, C. Young, M. Cruz, P. Majhi and R. Jammy (SEMATECH)
08:40   1205   Trap-Assisted Tunneling in Deep-Submicron Ge pFET Junctions G. Eneman, M. Bargallo Gonzalez, G. Hellings, B. De Jaeger, G. Wang, J. Mitard, K. DeMeyer, C. Claeys, M. Meuris, M. Heyns, T. Hoffmann and E. Simoen (IMEC)
09:00   1206   Tetragonal ZrO2-Gated Ge MOS Capacitors Fabricated on Si Substrate M. Wu, L. Chen, J. Wu and Y. Wu (National Tsing Hua University)
09:20   1207   The Effect of Applied Magnetic Fields on Silicon Transport in Liquid Phase Diffusion Growth of SiGe N. Armour, A. Kidess and S. Dost (University of Victoria)
09:40 Intermission (20 Minutes)
 

GaAs/InGaAs based Devices

Co-Chairs: Chris Hobbs, Wolfgang Stolz and Bernd Schiller
TimeAbs#Title and Authors
10:00   1208   III-V Devices for Advanced CMOS N. Waldron, D. Nguyen, D. Lin, G. Brammertz, G. Hellings, B. Vincent, A. Firrincieli, S. Sioncke, B. De Jaeger, G. Wang, R. Krom, J. Mitard, W. Wang, M. Passlack, M. Heyns, M. Caymax, M. Meuris, S. Biesemans and T. Hoffman (IMEC)
10:40   1209   (Invited) Scaling of InGaAs MOSFETs into Deep-Submicron P. Ye and Y. Wu (Purdue University)
11:20   1210   InGaAs HFETs for Beyond-the-Roadmap CMOS D. Kim (Teledyne Scientific & Imaging, LLC) and J. A. del Alamo (MIT)
12:00   1211   Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs M. J. Hopstaken, D. Pfeiffer, M. Gordon, E. Kiewra, Y. Sun, D. Sadana (IBM T.J. Watson Research Center), T. Topuria, P. Rice (IBM Almaden Research Center), P. Ronsheim (IBM Systems & Technology Group), C. Gerl, C. Marchiori, M. Richter, M. Sousa and J. Fompeyrine (IBM Zurich Research Laboratory)
12:20 Discussion (10 Minutes)
 

III-V Heterostructures on Si substrates

Co-Chairs: Niamh Waldron, Geert Eneman and Peide Ye
TimeAbs#Title and Authors
13:30   1212   Novel Ga(NAsP)-Based Heterostructures for the Integration of Optoelectronic Functionalities on (001) Si-Substrate B. Kunert (NAsP III/V GmbH), K. Volz and W. Stolz (Philipps-University Marburg)
14:10   1213   Hetero-Epitaxy of III-V Compounds by MOCVD on Silicon Substrates C. Tang, Z. Zhong and K. Lau (ECE)
14:50   1214   Growth of III/V Materials on Large Area Silicon B. Schineller and M. Heuken (AIXTRON AG)
15:30   1215   Merging Standard CVD Techniques for GaAs and Si Epitaxial Growth A. Sammak, W. De Boer, A. Van der Bogaard and L. Nanver (TUDelft)
15:50 Concluding Remarks (10 Minutes)