221st ECS Meeting - Seattle, Washington

May 6 - May 10, 2012

PROGRAM INFORMATION

 

E1 - Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing

 

Monday, May 7, 2012

Room 201, Level 2, Washington State Convention Center

Advanced Nanomaterials and Processing

Co-Chairs: D. Misra and H. Iwai
TimeProgr#Title and Authors
13:55 Introductory Remarks (5 Minutes)
14:00   677   New Dielectric Nanomaterials Fabricated from Nanosheet Technique M. Osada and T. Sasaki (National Institute for Materials Science)
14:30   678   Semiconductor Nanocrystals Embedded in High-k Materials J. Heitmann (TU Bergakademie Freiberg)
15:00 Intermission (10 Minutes)
15:10   679   Low-Temperature Growth of Ge Nanowires by Vapor-Liquid-Solid Chemical Vapor Deposition M. Simanullang, A. Seyhan, K. Usami, T. Kodera, Y. Kawano, and S. Oda (Tokyo Institute of Technology)
15:40   680   Experimental Determination of the Electronic Density of States for Graphene Oxide B. W. Alphenaar (University of Louisville)
16:10   681   Nanocontact Epitaxy of Thin Films on Si Substrates Using Nanodot Seeds Fabricated by Ultrathin SiO2 Film Technique Y. Nakamura (Osaka University) and M. Ichikawa (University of Tokyo)
 

Tuesday, May 8, 2012

Room 201, Level 2, Washington State Convention Center

High-k on High-Mobility Substrates

Co-Chairs: J. Heitmann and B. Alphenaar
TimeProgr#Title and Authors
08:00   682   Mechanism of Vfb Shift in HfO2 Gate Stack by Al Diffusion from (TaC)1-xAlx Gate Electrode T. Nabatame (National Institute for Materials Science), M. Kimura, H. Yamada (Shibaura Institute of Technology), A. Ohi (National Institute for Materials Science), T. Ohishi (Shibaura Institute of Technology), and T. Chikyow (National Institute for Materials Science)
08:30   683   High-k on InAs 100 and 111B Surfaces E. Lind, J. Wu, and L. Wernersson (Lund University)
09:00   684   Scanning Probe Analysis of Dielectrics on High Mobility Substrates S. H. Olsen and R. Kapoor (Newcastle University)
09:30 Intermission (10 Minutes)
09:40   685   Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP Properties Translate to In0.53Ga0.47As MOSFET Characteristics K. Cherkaoui, V. Djara, É. O'Connor, J. Lin, M. A. Negara, I. M. Povey, S. Monaghan, and P. K. Hurley (University College Cork)
10:10   686   Effects of the Interfacial Layer on Electrical Properties of TiO2-based High-k Dielectric Composite Films C. Kim and I. Yun (Yonsei University)
 

Characterization of Dielectrics

Co-Chairs: T. Nabatame and E. Lind
TimeProgr#Title and Authors
10:30   687   In Situ XPS Study on ALD (Atomic Layer Deposition) of High-k Dielectrics J. Kim (The University of Texas at Dallas)
11:00   688   Admittance Spectroscopy of Si/LaLuO3 and Si/GdSiO MOS Structures F. Ducroquet (Minatec - CNRS), O. Engström (Chalmers University of Technology), H. D. Gottlob (AMO GmbH), J. J. Lopes, and J. Schubert (Peter Grünberg Institute 9)
11:30   689   Comprehensive Demonstration and Physical Origin of HfO2 Gate Stacks: Band Alignment, VFB Shift and Fermi Level Pinning X. L. Wang, W. Wang, K. Han (Chinese Academy of Sciences), J. Zhang (North China University of Technology), J. Xiang, X. Ma, H. Yang, D. Chen, and T. Ye (Chinese Academy of Sciences)
11:50   690   Electrical and Optical Characterization of GeON Layers with high-k Gate Stacks on Germanium for Future MOSFETs S. N. Murad, P. T. Baine, J. H. Montgomery, D. W. McNeill, S. Mitchell, B. Armstrong (Queens University Belfast), and M. Modreanu (University College Cork)
12:10   691   Impact of Si Diffusion Barrier Layer Formed on TiN Surface by In Situ Oxygen Treatment Process for Advanced Gate-First Metal/High-k Stacks N. Kitano (Canon Anelva Corporation), K. Chikaraishi, H. Arimura, T. Hosoi, T. Shimura (Osaka University), T. Seino (Canon Anelva Corporation), H. Watanabe (Osaka University), and T. Nakagawa (Canon Anelva Corporation)
12:30   692   Fabrication and Investigation of Metal-Insulator-Insulator-Metal (MIIM) Tunnel Diodes Using Atomic Layer Deposition N. Alimardani, E. Cowell III, J. Wager, and J. Conley Jr. (Oregon State University)
 

Power Devices and Systems

Co-Chairs: T. Chikyo and H. Iwai
TimeProgr#Title and Authors
14:00   693   High-Temperature-Operating Dielectrics of Perovskite Oxides for Powder Device Applications Y. Noguchi, T. Oguchi, Y. Kitanaka, and M. Miyayama (Research Center for Advanced Science and Technology)
14:30   694   SiC and GaN Power MOSFETs for Power Electronics Switching K. Shenai (The University of Toledo)
15:00   695   SiO2 Thickness Dependency of C-V Dispersion in Stacked Al/HfO2/SiO2/4H-SiC Capacitors C. Hsu and J. Hwu (National Taiwan University)
15:20 Intermission (10 Minutes)
 

NanoFETs and Memory Devices

Co-Chairs: D. Bauza and K. Shenai
TimeProgr#Title and Authors
15:30   696   Stress Techniques in Advanced Transistor Architectures: FinFETs and Implant-Free Quantum Well Transistors G. Eneman, L. Witters, N. Collaert, J. Mitard, G. Hellings, A. De Keersgieter, A. Hikavyy, B. Vincent, P. Favia, H. Bender, A. Veloso, T. Chiarella, M. Togo, R. Loo, K. De Meyer, A. Mercha, N. Horiguchi, and A. Thean (imec)
16:00   697   The Impact of Mechanical Strain on Reliability Issue for PD SOI MOSFETs W. Lo, T. Chang, C. Dai, W. Chung, J. Tsai (National Sun Yat-Sen University), C. Chen (National Chiao Tung University), O. Cheng, and C. Huang (United Microelectronics Corporation)
16:20   698   Investigation of Mechanisms and Random Telegraph Signals in Static and Dynamic BTI Stress on PD SOI MOSFETs C. Chen (National Chiao Tung University), T. Chang (National Sun Yat-Sen University), H. Lo (National Chiao Tung University), W. Lo (National Sun Yat-Sen University), S. Ho (National Chiao Tung University), C. Dai (National Sun Yat-Sen University), O. Cheng (United Microelectronics Corporation), and C. Huang (United Microelectronics Corporation, Tainan Science Park)
16:40   699   Investigation of Random Telegraph Signal with PD SOI MOSFETs H. Lo (National Chiao Tung University), T. Chang (National Sun Yat-Sen University), C. Chen, S. Ho (National Chiao Tung University), W. Lo (National Sun Yat-Sen University), O. Cheng, and C. Huang (United Microelectronics Corporation)
17:00   700   Switching and Mechanical Damage of Cu/TaOx/Pt Resistive Devices under High Negative Voltage Stress T. Liu, Y. Kang, M. Verma, and M. K. Orlowski (Virginia Polytechnic Institute and State University)
17:20   701   Improve Resistive Switching Characteristics in Mixed HfO2 and Al2O3 Layer by Layer Structure C. Huang, M. Wu, D. Panda, and T. Tseng (National Chiao Tung University)
17:40   702   Coexistence of Bipolar and Unipolar Switching in Cu/TaOx/Pt Resistive Devices T. Liu, M. Verma, Y. Kang, and M. K. Orlowski (Virginia Polytechnic Institute and State University)
 

Ballroom 6E, Level 6, Washington State Convention Center

Dielectrics for Nanosystems: Poster Session

Co-Chairs: D. Misra and Z. Chen
TimeProgr#Title and Authors
o   703   Ge MOS Capacitor Fabricated by Plasma Enhanced Atomic Layer Deposition at Room Temperature F. Hirose, M. Degai, K. Kanomata, and K. Momiyama (Yamagata University)
o   704   Coaxial-Structured Solar Cells with Silicon Nanostructures H. Li (National Chiao Tung University), K. Chen (St. John's University), S. Chiou, H. Liu (National Chung Hsing University), C. Juan (St. John's University), and H. Cheng (National Chiao Tung University)
o   705   A New Mechanism of Symmetry of Current-Voltage Characteristics for High-k Dielectric Capacitor Structures W. Lau (Nanyang Technological University-Retired)
o   706   Mechanism of Device Degradation for InGaZnO TFTs by the Drain Bias Stress in Dark and Light Illumination S. Huang, T. Chang, L. Lin, M. Yang (National Sun Yat-Sen University), K. Yang (University of Toronto), M. Wu, M. Chen (National Sun Yat-Sen University), and F. Jian (National Chiao Tung University)
o   707   Polysilicon Nanowires Biosensors for pH Measurement and DNA Detection Utilizing High-k Dielectric Sensing Membrane C. Wu (National Chiao Tung University), P. Hsu (National Chi Nan University), C. Wang, T. Liao, H. Cheng (National Chiao Tung University), and Y. Wu (National Chi Nan University)
o   708   HfTiON as Charge-Trapping Layer for Nonvolatile Memory Applications X. Huang and P. Lai (The University of Hong Kong)
o   709   Hybrid Orientation Substrate Fabrication Using Electron Beam Induced Orientation Selective Epitaxial Growth of CeO2(100) and (110) Areas on Si(100) Substrates T. Inoue and S. Shida (Iwaki Meisei University)
o   710   Investigation on Hot Carrier Degradation on TixN1-x/HfO2 MOSFETs J. Tsai, T. Chang, W. Lo, C. Dai (National Sun Yat-Sen University), C. Chen, H. Chen (National Chiao Tung University), J. Hung (National Sun Yat-Sen University), O. Cheng, and C. Huang (United Microelectronics Corporation)
o   711   Investigation on AC PBI and NBI Stress on TixN1-x/HfO2 MOSFETs S. Ho (National Chiao Tung University), T. Chang (National Sun Yat-Sen University), C. Wu (National Chiao Tung University), W. Lo (National Sun Yat-Sen University), C. Chen (National Chiao Tung University), C. Dai, J. Tsai (National Sun Yat-Sen University), H. Lo (National Chiao Tung University), O. Cheng, and C. Huang (United Microelectronics Corporation)
o   712   Changes in SiO2/Si(100) Interface Structure Induced by Forming Gas Annealing T. Suwa, Y. Kumagai, A. Teramoto (Tohoku University), T. Muro, T. Kinoshita (Japan Synchrotron Radiation Research Institute), S. Sugawa, T. Hattori, and T. Ohmi (Tohoku University)
o   713   Mechanism of Difficulty to Study the Physics of Leakage Current Reduction by Nitridation of Silicon before High-k Dielectric Deposition Due to Change in Nucleation Characteristics W. Lau (Nanyang Technological University-Retired)
o   714   Investigating the Resistance Switching Characteristics for BON-Based Thin Film Nonvolatile Memory Application H. Tseng, T. Chang, K. Cheng, J. Huang, and Y. Chen (National Sun Yat-Sen University)
o   715   Formation of CoSi2/CoSixNy Nanocrystals for Nonvolatile Memory Application J. Huang, T. Chang, J. Lu, S. Chen, T. Liu, Y. Chen, P. Yang, H. Huang, D. Gan, N. Ho (National Sun Yat-Sen University), Y. Shi (Nanjing University), and S. Sze (National Sun Yat-Sen University)
o   716   Low Work Function between Erbium Silicide and n-type Silicon Control by Cap Film Stress H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
o   717   Solution Based Hybrid Dielectric for Soluble ZnO TFTs J. Oh, S. Lim, C. Kim, K. Cho, and S. An (Electronics and Telecommunications Research Institute)
o   718   A Compact CMOS 3-D Magnetic Field Sensor G. Wand and D. Misra (New Jersey Institute of Technology)
o   719   The Investigation of Molybdenum Doping in Silicon Oxide Based Resistive Switching Memory Y. Chen, T. Chang, J. Huang, H. Tseng, P. Yang, A. Chu, J. Yang, H. Huang, D. Gan, N. Ho (National Sun Yat-Sen University), M. Tsai (Industrial Technology Research Institute), and S. Sze (National Sun Yat-Sen University)
o   720   Investigation of Antimony Oxide Films Deposited by Atomic Layer Deposition B. Kalkofen, V. Mothukuru (University of Magdeburg), M. Klingsporn (IHP), and E. P. Burte (University of Magdeburg)
o   721   Study of the SiOX Films Deposition Method in Cat-CVD System J. Park, K. Keum, S. Kang, T. Song, and W. Hong (University of Seoul)
o   722   Voltage-Pulse-Triggered Switching Behavior in VO2 Devices on Silicon G. Seo (Massachusetts Institute of Technology), B. Kim (University of Science and Technology), C. Ko (Harvard University), Y. Lee (Pukyong National University), S. Ramanathan (Harvard University), and H. Kim (Massachusetts Institute of Technology)
o   723   Electrical Properties of ZnO Active and SOG Passivation Layer by Inkjet-Printing S. Lim, J. Oh, S. Kang, S. An, and K. Cho (Electronics and Telecommunications Research Institute)
o   724   Impact of High-κ TaOx Thickness on the Resistive Memory Properties in IrOx/TaOx/WOx/W Structure A. Prakash, S. Maikap (Chang Gung University), W. Chen, H. Lee, F. Chen, M. Kao, and M. Tsai (Industrial Technology Research Institute)
o   725   Improvement on Interface Quality and Reliability Properties of HfAlOx MIS Capacitor with Dual Plasma Treatment K. Chang (National Chaio Tung University), T. Chang, P. Chang, B. Huang (National Chiao Tung University), C. Wu (Chung Hua University), and I. Deng (Technology and Science Institute of Northern Taiwan)
o   726   A Unified Schottky-Poole-Frenkel Model for Capacitor Structures Involving High-k Dielectric Materials W. Lau (Nanyang Technological University-Retired)
o   727   Switching Characteristics in Pt/TaON/TiN Films for Nonvolatile Memory Applications M. Chen, T. Chang (National Sun Yat-Sen University), Y. Chiu (National Chiao Tung University), S. Chen (National Tsing Hua University), S. Huang, and S. Sze (National Sun Yat-Sen University)
 

Wednesday, May 9, 2012

Room 201, Level 2, Washington State Convention Center

Memory Devices and Technology

Co-Chairs: Z. Chen and Y. Liu
TimeProgr#Title and Authors
08:00   728   FinFET Flash Memory Technology Y. Liu (AIST), T. Kamei (Meiji University), T. Matsukawa, K. Endo, S. O'uchi, J. Tsukada, H. Yamauchi, Y. Ishikawa (AIST), T. Hayashida (Meiji University), K. Sakamoto (AIST), A. Ogura (Meiji University), and M. Masahara (AIST)
08:30   729   Analysis of Cycling Induced Interface Degradation in Si Nanocrystal Memory Devices D. Jiang, M. Zhang, Z. Huo, Z. Sun, L. Jin, J. Bai, Y. Wang, J. Liu (Chinese Academy of Sciences), B. Zhang (Grace Semiconductor Manufacturing Corporation), J. Chen (Anhui University), and M. Liu (Chinese Academy of Sciences)
08:50   730   Modeling of Copper Diffusion in Amorphous Aluminum Oxide in CBRAM Memory Stack K. Sankaran, S. Clima, L. Goux, M. Mees, J. A. Kittl, M. Jurczak, L. Altimime (imec), G. Rignanese (UCL), and G. Pourtois (imec)
09:10   731   Ge-doped Hafnia-based Dielectrics for Non-Volatile Memory Applications L. Khomenkova, X. Portier (CIMAP/ CEA/CNRS/Ensicaen/UCBN), M. Carrada, C. Bonafos (CEMES/CNRS, Université de Toulouse), B. Sahu, A. Slaoui (InESS/ULP/CNRS), and F. Gourbilleau (CIMAP/ CEA/CNRS/Ensicaen/UCBN)
09:30 Intermission (10 Minutes)
09:40   732   Unipolar Resistive Switching Memory Using IrOx/Al2O3/SiO2/p-Si MIS Structure W. Banerjee, S. Maikap, D. Jana (Chang Gung University), Y. Chen, and J. Yang (National Taiwan University)
10:00   733   Resistive Switching Characteristics of ZnO for Nonvolatile Memory Applications J. He, W. Chang, J. Ke, and J. Durán Retamal (National Taiwan University)
10:20   734   Forming Free Resistive Switching Memory Using IrOx/GdOx/W Cross-Bar Structure D. Jana, A. Prakash, W. Banerjee, and S. Maikap (Chang Gung University)
 

Dielectric Processing

Co-Chairs: S. Oda and M. Osada
TimeProgr#Title and Authors
10:40   735   Ozone Assisted ALD of Doped ZnO as a Transparent Metal Oxide H. Yuan (People's Republic of China), B. Luo, W. L. Gladfelter, and S. Campbell (University of Minnesota)
11:10   736   Carrier Transport thorough Grain Boundaries in Highly Transparent Conductive Ga-doped ZnO Films T. Yamamoto, H. Song, H. Makino, and N. Yamamoto (Kochi University of Technology)
11:40   737   Texturing and Tetragonal Phase Stabilization of ALD HfxZr1-xO2 Using a Cyclical Deposition and Annealing Scheme K. Tapily, S. Consiglio, R. D. Clark (Tel Technology Center America), R. Vasić, E. Bersch, I. Wells (College of Nanoscale Science and Engineering), J. Jordan-Sweet (IBM T.J. Watson Research Center), G. J. Leusink (TEL Technology Center America), and A. C. Diebold (College of Nanoscale Science and Engineering)
12:00   738   Electrical Properties of Silicon Nitride Using High Density and Low Plasma Damage PECVD Formed at 400ºC Y. Nakao, R. Kuroda, H. Tanaka, A. Teramoto, S. Sugawa, and T. Ohmi (Tohoku University)
12:20   739   New Metal Organic Gas Supply System by Using an Advanced Flow Control System M. Yamaji (Fujikin Incorporated), S. Yamashita (Tohoku University), A. Hidaka, M. Nagase, N. Ikeda (Fujikin Incorporated), S. Sugawa, and T. Ohmi (Tohoku University)
12:40   740   Low-frequency noise reduction in Si Nanowire MOSFETs K. Ohmori, W. Feng, R. Hettiarachchi (University of Tsukuba), Y. Lee, S. Sato, K. Kakushima (Tokyo Institute of Technology), M. Sato (University of Tsukuba), K. Fukunda (National Institute of Advanced Industiral Science and Technology), M. Niwa, K. Yamabe, K. Shiraishi (University of Tsukuba), H. Iwai (Tokyo Institute of Technology), and K. Yamada (University of Tsukuba)
 

Nanoelectromechanical Systems and MEMS

Co-Chairs: A. Khosla and D. Sameoto
TimeProgr#Title and Authors
14:00   741   Reliability of Microcantilever and Microbridge Gas Sensors for Chemical Detection P. J. Hesketh, R. Aguilar, I. Ellern, M. Navei, A. Pizzo (Georgia Institute of Technology), M. Allendorf (Sandia National Laboratories), J. Stetter, and M. Findlay (KWJ Engineering, Inc.)
14:30   742   Towards Higher Reliability in Cantilever-Based Sensing - High Data Rate and Orthogonal Sensors A. Boisen (Technical University of Denmark)
15:00   743   Micropatternable Multifunctional Nanocomposite Polymers for Flexible Soft NEMS and MEMS Applications A. Khosla and B. L. Gray (Simon Fraser University)
15:30 Intermission (10 Minutes)
15:40   744   Nano-Derived, Micro-Chemical Sensors for High-Temperature Applications E. M. Sabolsky, C. Wildfire, E. Ciftyurek, and K. Sabolsky (West Virginia University)
16:10   745   Engineering of Nanocomposite Materials for Sensing Applications A. Amini and B. Bahreyni (Simon Fraser University)
16:40   746   Dry Adhesives for MEMS Assembly, Manipulation and Integration: Progress and Challenges D. Sameoto (University of Alberta)
 

Technologies for Nanosystems

Co-Chairs: Y. Obeng and D. Misra
TimeProgr#Title and Authors
17:10   747   Impact of Thermal Stability of Isolation Liner on the Electrical Characteristics of TSVs C. Okoro, A. Afzal, B. Kandel, M. Walsh, and Y. S. Obeng (National Institute of Standards and Technology)
17:40   748   Innovative Gap-Fill Strategy for 28 nm Shallow Trench Isolation A. Tavernier, L. Favennec (STMicroelectronics), T. Chevolleau (LTM-CNRS/UJF), and V. Jousseaume (CEA/LETI)
18:00   749   Flexibility Evaluation and Improvement of Hybrid Inverters Based on Organic and Oxide Thin Film Transistors D. I. Kim, B. Hwang, H. Jeon (Sungkyunkwan University), K. Yu, H. Moon, B. Bae (Hoseo University), H. Lee, and N. Lee (Sungkyunkwan University)
18:20 Concluding Remarks (5 Minutes)