221st ECS Meeting - Seattle, Washington |
May 6 - May 10, 2012 |
PROGRAM INFORMATION |
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E4 - Nanoscale Luminescent Materials |
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Monday, May 7, 2012 |
Room 605, Level 6, Washington State Convention Center |
Si and Ge Based Nanostructures I |
Co-Chairs: P. Mascher and D. Lockwood |
| Time | Progr# | Title and Authors |
| 08:15 |
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Introductory Remarks (5 Minutes)
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| 08:20 |
827
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(Invited) Universal Ion Implantation System for Use in the Preparation of Doped Silicon Dielectric Films
A. P. Knights, R. M. Savidge, D. V. Stevanovic, R. N. Kleiman (McMaster University), and D. Chivers (IonLinks Int. Ltd.)
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| 09:00 |
828
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(Invited) Photon Management with Si Nanocrystals
T. Gregorkiewicz (University of Amsterdam)
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| 09:40 |
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Intermission (20 Minutes)
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Si and Ge Based Nanostructures II |
Co-Chairs: A.P. Knights and T. Gregorkiewicz |
| Time | Progr# | Title and Authors |
| 10:00 |
829
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(Invited) Growing Si Nanocrystals within a-Si Nanoclusters Embedded in a-SiO2: Evolution of Photoluminescence
L. Borrero-González, L. Nunes, F. Guimarães (Universidade de São Paulo), J. Wojcik, P. Mascher (McMaster University), A. Gennaro (Universidad Nacional del Litoral), M. Tirado, and D. Comedi (Universidad Nacional de Tucumán)
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| 10:40 |
830
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(Invited) Ultrafast Carrier Dynamics in Silicon Nanocrystal Films
L. V. Titova, T. L. Cocker, X. Wang, A. Meldrum, and F. A. Hegmann (University of Alberta)
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| 11:20 |
831
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Fast Light-Emitting Silicon-Germanium Nanostructures
D. Lockwood, X. Wu, J. Baribeau (National Research Council Canada), N. Modi, and L. Tsybeskov (New Jersey Institute of Technology)
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| 11:40 |
832
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XANES and XEOL Investigation of Cerium and Terbium Co-Doped Silicon Oxide Films
P. R. Wilson, Z. Khatami, R. Dabkowski, K. Dunn, E. Chelomentsev, J. Wojcik, and P. Mascher (McMaster University)
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Compound Semiconductor Nanostructures |
Co-Chairs: D. Comedi and Z. Mi |
| Time | Progr# | Title and Authors |
| 14:00 |
833
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(Invited) Passivation of III-V Nanowires for Optoelectronics
R. R. LaPierre, A. C. Chia, C. M. Haapamaki, and N. Tajik (McMaster University)
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| 14:40 |
834
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Emissive Semiconductor Nanocrystals: Recent Progress
A. Eychmüller, S. Panda, S. Hickey (TU Dresden), S. Miao (Hefei University of Technology), V. Lesnyak, and N. Gaponik (TU Dresden)
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| 15:00 |
835
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Two-Photon Photoluminescence from Hierarchical ZnO Nanostructures
G. Grinblat (Laboratorio de Electrónica Cuántica), M. Tirado, D. Comedi (Universidad Nacional de Tucumán), M. Capeluto, and A. Bragas (Laboratorio de Electrónica Cuántica)
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| 15:20 |
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Intermission (20 Minutes)
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| 15:40 |
836
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(Invited) Strategies for Isolating Colloidal Quantum Dot Luminescence from External Fluctuations: Mn2+ Doping of ZnSe and Alloyed Shells on CdSe
C. N. Allen, S. A. Lamarre, J. Tessier, V. Veilleux, D. Lachance-Quirion, and M. Lecavalier (Université Laval)
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| 16:20 |
837
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Photovoltaic Behavior in a Symmetrical CdSe Quantum Dot - ITO Cell
A. J. Giles and E. Stokes (The University of North Carolina at Charlotte)
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Tuesday, May 8, 2012 |
Room 605, Level 6, Washington State Convention Center |
Nanostructured Devices |
Co-Chairs: R.R. LaPierre and C. Allen |
| Time | Progr# | Title and Authors |
| 08:00 |
838
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(Invited) Si/Ge Quantum Well Light-Emitting Diode for Monolithic Integration in Si Photonics Chips
S. Saito, K. Oda, K. Tani, M. Takahashi (PETRA), E. Nomoto, T. Okumura (Hitachi), Y. Suwa (PETRA), Y. Lee (Hitachi), M. Sagawa, T. Sugawara, and T. Ido (PETRA)
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| 08:40 |
839
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(Invited) Rolled-up 1.55 µm Semiconductor Quantum Dot Tube Lasers
Z. Mi, P. Bianucci, M. Dastjerdi, S. Mukherjee, M. Djavid (McGill University), and P. Poole (National Research Council of Canada)
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| 09:20 |
840
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Hafnia-Based Luminescent Insulator for Phosphor Application
L. Khomenkova (CIMAP/ CEA/CNRS/Ensicaen/UCBN), Y. An (CIMAP/CEA/CNRS/Ensicaen/UCBN), C. Labbé, X. Portier, and F. Gourbilleau (CIMAP/ CEA/CNRS/Ensicaen/UCBN)
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| 09:40 |
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Intermission (20 Minutes)
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Novel Nanostructured Materials |
Co-Chairs: Y. Shiraki and B. Gelloz |
| Time | Progr# | Title and Authors |
| 10:00 |
841
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(Invited) Synthesis of New Fluorescent Semiconductor Nanoparticles and Their Optical Uses
S. Kuwabata, T. Uematsu (Osaka University), and T. Torimoto (Nagoya University)
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| 10:40 |
842
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(Invited) Ligand-Mediated Modifcation of the Electronic Structure of Quantum Dots
T. Van Buuren (Lawrence Livermore National Laboratory), J. Lee (LLNL), R. Meulenberg (University of Maine), H. Whitley (LLNL), L. J. Terminello (Pacific Northwest National Laboratory), D. Prendergast (LBNL), E. Schwegler (LLNL), and T. Willey (Lawrence Livermore National Laboratory)
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| 11:20 |
843
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Formation of Photo-Luminescent Patterns on Paper Using Nanocrystalline Quantum Dot Ink and Mist Deposition
A. Kshirsagar (The Pennsylvania State University), S. Pickering, J. Xu (Penn State University), and J. Ruzyllo (The Pennsylvania State University)
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| 11:40 |
844
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The Influence of Carbon on the Structure and Photoluminescence of Amorphous Silicon Carbonitride Thin Films
Z. Khatami, P. R. Wilson, K. Dunn, J. Wojcik, and P. Mascher (McMaster University)
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Nanophosphors |
Co-Chairs: A. van Buuren and S. Kuwabata |
| Time | Progr# | Title and Authors |
| 14:00 |
845
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(Invited) Blue Phosphorescence in Oxidized Nano-Porous Silicon and Related Functions
B. Gelloz (Nagoya University) and N. Koshida (Tokyo University of A & T)
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| 14:40 |
846
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(Invited) Synthesis and Optical Properties of Ultrasmall Inorganic Optical Markers Based on Lanthanides Emission for Bio-Medical Applications
A. Podhorodecki, M. Banski, A. Noculak, B. Sojka, and J. Misiewicz (Wroclaw University of Technology)
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| 15:20 |
847
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(Invited) Effects of the Nanostructure and Fabrication Process on the Photoluminescence Properties of PFO Nanopillar Arrays
L. F. Marsal (Universitat Rovira i Virgili), R. Palacios (University Rovira i Virgili), P. Formentín, A. Santos, J. Ferré--Borrull, and J. Pallarès (Universitat Rovira i Virgili)
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Ballroom 6E, Level 6, Washington State Convention Center |
Poster Session |
Co-Chairs: D. Lockwood and P. Mascher |
| Time | Progr# | Title and Authors |
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848
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Plasma-Driven Transparent Display Panel Using (Y,Gd)BO3:Eu3+ Nanophosphors Prepared by Solvothermal Reaction
S. Choi (Korea Research Institute of Chemical Technology), B. Park (LG Electronics), J. Seo, and H. Jung (Korea Research Institute of Chemical Technology)
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849
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Reliability of Nanoparticle-Coated Phosphors for White LED Application
J. Yoo, I. Cho, D. Suh, and G. Anoop (Chung-Ang University)
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850
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Thermal Effect on Electroluminescence Quenching in SiO2 with Ge and ReOX Nanoclusters
S. I. Tiagulskyi, I. P. Tyagulskiy, А. Nazarov, N. L. Rymarenko (Lashkaryov Institute Semicondconducter Physics, NASU), T. M. Nazarova (National Technical University of Ukraine), V. S. Lysenko (Lashkaryov Institute Semicondconducter Physics NASU), L. Rebohle, J. Lehmann, and W. Skorupa (Helmgolz-Zentrum Dresden Rossendorf)
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851
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Processing-Induced Modification of Photo- and Cathodoluminescence Spectra of TiO2 Nanotubes
M. Enachi (Technical University of Moldova), M. Stevens-Kalceff (University of New South Wales), I. Tiginyanu, and V. Ursaki (Academy of Sciences of Moldova)
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| o |
852
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Optical Down-Conversion in Tb3+ and Yb3+-Doped Zn-Chalcogenide Quantum Dots
S. Das and K. C. Mandal (University of South Carolina)
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| o |
853
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Optical and Luminescence Properties of Electrosynthesized ZnSe Thin Films
T. Mahalingam, V. Dhanasekaran, and G. Ravi (Alagappa University)
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Wednesday, May 9, 2012 |
Room 605, Level 6, Washington State Convention Center |
Si and Ge Based Nanostructured Devices |
Co-Chairs: A. Podhorodecki and S. Saito |
| Time | Progr# | Title and Authors |
| 10:00 |
854
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(Invited) Ballistic Electron Emission from Nanosilicon Diode and its Application to Ultra-Thin Film Deposition of Silicon and Germanium
N. Koshida, T. Ohta (Tokyo University of A & T), and B. Gelloz (Nagoya University)
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| 10:40 |
855
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(Invited) Electroluminescence in Metal-Oxide-Semiconductor Tunnel Diodes with Nanometer-Thick Silicon
M. Morita, A. Tsuchida, K. Matsumura, R. Yamada, Y. Oshikane, K. Kawai, J. Uchikoshi, and K. Arima (Osaka University)
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| 11:20 |
856
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(Invited) Electroluminescence from Micro-Cavities of Photonic Crystals, Micro-Disks and Rings Including Ge Dots Formed on SOI Substrates
Y. Shiraki, J. Xia, X. Xu, T. Tsuboi, and T. Maruizumi (Tokyo City University)
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