221st ECS Meeting - Seattle, Washington

May 6 - May 10, 2012

PROGRAM INFORMATION

 

E7 - Wide-Bandgap Semiconductor Materials and Devices 13

 

Monday, May 7, 2012

Room 614, Level 6, Washington State Convention Center

Wide bandgap Semiconductor Devices

Co-Chairs: Edward Stokes & Zetian Mi
TimeProgr#Title and Authors
08:40   907   High-Performance Wide-Bandwidth GaN Power Amplifiers K. Shenai (The University of Toledo) and S. Leong (PolyFET RF Devices)
09:00   908   Effects of Cell Distance on the Performance of GaN High-Voltage Light Emitting Diodes R. Horng (National Chung Hsing University) and Y. Kuo (National Cheng Kung University)
09:20   909   GaN Power Schottky Diodes R. P. Tompkins, J. R. Smith, S. Zhou, K. W. Kirchner, M. A. Derenge, K. A. Jones (U.S. Army Research Laboratory), G. Mulholland (Kyma Technologies), P. Suvarna, M. Tungare, and S. Shahedipour-Sandvik (SUNY - Albany)
09:40 Intermission (20 Minutes)
10:00   910   Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epilayers K. C. Mandal, P. G. Muzykov (University of South Carolina), and J. Terry (Los Alamos National Laboratory)
10:20   911   Chemical Lift-Off of Blue Light-Emitting Diodes Grown on Sapphire Substrate with an Oxide-Patterned Sacrificial Layer C. Pan, K. Shen, D. Wuu, H. Hsueh, and R. Horng (National Chung Hsing University)
 

Wide Bandgap Nanomaterials

Co-Chairs: Colm O'Dwyer & Zia Karim
TimeProgr#Title and Authors
10:40   912   Ferroelectric Nanolithography for Fabrication of Nanostructures and Nanomaterials X. Liu (University of Washington), K. Kitamura (National Institute for Materials Science), and G. Cao (University of Washington)
11:00   913   Enhanced Optical Properties of Metal Oxide Core-Shell Nanowire Arrays M. Thomas and J. Cui (University of Arkansas - Little Rock)
11:20   914   Optical and Magnetic Properties of MBE Grown GaN:Yb Nanorods J. Wu (University of Puerto Rico), H. Huhtinen (University of Turku), W. M. Jadwisienczak (Ohio University), and R. Palai (University of Puerto Rico)
11:40   915   Aluminum Coating of ZnO Nanorods for High Spectral Purity NanoLasers G. Visimberga (Tyndall National Institute), C. C. Faulkner (CRANN), M. Boese (Lawrence Berkeley National Laboratory), and C. O'Dwyer (University College Cork and Tyndall National Institute)
 

Epitaxial growth and magnetic materials

Co-Chairs: Ray-Hua Horng & Gary Hunter
TimeProgr#Title and Authors
14:00   916   Microstructure Characterization of Nonpolar ZnO and Zn1-xMgxO Epilayers Grown on (100) Gamma-LiAlO2 by Chemical Vapor Deposition T. Huang (National Sun Yat-Sen University), W. Lin, J. Wu (National Cheng Kung University), M. Chou, T. Yan, and L. Chang (National Sun Yat-Sen University)
14:20   917   Superatmospheric MOCVD Reactor Design for High Quality InGaN Growth A. G. Melton, P. Davis, M. Uddin, and E. Stokes (The University of North Carolina at Charlotte)
14:40   918   Healing of Surface States and Point Defects in Single-Crystalline β-Ga2O3 Epilayer P. Ravadgar (National Cheng Kung University) and R. Horng (National Chung Hsing University)
15:00   919   Ferromagnetic Behavior and Optical Properties in Ytterbium-doped and Ion Implanted GaN Semiconductor W. M. Jadwisienczak (Ohio University), R. Palai, J. Wu (University of Puerto Rico), H. Tanaka, J. Wang (Ohio University), and H. Huhtinen (University of Turku, Finland)
15:20   920   In situ Growth Process Monitoring by RHEED and Magnetoptic Properties of Epitaxial GaN:ErYb Thin Films K. Dasari (University of Puerto Rico), H. Huhtinen (University of Turku), W. M. Jadwisienczak (Ohio University), and R. Palai (University of Puerto Rico)
 

Tuesday, May 8, 2012

Room 614, Level 6, Washington State Convention Center

ZnO Thin Films

Co-Chairs: Zetian Mi & Colm O'Dwyer
TimeProgr#Title and Authors
08:40   921   The Use of a Remote Plasma to Tune the Optical and Electrical Properties of Atomic Layer Deposited ZnO M. Thomas and J. Cui (University of Arkansas - Little Rock)
09:00   922   Carrier Control in Polycrystalline ZnO:Ga Thin Films via Nitrogen Implantation K. S. Shtereva (University of Rousse), I. Novotny, V. Tvarozek (Slovak University of Technology), P. Sutta (West Bohemia University), A. Vincze (International Laser Centre), C. Jeynes, N. Peng (University of Surrey), M. Vojs, and S. Flickyngerova (Slovak University of Technology)
09:20   923   Dilute Magnetic Semiconductors: Electrochemical Routes and ab initio Studies of ZnO P. Dunne, M. Uhlemann, A. Gebert, and L. Schultz (IFW Dresden)
09:40 Intermission (20 Minutes)
 

IGZO Thin Film Transistors

Co-Chairs: Edward Stokes & Ray-Hua Horng
TimeProgr#Title and Authors
10:00   924   Effects of Alternating Pulse Bias Stress on Amorphous InGaZnO Thin Film Transistors S. Park, E. N. Cho, and I. Yun (Yonsei University)
10:20   925   Asymmetric Electrical Properties for Dual-Gate InGaZnO TFT Under Gate Bias and Light Illumination T. Chen, T. Chang, T. Hsieh, C. Lin (National Sun Yat-Sen University), F. Jian (National Chiao Tung University), and M. Tsai (National Sun Yat-Sen University)
10:40   926   Investigating the Degradation Behavior Under Hot Carrier Stress for InGaZnO TFT with Symmetric and Asymmetric Structure M. Tsai, T. Chang, A. Chu, T. Chen, T. Hsieh, and Y. Chen (National Sun Yat-Sen University)
11:00   927   Investigating Degradation Behavior of InGaZnO Thin-Film Transistors induced by Charge-Trapping Effect under DC and AC Gate-Bias Stress T. Hsieh, T. Chang, T. Chen, M. Tsai, Y. Chen (National Sun Yat-Sen University), and F. Jian (National Chiao Tung University)
 

Ballroom 6E, Level 6, Washington State Convention Center

Poster

Co-Chairs: Zia Karim & Gary Hunter
TimeProgr#Title and Authors
o   928   Study of the 700 nm Emitting Spectrum Using GaInP Quantum Dots in the AlGaInP-Based Light Emitting Diodes H. Oh, J. Park, H. Ryu (Korea Photonics Technology Institute), H. Lee, Y. Kim, I. Jang (AUK Incorporation), and J. Baek (Korea Photonics Technology Institute)
o   929   Cu(In,Ga)Se2 Thin Films Preparation from a Cu(In,Ga) Metallic Alloy and Se Thin Film by Atmosphere Pressure Plasma Depositon System K. Chang, P. Ho (National Chaio Tung University), K. Yang, S. Wu, and C. Liu (Industrial Technology Research Institute)
o   930   In-Situ TEM Observation of Resistive Switching Behaviors by in Nonvolatile Memory J. Chen, C. Huang, C. Hsin, Y. Huang, and W. Wu (National Chiao Tung University)
o   931   Deposition and Characterization of Low-cost Spray Pyrolyzed Cu2ZnSnS4 Thin-films for Large-area high-efficiency Heterojunction Solar Cells S. Das (University of South Carolina), C. Frye (Spring Valley HS Science), P. G. Muzykov, and K. C. Mandal (University of South Carolina)
o   932   Growth of a-plane ZnO Thin Film on (110) NdGaO3 Substrate by Pulsed Laser Deposition T. Yen, J. Tian, C. Peng, Y. Ho, Y. Wu, and L. Chang (National Chiao Tung University)
o   933   Influence of Cathodic Potential on Structural and Optical Properties of ZnO;Mg Thin Film H. Ishizaki (Tokyo University of Science Suwa) and S. Ito (Kinki University)
o   934   Suppressed Temperature-dependent Sub-threshold Leakage Current of amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors by Nitrous Oxide Plasma Treatment G. Chang (National Chiao Tung University), T. Chang, Y. Syu, J. Jhu (National Sun Yat-Sen University), Y. Tai (National Chiao Tung University), and T. Tsai (National Sun Yat-Sen University)
o   935   Band Gap Modulation in ZnO Thin Films Through Cd Doping by sol-gel Method and Its Characterizations A. Singh, J. Deshwal, D. Kumar (Kurukshetra University), P. Khanna (Cetral Electronics Engineering Research Institute), and M. Kumar (Kurukshetra University)
o   936   Effect of Individual and Bi-layer Stack Gate Dielectric on Device Performance for Amorphous Indium Gallium Zinc Oxide (a-IGZO) TFTs A. Kiani, S. Pfaendler, B. Bayer, D. Hasko, W. Milne, and A. Flewitt (University of Cambridge)
o   937   Low-voltage IGZO TFT Prepared by APPJ Using HfO2 as a Gate Dielectric K. Chang (National Chaio Tung University), S. Huang, W. Chiang (National Chiao Tung University), I. Deng (Technology and Science Institute of Northern Taiwan), C. Wu, and C. Chang (Industrial Technology Research Institute)
o   938   The Effect of Thermal Annealing on the Properties of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet K. Chang (National Chaio Tung University), S. Huang, W. Chiang (National Chiao Tung University), C. Wu, and C. Chang (Industrial Technology Research Institute)
o   939   Point Defects in Chemical-Vapor Deposited Diamond, High-Purity Semi-Insulating SiC, and Epitaxial GaN V. I. Polyakov, A. Rukovishnikov (Kotel'nikov Institute of Radio-Engineering & Electronics of RAS), B. Garin (Kotelnikov Institute of Radio-Engineering and Electronics of RAS), and B. Druz (Veeco Instruments Inc.)
o   940   The Effect of Plasma Power on the Morphology of Selenium Thin Films Prepared by Atmosphere Pressure Plasma Depositon System K. Chang, P. Ho (National Chaio Tung University), K. Yang, S. Wu, and C. Liu (Industrial Technology Research Institute)
o   941   Drain Leakage Current in Δ-channel SOI nMOSFET Operating at High Temperatures M. M. Correia and M. Bellodi (Centro Universitário da FEI)
o   942   Structural and Optoelectronic Properties of GZO/SiOx Bilayer Films by Atmosphere Pressure Plasma Jet K. Chang, P. Ho, C. Wu (National Chaio Tung University), C. Wu, and C. Chang (Industrial Technology Research Institute)
o   943   Formation of p-n Junction from n-type Nanostructures (GaN or ZnO) / p-thin Film J. Ahn and J. Kim (Korea University)
o   944   The Effect of Oxgen Species on the ZnO TFT Prepared by Atmosphere Pressure Plasma Jet K. Chang (National Chaio Tung University), S. Huang, C. Chi (National Chiao Tung University), C. Wu, and C. Chang (Industrial Technology Research Institute)
o   945   Effect of Enhanced-mobility Current Path in Transparent a IZGO TFT J. Park and D. Choi (Hanyang University)
o   946   Epitaxial Lateral Overgrowth on the Air Void Embedded SiO2 Mask for InGaN Light-Emitting Diodes S. Kim, K. Lee, A. Chang, E. You, and J. Baek (Korea Photonics Technology Institute)
o   947   The Origin of Threshold Voltage Instability in Amorphous Oxide Semiconductors Thin Film Transistor in Different Ambient Gases Y. Chen, T. Chang (National Sun Yat-Sen University), H. Li, and W. Chung (National Chiao Tung University)
o   948   The Influences of Oxygen Incorporation on the Interface Properties of a-IGZO Thin Film Transistors C. Lo and T. Hsieh (National Chiao Tung Universty)
o   949   Electrical Properties of Vertically- Aligned ZnO Nanowires Investigated by Current Sensing AFM and Kelvin Probe Force Microscopy V. Jain, G. Kushto, and A. Mäkinen (Naval Research Laboratory)
o   950   Step-Roughened N-face GaN Surface on InGaN Light-Emitting Diodes Using a Laser Decomposition Process C. Lin, S. Chen, T. Hsieh, W. Huang, T. Yu, and P. Tsai (National Chung Hsing University)
o   951   Dielectric Loss at MM Range and Deep Level Transient Spectroscopy of the Diamond Grown by DC Arc Plasma Jet Technique B. Garin (Kotelnikov Institute of Radio-Engineering and Electronics of RAS), V. Parshin (Institute of Applied Physics of RAS), V. I. Polyakov, A. Rukovishnikov (Kotel'nikov Institute of Radio-Engineering & Electronics of RAS), E. Serov (Institute of Applied Physics of RAS), C. Jia, F. Lu, and W. Tang (Beijing University of Science and Technology)