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223rd ECS Meeting

223rd ECS Meeting

Toronto, Ontario, Canada | May 12 – 16, 2013
The Sheraton Centre Toronto Hotel
123 Queen Street West Toronto, ON M5H 2M9, Canada

The 223rd ECS Meeting was the ninth time ECS held one of its biannual meeting in Toronto, and the “tradition” of meeting in this great city started in 1911. Meeting attendees had the opportunity to not only choose from over 1,500 presentations in 44 symposia; but to sample some of the city’s renowned offerings: a wide variety of restaurants, one of the largest zoos in the world, and the great public art on display in the streets. From the meeting program to the Annual Society Business Meeting to the Board of Directors meeting, participants saw evidence of the meeting’s many “green” initiatives. The meeting app continues to improve, enabling attendees to look at a meeting abstract right on their mobile devices, and also eliminating the need to use (and throw away!) so much paper.

The ECS Lecture, during the Monday plenary session, was given by Michael Mayberry of Intel Corporation to a packed audience. {As Corporate VP of the Technology and Manufacturing Group and Director of Components Research at Intel, Michael is responsible for coordinating research to enable future process options for Intel’s technology development units. As part of Intel’s California Technology Development team he was involved in EPROM, flash, and logic wafer fabrication innovation. Mayberry received his PhD in physical chemistry from the University of California, Berkeley in 1983.

After Dr. Mayberry was introduced by ECS 2nd Vice-President Paul Kohl, the speaker began his fast-moving and informative lecture. The entire talk was sprinkled with interesting quotes from Arthur C. Clark. He began by noting that technology was poised at the 22 nm node. Thus, about 7500 transistors are packed into a region of space the dimension of a dot on the letter “i”! The challenge now is to follow the progression dictated by Moore’s law in terms of the number of devices that can be packed together in any given surface area. This inevitably means building complex 3-dimensional structures. The speaker turned to a discussion of quantum well field effect transistors built from Group III-V semiconductors and new-generation devices based on silicon nanowires. Beyond the 22 nm node he noted that carrier scattering from grains and sidewalls becomes dominant. Dr. Mayberry pointed out that interconnects become the limiter in device performance. Thus current research on aspects related to new interconnect materials (e.g., carbon nanotubes, CuAu alloys) were discussed along with the cost limitations associated with the use of elements such as gold. To continue to deliver the expected gains beyond the 22 nm node, Dr. Mayberry noted that several things need to happen congruently. First, the leakage current has to be managed, which means a change in structure to multi-gate configurations; and managing tunneling currents and scattering would be another challenge.

The talk then turned futuristic, looking at possibilities of shrinking feature sizes down to 10 nm and then even to 1.5 nm. At this juncture we reach the space of chemistry where you build individual molecules. The 10 nm-5 nm roadmap would involve further advances in lithography, materials, interconnects, and more. At the end of scaling, which Dr. Mayberry predicted would occur in about 10 years, one could even envision a post-Si nanoelectronics future. The speaker alluded to a device future beyond CMOS and into the realm of spintronics, and the search for the next switch. He then addressed non-Boolean logic possibilities and underlined that fabricating a spintronic circuit would require precise metrology and new strategies for measuring logic states. He concluded by summarizing the key developments needed in areas such as metrology and characterization to further advance manufacturing processes.}


The Gordon E. Moore Award Lecture entitled, “Wide Bandgap Semiconductors for Sensing Applications,” was given by Fan Ren on Monday afternoon. {Professor Ren is a leading figure in GaN-based sensors for gas and chemical detection and for medical diagnostics.

After getting his PhD from Brooklyn Polytechnic Institute in 1991 and completing a post-doctoral training at AT&T Bell Labs, where he played a key role in heterojunction bipolar transistors and MOSFETs, Dr. Ren joined the University of Florida in 1998. He is currently a Distinguished Professor in the Department of Chemical Engineering and an ExxonMobil Gator Chemical Engineering Alumni Chair professor.

After being introduced to the audience by the ECS President Fernando Garzon, Dr. Ren began his award lecture acknowledging his collaborator and nominator, Steve Pearton. The lecture focused on the development of AlGaN/GaN junction-based transistors (HEMTs) for gas and bio-sensing applications. In general, the HEMT gate can be coated with selective agents for the gaseous and ionic solution analytes. The sensing mechanism is based on altered barrier height in the transistor device because of analyte interactions. The resultant signal may be amplified to provide for very high sensitivity. The use of semiconductor-based solid-state devices naturally lends to “fieldable” and remotely-accessible sensors. He gave examples of recent work from his group in this area for sensitive and selective detection of several families of analytes based on biomolecules (e.g., kidney injury biomarkers and endocrine disruptor biomarkers in fish); mercury; and gases such as hydrogen, CO and CO2, arsenic, methane, pesticides etc. In particular a field example based on leak detection of hydrogen in an electric car was interesting to this writer (KR). Dr. Ren pointed out that the biosensor market is poised to reach $4.4 billion by 2014 in the U.S. He also underlined the strong demand for biosensors in divergent market sectors in biodefense, environmental monitoring, food, and pharma. Sensors that are adaptable to point of-care or on-field use and have high precision, compact size, fast response, and high selectivity would be particularly relevant to such application needs.

Dr. Ren’s award talk provided a clear demonstration of how AlGaN/GaN sensors fulfilled these requirements.}

At the ECS meetings, there are many opportunities to meet fellow scientists and engineers; but there are also ways to engage with the Society’s institutional members, including at the popular technical exhibit and mixer events. Organizations are also involved with ECS through the institutional membership program that began almost 70 years ago. At the plenary session on Monday, ECS was able to thank two of these members with Leadership Circle Awards: both Permascand AB and Evonik Litarion GmbH reached the Silver Level Leadership Circle Award for 10 years of Institutional Membership with ECS.

In addition to its very active Divisions, ECS is proud to have dynamic Sections throughout the world. Like the Divisions, the Sections also have a strong awards program, and typically these awards are presented during the Section’s own meetings. In Toronto, the Europe Section changed their normal schedule and presented the Alessandro Volta Medal to Jean-Noël Chazalviel from CNRS in Paris.

The Society’s mission to advance electrochemistry and solid state science is supported by a strong publications program. The Society’s publications have been experiencing continuous growth in submissions, which demands an enormous amount of work from our editors. In Toronto, two members of the editorial team were thanked for serving the Society’s publications so well, including Andrew A. Gewirth for his work as a Technical Editor for the Society’s journals, and John Weidner for serving as Editor of ECS Transactions.

For more information on the next ECS Meeting in San Francisco, please click here.

223rd ECS Meeting Online Scheduler – Click here to begin!
The 223rd ECS Meeting Online Scheduler has been provided for your convenience; it includes times and locations for all technical sessions, committee meetings, and special events, and can be accessed from the meeting app!

The 223rd ECS Meeting App has Arrived!
Schedule presentations and events to attend, look up a speaker, access the meeting abstracts, and even tweet your commentary!

Meeting Registration

  • All participants, including authors and invited speakers of the 223rd ECS Meeting, are required to pay the appropriate registration fees.
  • Registration Fees | view here
  • Registration is now closed.
  • Registration Brochure | view here

Hotel Reservations and Travel Information

Technical Program

Meeting Highlights

  • Dr. Michael Mayberry to deliver the ECS Lecture | more info
  • Dr. Fan Ren to deliver the 2013 Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award Lecture | more info

Symposium Topics

Symposium Organizer Information

Short Courses

Technical Exhibit

Sponsor the Meeting

Career Fair

Nontechnical (formerly Companion) Registrants

  • Travel companions of Technical Registrants are invited to register for the 223rd ECS Meeting as a “Nontechnical Registrant.” The nontechnical registrant registration fee of $25 (Early-Bird) or $30 (after April 12) includes admission to non-ticketed social events; an exclusive meet-up with beverage service and light refreshments, Monday through Thursday, 0800-1000h; and a special “Welcome to Toronto” orientation presented by Tourism Toronto on Monday, May 13th at 0900h all located in the Pinnacle Room (43rd Floor, Sheraton Centre Toronto Hotel). Please note that online registration is not available for Nontechnical Registrants.

 

For more information about ECS Meetings, contact us at meetings@electrochem.org

 

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