Defects in Wide Band Gap Semiconductors

Workshop on Defects in Wide Band Gap Semiconductors
September 23, 2014
University of Maryland, College Park

Maryland Nano Center

Call for abstracts.

CALL FOR ABSTRACTS

Abstracts accepted in the following categories:

GALLIUM NITRIDE AND SILICON CARBIDE AND RELATED COMPOUNDS

  • Origin of defects in wide band-gap semiconductors
  • Extended defects in wide band-gap semiconductors
  • Defect reduction strategies
  • Atomic level control of material growth
  • Growth optimization and growth yield
  • Defect dynamics in extreme environments

WIDE BANDGAP POWER DEVICES

  • Defect-device performance-reliability correlations
  • Defect-manufacturing yield correlations
  • Role of defects in wide bandgap power electronics
  • Defect modeling and defect-device performance models
  • Defect characterization, in-situ and in real time
  • Advanced defect characterization in both ground and excited states
  • Defect modeling in ground and excited states
  • Manufacturing yield and cost reduction strategies

Instructions and submission template.

DEADLINE JULY 28

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