201st Meeting - Philadelphia, PA

May 12-17, 2002


N2 - State-Of-The-Art Program on Compound Semiconductors XXXVI


Wednesday, May 15, 2002

Conference Room 407-408, Level 4

Co-Chairs: R.F. Kopf and D.N. Buckley

1:40 Opening Remarks -
1:45632 Fabrication and Characteristics of High Speed Implant-Confined, Index-Guided, Lateral-Current Injected, 850 nm Vertical Cavity Surface Emitting Lasers - F. Ren (University of Florida)
2:15633 Lateral Oxidation Kinetics of AlxGa1-xAs Layer by Capacitance Technique - W. Chang, N. Das, B. Gollschneider, and P. Newman (Army Resarch Laboratory)
2:45634 High Power InP-based Diode Lasers for Telecom Applications - D. Garbuzov (Princeton Lightwave Inc.)
3:15635 In-Situ Photoluminescence form III-V Semiconductor Electrodes - E. Harvey, C. Heffernan, E. Morley, D.N. Buckley (University of Limerick), and C. O'Raifeartaigh (Waterford Inst of Technology)
3:35636 OMVPE Growth of Carbon Doped Bases for Advanced HBT Applications - E. Armour, S. Sun, M. Begarney, and S. Ting (Emcore Electronic Materials)
4:05637 In-situ Etching of InP-based Materials in MOVPE Reactor using PCl3 - A. Ougazzaden (Agere Systems)
4:35638 Detailed Models of III-V MOVPE in Commercial Reactors - R.A. Talalaev, A.V. Lobanova, Y.A. Shpolyanskiy, I.Y. Evstratov (Soft-Impact Ltd.), and Y.N. Makarov (STR Inc.)
4:55639 Photoelectrochemical Characteristics of Nanocrystalline CdSe Films - K.R. Murali, D.C. Trivedi, and V. Swaminathan (Central Electrochemical Research Institute)
5:15640 Influence of Substrate Temperature on the Strucutural and Photoconductive Properties of Vacuum Evaporated CdSe Thin Films - K.R. Murali (Central Electrochemical Research Institute) and K. Srinivasan (Thanthai Periyar Institute of Technology)

Thursday, May 16, 2002

Co-Chairs: P.C. Chang and S.N.G. Chu

8:00641 The Intercation Among Defects During High Temperature Annealing of High Purity SIC - D. Alvarez, V. Konovalov, and M.E. Zvanut (University of Alabama at Birmingham)
8:20642 Crystalline Oxides on Si: Compliant Substrates for III-V's Compund Semiconductors - J. Ramdani, A. Demkov, L. Hilt, D. Jordan, J. Curless, Z. Yu, R. Droopad, A. Talin, J.L. Edwards, Jr., and W.J. Ooms (Motorola Inc.)
8:50643 FIB Systems As TEM Specimen Preparation Tools for III-V Compound Semiconductor Materials - K.N. Hooghan, S. Nakahara, R. Privette, and S.-N.(G. Chu (Agere Systems)
9:20644 Characterization of Compound Semiconductors by Combined Spectroscopic Ellipsometry and Grazing X-ray Reflectance - P. Boher, C. Defranoux, J.P. Piel, and J.L. Stehle (SOPRA)
9:40 Thirty-Minute Intermission -
10:10645 Anodization of Indium Phosphide in Sulfide Electrolytes: Film Formation and Oscillatory Behavior - D.N. Buckley, E. Harvey (University of Limerick), and S.N.G. Chu (Agere Systems)
10:40646 Nitrogen-Induced Decrease of the Electron Effective Mass in GaAs1-xNx Thin Films Measured by Thermomagnetic Transport Phenomena - D.L. Young, J.F. Geisz, and T.J. Coutts (National Renewable Energy Laboratory)
11:00647 Use of Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu Multi-Layer Metals as Schottky Metals for GaAs Schottky Diodes - C.S. Lee, E.Y. Chang, and J.J. He (National Chiao Tung University)
11:20648 Properties of Spray Pyrolysed CdSexTe1-x Films - K.R. Murali (Central Electrochemical Research Institute) and T. Elango (Chettinad Polytechnic)
11:40649 Characteristics of Swab Plated CdSxSe1-x Films - K.R. Murali (Central Electrochemical Research Institute)