202nd Meeting - Salt Lake City, UT
October 20-25, 2002
PROGRAM INFORMATION
N2 - Sixth International Symposium on Thin Film Transistor Technologies VI (TFTTVI)
Electronics/Dielectric Science and Technology
Monday October 21, 2002
Grand Ballroom A Reception, Main Level, Grand America Hotel
Amorphous and Microcrystalline Silicon TFTs
Co-Chairs: Y. Kuo and D. Ast
| Time | Abs# | Title |
|---|
| 10:00 | 630 |
Large TFT-LCD Manufacturing Technology - C.-H. Hong
(LG.Philips LCD) |
| 10:30 | 631 |
A Nano-Modulated Gate Dielectric and Performance of Amorphous Silicon Thin-Film Transistors - M. Ando, M. Kawasaki, M.
Wakagi, and K.-I. Onisawa (Hitachi, Ltd.) |
| 10:45 | 632 |
Low Temperature (<150C) a-Si:H Films for Large Area Electronic Applications -
R.B.M. Cross, T. Pease, D. Oxley, F. Clough, and E. Sankara Narayanan (De Montfort University) |
| 11:00 | 633 |
a-Si:H TFT Circuit Integration on Glass and Plastic Substrates - A. Nathan, A.
Sazonov, D. Striakhilev, P. Servati, and K. Karim (University of Waterloo) |
| 11:30 | 634 |
Effect of Mechanical and Electrical Stress on the Performance of an a-Si:H TFT on Plastic Substrate -
S.H. Won, C.B. Lee, H.C. Nam, J.H. Hur, and J. Jang (Kyung Hee University) |
| 11:45 | 635 |
Thin Film Transistors of Nanocrystalline Silicon Deposited at 150ircC - I.-C. Cheng and S. Wagner (Princeton University) |
Polycrystalline Silicon TFTs (I)
Co-Chairs: Y. Nakata and A. Nathan
| Time | Abs# | Title |
|---|
| 2:00 | 636 |
A Novel Self-Aligned Ultra-Thin Elevated Channel Low Temperature CMOS Poly-Si TFT - Z.
Xiong, H. Liu (Hongkong University of Science and Technology), C. Zhu (National University of Singapore), and
J.K.O. Sin (Hongkong University of Science and Technology) |
| 2:15 | 637 |
Development of Poly-Si CMOS TFT Using Counter Doping Process - J. Yang, S. Yu, J.
Gim, M. Yang, and C. Kim (LG.Philips LCD Inc.) |
| 2:30 | 638 |
Polysilicon CMOS TFTs Inverters with a Gate Silicon Oxide Deposited using PECVD with Hexamethyldisiloxane (HMDSO) - G. Gautier, N. Coulon
(IETR), C. Viana (2LSI), S. Crand (IETR), N. Morimoto (2LSI), and O. Bonnaud (IETR) |
| 2:45 | 639 |
Location-Control of Large Grains by u-Czochralski (Grain Filter) Process and Its Application to Single- - R. Ishihara (Delft University of Technology) |
| 3:15 | |
Fifteen-Minute Intermission - |
| 3:30 | 640 |
Dynamic Characteristics of Single Grain Silicon TFTs - F.
Yan, P. Migliorato, N. Bavidge (Cambridge University), and R. Ishihara (Delft University of Technology) |
| 3:45 | 641 |
Optimization of Sequential Lateral Solidification Processes for High Performance TFT Applications - B. Turk, P. van der Wilt, R.
Sposili, A. Limanov, and J. Im (Columbia University) |
| 4:15 | 642 |
Parametric Investigation of 2-shot SLS-processed Polycrystalline Silicon TFTs - M.A. Crowder, M.
Moriguchi, Y. Mitani, and A.T. Voutasas (Sharp Laboratories of America, Inc.) |
| 4:30 | 643 |
Microscopic Beam Profile and its Relationship with the Poly-Si Film Morphology Grown Laterally by a Phase-Modulated Excimer-laser Crystallization Method - Y. Kimura, M.
Jyumonji, M. Hiramatsu, M. Nishitani, and M. Matsumura (Advanced LCD Technologies Development Center Co., Ltd.) |
Tuesday October 22, 2002
Polycrystalline Silicon TFTs (II)
Co-Chair: J. Jang
| Time | Abs# | Title |
|---|
| 8:15 | 644 |
High Performance Poly-Si TFTs on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization - A. Hara, F. Takeuchi, M. Takei, K.
Suga, K. Yoshino, M. Chida, Y. Sano, T. Kakehi, Y. Mishima, and N. Sasaki (Fujitsu Laboratories Limited) |
| 8:45 | 645 |
Device and Process Technology Requirements for Next-Generation, Ultra-High-Performance Poly-Si TFTs - A. Voutsas (Sharp Labs of America) |
| 9:15 | 646 |
Polysilicon TFT’s on Plastic Substrates - P. Smith, P. Carey, P.
Wickboldt, D. Toet, T. Sasagawa, and S. Ram (FlexICs, Inc.) |
| 9:45 | 647 |
Transfer Approach Toward Fabricating Poly-Si TFTS on Plastic Substrates - H. Li, Y. Lee, and S. Fonash (Pennsylvania State University) |
| 10:00 | |
Fifteen-Minute Intermission - |
Crystallization, Etching, Deposition, Hydrogenation, and Metallization (I)
Co-Chairs: S. Fonash and J. Jang
| Time | Abs# | Title |
|---|
| 10:15 | 648 |
Polysilicon TFTs Made by Using Different Crystallization Techniques - T.
Mohammed-Brahim, O. Bonnaud, and Y. Helen (Universite Rennes I) |
| 10:45 | 649 |
Ni Silicide Mediated Crystallization of Amorphous Silicon Thin Film on Glass at 360oC -
S.J. Park, K.H. Kim, W.S. Sohn, J.H. Choi, and J. Jang (Kyung Hee University) |
| 11:00 | 650 |
Low Temperature Polycrystalline Silicon Thin Film Transistors Fabricated by Electroless Plating Ni Induced Crystallization of Amorphous Si - C.-W.
Chao, Y.S. Wu, Y.-C. Chen, G.-R. Hu, and M.-S. Feng (National Chiao Tung University) |
| 11:15 | 651 |
The Effects of Oxygen Concentration in Ni Film on the Metal Induced Crystallization of Amorphous Silicon - Y.-D. Lin,
Y.S. Wu, C.-W. Chao, and G.-R. Hu (National Chiao Tung University) |
| 11:30 | 652 |
The Effect of The Native Oxide Layer on The Mechanism of Metal-Induced Crystallization of a-Si:H - M. Barghouti and H. Naseem (University of Arkansas) |
| 11:45 | 653 |
The Effects of Pd2Si on The Electroless Plating Pd Induced Crystallization of Amorphous Silicon Thin Films - H. Tian
Jiun, H. Guo-Ren, W. YewChung Sermon, and C. Chi-Wei (National Chiao Tung University) |
Crystallization, Etching, Deposition, Hydrogenation, and Metallization (II)
Co-Chairs: O. Bonnaud and R. Ishihara
| Time | Abs# | Title |
|---|
| 2:00 | 654 |
High Quality TEOS Silicon Oxide deposited at Low Temperature for TFT Gate Dielectric Application - N. Morimoto (University of Sao Paulo) |
| 2:30 | 655 |
Low-Temperature-Proceeded Gate Insulator for Poly-Si TFTs by Combination of Photo-Oxidation and PECVD - Y. Nakata, T. Okamoto, M.
Goto, and K. Azuma (Advanced LCD Tech. Development Center Co., Ltd.) |
| 2:45 | 656 |
Electrical Properties of Room Temperature SiO_2 Deposited by a Combination of Jet Vapor and Multipolar Electron Cyclotron Resonance Plasma - G.
Isai, A. Kovalgin, J. Holleman, P. Woerlee, and H. Wallinga (University of
Twente) |
| 3:00 | 657 |
Effects of Plasma Treatments on the Characteristics of Poly-Si Thin-Film Transistors Having Electrical Junctions Induced by a Bottom Sub-Gate - C.-M. Yu (National Chiao-Tung University), H.-C. Lin (National Nano Device Laboratories), T.-F. Lei, and T.-Y. Huang (National Chiao-Tung University) |
| 3:15 | 658 |
Schottky Barrier Poly-Si Thin-Film Transistors with Nano-scale Channel Width - H.-C. Lin (National Nano Device Laboratories), M.-H. Lee (National Chiao-Tung University), F.-J. Hou (National Nano Device Laboratories), M.-F. Wang, and T.-Y. Huang (National Chiao-Tung University) |
| 3:30 | |
Fifteen-Minute Intermission - |
| 3:45 | 659 |
Electroless Deposition of Thin Metallic Films and Alloys - T. Khoperia (Georgian Academy of Sciences) |
| 4L00 | 660 |
On Gas-Pahse Depletion During LPCVD of GeSi Films using GeH_4/SiH4 AND GeH4/Si2H6 Gas Sources - A. Kovalgin and J. Holleman (University of
Twente) |
| 4:15 | 661 |
Reactive Ion Etching and Via Opening in Low Permittivity Inter-level Dielectric Films for Pixelated TFT Arrays - R.
Jeyakumar, K. Karim, S. Sivoththaman, and A. Nathan (University of Waterloo) |
| 4:30 | 662 |
Characteristics of Schottky Barrier Poly-Si Thin-Film Transistors with Excimer Laser Annealing Treatment - K.-L.
Yeh, M.-H. Lee, H.-C. Lin, R.-W. Tsai, and T.-Y. Huang (National Chiao-Tung University) |
Grand Ballrooms B and C, Main Level, Grand America Hotel
Poster Session
Wednesday October 23, 2002
Grand Ballroom A Reception, Main Level, Grand America Hotel
Devices, Modeling, and Characterization
Co-Chair: A. Voutsas
| Time | Abs# | Title |
|---|
| 10:15 | 664 |
Simulation and Modeling of Nanocrystalline Silicon Thin Film Transistors - B.
Iniguez, D. Dosev, J. Pallares, L. Marsal (Universitat Rovira i Virgili), and T. Ytterdal (Norwegian University of Science and Technology) |
| 10:45 | 665 |
Conduction and Low-Frequency Noise:Diagnostic Tools for Low-Temperature (< 600°C) Polysilicon Thin Film Transistor Technology - L. Pichon
(ISMRA/Universite), A. Mercha (IMEC), O. Bonnaud (CNRS - UMR 6164), and R. Carin
(ISMRA/Universite) |
| 11:15 | 666 |
Electrical Characterization of TFT´s on Excimer Laser Crystallized Si Film - F. Simon, H.-J. Kahlert
(Microlas Lasersystem GmbH), R. Ishihara, P.C. van der Wilt (TU Delft), M.
Nerding, and H.-P. Strunk (Universitat Erlangen) |
| 11:30 | 667 |
Electrostatic Discharge Protection in a-Si:H TFT Circuits -
N.T. Golo (Universite of Twente), F.G. Kuper (Philips Semiconductors), T. Mouthaan
(Universite of Twente), and M. Pitt (Philips Mobile Display Systems) |
New, Novel Applications and Materials
Co-Chairs: T. Mohammed-Brahim and M. Shur
| Time | Abs# | Title |
|---|
| 2:00 | 668 |
A Highly Stress-immune and High-performance Poly-Si TFT for System-in Displays - T.
Shiba, M. Hatano, M. Ohkura, T. Itoga, and T. Miyazawa (Hitachi, Ltd.) |
| 2:30 | 669 |
Amorphous Silicon Thin-Film Transistor for Active-Matrix Field Emission Display - Y.-H. Song (Electronics and Telecommunications Research Institute) |
| 3:00 | 670 |
Polysilicon TFT Magnet Sensors - F. Le
Bihan, E. Carvou, and O. Bonnaud (Groupe de Microelectronique) |
| 3:30 | |
Fifteen-Minute Intermission - |
| 3:45 | 671 |
Growth of Pentacene Films for Thin Film Transistor Applications - G. Malliaras (Cornell
Universtity) |
| 4:15 | 672 |
Boron-doped a-Si:H Thin Film Deposition Process and Applications in p-channel Thin Film Transistor and Photodiode for He-Ne Laser Light Detection - Y.
Kuo, H. Nominanda (Texas A and M University), M. Ristova (University at Skopje),
H.H. Lee, and J.-Y. Tewg (Texas A and M University) |
| 4:30 | |
Concluding Remarks- Y. Kuo - |
|