202nd Meeting - Salt Lake City, UT

October 20-25, 2002


O1 - Diagnostic Techniques for Semiconductor Materials and Devices

Electronics/The International Society for Optical Engineering (SPIE)

Thursday October 24, 2002

Imperial Ballroom C, Main Floor, Grand America Hotel

Overview of Techniques

Co-Chairs: D.K. Schroder, T.J. Shaffner, and M. Tajima

8:30679 Semiconductor Metrology Requirements over the Next 15 Years - A. Diebold (International Sematech)
9:00680 Noise Diagnostics of Advanced Silicon Subtrates and Deep Sumicron Process Modules - E. Simoen, A. Mercha, and C. Claeys (IMEC)
9:30 Thirty-Minute Intermission -
10:00681 High Resolution X-ray Reflectometry: Theory, Practice, Accuracy and Precision - R. Matyi (National Institute of Standards and Technology)
10:30682 Watching Chips Work: Time Resolved Optical Imaging of Switching in Working ICs - J. Tsang (IBM)
11:00683 Measurement of Local Strain in Semiconductor Materials by Using Synchrotron X-Ray Microbeam - J. Matsui, Y. Tsusaka, Y. Kagoshima, and K. Yokoyama (Himeji Institute of Technology)
11:30684 Application of the Local Electrode Atom Probe to the Semiconductor Industry - T. Kelly (Imago Scientific Instruments Corporation)

Impurities, Capacitance, and Optical

Co-Chairs: D.K. Schroder, T.J. Shaffner, and M. Tajima

2:00685 Direct Observation of Substitutional and Interstitial Fe atoms in Si by High-Temerature and In-Beam Mossbauer Spectroscopy - Y. Yoshida (Shizuoka Institute of Science and Technology)
2:30686 Quantitative Evaluation of Iron at the Silicon Surface After Wet Cleaning Treatments - C. Carpanese, P. Bacciaglia, D. Caputo, M.L. Polignano (ST Microelectronics), P. Lazzeri, M. Bersani, L. Vanzetti (ITC-irst), P. Pianetta (SLAC), and L. Moro (SRI International)
2:45687 Influence of Cobalt Contamination in the Measurement of Diffusion Length of P-type CZ Silicon Wafers - N. Pic, M.L. Polignano, D. Caputo, G. Salva (STMicroelectronics), M. Sardo (Metron Technology), and A. Danel (CEA / LETI)
3:00688 Applying Microwave Photoconductive Decay Method to Copper Detection in p-type Silicon - H. Väinölä, M. Yli-Koski, A. Haarahiltunen, and M. Palokangas (Helsinki University of Technology)
3:15 Fifteen-Minute Intermission -
3:30689 Nitrogen Concentration Measurement of CZ Si - N. Inoue (Osaka Prefecture University), N. Fujiyama, and H. Yagi (JEITA)
4:00690 Extraction of the Capacitance of Ultrathin High-K Gate Dielectrics - S. Kar (Indian Institute of Technology)
4:15691 Optical Surface Analysis of Transparent Substrates for Manufacturing Applications - L. Bechtler, V. Velidandla, and G. Lane (Candela Instruments)