203rd Meeting - Paris, France
April 27-May 2, 2003
PROGRAM INFORMATION
E1 - Solid State Joint General Poster Session
All Solid State Divisions
Tuesday, April 29, 2003
Hall Maillot, Level 2, Le Palais des Congres
Technical Exhibit and Tuesday Evening Poster Session
Co-Chairs: C.L. Claeys and M.J. Deen
Time | Abs# | Title |
o | 335 |
Electronic Properties of Junctions Between Aluminum and Undoped/Doped Poly(2,5-dimethoxyaniline) - T.-C. Wen and L.-M. Huang (National Cheng Kung University) |
o | 336 |
Electrochemical Oxidation of Slurries: A Novel Chimie Douce Synthetic Method. Studies, Characterization, and Examples - D. Munoz-Rojas, J. Oro, J. Fraxedas, P. Gomez-Romero, and N. Casan-Pastor (Institut de Ciencia de Materials de Barcelona) |
o | 337 |
One Element of Leakage Current of Insulator - T. Fukuda and H. Yanazawa (ASET) |
o | 338 |
Fabrication and Device Simulation of a 0.1 um MOSFET with Abrupt Retrograde Channel Profile - G. Oleszek (University of Colorado) |
o | 339 |
Radio-Frequency Magnetron Sputtering Power Effect on the Ionic Conductivities of ZrO2 Films - J. Ju Hyun (Yonsei University), O. In Hwan (Korea Institute of Science and Technology), L. Tae Hee (Yonsei University), and Y. Young Soo (Korea Institute of Science and Technology) |
o | 340 |
Effect of Hydrogen on the Characteristics of ZnO Thin Films - Y.-A. Jeon, K.-S. No (Korea Advanced Institute of Science and Technology), and Y.-S. Yoon (Korea Institute of Science and Technology) |
o | 341 |
Thermal Decomposition of Ru(EtCp)_2 and Metallorganic Chemical Vapor Deposition of Ruthenium Thin Films Using Ru(EtCp)2 - J. Choi, J. Hong (Korea Advanced Institute of Science and Technology), J.S. Heo, S.H. Moon (Seoul National Uiversity), and K. No (Korea Advanced Institute of Science and Technology) |
o | 342 |
Fabrication of the Micro-PCR Chip and Thermal Cycling System - Y.K. Lee (Kyungwon University), Y.S. yoon (Korea Institute of Science and Technology), D.H. Lee, Y.H. Shin, S.J. Kwon, and J.S. Kim (Kyungwon University) |
o | 343 |
Etching Damage to the Electrical Properties of BLT Thin Films - I.-K. You and B.-G. Yu (Electronics and Telecommunication Research Institute) |
o | 344 |
Large Area Etching for Porous Semiconductors - J. Carstensen, J. Bahr, K. Steen, M. Christophersen, S. Langa, S. Loelkes, and H. Foell (University of Kiel) |
o | 345 |
Phase Transformation of the Cu6Sn5 Intermetallic Compound at the Sn-9Zn-xAg/Cu Interface during Solid-State Reaction - T.-C. Chang, M.-H. Hon (National Cheng Kung University), and M.-C. Wang (National Kaohsiung University of Applied Sciences) |
o | 346 |
Auto-correlation Function Analysis of Phase Formation in the Initial Stage of Interfacial Reactions of Titanium Thin Films on (001)Si - T.H. Yang (National Tsing Hua University) |
o | 347 |
Identification of Dominant Nitrogen-Oxygen Defects in Silicon using First Principles Calculations - F. Sahtout Karoui, A. Karoui, G. Rozgonyi (North Carolina State University), and N. Inoue (Osaka Prefecture University) |
o | 348 |
The Growth of Pinhole-Free Epitaxial RESi2-x Thin Films on Atomically Clean Si Substrates - W.-C. Tsai (National Tsing Hua University) |
o | 349 |
Microwave-Hydrothermal Processing of Niobium- and Tantalum-Based Electronic Ceramics - A. Dias (Universidade Federal de Minas Gerais) |
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