203rd Meeting - Paris, France

April 27-May 2, 2003


J2 - Joint Symposium: (1) State-of-the-art-Program on Compound Semiconductors XXXVIII and (2) Nitride & Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV


Tuesday, April 29, 2003

Room 353, Level 3, Le Palais des Congres

Session 1 - III-V Optoelectronics

Co-Chairs: D.M. Walker and F. Ren

13:30768 Novel Waveguide Photodetectors on InP with Integrated Light Amplification - J. Piprek (University of California)
14:00769 Improvement of Kink Characteristics of 850nm AlGaAs/GaAs Implant VCSEL Utilizing Silicon Implantation Induced Disordering - H.-C. Kuo, F.-I. Lai, T.-H. Hsueh, Y.-H. Chang, W.-C. Shu, L.-H. Lai, and S.C. Wang (National Chiao Tung University)
14:30770 Effect of Post Oxidation Annealing on VCSEL performance - N. Das and W. Chang (Army Research Laboaratory)
14:50771 Low Voltage Operation Phototransistor with InGaP/AlGaAs/GaAs Composite Emitter - S. Tan, W. Chen, M. Chu, and W. Lour (National Taiwan Ocean University)

Session 2 - III-V Devices and Processing

Co-Chairs: D.N. Buckley and R.E. Enstrom

15:10772 Observation of Current Gain Collapse in Large-Area HBT with Rectangular Emitter and Etched Base - M.-K. Tsai (National Taiwan University), S.-W. Tan, W.-S. Lour (National Taiwan-Ocean University), and Y.-J. Yang (National Taiwan University)
15:30773 Characteristics of Sulfur- and InGaP-Passivated InGaP/GaAs Heterojunction Bipolar Transistors - S. Tan, M. Chu, W. Chen, and W. Lour (National Taiwan Ocean University)
15:50774 Interconnect Copper Metallization of InGaP HBTs Using WNX as the Diffusion Barrier - C. Shang-Wen, C. Edward Yi, and L. Cheng-Shin (National Chiao Tung University)
16:10775 Solvent-Affected Chemistry at GaAs/Sulfide Solution Interface - M.V. Lebedev, T. Mayer, and W. Jaegermann (Technische Universitat Darmstadt)

Session 3 - InP Electrochemistry

Co-Chairs: P.C. Chang and K. Shiojima

16:30776 Anodic Behavior of InP: Film Growth, Porous Layer Formation and Current Oscillations - D.N. Buckley, C. O'Dwyer, E. Harvey, T. Melly, M. Serantoni, D. Sutton, and S.B. Newcomb (University of Limerick)
17:00777 Mechanism of Anodic Formation of Porous InP - C. O'Dwyer, D.N. Buckley, D. Sutton, and S.B. Newcomb (University of Limerick)
17:20778 Growth of Anodic Oxides on InP Studied by Electrochemistry and Surface Analysis Correlation Between Oxidation Method, Oxide Texture and Passivating Properties - N. Simon, N.C. Quach, and A. Etcheberry (Universite de Versailles)
17:40779 Localized Photoetching of N-InP at Open-Circuit Potential - C. Debiemme-Chouvy, A. Quennoy, and I. Gerard (Universitate de Versailles-Batiment Lavoisier)

Hall Maillot, Level 2, Le Palais des Congres

Technical Exhibit and Tuesday Evening Poster Session

Co-Chairs: F. Ren and E.B. Stokes

o780 Electrical Characterization of Dry Etch-Induced Damages of 4H-SiC Reactively Ion-Etched in SF_6/O2 Plasma - B.S. Kim, M.Y. Um, H.J. Na, H.K. Song, I.S. Jeon, D.I. Eom, and H.J. Kim (Seoul National University)
o781 Defect Level Passivation in 4H-SiC Using Hydrogen Plasma Treatment - M.Y. Um, B.S. Kim, H.J. Na, H.K. Song, I.S. Jeon, D.I. Eom, and H.J. Kim (Seoul National University)
o782 HRTEM Study of Sic Buried Layer Formed by C+ Implantation in Silicon - Y. Xing, Y. Yu, and Z. Lin (Chinese Academy of Sciences)
o783 Growth and Properties of GaN on Si Substrates by Rapid Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition - R. Jiang, P. Chen, Z. Zhao, S. Zhou, B. Shen, R. Zhang, and Y. Zheng (Nanjing University)
o784 (Photo-)electrochemistry at n-GaN Grown on Sapphire and on Si : A Comparitive Study - I.M. Huygens and K. Strubbe (Universiteit Gent)
o785 InP/InGaAlAs Distributed Bragg Reflectors Grown by Low Pressure Metal Organic Vapor Deposition - T. Juen-Yen, L. Tim-Chung, and W. Shing-Chung (National Chiao Tung University)
o786 Very Low Temperature Growth of C-axis Oriented ZnO Thin films on Si Substrates - H.W. Kim, C. Lee, and K.-S. Kim (Inha University)
o787 Fabrication and NO_2 Surface Photo Voltage Sensor Properties of Nanoporous Tin-Silica Film - B. Yuliarto, H. Zhou, T. Yamada, I. Honma (National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8568 JAPAN), and K. Asai (The University of Tokyo)

Wednesday, April 30, 2003

Room 353, Level 3, Le Palais des Congres

Session 4 - Emerging Materials

Co-Chairs: E.B. Stokes and R.E. Sah

8:00788 Man-made Quantum Structures: From Superlattices to Quantum Dots - R. Tsu (University of North Carolina at Charlotte)
8:30789 Effects of Composition and Layer Thickness on the Magnetic and Structural Characteristics of GaMnN - G. Thaler, M. Overberg, R. Frazier, C. Abernathy, S. Pearton, F. Ren (University of Florida), D. Park (Seoul National University), R. Rairigh, J. Kelly (University of Florida), J.S. Lee (Seoul National University), N. Theodoropoulou, and A. Hebard (University of Florida)
9:00790 Diamond - The Next Generation Material for High Power Electronics? - A. Aleksov (University of Ulm)
9:20791 Surface Morphology of Si1-xGex Relaxed Alloys (x = 0.2 to 0.5) - A. Abbadie and J.-M. Hartmann (CEA/LETI)
9:40 Twenty-Minute Intermission

Session 5 - III-Nitride Light Emmitting Diodes

Co-Chairs: R.C. Fitch and P.H. Shen

10:00792 Solid State Lighting Research at Sandia National Laboratories - J.A. Simmons (Sandia National Labs)
10:30793 Deep Ultraviolet Light Emitting Diodes Using AlGaN Quantum Well Active Region - A. Khan, M. Shatalov, V. Adivarahab, J.P. Zhang, A. Chitnis, G. Simin, and J. Yang (University of South Carolina)
11:00794 Dramatically Improved Current Spreading in UV LEDs via Si Delta-Doping in the N-AlGaN Cladding Layer - S.F. LeBouef, X.A. Cao, and L.B. Rowland (GE Global Research Center)
11:20795 Carrier Capture and Recombination in InGaN/GaN Light-Emitting Diodes - X.A. Cao, S.F. LeBoeuf, L.B. Rowland, J.L. Garrett, S.D. Arthur, and D.W. Merfeld (GE Research Center)

Session 6 - Wide Bandgap Materials and Electronic Devices

Co-Chairs: R.E. Enstrom and D.M. Walker

13:30796 Instabilities in GaN based FET Devices - Nature and Alternative Structures - E. Kohn (University of Ulm)
14:00797 AlGaN Power Rectifiers - S.J. Pearton, J. Kim, F. Ren, K. Baik, B.P. Gila, C.R. Abernathy (University of Florida), Y. Irokawa (Toyota Central R and D Laboratories), J.-I. Chyi (National Central University), S.S. Park, and Y.J. Park (Samsung Advanced Institute of Technology)
14:30798 Physics of Electron Injection-Induced Effects in III-Nitrides - L. Chernyak and W. Burdett (University of Central Florida)
15:00799 Activation of Al Implants in SiC - K.A. Jones, P.B. Shah, M.H. Ervin, M.A. Derenge (Army Research Lab), J.A. Freitas (Naval Research Lab), R.D. Vispute, and V. Kulkarni (University of Maryland)
15:30800 DC Characteristics of AlGaN/GaN Hterostructure Field Transistors on Free-Standing GaN Substrates - Y. Irokawa (Toyota), B. Luo, F. Ren (University of Florida), J.I. Chyi (National Central University), S.S. Park, Y.J. Park (Samsung Advanced Institute of Technology), and S.J. Pearton (University of Florida)
15:50801 Growth and Characterization of Hexagonal A1N(100) and GaN(100) on Si(111) Using Surface-Reconstruction Induced Epitaxy - K. Sundaresan, M. Jenkins, A. Faik, M.A. Hasan (University of North Carolina), and M.R. Sardela Jr. (University of Illinois)
16:10802 Innovative Substrate Solutions for GaN Applications: The Smart-CutŪ Approach - B. Faure, C. Richtarch, S. Kerdiles, S. Bressot, Y.-M. Le Vaillant (Soitec S.A.), B. Biasse, E. Jalaguier (Commissariat a l'Energie Atomique), and F. Letertre (Soitec S.A.)

Session 7 - Optical Properties of III-Nitride Materials

Co-Chairs: R.E. Sah and P.C. Chang

16:30803 Microcathodoluminescence Characterization of III-V Nitride Heterojunctions and Devices - L. Brillson (The Ohio State University)
17:00804 New Spectroscopic Data of Erbium Ions in GaN Thin Films - F. Pelle, F. Auzel (CNRS), J. Zavada (US Army Research Office), and A. Steckl (University of Cincinnati)
17:20805 Spectroscopic Ellipsometry Applied to Characterization of GaN and AlGaN Structures - P. Boher, S. Bourtault, and J.P. Piel (SOPRA)
17:40806 Infrared Photocurrent Spectroscopy of Epitaxial III-Nitride Materials on Sapphire - E.B. Stokes (University of North Carolina at Charlotte) and S.F. LeBouef (General Electric Research Lab)
18:00807 Effects of Eu Implamantation on Red Light Emission of Group III- Nitrides - S.-I. Kim, Y.T. Kim (Korea Institute of Science and Technology), A. Wakahara, and A. Yoshida (Toyohashi Univ. of Tech.)
18:20808 Morphology and Optical Properties of Porous GaN Generated Via Metal-Assisted Electroless Etching - D. Diaz, T. Williamson, and P. Bohn (University of Illinois at Urbana-Champaign)