204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
F1 - Second International Symposium on High Dielectric Constant Materials: Materials Science, Processing, Reliability, and Manufacturing Issues
Dielectric Science and Technology/Electronics
Monday, October 13, 2003
Diamond Room, Ground Level
Interface Issues
Co-Chairs: P. Chalker and R. Singh
| Time | Abs# | Title |
|---|
| 10:00 | 532 |
Tailoring High-k/Silicon Interface for Nanoelectronics Applications - J. Chang (UCLA) |
| 10:30 | 533 |
Reducing the Interfacial Formation of SiO_x in HfO2/Si MOS Structures: A Study in Pre-deposition cleaning and Surface Oxidation and Post-deposition Annealing - S. Gangopadhyay, H. Harris, K. Choi, N. Biswas, I. Chary, N. Mehta, G. Kipshidze (NanoTech Center, Texas Tech University), L. Xie, M. White (Lehigh University), and H. Temkin (NanoTech Center, Texas Tech University) |
| 11:00 | 534 |
Influence of the 5 Å TaNx Interface Layer on Dielectric Properties of the Zr-doped TaOx High-k Film - J.-Y. Tewg, J. Lu, and Y. Kuo (Texas A and M University) |
| 11:20 | 535 |
Plasma Modification of Hf High k Dielectrics: Effects of Nitridation and Silicon Nitride Deposition - W. Tsai, J. Chen, E. Young, and S. DeGendt (Intel Corporation/IMEC) |
| 11:40 | 536 |
Method for Determining the Effectiveness of Silicon Nitride as a barrier layer for HfO2 - H. Kraus, J. Snow, P. van Doorne, P. Mertens (IMEC), and F. Kovacs (SEZ) |
| 12:00 | 537 |
Effect Of Surface Preparation On High-k Gate Stack Performance - N. Moumen, J. Barnett, R. Murto, M. Gardner, B.H. Lee, G. Bersuker, and H. Huff (International SEMATECH) |
Deposition Methods and Processing I
Co-Chair: J. Chang
| Time | Abs# | Title |
|---|
| 2:00 | 538 |
Some Recent Developments In The Chemical Vapor Deposition of Electroceramic Oxides - P. Chalker and A. Jones (University of Liverpool) |
| 2:30 | 539 |
A Comparative Study of Erbium Oxide and Gadolinium Oxide High-k Dielectric Thin Films Grown by low-pressure Metalorganic Chemical Vapour Deposition (MOCVD) using b-Diketonates as Precursors - M. Singh, C. Thakur, K. Shalini (Indian Institute of Science), T. Shripathi (Inter University Consortium), N. Bhat, and S. Shivashankar (Indian Institute of Science) |
| 2:50 | 540 |
HfONx High-k Layers Deposited by MOCVD in Mixed Gas Flows of N2O and O2 - C. Zhao, S. Van Elshocht, T. Conard, Z. Xu, M. Caymax, S. DeGendt, and M. Heyns (IMEC) |
| 3:10 | 541 |
Contamination of SiO2 by Aqueous Zirconium and Hafnium Species - V. Lowalekar, V. Pandit, S. Raghavan, H. Parks (The University of Arizona), and J. Jeon (Advanced Micro Devices) |
Electrical Characterization I
Co-Chair: S. Gangopadhyay
| Time | Abs# | Title |
|---|
| 4:00 | 542 |
Internal Photoemission over High-k Insulating Barriers - V. Afanas'ev and A. Stesmans (University of Leuven) |
| 4:30 | 543 |
Leakage Current Behavior for HfO2 Thin Films - M. Jones and D. Norton (University of Florida) |
| 4:50 | 544 |
Experimental Values of a Quantization Index of the Accumulation Layers of Different High-K Gate Dielectrics - R. Singh, M. Bhagat, S. Bhatia, T. Kachru, and S. Kar (Indian Institute of Technology) |
| 5:10 | 545 |
Electrical Characteristics of High-k Stack Gate Dielectric Thin Films with La_2O3 as Buffer Layer - I. Ueda, S.-I. Ohmi, and H. Iwai (Tokyo Institute of Technology) |
| 5:30 | 546 |
Low-frequency Noise Characteristics of MISFET's with La_2O3 Gate Dielectrics - H. Sauddin, Y. Yoshihara, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology) |
Tuesday, October 14, 2003
Deposition Methods and Processing II
Co-Chair: D. Landheer
| Time | Abs# | Title |
|---|
| 8:30 | 547 |
Evaluation of High-k Dielectric Gate Oxides Made by Atomic Layer Deposition from Different Zr and Hf Precursors - M. Leskela, K. Kukli, and M. Ritala (University of Helsinki) |
| 9:00 | 548 |
Tensile Strain in Si due to Expansion of Lattice Spacings in CeO_2 Epitaxially Grown on Si (111) - Y. Nishikawa, D. Matsushita (Toshiba Corporation), N. Satou, M. Yoshiki (Toshiba Nanoanalysis Corporation), T. Schimizu, T. Yamaguchi, H. Satake, and N. Fukushima (Toshiba Corporation) |
| 9:20 | |
Forty-Minute Intermission |
| 10:00 | 549 |
Selective Wet Etching of Hf-based Layers - M. Claes, V. Paraschiv, H. Boutkabout, S. De Gendt, O. Richard, R. Lindsay, W. Boullart, and M. Heyns (IMEC vzw) |
| 10:20 | 550 |
Alternating Pulse Deposition of High-k Metal Oxide Thin Films using Hf(NO_3)4 as a Metal and an Oxygen Source with Multiple in-situ Annealing - J.F. Conley, Jr., Y. Ono, D. Tweet, G. Stecker (Sharp Labs of America), R. Solanki (Oregon Graduate Institute School of Science and Engineering), and W.W. Zhuang (Sharp Labs of America) |
| 10:40 | 551 |
Improvement of Electrical Prpperties of Alumina Films by Nitrogen Added Plasma Enhanced Atomic Layer Deposition - J.W. Lim, S.J. Yun, and J.H. Lee (Electronics and Telecommunications Research Institute (ETRI)) |
Diamond room, Ground Level
Metal Gates
Co-Chair: V. Afanas'ev
| Time | Abs# | Title |
|---|
| 11:00 | 552 |
Characterization of Resistivity and Work Function of Sputtered-TaN Film for Gate Electrode Applications - C. Kang, H. Cho, Y. KIm, R. Choi, A. Sharhriar, C. Kang, C. Choi, S. Rhee, and J. Lee (The University of Texas at Austin) |
| 11:20 | 553 |
NbO as a Gate Electrode for NMOSFETs - W. Gao, J. Conley, and Y. Ono (Sharp Labs of America) |
| 11:40 | 554 |
Novel Iridium Precursor for MOCVD - N. Oshima (TOSOH Corporation), K. Kawano, M. Takamori, T. Yamakawa (Sagami Chemical Research Center), S. Watari, H. Fujisawa, and M. Shimizu (Himeji Institute of Technology) |
| 12:00 | 555 |
Advanced Ruthenium Precursors for Thin Film Deposition - D. Thompson, G. Piotrowski, J. Peck, M. Litwin, and C. Hoover (Praxair Electronics) |
Diamond Room, Ground Level
Silicates and Effects of Post-Deposition Treatments
Co-Chair: Stefan De Gendt
| Time | Abs# | Title |
|---|
| 2:00 | 556 |
Physical and Electrical Stability of HfSiON Dielectrics - J.J. Chambers, M. Quevedo-Lopez, M.R. Visokay, H. Bu, A. Shanware, and L. Colombo (Texas Instruments Inc.) |
| 2:30 | 557 |
Densification and Crystallization Phenomena in Hf-silicates Deposited by MOCVD - B. Crivelli, M. Alessandri, S. Alberici, M. Climent, A.C. Elbaz, G. Pavia (STMicroelectronics), C. Wiemer (Laboratorio MDM-INFM), G. Cautiero, and L. Date (Applied Materials) |
| 2:50 | 558 |
Effects of NH3 Annealing on High-k HfSiON/HfO2 Gate Stack Dielectrics - H.-J. Cho, C.Y. Kang, C.S. Kang, Y.H. Kim, R. Choi, A. Shahriar, C.H. Choi, S.J. Rhee, and J. Lee (The University of Texas at Austin) |
| 3:10 | 559 |
Nitridation of HfSiO Thin Films Deposited by Atomic Layer Deposition - Y. Senzaki, H. Chatham, R. Higuchi, C. Bercaw, and J. DeDontney (ASML Thermal Division) |
Thermal Stability and Compatibility with CMOS Processing
Co-Chair: H. Iwai
| Time | Abs# | Title |
|---|
| 4:00 | 560 |
Scaling of Hf-based Gate Dielectrics – Integration with Polysilicon Gates - S. De Gendt, M. Caymax (IMEC), J. Chen (ISMT assignee at IMEC), M. Claes, T. Conard, A. Delabie, W. Deweerd (IMEC), V. Kaushik, A. Kerber (ISMT assignee at IMEC), S. Kubicek (IMEC), M. Niwa (Matsushita assignee at IMEC), L. Pantisano, R. Puurunen, L.-A. Ragnarsson, T. Schram (IMEC), Y. Shimamoto (Hitachi assignee at IMEC), W. Tsai (ISMT assignee at IMEC), E. Rohr, S. Van Elshocht, T. Witters (IMEC), E. Young (ISMT assignee at IMEC), C. Zhao, and M. Heyns (IMEC) |
| 4:30 | 561 |
Crystallization of HfO_2 Synthesized by Atomic Layer Deposition: Electrical and Microstructural Behavior - H. Kim, P. McIntyre, and K. Saraswat (Stanford University) |
| 4:50 | 562 |
Structure and Stability of Alternative High-K Gate Dielectrics - S. Stemmer, Y. Yang (University of California Santa Barbara), B. Foran, P. Lysaght (Sematech), W. Zhu, and T.-P. Ma (Yale University) |
| 5:10 | 563 |
Suppression of Silicidation in Poly-Si /High-k Insulator /SiO_2 /Si Structure by Helium Through Process - K. Muraoka (Toshiba Corporation) |
| 5:30 | 564 |
Effect of Post Metallization Annealing for La2O3 Gate Thin Films on Electrical Characteristics - A. Kuriyama, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology) |
Exhibit Hall, Ground Level
Technical Exhibit and Poster Session, 7:00 - 9:00 PM
Co-Chair: S. Kar
| Time | Abs# | Title |
|---|
| o | 565 |
Structural and Electrical Properties of Lanthanum Aluminate Thin Film Depostied by MOCVD - J.H. Jun and D.J. Choi (Yonsei University) |
| o | 566 |
Reaction Mechanism of a Titanium Source, Ti(MPD)(METHD)2, in Metalorganic Chemical Vapor Deposition of (Ba,Sr)TiO3 Films - T. Nishimura, T. Nakamura, and K. Tachibana (Kyoto University) |
| o | 567 |
Characteristics of (Pb, Sr)TiO3 Films Post Treated by Low Temperature Technologies - J.-L. Wang, C.-K. Jan, D.-C. Shye, and H.-C. Cheng (National Chiao-Tung University) |
| o | 568 |
The Improved Thermal Stability of HfO2 and (HfO2)x(Al2O3)1-x Films by Reactive Sputtering. - Y.-S. Kim, D. Lee, Y.-E. Hong, D.-H. Ko (Yonsei University), J.-H. Ku (Samsung Electronics Co., Ltd.), and C.-W. Yang (Sungkyunkwan University) |
| o | 569 |
Chlorine Detection and Quantification in ALCVD HfO2 High-k Dielectric Films Using Total Reflection X-Ray Fluorescence Spectrometry - D. Hellin, A. Delabie, R. Puurrunen, T. Conard, S. De Gendt (IMEC), and C. Vinckier (KuLeuven) |
| o | 570 |
Organic/Plastic High-Dielectric-Constant Materials - C. Huang (The Pennsylvania State University) |
| o | 571 |
Investigation of High-k Dielectric Properties with the Non-contact SASS Technique - M. Wilson, J. Lagowski, J. D'Amico, and A. Savtchouk (Semiconductor Diagnostics, Inc.) |
Wednesday, October 15, 2003
Diamond Room, Ground Level
Defects Characterization and Reliability
Co-Chair: D. Misra
| Time | Abs# | Title |
|---|
| 10:00 | 572 |
Photoelectron Spectroscopy Investigation of High k Dielectrics - R. Opila (University of Delaware) |
| 10:30 | 573 |
Soft Breakdown Phenomena in High-k Gate Dielectrics - H. Satake (Toshiba Corporation) |
| 11:00 | 574 |
Low Frequency Noise Study of n-MOSFETs with HfO2 Gate Dielectric - C. Claeys, E. Simoen, A. Mercha, L. Pantisano (IMEC), and E. Young (International Sematech, Philips Semiconductor) |
| 11:20 | 575 |
Simulations of Bias Temperature Instabilities in pMOSFETs with HfxSiOy-Based Gate Dielectrics - C. Bizzari, M. Houssa, and J.-L. Autran (University of Provence) |
| 11:40 | 576 |
The Effects of Forming Gas Anneal Temperature and Dielectrics Leakage Current on TDDB Properties of HfO2 Devices - Y.-H. Kim (University of Texas at Austin) |
| 12:00 | 577 |
Charge Trapping and Mobility Degradation in MOCVD Hafnium Silicate Gate Dielectric Stack Structures - C. Young (International SEMATECH), A. Kerber (IMEC), T.H. Hou (TSMC), E. Cartier (IBM Research Division), G. Brown, G. Bersuker (International SEMATECH), Y. Kim (Intel), C. Lim (Infineon), J. Gutt, P. Lysaght, J. Bennett, C.-H. Lee, S. Gopalan, M. Gardner, P. Zeitzoff (International SEMATECH), G. Groeseneken (IMEC), R. Murto, and H. Huff (International SEMATECH) |
Electrical Characterization II
Co-Chair: M. Houssa
| Time | Abs# | Title |
|---|
| 2:00 | 578 |
High Hole Mobility of Al2O3 MOSFETs on Dislocation Free Ge-on-Insulator Wafers - A. Chin, D.S. Yu, C.H. Huang (National Chiao Tung Univ.), C.H. Wu (Chung Hua Univ.), and W.J. Chen (National Huwei Inst. ofTechnology) |
| 2:30 | 579 |
Extraction of the High-K Gate Dielectric Parameters from the Capacitance Data - S. Kar (Indian Institute of Technology) |
| 2:50 | 580 |
Characteristics of Thermally Evaporated HfO_2 - R. Garg, D. Misra, and R. Jarwal (New Jersey Institute of Technology) |
| 3:10 | |
Twenty-Minute Intermission |
| 3:30 | 581 |
Characterization of High-k Dielectric Stacks - M. Mansouri, S. Gaddipati, and Y.L. Chiou (University of South Florida) |
| 3:50 | 582 |
Electrical Characteristics of High-k La_2O3 Thin Film Deposited by E-Beam Evaporation Method - Y. Kim, S.-I. Ohmi, K. Tsutsui, and H. Iwai (Tokyo Institute of Technology) |
| 4:10 | 583 |
Non-contact Corona-based Nitrogen Content Indicator for Si-O-N Dielectrics - J. D'Amico, J. Lagowski, M. Wilson, and A. Savtchouk (Semiconductor Diagnostics, Inc.) |
Thursday, October 16, 2003
Ferroelectric Layers and Memory Devices
Co-Chairs: R. Opila and J. Morais
| Time | Abs# | Title |
|---|
| 8:30 | 584 |
Effect of Glass Addition on Microstructure and Microwave Properties of Ba(Mg_1/3Ta2/3)O3 - T.-W. Huang (National Cheng Kung University), Y.-H. Chang (Department of Material Science and Engineering, National Cheng Kung University), and G.-J. Chen (I-Shou University) |
| 8:50 | 585 |
Dielectric Properties of La-substituted Ba_1-xLax (Fe1/2Nb1/2)1-x/4O3$ Ceramics - C.Y. Chung, Y.H. Chang, and Y.S. Chang (National Cheng Kung University) |
| 9:10 | 586 |
Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Thin Films Deposited by RF Magnetron Sputtering - S. Stemmer and J. Lu (University of California Santa Barbara) |
| 9:30 | |
Thirty-Minute Intermission |
| 10:00 | 587 |
Floating Gate Flash Memory Devices Using HfAlOx As Inter-Poly Oxide - M. Mansouri and Y.L. Chiou (University of South Florida) |
| 10:20 | 588 |
Development of a Novel MIM Capacitor Using Al_2O3/Ta205 Stack Dielectric for 90nm Embedded Dram Applications - N. Jourdan (STMicroelectronics), E. Gerritsen (Philips Semiconductors), M. Piazza, D. Fraboulet, F. Monsieur (STMicroelectronics), and K.-Y. Oh (Jusung Engineering) |
| 10:40 | 589 |
Fabrication and Characterization of Integrated PLZT Capacitors Formed via Robocasting - D. Williams, B. Tuttle, J. Cesarano, and P. Clem (Sandia National Laboratories) |
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