204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
H1 - Interfaces in Electronic Materials
Dielectric Science and Technology/Electronics/High Temperature Materials/Electronics Division of The American Ceramic Society
Monday, October 13, 2003
Captain Room, Lobby Level
Planar Interfaces I
Co-Chairs: K. Jain and T. Hara
Time | Abs# | Title |
10:00 | 632 |
Interface Characterization in the Semiconductor Industry - A.C. Diebold, P. Hung, B. Foran (International SEMATECH), and T. Kelly (Imago) |
10:30 | 633 |
Tetragonal Plus Displacive Ferroelectric Distortion in Thin SrTiO3 Films Grown on Si(001) - J. Woicik (National Institute of Standards and Technology) |
11:00 | 634 |
Electrical, Structural, and Chemical Etch Studies of Strained Si/SiGe Epitaxial Heterostructures - K.R. Bray, W. Zhao, L. Kordas (North Carolina State University), M. Robinson (Lawrence Semiconductor Research Compnay), G. Rozgonyi (North Carolina State University), and R. Wise (Texas Instruments) |
11:15 | 635 |
Thermodynamic Analysis - A.V. Davydov, W.J. Boettinger, L.A. Bendersky, D. Josell, A.J. Shapiro, and M.D. Vaudin (NIST) |
11:45 | 636 |
Investigation of Interface Between Co-enhanced Low Temperature Epitaxial Si and the Si Substrates - Y. Uchida, M. Inagaki, S. Akisawa, and K. Ishida (Teikyo University of Science and Technology) |
Planar Interfaces II
Co-Chairs: P.Y. Hung and N. Browning
Time | Abs# | Title |
2:00 | 637 |
Molecular Dynamics Simulations of the Interface Between Amorphous and Crystalline Solids - S. Garofalini (Rutgers University) |
2:30 | 638 |
Structure-Property Relationships of Interfaces in Epitaxial SnO2 Thin Films - X. Pan, J. Dominguez, W. Kim, and H. Sun (University of Michigan) |
3:00 | 639 |
Metal-Oxide Interfaces in 2nd Generation HTS Wires: Mechanism of Epitaxial Growth of Oxide Films Mediated by a Sulfur Superstructure - C. Cantoni, D.K. Christen, A. Goyal, L. Heatherly, F.A. List, E.D. Specht, M. Varela, and S.J. Pennycook (Oak Ridge National Laboratory) |
3:30 | 640 |
Effect of the Surface and Interface on the Superconducting Properties of REBa2Cu3O7 Films - Q. Jia, S. Foltyn, J. MacManus-Driscoll, H. Wang, and P. Arendt (Los Alamos National Lab) |
Tuesday, October 14, 2003
Processing
Co-Chairs: S. Garofalini and H. Gu
Time | Abs# | Title |
8:30 | 641 |
Application of an In-line, Non-destructive, Electrical Metrology in the Evaluation of Pre-gate Clean - P.Y. Hung (International SEMATECH), L. Tan (Solid State Measurement, Inc), J. Barnett (International SEMATECH), R.J. Hillard (Solid State Measurement, Inc), and A. Diebold (International SEMATECH) |
8:45 | 642 |
Interface Modification for Organic Thin Film Transistors Using a Statistical Optimization Method - W.-S. Hong (Sejong University), B. Koo, and I. Kang (Samsung Advanced Institute of Technology) |
9:00 | 643 |
Interface Passivation By Hydrogen and Deuterium Implantation - T. Kundu and D. Misra (New Jersey Institute Of Technology) |
9:30 | |
Thirty-Minute Intermission |
10:00 | 644 |
Electrochemical Fabrication of Large-area Au/TiO_2 Junctions for Photovoltaic Application - J. Tang, G. Stucky, and E. McFarland (University of California) |
10:15 | 645 |
Microstructure of Interfaces Made by Epitaxial Electrodeposition - F. Oba (Case Western Reserve University), R. Liu, E.W. Bohannan (University of Missouri-Rolla), F. Ernst (Case Western Reserve University), and J.A. Switzer (University of Missouri-Rolla) |
10:45 | 646 |
TEM Studies of Interfacial Microstructures in YBa_2Cu3Oy Coated Conductors - T. Holesinger, B. Gibbons, S. Foltyn, P. Arendt, V. Matias, Q. Jia (Los Alamos National Laboratory), R. Feenstra, A. Gapud, E. Specht (Oak Ridge National Laboratory), D. Verebelyi, W. Zhang, X. Li, and M. Rupich (American Superconductor Corporation) |
11:15 | 647 |
Thermochemically Driven Reactions at Metal/Ceramic and Ceramic/Ceramic Interfaces in Multilayered Electronics Materials - L.P. Cook, W. Wong-Ng, I. Levin, P.K. Schenck, M.D. Vaudin, and J. Suh (NIST) |
Advances in Characterization
Co-Chairs: J. Tang and R. DeSouza
Time | Abs# | Title |
2:00 | 648 |
Mapping The Electronic Structure at Interfaces with Atomic Spatial Resolution - N. Browning, I. Arslan (University of California at Davis), J. Buban (University of Illinois at Chicago), R. Erni, J.-C. Idrobo, H. Iddir, Y. Jing (University of California at Davis), Y. Lei, and S. Ogut (University of Illinois at Chicago) |
2:30 | 649 |
XANES/ELNES: A Powerful Tool For Interface Characterization of Electronic Materials - W.-Y. Ching (University of Missouri-Kansas City) |
3:00 | 650 |
Local Magnetism at Interfaces in La-Ca-Mn-O CMR Thin Films - D. Miller, V. Vlasko-Vlasov, and U. Welp (Argonne National Laboratory) |
3:30 | 651 |
Energetic of Interfaces in Refractory Oxides: Development of Calorimetric Techniques - S. Ushakov, A. Navrotsky (University of California at Davis), and A. Demkov (Motorola, Inc.) |
4:00 | 652 |
Characterization of Embedded Interfaces in Electronic Materials with Local Electrode Atom Probes - T. Kelly (Imago Scientific Instruments Corporation) |
4:30 | 653 |
Characterization of the Silicon Dioxide-Silicon Interface with the Scanning Capacitance Microscope - J. Kopanski, R. Thurber (National Institute of Standards and Technology), and M. Chun (Brown University) |
5:00 | 654 |
Dopant Profiling of Metal-Oxide Semiconductor (MOS) Structures with Scanning Electron Microscopy - W.-C. Hsiao, C.-P. Liu (National Cheng Kung University), L.-C. Sun, and T. Hung (Taiwan Semiconductor Manufacturing Company) |
Wednesday, October 15, 2003
Grain Boundaries, Twins and Domains
Co-Chairs: W.Y. Ching and J. Woicik
Grain Boundaries, Twins and Domains II
Co-Chairs: T. Kundu and T. Holesinger
Time | Abs# | Title |
2:00 | 659 |
Local Structure and Composition of Amorphous Grain Boundary Films in Electronic Ceramics - H. Gu (Chinese Academy of Sciences) |
2:30 | 660 |
Switching Behavior and Phase Transitions in KNbO3/KTaO3 Superlattices by Atomic-Level Simulation - M. Sepliarsky, S. Phillpot, D. Wolf (Argonne National Laboratory), M. Stachiotti, and R. Migoni (Instituto de Fisica Rosario) |
3:00 | 661 |
Twin Boundaries, Their Microstructure and Correlation to Critical Current Densities in Superconducting YBa2Cu3O7-x (YBCO) - S.-W. Chan (Columbia University) |
3:30 | 662 |
18O Tracer Diffusion in Donor-Doped SrTiO3 – Key to an Advanced Understanding of the Formation of a Grain Boundary Potential Barrier - R. Meyer (RWTH Aachen), J. Helmbold, G. Borchardt (TU Clausthal), and R. Waser (RWTH Aachen) |
4:00 | 663 |
Role of Bonding and Coordination in the Atomic and Electronic Structure of Diamond and Silicon Grain Boundaries and in Carbon Nanotube Junctions - P. Keblinski (Rensselaer Polytechnic Institute) |
4:30 | 664 |
TEM Studies of Interfaces in III-V Compounds - C.B. Carter (University of Minnesota) |
5:00 | 665 |
Effects of Insoluble Particles on the Crystalline Structure of Polycrystalline Sheet Silicon - R. Zhang, G. Rozgonyi (North Carolina State University), J. Rand, and R. Jonczyk (AstroPower, Inc.) |
5:15 | 666 |
Porosity of Titania Films on Alumina - K. Jain (Delphi Research Labs) |
Thursday, October 16, 2003
Interfaces in Service
Co-Chairs: S. Ushakov and D. Miller
Time | Abs# | Title |
8:30 | 667 |
Adhesion and Reliability of Thin-Film Structures for Device Technologies: New Material and Length Scale Challenges - R. Dauskardt (Stanford University) |
9:00 | 668 |
Fundamental Understanding of Failure Mechanism of Ni-BaTiO3 BME MLCCs Using Impedance Spectroscopy and Electron Microscopy - E. Furman, G.-Y. Yang, B. Dickey, and C. Randall (The Pennsylvania State University) |
9:30 | |
Thirty-Minute Intermission |
10:00 | 669 |
Glass/Metal Interfaces under High Field Exposure - L. Klein (Rutgers, the State University of New Jersey), M. Alvarez (Denglas), and E.K. Akdogan (Rutgers, the State University of New Jersey) |
10:30 | 670 |
Adhesion of Titania Films on Alumina - K. Jain (Delphi Research Labs) |
10:45 | 671 |
Dielectric Degradation of Ba_0.5Sr0.5TiO3 Thin Film Capacitor under Dry or Wet Condition - T. Hara, H. Nishikawa, S. Konushi, F. Fukumaru, and S. Nambu (Kyocera Corporation) |
11:00 | 672 |
Si-SiO_2 Interface Behavior in n-MOSFETs with Reverse Bias Voltage During High-field and Hot Electron Injection - P. Srinivasan, M. Durgamadha, and B. Vootukuru (New Jersey Institute of Technology) |
11:15 | 673 |
Thermal Stability of Low Resistance Ohmic Contacts Between Ti and Se Passivated n-type Si-(001) - D. Udeshi, S. Agarwal, M. Tao, N. Basit, E. Maldonado, W. Kirk (University of Texas at Arlington), and Y. Xu (Texas Instruments) |
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