204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
K1 - State-of-the-Art Program on Compound Semiconductors XXXIX
Electronics
Monday, October 13, 2003
Cloister South, Lobby Level
Co-Chairs: F. Ren and D.N. Buckley
| Time | Abs# | Title |
|---|
| 10:00 | 738 |
High-Rate ICP Etching of InP - R. Shul, S. Jones (Sandia National Laboratories), K. Ip (University of Florida), L. Rawlings (Sandia National Laboratories), and S. Pearton (University of Florida) |
| 10:30 | 739 |
Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals - H. Ng, A. Chowdhury, W. Parz, and N. Weimann (Bell Laboratories, Lucent Technologies) |
| 11:00 | 740 |
Growth and Characterization of GaN Quantum Dots on Silicon(111) Substrate - L. Chou, Y. Chueh, S. Chiou, and S. Gwo (National Tsing Hua University) |
| 11:15 | 741 |
Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices - C.-P. Liu, R. Chen, and Y.-L. Lai (National Cheng Kung University) |
| 11:30 | 742 |
Long-wavelength Emission of GaInNAs Qunatum Dots Grown on GaAs(001) - C.W. Tu, A. Nishikawa, and Y.G. Hong (University of California, San Diego) |
Co-Chairs: H.M. Ng and A.G. Baca
| Time | Abs# | Title |
|---|
| 2:00 | 743 |
Development of 850nm VCSELs for OC-192 Applications - H.-C. Kuo, Y.-H. Chang, T.-H. Hseuh, F. Lai, and S.-C. Wang (Institute of Electro-optical Eng.) |
| 2:30 | 744 |
Development of InGaAsN-based 1300 nm VCSELs - Y.-L. Chang, T. Takeuchi (Agilent Laboratories), M. Leary (Agilent Technologies), D. Mars, A. Tandon, R. Twist, S. Belov, D. Bour, M. Tan (Agilent Laboratories), D. Roh, Y.-K. Song, L. Mantese, and A. Luan (Agilent Technologies) |
| 3:00 | 745 |
Influence of a Low Composition InxGa1-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGa1-xN Based LEDs - J. Ramer, D. Florescu, D. Lee, and E. Armour (EMCORE Corporation) |
| 3:30 | |
Fifteen-Minute Intermission |
| 3:45 | 746 |
Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment - N. Moser, R. Fitch, D. Via, A. Crespo, M. Yannuzzi, G. Jessen, J. Gillespie (Air Force Research Laboratory), B. Luo, F. Ren, C. Abernathy, S. Pearton, and B. Gila (University of Florida) |
| 4:15 | 747 |
Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures - Y.W. Kwon and D. Norton (University of Florida) |
| 4:30 | 748 |
Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) - M. Mathe, S. Cox, U. Happek, and J. Stickney (University of Georgia) |
| 4:45 | 749 |
Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module - N.-K. Kim (Chung-Ang University), K.-S. Kim (Yeojoo Institute of Technology), N.-H. Kim, and E.-G. Chang (Chung-Ang University) |
Tuesday, October 14, 2003
Co-Chairs: R.F. Kopf and F. Ren
| Time | Abs# | Title |
|---|
| 8:30 | 750 |
Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water - S. Khan and S. Smith (Duquesne University) |
| 8:45 | 751 |
Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Area - M. Strada (STMicroelectronics) |
| 9:00 | 752 |
Growth and Characterization of High-Ge Content SiGe Virtual Substrates - M. Erdtmann, M. Carroll, J. Carlin, T. Langdo, R. Westhoff, C. Leitz, V. Yang, M. Currie, T. Lochtefeld, K. Petrocelli, C. Vineis, H. Badawi, and M. Bulsara (AmberWave Systems Corp.) |
| 9:30 | |
Thirty-Minute Intermission |
| 10:00 | 753 |
Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water - W. Ingler Jr. and S. Khan (Duquesne University) |
| 10:15 | 754 |
Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution - G. D'Arrigo, C. Bongiorno, and V. Raineri (Consiglio Nazionale delle Ricerche CNR-IMM) |
| 10:30 | 755 |
Surface Pitting and Porous Layer Growth on n-InP Anodes in KOH - C. O'Dwyer, M. Serantoni, and D.N. Buckley (University of Limerick) |
| 10:45 | 756 |
UHV-EC Studies of Cleaning Procedures for III-V Compound Semiconductor Substrates to be Used as Substrates for Electrodeposition - M. Muthuvel, L. Ward, and J. Stickney (University of Georgia) |
| 11:00 | 757 |
Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques - P. Feichtinger, K. Bowen (Bede Scientific Inc), B. Poust, M. Goorsky (UCLA), M. Wojtowicz, and R. Sandhu (Northrop Grumman Space Technology) |
| 11:15 | 758 |
Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure - Y.-L. Lai, R. Chen, C.-P. Liu, and Y.-W. Lin (National Cheng Kung University) |
| 11:30 | 759 |
The By-products and Etching Species from Plasma Etching of InP using HBr - E. Sabin and R. Elmadjian (Northrup Grumman) |
|