204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003


K1 - State-of-the-Art Program on Compound Semiconductors XXXIX


Monday, October 13, 2003

Cloister South, Lobby Level

Co-Chairs: F. Ren and D.N. Buckley

10:00738 High-Rate ICP Etching of InP - R. Shul, S. Jones (Sandia National Laboratories), K. Ip (University of Florida), L. Rawlings (Sandia National Laboratories), and S. Pearton (University of Florida)
10:30739 Polarity-Selective Chemical Etching of GaN: From Nanotip Pyramids to Photonic Crystals - H. Ng, A. Chowdhury, W. Parz, and N. Weimann (Bell Laboratories, Lucent Technologies)
11:00740 Growth and Characterization of GaN Quantum Dots on Silicon(111) Substrate - L. Chou, Y. Chueh, S. Chiou, and S. Gwo (National Tsing Hua University)
11:15741 Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices - C.-P. Liu, R. Chen, and Y.-L. Lai (National Cheng Kung University)
11:30742 Long-wavelength Emission of GaInNAs Qunatum Dots Grown on GaAs(001) - C.W. Tu, A. Nishikawa, and Y.G. Hong (University of California, San Diego)

Co-Chairs: H.M. Ng and A.G. Baca

2:00743 Development of 850nm VCSELs for OC-192 Applications - H.-C. Kuo, Y.-H. Chang, T.-H. Hseuh, F. Lai, and S.-C. Wang (Institute of Electro-optical Eng.)
2:30744 Development of InGaAsN-based 1300 nm VCSELs - Y.-L. Chang, T. Takeuchi (Agilent Laboratories), M. Leary (Agilent Technologies), D. Mars, A. Tandon, R. Twist, S. Belov, D. Bour, M. Tan (Agilent Laboratories), D. Roh, Y.-K. Song, L. Mantese, and A. Luan (Agilent Technologies)
3:00745 Influence of a Low Composition InxGa1-xN/GaN Superlattice on the Optical Properties of Blue and Green InxGa1-xN Based LEDs - J. Ramer, D. Florescu, D. Lee, and E. Armour (EMCORE Corporation)
3:30 Fifteen-Minute Intermission
3:45746 Dramatic Improvements in AlGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment - N. Moser, R. Fitch, D. Via, A. Crespo, M. Yannuzzi, G. Jessen, J. Gillespie (Air Force Research Laboratory), B. Luo, F. Ren, C. Abernathy, S. Pearton, and B. Gila (University of Florida)
4:15747 Electric Field Modulation of ZnO Film Conductance in ZnO-Based FET Structures - Y.W. Kwon and D. Norton (University of Florida)
4:30748 Growth of Polycrystalline HgSe by Electrochemical Atomic-layer Epitaxy (EC-ALE) - M. Mathe, S. Cox, U. Happek, and J. Stickney (University of Georgia)
4:45749 Effect of the Intermetallic Compounds on the Joint Strength of the Optical Module - N.-K. Kim (Chung-Ang University), K.-S. Kim (Yeojoo Institute of Technology), N.-H. Kim, and E.-G. Chang (Chung-Ang University)

Tuesday, October 14, 2003

Co-Chairs: R.F. Kopf and F. Ren

8:30750 Fabrication of nTiO2Thin Films by SPD Method for Efficient Photosplitting of Water - S. Khan and S. Smith (Duquesne University)
8:45751 Resource Conservation and Fab Cost Saving Through DIW and Chemical Consumption Reduction in Pre-diffusion Cleaning Area - M. Strada (STMicroelectronics)
9:00752 Growth and Characterization of High-Ge Content SiGe Virtual Substrates - M. Erdtmann, M. Carroll, J. Carlin, T. Langdo, R. Westhoff, C. Leitz, V. Yang, M. Currie, T. Lochtefeld, K. Petrocelli, C. Vineis, H. Badawi, and M. Bulsara (AmberWave Systems Corp.)
9:30 Thirty-Minute Intermission
10:00753 Spray Pyrolytically Deposited Zn-doped p-Fe2O3 for Photoelectrolysis of Water - W. Ingler Jr. and S. Khan (Duquesne University)
10:15754 Characterization of Silicon Carbide Electrochemical Etch in Hydrofluoric Acid Aqueous Solution - G. D'Arrigo, C. Bongiorno, and V. Raineri (Consiglio Nazionale delle Ricerche CNR-IMM)
10:30755 Surface Pitting and Porous Layer Growth on n-InP Anodes in KOH - C. O'Dwyer, M. Serantoni, and D.N. Buckley (University of Limerick)
10:45756 UHV-EC Studies of Cleaning Procedures for III-V Compound Semiconductor Substrates to be Used as Substrates for Electrodeposition - M. Muthuvel, L. Ward, and J. Stickney (University of Georgia)
11:00757 Crystal Quality Determination of Wide Bandgap Materials Using X-ray Techniques - P. Feichtinger, K. Bowen (Bede Scientific Inc), B. Poust, M. Goorsky (UCLA), M. Wojtowicz, and R. Sandhu (Northrop Grumman Space Technology)
11:15758 Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure - Y.-L. Lai, R. Chen, C.-P. Liu, and Y.-W. Lin (National Cheng Kung University)
11:30759 The By-products and Etching Species from Plasma Etching of InP using HBr - E. Sabin and R. Elmadjian (Northrup Grumman)