204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
K2 - Eighth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing
Electronics/Dielectric Science and Technology
Monday, October 13, 2003
England Room, Ground Level
Single Wafer Cleaning
Co-Chairs: J. Ruzyollo and D.W. Hess
| Time | Abs# | Title |
|---|
| 10:00 | 760 |
Effective Post-Etch Residue Removal on Low-k Films using Single Wafer Processing - E. Kesters (IMEC), J. Ghekiere (SEMITOOL Inc. / IMEC), P. Van Doorne, G. Vereecke, P.W. Mertens, and M.M. Heyns (IMEC) |
| 10:15 | 761 |
Aqueous Sinlge Pass Single Wafer Al/Via Cleaning - S. Verhaverbeke, C. Beaudry, and P. Boelen (Applied Materials) |
| 10:30 | 762 |
Improved Rinsing Efficiency on Post-etch Residue Wet Clean for Cu/ Low-K Damascene Structures - C.K. Chang, C.F. Tsang (Institute of Microelectronics), V. Nguyen, Q. Zhang (Verteq Inc.), and T.H. Foo (Institute of Microelectronics) |
| 10:45 | 763 |
Single Wafer Wet Cleaning Based on Short Cycle Time, Ambient Temperature and a Small Amount of Chemical - K.-I. Sano and A. Izumi (Dainippon Screen Mfg. Co., Ltd) |
| 11:00 | 764 |
Innovative Surface Preparation Solutions for Sub-90nm IC devices - E. Baiya, J. Rosato, and R. Yalamanchili (SCP Global Technologies) |
| 11:15 | 765 |
A New Ozone Clean Concept for Single Wafer Process - Y. Kim, J. Kim, Y. Lee, and H. Cho (NOVO Research Inc.) |
| 11:30 | 766 |
Predictive Model-based Control of Critical Oxide Etches for sub-100nm Processes in a Single Wafer Wet Processing System - Y. Lu, R. Yalamanchili, and J. Rosato (SCP Global Technologies, Inc.) |
| 11:45 | 767 |
Non-IPA Wafer Drying Technology for Single-spin Wet Cleaning - K. Miya, T. Kishimoto, and A. Izumi (Dainippon Screen Mfg. Co., Ltd.) |
Front End of the Line Cleaning
Co-Chairs: R.S. Ridley and A.J. Muscat
| Time | Abs# | Title |
|---|
| 2:00 | 768 |
Integration of High-k Gate Dielectrics – Wet Etch, Cleaning and Surface Conditioning - S. De Gendt, S. Beckx, M. Caymax, M. Claes, T. Conard, A. Delabie, W. Deweerd (IMEC), H. Kraus (SEZ assignee at IMEC), B. Onsia, V. Parishev, R. Puurunen, E. Rohr, J. Snow (IMEC), W. Tsai (ISMT assignee at IMEC), P. Van Doorne, S. Van Elshocht (IMEC), J. Vertommen (LAM assignee at IMEC), T. Witters, and M. Heyns (IMEC) |
| 2:30 | 769 |
Study of the Effect of Silicon Surface Treatment on EOT in High-k Dielectric MOS Gate Stacks - K. Chang, K. Shanmugasundaram (Pennsylvania State University), D.-O. Lee, P. Roman (Primaxx Inc.), J. Shallenberger (Pennsylvania State University), P. Mumbauer, R. Grant (Primaxx Inc.), and J. Ruzyllo (Pennsylvania State University) |
| 2:45 | 770 |
Effect of RIE Sequence and Post-RIE Surface Processing on the Reliability of Gate Oxide in a Trench - T. Grebs, R. Ridley, G. Dolny, J. Mytych, J. Michaelowicz, C.-T. Wu, R. Agarwal, J. Ruzyllo, K. Chang, and W. Dimachkie (Fairchild Semiconductor) |
| 3:00 | 771 |
Improvements in Advanced Gate Oxide Electrical Performance by the use of an Ozonated Water Clean Process - J. Barnett, N. Moumen (International SEMATECH), and D. Riley (Texas Instruments) |
| 3:15 | 772 |
Minimizing Oxide Loss in Immersion SC1 Process - S. Loper and T. Wagener (FSI International) |
| 3:30 | 773 |
Performance of an Advanced Front of the Line Clean Compared to the Process of Record Clean in a Manufacturing Environment - R. Novak, I. Kashkoush, T. Nolan (Akrion LLC), J. Hunter, and J. Straight (Honeywell) |
| 3:45 | 774 |
Characterization of Post Plasma Etch Cleans on Tungsten Contact - P. Phatak, K. Ikeuchi, J. Zhang, C. Yang (Cypress Semiconductor), J. Kim, H. Cho, Y. Kim (NOVO Research Inc.), H. Lee (Cypress Semiconductor), D. Maloney, and A. Phung (EKC Technology) |
| 4:00 | 775 |
The Mechanism of Poly-Si Etching during Poly/W Gate Cleaning by Fluorine Based Cleaning Solution - S.Y. Kim, S.J. Choi, C.K. Hong, W.S. Han, and J.T. Moon (Samsung Electronics Co. LTD) |
| 4:15 | 776 |
Sub-Nanometer Gate Stack Scaling Using NH3 Interface Engineering - J. Peterson, J. Barnett, C. Young, A. Hou, J. Gutt, S. Gopalan, C.H. Lee, H.J. Li, N. Moumen, N. Chaudhary, B.H. Lee, G. Bersuker, P.M. Zietzoff, G.A. Brown, P. Lysaght, M. Gardner, R.W. Murto, and H.R. Huff (International SEMATECH) |
Tuesday, October 14, 2003
Physical and Chemical Methods of Particle Removal
Co-Chairs: R.E. Novak and J. Ruzyllo
| Time | Abs# | Title |
|---|
| 8:30 | 777 |
Mechanisms of Particle Removal during Brush Scrubber Cleaning - K. Xu, R. Vos, G. Vereecke, P. Mertens, M. Heyns (IMEC), and C. Vinckier (KU Leuven) |
| 8:45 | 778 |
Evaluation of Megasonic Cleaning Systems for Particle Removal Efficiency and Damaging - G. Vereecke, F. Holsteyns (IMEC), J. Veltens (KHLeuven), M. Lux, S. Arnauts, K. Kenis, R. Vos, P. Mertens, and M. Heyns (IMEC) |
| 9:00 | 779 |
Mechanical Resistance of Fine Microstructures Related to Particle Cleaning Mechanisms - F. Tardif, O. Raccurt, J.C. Barbe, F. De Crecy, P. Besson, and A. Danel (CEA-GRE) |
| 9:30 | 780 |
Evaluation of Megasonic Cleaning Processes - F. Holsteyns (Imec), A. Riskin (KHLim), and P.W. Mertens (Imec) |
| 9:45 | 781 |
Megasonic Cleaning of Sensitive Structures - C. Franklin, Y. Wu, H. Lee, J. Lauerhaas, and B. Fraser (Verteq) |
| 10:00 | 782 |
Study of the Cleaning Control using a Megahertz Nozzle Sound Pressure Monitor System for Single-plate Spin Cleaners - H. Fujita, N. Hayamizu, T. Goshizono, and N. Sakurai (Toshiba Corporation) |
| 10:15 | 783 |
Experimental Validation of a Science-Based Undercut Removal Model for the Cleaning of Micron-Scale Particles from Surfaces - G. Kumar and S. Beaudoin (Purdue University) |
| 10:30 | 784 |
Resonance Damage of Semiconductors by Acoustic Excitation - K. Christenson (FSI International) |
| 10:45 | 785 |
Substrate Damage-free Laser Shock Cleaning of Particles - A. Busnaina (Northeastern University), J.G. Park (Hanyang University), J.M. Lee, and S.Y. You (Innovative Laser Technology) |
| 11:00 | 786 |
Investigation of Capillary Effect Between Particle and Wafer Surface Inlaser Shock Cleaning - Y.-J. Kang, S.-H. Lee, J.-G. Park (Hanyang University), J.-M. Lee, and T.-H. Kim (IMT Co. Ltd.) |
| 11:15 | 787 |
Effect of Surfactants on Particle Contamination in Dilute HF Solutions - T. Vehmas, H. Ritala (VTT), and O. Anttila (Okmetic) |
| 11:30 | 788 |
Interfacial and Electrokinetic Characterization of IPA Solutions - J.-S. Ryu, S.-H. Lee, D.-H. Eom, J.-G. Park (Hanyang University), N.-G. Yoon, and J.-Y. Lee (A-Tech Ltd.) |
Supercritical, Cryogenic, and Dry Cleaning
Co-Chairs: T. Hattori and S. Verhaverbeke
| Time | Abs# | Title |
|---|
| 2:00 | 789 |
Integrated Gas Phase Surface Preparation of Silicon and Resistless Deposition - C. Finstad, G. Montano, A. Thorsness, and A. Muscat (University of Arizona) |
| 2:15 | 790 |
In Situ Process For Periodic Cleaning of Low Temperature Nitride Furnaces - D. Foster, R. Herring, J. Ellenberger (ASML), A. Johnson, and C. Hartz (Air Products and Chemicals, Inc.) |
| 2:30 | 791 |
Making Supercritical CO2 Cleaning Work: Proper Selection of Co-Solvents and Other Issues - A. Sehgal (SCP Global Technologies, Inc.) |
| 2:45 | 792 |
Chemical Additive Formulations for Silicon Surface Cleaning in Supercritical Carbon Dioxide - M. Korzenski, C. Xu, T. Baum (Advanced Technology Materials, Inc.), K. Saga, H. Kuniyasu, and T. Hattori (Sony Corporation) |
| 3:00 | 793 |
Surfactant Enabled Supercritical CO2 Cleaning Processes for BEOL Applications: Post-barrier breakthrough - J. DeYoung, S. Gross, M. Wagner (Micell Integrated Systems), Z. Hatcher (SEZ America, Incorporated), and C. Ma (BOC Edwards) |
| 3:15 | 794 |
CO2-Expanded Liquids as Alternatives to Conventional Solvents for Resist and Residue Removal - M. Spuller and D. Hess (Georgia Institute of Technology) |
| 3:30 | 795 |
Photoresist Stripping using Supercritical CO_2-based Processes - A. Danel (Leti), C. Millet (Altis Semiconductor), V. Perrut (Récif S.A.), J. Daviot (EKC Technology Ltd), M. Rignon (Air Liquide), and F. Tardif (Leti) |
| 3:45 | 796 |
Post-Etch Cleaning of 300mm Dual Damascene Low-k Dielectric Structures Using Supercritical CO_2 - R.B. Turkot Jr, V.S. RamachandraRao, S.A. Iyer, and S.C. Clark (Intel Corporation) |
| 4:00 | 797 |
Impact of Phase Behavior on Photoresist Removal Using CO_2 Based Mixtures - G. Levitin, S. Myneni, and D. Hess (Georgia Institute of Technology) |
| 4:15 | 798 |
Copper low-k Contamination and Post Etch Residues Removal Using Supercritical CO2-based Processes - C. Millet (Altis Semiconductor), A. Danel (CEA-DRT), V. Perrut (Recif S.A.), J. Daviot (EKC Technology Ltd), and F. Tardif (CEA-DRT) |
| 4:30 | 799 |
Water Removal and Repair of Porous Ultra Low k Films Using Supercritical CO2 - B. Xie and A. Muscat (University of Arizona) |
| 4:45 | 800 |
Cleaning of Fragile Fine Structures with Cryogenic Nitrogen Aerosols - H. Saito, A. Munakata, D. Ichishima, T. Yamanishi (Sumitomo Heavy Industries, Ltd.), A. Okamoto, K. Saga, H. Kuniyasu, and T. Hattori (Sony Corporation) |
Wednesday, October 15, 2003
Joint K1 and Post CMP Cleaning
Co-Chairs: S. Seal and R.L. Opila
| Time | Abs# | Title |
|---|
| 10:30 | 801 |
Advanced Front End of the Line Clean for Post CMP Processes - I. Kashkoush, T. Nolan, D. Nemeth, and R. Novak (Akrion LLC) |
| 10:45 | 802 |
Low Carbon Contamination and Water Mark Free Post-CMP Cleaning of Hydrophobic OSG Dielectrics - K. Bartosh, E. Brown, S. Naghshineh, D. Peters, and E. Walker (ESC, Inc.) |
| 11:00 | 803 |
Adhesion and Removal of Silica and Alumina Slurry Particles During Cu CMP Process - J. Park (Hanyang University) and A.A. Busnaina (Northeastern) |
| 11:15 | 804 |
Copper Post-CMP Cleaning Galvanic Phenomenon Investigated by EIS - C. Gabrielli, E. Ostermann, H. Perrot (LISE), and S. Mege (Altis Semiconductor) |
| 11:30 | 805 |
Aqueous Cryogenically Enhanced Post Copper CMP Cleaning - S. Banerjee, A. Via (ATS Eco-Snow Systems), S. Joshi (Texas Instruments Inc.), and J. Eklund (International SEMATECH) |
| 11:45 | 806 |
Fixed-Abrasive Metal CMP and its Applications in FEOL and BEOL Integration - Y. Li and L. Economikos (IBM Microelectronics) |
Metal Cleaning and Organic and Metal Removal
Co-Chairs: J. Ruzyllo and R.E. Novak
| Time | Abs# | Title |
|---|
| 2:00 | 807 |
Characterizing Etch Residue Removal From Low-K ILD Structures Using Aqueous and Non-Aqueous Chemistries - J. Moore (General Chemical Corporation) |
| 2:15 | 808 |
Determination of Molecular Organic Contamination on Si Wafers and Process Chamber Components with Thermal Desorption (TD)-GC-MS - K. Wang and S. Tan (ChemTrace Corporation) |
| 2:30 | 809 |
Photoresist Removal Using NH3 Decomposed Species Generated by Heated Catalyzer - A. Murakami, T. Miki (Japan Advanced Institute of Science and Technology), A. Izumi (Kyushu Institute of Technology), A. Masuda, and H. Matsumura (Japan Advanced Institute of Science and Technology) |
| 2:45 | 810 |
Reversing of Silicon Surface Aging by Lamp Cleaning - K. Shanmugasundaram, K. Chang, J. Shallenberger (The Pennsylvania State University), A. Danel, F. Tardif (CEA-LETI), and J. Ruzyllo (The Pennsylvania State University) |
| 3:00 | 811 |
Advanced Photo Resist removal using Ozone and Moist UPW in semiconductor production - K. Wolke, L. von aswege (SCP Global technologies GmbH), G. Philit, M. Madore (ATMEL), M.-C. Clech (Altis Semiconductor), A. Chabli, and D. Louis (LETI CEA) |
| 3:15 | 812 |
Cleaning Chemistry with Complexing Agents (CAs): CA Degradation Monitoring by UV/VIS-Spectroscopy - O. Doll and B. Kolbesen (Johann Wolfgang Goethe-Unversity) |
| 3:30 | 813 |
Additive Technologies for Sub 100nm Device Cleaning - H. Morinaga, A. Itou, and H. Mochizuki (Mitsubishi Chemical Corporation) |
| 3:45 | 814 |
Degradation of Oxide Properties Caused by Low-level Metallic Contamination - A. Hoff, E. Oborina, S. Aravamudhan, and A. Isti (University of South Florida) |
| 4:00 | 815 |
Cleaning Chemistry with Complexing Agents (CAs): Decomposition of CAs in Hydrgoen Peroxide and APM studied with HPLC - S. Metzger and B.O. Kolbesen (Johann Wolfgang Goethe Universitat) |
| 4:15 | 816 |
Cleaning of Metal Gate Stacks for the Sub 90nm Technology Node - H. Kraus (IMEC), K. Vermeyen (Katholieke Hogeschool Limburg), J. Snow, W. Fyen, P. Mertens (IMEC), and F. Kovacs (SEZ) |
| 4:30 | 817 |
Passivation of Aluminum and Aluminum -Copper Alloys in Aqueous Acids - I. Rink and M. Knotter (Philips Semiconductors) |
| 4:45 | 818 |
Behavior of Aluminum in Ozonated Water, Optical and Electrochemical Study - H. Ritala, K. Solehmainen, L. Grönberg (VTT Information Technology), and A. Pehkonen (Helsinki University of Technology) |
| 5:00 | 819 |
Influence of Aluminum Bond Pad Surface Condition on Probe-ability - K. Gunturu, C. Hatcher, K. Burnside, T. Corsetti, R. Lappan, M. Engle, and J. Prasad (AMI Semiconductor,Inc.) |
| 5:15 | 820 |
Open Circuit and Galvanostatic Behavior of Copper Oxidized and Reduced in Various Solutions - M. Hughes, S. Naghshineh, and D. Peters (ESC Inc.) |
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