204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
L2 - Seventh International Symposium on Low Temperature Electronics
Electronics/Dielectric Science and Technology/Electronics Division of The American Ceramic Society
Tuesday, October 14, 2003
Council Room, Lobby Level
Device Physics and Components
Co-Chairs: J. Deen and A.S. Bhalla
| Time | Abs# | Title |
|---|
| 9:00 | 876 |
DIBL Evaluation for 0.13 um Floating-Body Partially Depleted SOI MOSFET in Low Temperature Operation - J.A. Martino (Centro Universitario da FEI) and M.A. Pavanello (Universidade de Sao Paulo - Escola Politecnica) |
| 9:30 | 877 |
Emerging Double-Gate MOS Devices Technology - E. Suzuki, Y. Liu, M. Masahara, and K. Ishii (National Institute of Advanced Industrial Science and Technology (AIST)) |
| 10:00 | 878 |
New Insights on the Cryogenic Self-Heating of Silicon MOSFETs: Thermal Resistance of the Ceramic Package - F.J. De la Hidalga-W, F.J. Cortes-P (Instituto Nacional de Astrofisica, Optica y Electronica), and M.J. Deen (McMaster University) |
| 10:30 | |
Twenty-Minute Intermission |
| 10:50 | 879 |
High-Speed Conversion of Picosecond-Millivolt Pulse Signals to CMOS Voltage Levels - T. Van Duzer, S.R. Whiteley, X. Meng, Q. Liu (University of California), and N. Yoshikawa (Yokohama National University) |
| 11:20 | 880 |
Operation of Double Gate Graded-Channel Transistors at Low Temperatures - M.A. Pavanello (Universidade de Sao Paulo), J.A. Martino (Centro Universitario de FEI), T.M. Chung, A. Kranti, J.-P. Raskin, and D. Flandre (Universite Catholique de Louvain) |
| 11:40 | 881 |
Low Temperature Electrical Properties of a Boron-Doped Amorphous Silicon Bolometer - A. Heredia-J (Instituto Nacional de Astrofisica, Optica y Electronica), F.J. De la Hidalga-W, A. Torres-J (Instituto Nacional de Astrofisica, Optica y Electronica, INAOE), and A. Jaramillo-N (Instituto Nacional de Astrofisica, Optica y Electronica) |
Cryogenic Electronics for Space Applications
Co-Chairs: R.L. Patterson and C. Claeys
| Time | Abs# | Title |
|---|
| 2:00 | 882 |
Electronics for Low Temperature Applications in Space and on Earth - R. Patterson (NASA Glenn Research Center), A. Hammoud (QSS Group), S. Gerber (ZIN Technologies), M. Elbuluk (University of Akron), E. Overton, and J. Dickman (NASA Glenn Research Center) |
| 2:30 | 883 |
A Comprehensive Evaluation of Commercial Off The Shelf (COTS) Power Electronic Devices, Components, and Converters at Cryogenic Temperatures for Deep Space Applications - M.E. Elbuluk (University of Akron), S.S. Gerber (ZIN Technologies, Inc.), A. Hammoud (QSS Group, Inc.), and R.L. Patterson (NASA Glenn Research Center) |
| 2:50 | 884 |
Performance of High-Voltage IGBTs at Cryogenic Temperatures - O. Mueller, E.K. Mueller, and M.J. Hennessy (MTECH Labs) |
| 3:10 | 885 |
Ge Semiconductor Devices for Cryogenic Power Electronics- IV - R.R. Ward, W.J. Dawson, L. Zhu, R.K. Kirschman (GPD Optoelectronics Corp.), M.J. Hennessy, E.K. Mueller (MTECH Labs LLC), R.L. Patterson, J.E. Dickman (NASA Glenn Research Center), and A. Hammoud (QSS Group Inc) |
| 3:30 | |
Twenty-Minute Intermission |
| 3:50 | 886 |
Analog Power and Digital Circuits at Cryogenic Temperatures For Space - V. Kapoor, A. Menezes, A. Vijh, and R. Patterson (The University of Toledo) |
| 4:10 | 887 |
SiGe Semiconductor Devices for Cryogenic Power Electronics - R.R. Ward, W.J. Dawson, L. Zhu, R.K. Kirschman (GPD Optoelectronics Corp.), O. Mueller (LTE-Low Temperature Electronics), R.L. Patterson, J.E. Dickman (NASA Glenn Research Center), and A. Hammoud (QSS Group Inc.) |
| 4:30 | 888 |
Liquid Helium Temperature Irradiation Effects on the Operation of 0.7 Micron CMOS Devices for Cryogenic Space Applications - C. Claeys, A. Mercha, Y. Creten, J. Putzeys, P. De Moor, E. Simoen, C. Van Hoof (IMEC), A. Mohammadzadeh, and R. Nickson (ESTEC) |
| 4:50 | 889 |
External Electronic Packaging for Extended Mars Surface Missions - A.A. Shapiro, E.A. Kolawa, and M.M. Mojarradi (National Aeronautics ans Space Adminsitration) |
Wednesday, October 15, 2003
Emerging Materials and Devices
Co-Chairs: G. Oleszek and J. Deen
|