204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003


N1 - Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV

Electronics/Electrodeposition/Luminescence and Display Materials

Tuesday, October 14, 2003

Cloister South, Lobby Level

Photonic and Electronic Materials and Devices

Co-Chairs: A.G. Baca and T.D. Moustakas

2:00937 High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE - A. Dabiran, A. Osinsky, B. Hertog, P. Chow (SVT Associates, Inc.), V. Kumar, and I. Adesida (University of Illinois at Urbana-Champaign)
2:30938 High Efficiency Nitride LEDs for use in Solid State Lighting Applications - A. Fischer, D. Koleske, A. Allerman, M. Crawford, K. Bogart, C. Mitchell, D. Follstaedt, K. Cross, K. Fullmer, and J. Figiel (Sandia National Labs)
3:00939 Optical Properties of GaN/AlN Quantum Dots Grown by Molecular Beam Epitaxy - A. Neogi (University of North Texas)
3:30 Fifteen-minute Intermission
3:45940 Electronic Structure Of GaNP: Insights From Optical Studies - I.A. Buyanova, W.M. Chen (Linkoping University), C.W. Tu (University of Californi), A. Polimeni, and M. Capizzi (Universitadegli Studi di Roma)
4:15941 Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides - W. Burdett, L. Chernyak (University of Central Florida), and A. Osinsky (SVT Associates)
4:45942 Enabling Ohmic Contact Formation To P-Type Gan By In Situ Mg Surface Treatment During Growth By Ammonia- Molecular Beam Epitaxy - H. Tang, J. Bardwell, and J. Webb (National Research Council Canada)
5:00943 Magnesium Oxide and Scandium Oxide Growth for Gate Dielectric and Field Passivation for GaN Power Devices - B. Gila, B. Luo, J. Kim, R. Mehandru, J. LaRoche, A. Onstine, C. Abernathy, F. Ren, and S. Pearton (University of Florida)

Exhibit Hall, Ground Level

Technical Exhibit and Poster Session, 7:00 - 9:00 PM

o944 Effect of Bath Temperature on the Properties of Pulse Electrodeposited CdSe Films - M. Murali, C. Thambidurai (Central E lectrochemical Research Institute), K. Ambalavanan, and T. Trivedi (Central Electrochemical Research Institute)
o945 Optoelectronic Characteristics of Pulse Electrodeposited ZnSe Films - M. Murali, N. Kumar (Central E lectrochemical Research Institute), S. Chander (Central Electrochemical Research Institute), and B. Balasubramanian (RaJu's College)
o946 Characteristics of CdSe Films Brush Plated on Substrates Maintained at Different Temperatures - M. Murali (Central E lectrochemical Research Institute), A. Austine, and J. Jayasutha (J.J.College of Engineering)
o947 Microstructural Characterization of the GaN Films Grown by Maskless Pendeo-epitaxy - H.K. Cho, D.C. Kim (Dong-A University), J.Y. Lee, D.J. Park (Korea Advanced Institute of Science and Technology), H.-S. Cheong, and C.-H. Hong (Chonbuk National University)
o948 Microspectroscopy Studies of Mg Doped GaN Nanorods - Y.-H. Chang and H.-C. Kuo (National Chiao-Tung University)
o949 Effect of AlN/GaN Superlattices in Reducing Dislocation Density in GaN Grown by MOVPE - I. Waki (University of Tokyo,), C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano (University of Tokyo)

Wednesday, October 15, 2003

Cloister South, Lobby Level

Photonic Materials and Devices

Co-Chairs: S.J. Pearton and J. Laroche

10:00950 III-N Optical-Electronic Devices Over-C and R-Plane Sapphire and SIC Substrates - M.A. Khan, C. Chen, W. Sun, M. Shatalov, M. Gaevski, V. Adivaharan, J.P. Zhang, A. Chitnis, G. Simin, and J. Yang (University of South Carolina)
10:30951 Field and Localization Effects in InGaN Quantum Wells - A. Bell, M. Stevens (Arizona State University), F. Ponce, J. Christen (Otto-von-Guericke University), F. Bertram, H. Marui, and S. Tanaka (Nichia Corporation)
11:00952 Fabrication, Characterization and Applications of III-Nitride Light-emitting Diodes - X.-A. Cao, S.D. Arthur, A. Ebong, and S.F. LeBoeuf (GE Research Center)
11:30953 The Electronic Structure of Dislocations in GaN - I. Arslan (University Of California), N. Browning (University of California), and S. Ogut (University of Illinois)
11:45954 Effect of Carrier Gas on the Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy at Low Temperature - H.-P. Liu, I.-G. Chen (National Cheng-Kung University), J.-D. Tsay, W.-Y. Liu, Y.-D. Guo, J.T. Hsu (Industrial Technology Research Institute,), H.-L. Liu (National Taiwan Normal University), L.-C. Chen, and C.-H. Shen (National Taiwan University)

Electronics, Photonics, and Spintronics Materials and Devices

Co-Chairs: H.M. Ng and K. Shiojima

2:00955 Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films - N. Shepherd, A. Kale, W. Glass, J.H. Kim, D. Devito, M. Davidson, and P. Holloway (University of Florida)
2:30956 Optical Spin Manipulation in ZnMnSe Based Quantum Structures - W. Chen, I. Buyanova (Linkoping University), A. Toropov, S. Ivanov, and P. Kop'ev (Russian Academy of Sciences)
3:00957 Ilmenite- Hematite (IH) - A Magnetic Semiconductor Material for Microelectronics and Spintronics - P. Periaswamy (University of Alabama), S. Ardalan (Prarie View A and M University), R. Schad (University of Alabama), R. Wilkins (Prarie View A and M University), and R. Pandey (University of Alabama)
3:15 Fifteen-Minute Intermission
3:30958 Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequecny Mixing - I. Salama, C. Middleton (University of Central Florida), N. Quick (AppliCote Associates LLC), G. Boreman, and A. Kar (University of Central Florida)
4:00959 Surface State Characterization Methods for SiO2 on 6H-SiC - J. LaRoche, J. Kim, B. Luo, S. Kang, R. Mehandru (University of Florida), Y. Iorkawa (Toyota), S. Pearton (University of Florida), G. Chung (Dow Corning), and F. Ren (University of Florida)
4:30960 The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors - B.S. Kang, S. Kim, J. Kim, K.H. Baik, S. Pearton, B. Gila, C. Abernathy (University of Florida), C. Pan, G. Chen, J.-I. Chyi (National Central University), M. Sheplak (Department of University of Florida), T. Nishida (University of Florida), S. Chu (Multplex Inc.), and F. Ren (University of Florida)
4:45961 High Performance AlGaN/GaN HEMTs with Recessed Gate - Y. Sano, K. Kaifu, J. Mita, H. Okita, T. Sagimori, T. Ushikubo (Oki electric Industry Co., Ltd), H. Ishikawa, T. Egawa, and T. Jimbo (Nagoya Institute of Technology)
5:15962 GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates - Y. Irokawa (Toyota Central Research and Development Laboratories, Inc.), W.-B. Luo, J. Laroche, S. Kang, J. Kim, F. Ren (University of Florida), G.-T. Chen, J.-I. Chyi (National Central University), S.S. Park (Samsung Advanced Institute of Technology), B. Gila, C. Abernathy, K. Baik, and S. Pearton (University of Florida)

Thursday, October 16, 2003

Sensor, Electronic, and Spintronic Materials and Devices

Co-Chairs: F. Ren and A.G. Baca

8:30963 GaN Field Effect Chemical Sensors - M. Eickhoff, G. Steinhoff, O. Weidemann, M. Hermann (Technical University Munich), G. Mueller (EADS Deutschland GmbH), and M. Stutzmann (Technical University Munich)
9:00964 Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications - J. Zavada (Army Research Office)
9:30 Thirty-Minute Intermission
10:00965 Optimization of Ferromagnetic GaMnN for III-N Based Device Applications - G. Thaler, R. Frazier, C. Abernathy, S. Pearton, R. Rairagh, J. Kelly, and A. Hebard (University of Florida)
10:15966 Ternary Oxides as Lattice Matched Gate Dielectrics for GaN - A. Onstine, B. Gila, J. LaRoche, C. Abernathy, S. Pearton, and F. Ren (University of Florida)
10:30967 In-situ Chemical Treatments For The Removal of AlN/SiC Interfacial Contamination - D. Stodilka, B. Gila, C. Abernathy, E. Lambers, F. Ren, and S. Pearton (University of Florida)
10:45968 Design, Fabrication, and Evaluation of High Performance Diamond- Based Power Diodes - Y. Gurbuz, W.P. Kang (Sabanci University), and J.L. Davidson (Vanderbilt University)
11:00969 Ferromagnetism In Mn- And Sn-Codoped ZnO Films Grown By Pulsed Laser Deposition - M. Ivill and D. Norton (University of Florida)
11:15970 Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers - R. Frazier, G. Thaler, C. Abernathy, S. Pearton (University of Florida), M. Nakarmi, J. Lin, H. Jiang (Kansas State University), R. Rairigh, J. Kelly, A. Hebard (University of Florida), J. Zavada (U. S. Army Research Office), and R. Wilson (Consultant)