204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society
October 12-October 16, 2003
PROGRAM INFORMATION
N1 - Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV
Electronics/Electrodeposition/Luminescence and Display Materials
Tuesday, October 14, 2003
Cloister South, Lobby Level
Photonic and Electronic Materials and Devices
Co-Chairs: A.G. Baca and T.D. Moustakas
| Time | Abs# | Title |
|---|
| 2:00 | 937 |
High Performance Wide-Bandgap Photonic and Electronic Devices Grown by MBE - A. Dabiran, A. Osinsky, B. Hertog, P. Chow (SVT Associates, Inc.), V. Kumar, and I. Adesida (University of Illinois at Urbana-Champaign) |
| 2:30 | 938 |
High Efficiency Nitride LEDs for use in Solid State Lighting Applications - A. Fischer, D. Koleske, A. Allerman, M. Crawford, K. Bogart, C. Mitchell, D. Follstaedt, K. Cross, K. Fullmer, and J. Figiel (Sandia National Labs) |
| 3:00 | 939 |
Optical Properties of GaN/AlN Quantum Dots Grown by Molecular Beam Epitaxy - A. Neogi (University of North Texas) |
| 3:30 | |
Fifteen-minute Intermission |
| 3:45 | 940 |
Electronic Structure Of GaNP: Insights From Optical Studies - I.A. Buyanova, W.M. Chen (Linkoping University), C.W. Tu (University of Californi), A. Polimeni, and M. Capizzi (Universitadegli Studi di Roma) |
| 4:15 | 941 |
Cathodoluminescence Studies of Electron Injection-Induced Effects in III-Nitrides - W. Burdett, L. Chernyak (University of Central Florida), and A. Osinsky (SVT Associates) |
| 4:45 | 942 |
Enabling Ohmic Contact Formation To P-Type Gan By In Situ Mg Surface Treatment During Growth By Ammonia- Molecular Beam Epitaxy - H. Tang, J. Bardwell, and J. Webb (National Research Council Canada) |
| 5:00 | 943 |
Magnesium Oxide and Scandium Oxide Growth for Gate Dielectric and Field Passivation for GaN Power Devices - B. Gila, B. Luo, J. Kim, R. Mehandru, J. LaRoche, A. Onstine, C. Abernathy, F. Ren, and S. Pearton (University of Florida) |
Exhibit Hall, Ground Level
Technical Exhibit and Poster Session, 7:00 - 9:00 PM
| Time | Abs# | Title |
|---|
| o | 944 |
Effect of Bath Temperature on the Properties of Pulse Electrodeposited CdSe Films - M. Murali, C. Thambidurai (Central E lectrochemical Research Institute), K. Ambalavanan, and T. Trivedi (Central Electrochemical Research Institute) |
| o | 945 |
Optoelectronic Characteristics of Pulse Electrodeposited ZnSe Films - M. Murali, N. Kumar (Central E lectrochemical Research Institute), S. Chander (Central Electrochemical Research Institute), and B. Balasubramanian (RaJu's College) |
| o | 946 |
Characteristics of CdSe Films Brush Plated on Substrates Maintained at Different Temperatures - M. Murali (Central E lectrochemical Research Institute), A. Austine, and J. Jayasutha (J.J.College of Engineering) |
| o | 947 |
Microstructural Characterization of the GaN Films Grown by Maskless Pendeo-epitaxy - H.K. Cho, D.C. Kim (Dong-A University), J.Y. Lee, D.J. Park (Korea Advanced Institute of Science and Technology), H.-S. Cheong, and C.-H. Hong (Chonbuk National University) |
| o | 948 |
Microspectroscopy Studies of Mg Doped GaN Nanorods - Y.-H. Chang and H.-C. Kuo (National Chiao-Tung University) |
| o | 949 |
Effect of AlN/GaN Superlattices in Reducing Dislocation Density in GaN Grown by MOVPE - I. Waki (University of Tokyo,), C. Kumtornkittikul, Y. Shimogaki, and Y. Nakano (University of Tokyo) |
Wednesday, October 15, 2003
Cloister South, Lobby Level
Photonic Materials and Devices
Co-Chairs: S.J. Pearton and J. Laroche
| Time | Abs# | Title |
|---|
| 10:00 | 950 |
III-N Optical-Electronic Devices Over-C and R-Plane Sapphire and SIC Substrates - M.A. Khan, C. Chen, W. Sun, M. Shatalov, M. Gaevski, V. Adivaharan, J.P. Zhang, A. Chitnis, G. Simin, and J. Yang (University of South Carolina) |
| 10:30 | 951 |
Field and Localization Effects in InGaN Quantum Wells - A. Bell, M. Stevens (Arizona State University), F. Ponce, J. Christen (Otto-von-Guericke University), F. Bertram, H. Marui, and S. Tanaka (Nichia Corporation) |
| 11:00 | 952 |
Fabrication, Characterization and Applications of III-Nitride Light-emitting Diodes - X.-A. Cao, S.D. Arthur, A. Ebong, and S.F. LeBoeuf (GE Research Center) |
| 11:30 | 953 |
The Electronic Structure of Dislocations in GaN - I. Arslan (University Of California), N. Browning (University of California), and S. Ogut (University of Illinois) |
| 11:45 | 954 |
Effect of Carrier Gas on the Growth Mechanism of GaN Crystal by Hydride Vapor Phase Epitaxy at Low Temperature - H.-P. Liu, I.-G. Chen (National Cheng-Kung University), J.-D. Tsay, W.-Y. Liu, Y.-D. Guo, J.T. Hsu (Industrial Technology Research Institute,), H.-L. Liu (National Taiwan Normal University), L.-C. Chen, and C.-H. Shen (National Taiwan University) |
Electronics, Photonics, and Spintronics Materials and Devices
Co-Chairs: H.M. Ng and K. Shiojima
| Time | Abs# | Title |
|---|
| 2:00 | 955 |
Localized Quantum State Luminescence from Wide Bandgap ZnS and GaN Thin Films - N. Shepherd, A. Kale, W. Glass, J.H. Kim, D. Devito, M. Davidson, and P. Holloway (University of Florida) |
| 2:30 | 956 |
Optical Spin Manipulation in ZnMnSe Based Quantum Structures - W. Chen, I. Buyanova (Linkoping University), A. Toropov, S. Ivanov, and P. Kop'ev (Russian Academy of Sciences) |
| 3:00 | 957 |
Ilmenite- Hematite (IH) - A Magnetic Semiconductor Material for Microelectronics and Spintronics - P. Periaswamy (University of Alabama), S. Ardalan (Prarie View A and M University), R. Schad (University of Alabama), R. Wilkins (Prarie View A and M University), and R. Pandey (University of Alabama) |
| 3:15 | |
Fifteen-Minute Intermission |
| 3:30 | 958 |
Laser-Metallized Silicon Carbide Schottky Diodes for Millimeter Wave Detection and Frequecny Mixing - I. Salama, C. Middleton (University of Central Florida), N. Quick (AppliCote Associates LLC), G. Boreman, and A. Kar (University of Central Florida) |
| 4:00 | 959 |
Surface State Characterization Methods for SiO2 on 6H-SiC - J. LaRoche, J. Kim, B. Luo, S. Kang, R. Mehandru (University of Florida), Y. Iorkawa (Toyota), S. Pearton (University of Florida), G. Chung (Dow Corning), and F. Ren (University of Florida) |
| 4:30 | 960 |
The Effect of External Strain on the Conductivity of AlGaN/GaN High Electron Mobility Transistors - B.S. Kang, S. Kim, J. Kim, K.H. Baik, S. Pearton, B. Gila, C. Abernathy (University of Florida), C. Pan, G. Chen, J.-I. Chyi (National Central University), M. Sheplak (Department of University of Florida), T. Nishida (University of Florida), S. Chu (Multplex Inc.), and F. Ren (University of Florida) |
| 4:45 | 961 |
High Performance AlGaN/GaN HEMTs with Recessed Gate - Y. Sano, K. Kaifu, J. Mita, H. Okita, T. Sagimori, T. Ushikubo (Oki electric Industry Co., Ltd), H. Ishikawa, T. Egawa, and T. Jimbo (Nagoya Institute of Technology) |
| 5:15 | 962 |
GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates - Y. Irokawa (Toyota Central Research and Development Laboratories, Inc.), W.-B. Luo, J. Laroche, S. Kang, J. Kim, F. Ren (University of Florida), G.-T. Chen, J.-I. Chyi (National Central University), S.S. Park (Samsung Advanced Institute of Technology), B. Gila, C. Abernathy, K. Baik, and S. Pearton (University of Florida) |
Thursday, October 16, 2003
Sensor, Electronic, and Spintronic Materials and Devices
Co-Chairs: F. Ren and A.G. Baca
| Time | Abs# | Title |
|---|
| 8:30 | 963 |
GaN Field Effect Chemical Sensors - M. Eickhoff, G. Steinhoff, O. Weidemann, M. Hermann (Technical University Munich), G. Mueller (EADS Deutschland GmbH), and M. Stutzmann (Technical University Munich) |
| 9:00 | 964 |
Magnetic Doping of III-V Nitrides and Novel Room Temperature Sensing Applications - J. Zavada (Army Research Office) |
| 9:30 | |
Thirty-Minute Intermission |
| 10:00 | 965 |
Optimization of Ferromagnetic GaMnN for III-N Based Device Applications - G. Thaler, R. Frazier, C. Abernathy, S. Pearton, R. Rairagh, J. Kelly, and A. Hebard (University of Florida) |
| 10:15 | 966 |
Ternary Oxides as Lattice Matched Gate Dielectrics for GaN - A. Onstine, B. Gila, J. LaRoche, C. Abernathy, S. Pearton, and F. Ren (University of Florida) |
| 10:30 | 967 |
In-situ Chemical Treatments For The Removal of AlN/SiC Interfacial Contamination - D. Stodilka, B. Gila, C. Abernathy, E. Lambers, F. Ren, and S. Pearton (University of Florida) |
| 10:45 | 968 |
Design, Fabrication, and Evaluation of High Performance Diamond- Based Power Diodes - Y. Gurbuz, W.P. Kang (Sabanci University), and J.L. Davidson (Vanderbilt University) |
| 11:00 | 969 |
Ferromagnetism In Mn- And Sn-Codoped ZnO Films Grown By Pulsed Laser Deposition - M. Ivill and D. Norton (University of Florida) |
| 11:15 | 970 |
Synthesis and Characterization of Ferromagnetic AlN and AlGaN Layers - R. Frazier, G. Thaler, C. Abernathy, S. Pearton (University of Florida), M. Nakarmi, J. Lin, H. Jiang (Kansas State University), R. Rairigh, J. Kelly, A. Hebard (University of Florida), J. Zavada (U. S. Army Research Office), and R. Wilson (Consultant) |
|