204th Meeting of The Electrochemical Society, Co-sponsored in Part by the Electronics Division of The American Ceramic Society

October 12-October 16, 2003

PROGRAM INFORMATION

S1 - Luminescence Mechanisms, Devices, and Displays

Luminescence and Display Materials

Tuesday, October 14, 2003

Gallery Room, Lobby Level

LEDs and Displays

Co-Chairs: L. Shea-Rohwer and C. Ronda

Time	Abs#	Title
10:00	1164	Materials Challenges for Flat Panel Displays - R. Petersen (SAES Getters USA, Inc)
10:30	1165	Coating Effect on CL Quenching Behavior of ZnS:Ag,Cl Phosphors - J. Bang, B. Abrams, and P. Holloway (University of Florida)
10:50	1166	Optical Properties of Eu₊₂ Activated Orthosilicate Phosphors and Their Stability Under Laser Irradiation - J. Rowland (University of Florida), G. Hong, W. Yoo, J. Yoo (Chung-Ang University), and P. Holloway (University of Florida)
11:10	1167	Photoluminescence Thermal Quenching of Encapsulated CdS and CdSe Quantum Dots for Solid State Lighting Applications - B. Abrams, L. Shea-Rohwer, J. Wilcoxon, S. Woessner, and S. Thoma (Sandia National Laboratories)
11:30	1168	Improve Hole and Electron Injection for Light Emitting Diodes Through Modifications of Electrodes with Polymer Electrolytes - T.C. Wen, L.M. Huang, and S.F. Chung (National Cheng Kung University)

Photoluminescence, Cathodoluminescence, and LEDs

Co-Chairs: L. Shea-Rohwer and C. Ronda

Time	Abs#	Title
2:00	1169	Control of Spectral Properties in Silicate-based Phosphors for LED applications - G. Hong, W. Yoo, J. Yoo (Chung-Ang University), H. Lee, J. Rowland, and P. Holloway (University of Florida)
2:20	1170	Low Voltage Cathodoluminescence from Zn_2SiO₄: Mn and Zn₂GeO₄: Mn Thin Films - L. Williams, D. Norton, and P. Holloway (University of Florida)
2:40		Twenty-Minute Intermission
3:00	1171	Visible Photoluminescence from Anodized p-type InP(100) - D. Lockwood (National Research Council), U. Schlierf, and P. Schmuki (University of Erlangen-Nuremberg)
3:20	1172	A Study on the Luminescent Properties of Erbium-activated Zn_2SnO₄ Phosphors - Y.-C. Chen, Y.-H. Chang, and P.-H. Tsai (National Cheng Kung University)

Exhibit Hall, Ground Level

Technical Exhibit and Poster Session

Co-Chair: L. Shea-Rohwer

Time	Abs#	Title
o	1173	Growth and Characterization of MgGa_2O₄:Eu Phosphor Powders Synthesized by Sol-gel method - P.-H. Tsai, Y.-H. Chang, and Y.-C. Chen (National Cheng Kung University)
o	1174	Triode-type Field Emitter Arrays Using Selectively Grown Carbon Nanotubes - H.S. Uh, S.M. Lee, P.G. Jeon, B.H. Kwak, S.S. Park (Sejong University), S.J. Kwon (Kyungwon University), S.W. Ko, E.S. Cho, and J.D. Lee (Seoul National University)
o	1175	Effects of Chemical Treatment of Gate Dielectric on The Electrical Characteristics of Low-Pressure Gas Assisted Organic Vapor Deposited Pentacene Thin-Film Transistors - S.D. Ahn, S.Y. Kang, Y.E. Lee, M.J. Joung, C.A. Kim, and K.S. Suh (Electronics and Telecommunications Research Institute)
o	1176	Enhanced Luminescence Properties of Pulsed Laser Deposited Europium Activated Yttrium Oxide Thin Films on Porous Silicon Surfaces - J. Choi and R. Singh (University of Florida)
o	1177	Effects of Divalent or Trivalent Cation Incorporation on the Emission Characteristics of SrIn2O4:Pr3+ Phosphors - S.-Y. Kang, S.-G. Kang, Y.-E. Lee, S.-D. Ahn, and K.-S. Suh (Electronics and Telecommunications Research Institute)

Wednesday, October 15, 2003

Gallery Room, Lobby Level

Luminescence Efficiency, FETs, and TFTs

Co-Chairs: B. Abrams and A. Srivastava

Time	Abs#	Title
8:40	1178	Efficient Luminescence in Compounds Showing a Very Large Stokes Shift - C. Ronda (Philips Research Laboratories Aachen)
9:00	1179	Transparent ZnO-Based FET Structures for Displays - Y. Li and D. Norton (University of Florida)
9:20	1180	Enhancing Efficiency and Stability of Nanocrystalline Porous Silicon Electroluminescence by Surface Treatments - B. Gelloz and N. Koshida (University of A and T)
9:40	1181	The Influence of Processing Parameters on Photo-luminescent Properties of BaS:Ce Phosphors by Double-Crucible Method - Y.-H. Chang and Y.-F. Lin (National Cheng Kung University)
10:00		Twenty-Minute Intermission
10:20	1182	Novel Doping Techniques for poly-Si TFT's in Active-Matrix Flexible OLED's - W.-S. Hong and J. Kim (Sejong University)
10:40	1183	Photoluminescence, Electroluminescence and Charge Photogeneration in ð- and ó-conjugated Polymers and Their Blends - V. Cimrova, D. Vyprachticky, H. Hlidkova (Academy of Sciences of the Czech Republic), and H.-H. Horhold (Universitat Jena)

Flat Panel Displays, Field Emission, and Thin Films

Co-Chairs: B. Abrams and A. Srivastava

Time	Abs#	Title
2:00	1184	Electrochemiluminescence Generated in PPV-Type Polymer Coatings - U. Janakiraman (Fritz-Haber-Institut der Max-Planck-Gesellschaft), D. Dini (University of Rome "La Sapienza"), and K. Doblhofer (Fritz-Haber-Institut der Max-Planck-Gesellschaft)
2:20	1185	Low Temperature Deposition of AlOxNy Dielectric Film on Poly-Ether Sulphone Substrate Using Plasma-Enhanced Atomic Layer Deposition - S.J. Yun, J.W. Lim, and J.-H. Lee (Electronics and Telecommunications Research Institute)
2:40		Twenty-Minute Intermission
3:00	1186	Application of Ballistic Electron Effect in Nanocrystalline Silicon Diodes to Flat Panel Displays - N. Koshida (Tokyo Univ. of A and T), A. Kojima (Quantum14), Y. Nakajima (Tokyo Univ. of A and T), T. Ichihara, Y. Watabe, and T. Komoda (Matsushita Electric Works)
3:20	1187	Effects of Oxidation Processes on the Field Emission Characteristics of Porous Polycrystalline Silicon Field Emitter - S.C. Bae, B.G. Jea, and S.Y. Choi (Kyungpook National University)
3:40	1188	Excimer Formation in Oligo[2,5-bis(hexadecyloxy)-1,4-phenylene]s Followed by Fluorescence Spectroscopy - D. Vyprachticky and V. Cimrova (Academy of Sciences of the Czech Republic)