205th Meeting of The Electrochemical Society
May 9-May 14, 2004
PROGRAM INFORMATION
E1 - Electrochemical Processing in ULSI and MEMS
Electrodeposition
Monday, May 10, 2004
Salon J, Level 3
Feature Filling in Damascene Processing
Co-Chairs: H. Deligianni and T.P. Moffat
Time | Abs# | Title |
10:00 | 147 |
Superconformal Electrochemical Deposition of Gold for Interconnects in Integrated Circuits - Z. Hu and T. Ritzdorf (Semitool, Inc.) |
10:20 | 148 |
Leveling of Electroplated Cu in Damascene Applications - J. Reid, E. Webb, J. Sukamto, Y. Takada, and T. Archer (Novellus Systems) |
10:40 | 149 |
Superconformal Film Growth - T. Moffat, D. Wheeler, and D. Josell (NIST) |
11:00 | 150 |
Effect of Cl- Concentration on Superfilling Behavior - M. Hayase, M. Taketani, T. Hatsuzawa (Tokyo Institute of Technology), and K. Hayabusa (Ebara Research Company) |
11:20 | 151 |
A Comparison Study of MPSA-Cl-PEG and SPS-Cl-PEG Additive Systems for Copper Electrodeposition - M. Tan and J. Harb (Brigham Young University) |
11:40 | 152 |
Advances in Cu Interconnect Technology - C. Uzoh, H. Talieh, T. Wang, and B. Basol (NuTool Inc.) |
Feature Filling in Damascene Processing
Co-Chairs: T.P. Moffat and J. Reid
Time | Abs# | Title |
14:00 | 153 |
Quantitative Monitoring of Copper Electroplating Additives and Their Breakdown Products - M.J. West, M.R. Anderson, Q. Wang, T.H. Bailey (Metara Inc.), A. Rosenfeld, Z.-W. Sun, and K.P. Ta (Applied Materials) |
14:20 | 154 |
Study on the Mechanism of Electrochemical Mechanical Deposition of Copper Layers - B. Basol, C. Uzoh, and T. Wang (NuTool Inc.) |
14:40 | 155 |
Influence of Leveling Agents on Surface Roughness of Electrodeposited Copper Films - C. Witt (Cookson Electronics) and R. Carpio (International Sematech) |
15:00 | 156 |
Surface Morphology Evolution During the Initial Stages of Electroplating Copper for Dual Damascene Metallization - E. Webb and J. Reid (Novellus Systems, Inc.) |
15:20 | 157 |
Time-Dependent Transport-Kinetics Model for Additives Interactions During ‘Bottom-Up’ Fill - R. Akolkar and U. Landau (Case Western Reserve University) |
15:40 | |
Twenty-Minute Intermission |
16:00 | 158 |
Bottom-up Filling in Cu Electroless Deposition Using Bis-(3-sulfopropyl)-Disulfide (SPS) - C.H. Lee and J.J. Kim (Seoul National University) |
16:20 | 159 |
An in situ Spectroelectrochemical Investigation into the Electrodeposition of Cu from Acidic Sulphate Solutions in the Presence of PEG - B. Bozzini (Universita' di Lecce) |
16:40 | 160 |
Impact of Bath Composition on the Purity and Room Temperature Anneal Characteristics of Thin Copper Films - J. Sukamto and J. Reid (Novellus Systems Inc.) |
17:00 | 161 |
Cross-Sectional Crystallographic Analysis of Copper Electrodeposits for ULSI Metallization by EBSD - H.-J. Lee, K.H. Oh, and D.N. Lee (Seoul National University) |
17:20 | 162 |
Scaling Analysis of Additives Transport Inside Vias with Reactive Sidewalls - R. Akolkar and U. Landau (Case Western Reserve University) |
17:40 | 163 |
Time Evolution of the Scaling Behaviour of Roughness in Electrodeposited Copper Metallization by Atomic Force Microscopy - S. Ahmed and D.N. Buckley (Department of Physics) |
Tuesday, May 11, 2004
Pattern and Cell Scale Modeling/ Deposition on Barriers/Cleaning
Co-Chairs: H. Deligianni and S. Mayer
Time | Abs# | Title |
08:00 | 164 |
A Case Study in Predictive Three-Dimensional Topography Simulation Based on a Level-Set Algorithm - C. Heitzinger, A. Sheikholeslami (Technical University of Vienna), J. Fugger, O. Häberlen, M. Leicht (Infineon Technologies), and S. Selberherr (Technical University of Vienna) |
08:20 | 165 |
Methods for Characterization of Mass Transfer Boundary Layer in an Industrial Semiconductor Wafer Plating Cell - B. Wu, Z. Liu, A. Keigler, and J. Harrell (Nexx Systems) |
08:40 | 166 |
Unsteady Numerical Simulation of the Mass Transfer within a Reciprocating Paddle Electroplating Cell - G. Wilson and P. McHugh (Semitool, Inc.) |
09:00 | 167 |
Uniform Copper Electroplating on Resisitve Substrates - R. Fang (Ebara Technologies, Inc.), K. Ide, H. Suzuki (Ebara Corporation), K. Namiki, H. Kanda, K. Musaka (Ebara Technologies, Inc.), K. Mishima (Ebara Corporation), P.M. Vereecken, K.K. Kwietniak, B.C. Baker, and H. Deligianni (IBM) |
09:20 | 168 |
Field Effect in “Overplating” Above Damascene Trench Clusters - C. Yu and J. Dukovic (Applied Materials) |
09:40 | |
Twenty-Minute Intermission |
10:00 | 169 |
Direct Depositon of Copper on TaN Barrier Layers for ULSI Applications - S. Kim and D. Duquette (Rensselaer Polytechnic Institute) |
10:20 | 170 |
The Electrodeposition of Cu onto Ti and other Substrates: Effect of Concentration - M. Zheng, H. Song, and A. West (Columbia University) |
10:40 | 171 |
Iodine as a Passivation and Surfactant Layer for Cu OPD on Ru - S. Rudenja, N. Magtoto, J. Lei, C. Bjelkvig, J. Liu, and J. Kelber (University of North Texas) |
11:00 | 172 |
Electrochemical Studies of the Ta/HF Interface - I. Suni and H. Li (Clarkson University) |
11:20 | 173 |
Characterization of Dielectric Flash Layer used as Cu-Ultra Low k (k 2.2) Barrier - L. Zhang, C. Li, Y. Chen, C. Li, L. Wong, S. Balakumar, H. Li, M.-R. Moitreyee (Institute of Microelectronics), and H.S. Park (Nanyang Technological Univ.) |
11:40 | 174 |
Fluorocarbon Post-Plasma Etch Residue Cleaning With Radical Anions - C. Timmons and D. Hess (Georgia Institute of Technology) |
Planarization by ECP and/or CMP
Co-Chairs: S.T. Mayer and H. Deligianni
Time | Abs# | Title |
14:00 | 175 |
Cu Electropolishing for Damascene Processing - I. Suni and B. Du (Clarkson University) |
14:40 | 176 |
Scaling Analysis and Application of Cu Electropolishing - S. Brankovic, R. Harris, and E. Johns (Seagate Research Center) |
15:00 | 177 |
Study of BTA Derivatives in Cu Abrasive Free Polishing - B.-W. Huang (National Tsing Hua University), J.-Y. Fang, K.-C. Hsuen (National Chiao Tung University), M.-S. Tsai, B.-T. Dai (National Nano Device Laboratories), M.-S. Feng, C.-F. Yeh (National Chiao Tung University), and H.-C. Shi (National Tsing Hua University) |
15:20 | 178 |
A Comparative Study of Slurry Flow and Transport in CMP Polishing Pads of Three Groove Arrays - G. Muldowney (Rodel Inc.) and D. Tselepidakis (Fluent Inc.) |
15:40 | 179 |
Selection of an Oxidant for Copper CMP - M. Anik (Osmangazi University) |
16:00 | 180 |
Post CMP Defect Study on CVD Ultra Low k Aurora^{TM}$ Integrated with Cu Single Damascene - L. Zhang, S. Balakumar, C. Tsang, C. Li, L. Wong, H. Li, Y. Chen, M.-R. Moitreyee (Institute of Microelectronics), N. Matsuki, A. Fukazawa (ASM Japan K.K,), J. Chee (Cabot Microelectronics Corporation), and H.S. Park (Nanyang Technological Univ.) |
16:20 | 181 |
Slurry Backmixing Effects in CMP Rotary and Belt Polishers - G. Muldowney (Rodel Inc.) |
16:40 | 182 |
An Investigation of the Effects of Wafer Curvature Changes During Copper Damascene Processing - R.A. Carpio, S.-T.L. Dorris (International Sematech), and J. Woodring (Oraxion Diagnostics) |
Wednesday, May 12, 2004
Fundamental Aspects of Electrodeposition
Co-Chairs: G.R. Stafford and J. Stickney
Co-Chairs: E. Podlaha and H. Deligianni
Time | Abs# | Title |
14:00 | 188 |
MEMS Fabrication for Wireless Communications Using Copper Interconnect Technology - H. Deligianni, J. Cotte, C.V. Jahnes, L.P. Buchwalter, N. Hoivik, M. Krishnan, J. Tornello, J.H. Magerlein, and D.E. Seeger (IBM) |
14:40 | 189 |
PVD Silver as a Material of Choice for Microwave Passives in Silicon Technology - V. Levenets, R. Amaya, G. Tarr, and T. Smy (Carleton University) |
15:00 | 190 |
Large Volume, High Performance Electroplated Co-Pt Micromagnets for MEMS Applications - I. Zana, D. Arnold, and M. Allen (Georgia Institute of Technology) |
15:20 | 191 |
Electroplated Permanent Magnet on a Bistable Microvalve as a Part of Single Wafer Foundry Process - J.S. Bintoro and P.J. Hesketh (Georgia Institute of Technology) |
15:40 | 192 |
Magnetically Bistable Actuators for Micro-RF Switch - G.D. Gray, L. Zhu, and P.A. Kohl (Georgia Institute of Technology) |
16:00 | |
Twenty-Minute Intermission |
16:20 | 193 |
CoNi/Cu Multilayers by Electrochemical Deposition - J. Zhang, M. Moldovan, D. Young, and E. Podlaha (Louisiana State University) |
16:40 | 194 |
Comparison of CoFe Films Plated from an Ammonium-Containing Sulfate Bath and from a SBA-Containing Sulfate Bath - I. Shao, E. Cooper (IBM Corp.), H. Xu, C. Bonhote (Hitachi Global Storage Technology), J. Lam, and L.T. Romankiw (IBM Corp.) |
17:00 | 195 |
Ultra Low-Stress FeCoNi Electrodeposits for Magnetic-MEMS - S. Kelcher (University of California, Riverside), D.-Y. Park, J.M. Ko (Hanbat National University), and N.V. Myung (University of California, Riverside) |
17:20 | 196 |
Electrochemically Formed Biaxial Stress Gradients for Improved Electrostatic Actuation - G.D. Gray, M.J. Morgan, and P.A. Kohl (Georgia Institute of Technology) |
17:40 | 197 |
Ageing of Ni Sulfamate Electrolytes During Electrodeposition of MEMS Structures - J. Kelly, S. Goods, G. Lucadamo, A. Talin, and N. Yang (Sandia National Laboratories) |
Thursday, May 13, 2004
Co-Chairs: S. Mayer and G.R. Stafford
Time | Abs# | Title |
08:00 | 198 |
Ferroelectric Properties and Reliabilities of Si-Added PZTN Thin Film - T. Kijima, Y. Hamada, K. Ohashi, T. Aoyama, H. Miyazawa, E. Natori, and T. Shimoda (Seiko Epson Corporation) |
08:20 | 199 |
Atomic Order Flattening and Hydrogen Termination of Si(110) Surface - H. Akahori, K. Nii, A. Teramoto, and T. Ohmi (Tohoku University) |
08:40 | 200 |
Etch Rates and Etch Selectivities of p^{++}$ Doped Si, Undoped Si and Dielectric Films in KOH-Ethylene Glycol-Water and TMAH-Ethylene Glycol-Water Solutions - J.S. Starzynski (Honeywell Electronic Chemicals) |
09:00 | 201 |
Fabrication of Hard Magnetic Micro-arrays by Electroless Co-deposition for MEMS Actuators - S. Guan (University of Minnesota) and B. Nelson (ETH) |
09:20 | 202 |
Formation of Diffusion Barrier Layer on Low-K Material Using All-Wet Fabrication Process - T. Osaka, M. Yoshino, T. Yokoshima (Waseda University), A. Hashimoto, and Y. Hagiwara (Tokyo Ohka Kogyo Co., Ltd.) |
10:00 | 203 |
Kinetics of Cobalt Nucleation on Copper Using Borane Based Reducing Agents - S. Mayer (Novellus Systems, Inc.) |
10:20 | 204 |
Synthesis of Ag/Pd Nanoparticles via Reactive Micelle and its Application to Electroless Plating - C.-C. Yang, Y.-Y. Wang, and C.-C. Wan (National Tsing Hua University) |
10:40 | 205 |
The Study on the Mechanism of Palladium Activated Electroless Copper Deposition - Y.-J. Oh and C.-H. Chung (Sungkyunkwan University) |
11:00 | 206 |
Immersion Plating of Bismuth on Tin-based Alloys for Stabilizing Lead-Free Solders - E. Cooper (IBM Research), C. Goldsmith, C. Mojica, S. Kilpatrick, and R. Alley (IBM Microelectronics Division) |
11:20 | 207 |
Influence Of Build-up Epoxy Layer Surface Roughness On The Adhesion Strength Of Electrochemically Deposited Copper. - S. Siau, A. Vervaet, A. Van Calster, and E. Schacht (University Gent) |
11:40 | 208 |
The Mechanism of Activation of Nonmetallic Materials and the Effect of Surface Pretreatment and Annealing on the Properties of Electrolessly Deposited Ni-P Alloy - T.N. Khoperia, T.I. Zedginidze, L.G. Maisuradze, and G.A. Ramishvili (Georgian Academy of Sciences) |
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