205th Meeting of The Electrochemical Society
May 9-May 14, 2004
PROGRAM INFORMATION
F2 - State-of-the-Art Program on Compound Semiconductors XL
Electronics
Monday, May 10, 2004
Conference Room 12, Level 3
Wide Bandgap Devices and Technology I: Nitride UV Sources
Co-Chairs: N. Buckley and E.B. Stokes
Time | Abs# | Title |
10:00 | 209 |
Deep UV Light Emitting Diodes Based on Short Period Superlattices of AIN/AlGaN - H. Temkin, S.A. Nikishin, and M. Holtz (Texas Tech University) |
10:30 | 210 |
Time-Resolved Optical Studies of Nitride Semiconductors for Ultraviolet Light Emitters - M. Wraback, G. Garrett, A. Sampath, C. Collins, and P. Shen (U.S. Army Research Laboratory) |
11:00 | 211 |
AlGaN-Based Dilute Magnetic Semiconductors For Spin Polarized UV Emission - C. Abernathy, R. Frazier, G. Thaler, B. Gila, S. Pearton, and F. Ren (University of Florida) |
11:30 | 212 |
Recent Advances in III Nitride UV Photonics - H. Jiang and J. Lin (Kansas State University) |
Wide Bandgap Devices and Technology II: Nitride and SiC
Co-Chairs: F. Ren and J. Campbell
Time | Abs# | Title |
14:00 | 213 |
GaN-Based Optoelectronic Devices on Si grown by MOCVD - H. Ishikawa and T. Egawa (Nagoya Institute of Technology) |
14:30 | 214 |
Gateless AlGaN/GaN HEMT Response to Block Co-Polymers - F. Ren (University of Florida) |
15:00 | 215 |
High Indium Content InAlAs/InGaAs HBT Technology for Low-Power, High-Speed Applications - C. Monier, A. Cavus, R. Sandhu, M. Lange, P. Chang, D. Sawdai, V. Gambin, and A. Gutierrez (Northrop Grumman Space Technology) |
15:30 | |
Twenty-Minute Intermission |
15:50 | 216 |
Formation of Oxidized Ohmic Contacts on p-GaN Using Au-based Metals - W.-T. Lin (National Cheng University), S.C. Chung (National Cheng Kung University), and J.R. Gong (Feng Chia University) |
16:10 | 217 |
Dual SiC Photodiode Devices for Simultaneous Two Band Detection - P. Sandvik, D. Brown, J. Fedison, K. Matocha, and J. Kretchmer (General Electric Global Research Center) |
16:40 | 218 |
4H-SiC Avalanche Photodiodes - J. Campbell, X. Guo, and A. Beck (University of Texas) |
Tuesday, May 11, 2004
Growth and Processing of III-V Devices
Co-Chairs: M. Wraback and V. Gambin
Time | Abs# | Title |
09:00 | 219 |
Regrowth in High-Performance InP-based DHBT Devices - V. Gambin, D. Mensa, M. Lange, A. Cavus, P.-C. Chang, D. Sawdai, A. Gutierrez-Aitken, and A. Oki (Northrop Grumman Space Technologies) |
09:30 | 220 |
Mass Production of GaAs Based Optoelectronic Devices in an AIX 2600G3 Reactor in the 49x2" Configuration - C. Sommerhalter (AIXTRON Inc.), B. Schineller, T. Schmitt, K. Christiansen, C.-S. Chiu, and M. Heuken (AIXTRON AG) |
09:50 | |
Twenty-Minute Intermission |
10:10 | 221 |
Growth of High-Quality GaAs Epitaixial Layers on Si Substrate by Using a Novel GeSi Buffer Structure - E.Y. Chang, G. Luo, and T.-H. Yang (National Chiao Tung University) |
10:30 | 222 |
Reduction of Interfacial Contact Resistances through use of Refractory Metals and Regrowth Layers - H. Quach (University of California, Los Angeles), V. Gambin, D. Mensa, D. Sawdai (Northrop Grumman Space Technologies), and M. Goorsky (University of California, Los Angeles) |
10:50 | 223 |
Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Passivation with Bisbenocyclobutene (BCB) - L. Dang, E. Kaneshiro, J. Wang, C. Monier, J. Eldredge, K. Sato, P. Chang, D. Sawdai, A. Gutierrez, R. Bhorania (Northrop Grumman), and M. Goorsky (University of California, Los Angeles) |
11:10 | 224 |
Effects of SI3N4 Passivation on the Electrical Behavior of 0.1 ìm pHEMTs - J.-H. Oh, W.-S. Sul, H.-J. Han, M.-S. Son, J.-K. Rhee, and S.-D. Kim (Dongguk University) |
11:30 | 225 |
Effects of Silicon Nitride Passivation on the Electrical Behavior of 0.1 um pHEMTs - J.-H. Oh, W.-S. Sul, H.-J. Han, M.-S. Son, J.-K. Rhee, and S.-D. Kim (Dongguk University) |
Advanced Compound Semiconductor Technology and Materials
Co-Chairs: P.C. Chang and N. Buckley
Time | Abs# | Title |
14:00 | 226 |
New Technological Bricks for Advanced Laser Structures - S. Garidel, J.-P. Vilcot, and D. Decoster (Institut d'Electronique, de Microelectronique et de Nanotechnologies) |
14:20 | 227 |
850nm Transmission Type Electro-Absorption Modulator on SiO2 Substrate - C. Lethien, J.-P. Vilcot, and D. Decoster (UMR CNRS 8520) |
14:40 | 228 |
Improvement the DC and RF Characteristics of Pseudomorphic Heterojunction Dual V-Groove Gate Doped-Channel FET - S.-W. Tan, M.-K. Hsu, M.-Y. Chu, A.-H. Lin, T.-S. Lin, and W.-S. Lour (National Taiwan Ocean University) |
15:00 | 229 |
On the Multiple-State Switches of an InGaP/GaAs Double Heterostructure-Emitter Bipolar Transistor - J.-H. Tsai, K.-P. Zhu, Y.-C. Chu, and S.-Y. Chiu (National Kaohsiung Normal University) |
15:20 | |
Twenty-Minute Intermission |
15:40 | 230 |
Characteristics and Modeling of Heterojunction Phototransistor with dc Base Bias - S. Tan (National Taiwan Ocean University), H. Chen (National University of Kaohsiung), W. Chen, and W. Lour (National Taiwan Ocean University) |
16:00 | 231 |
AlGaN/GaN -Based Metal-Oxide Semiconductor Diode -Based Hydrogen Gas Sensor - B.S. Kang, F. Ren, B. Gila, C. Abernathy, and S. Pearton (University of Florida) |
16:20 | 232 |
Sensitivity of Pt/ZnO Schottky Diode Characteristics to Hydrogen - S. Kim, B. Kang, K. Ip, Y. Heo, D. Norton, S. Pearton, and F. Ren (University of Florida) |
16:40 | 233 |
Electrical and Optical Characterization of Niobium and Rhenium Doped Molybdenum Diselenide - S.-Y. Hu, M.-C. Cheng, K.-K. Tiong (National Taiwan Ocean University), P.-C. Yen, Y.-S. Huang (National Taiwan University of Science and Technology), and C.-H. Ho (National Dong Hwa University) |
17:00 | 234 |
Electrical and Optical Properties of Polymer Field-Effect Transistors Fabricated on a Paper-based Flexible Substrate - J.Y. Seong (Kyunghee University), Y.H. Kim, D.G. Moon, J.I. Han, W.K. Kim (Korea Electronics Technology Institute (KETI)), and K.S. Chung (Kyunghee University) |
17:20 | 235 |
Impacts of Junction Formation and Band-gap Grading of CuInxGa1-xSe2 Solar Cells on Device Performance - C.-H. Huang (National Dong Hwa University) |
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