236th ECS Meeting Topic Close-up: Oxide Memristors 2

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Topic Close-up #9

Symposium G05: Oxide Memristors 2

Symposium focus: This symposium is dedicated to understaning the defect chemical processes and kinetics, making memristive oxides and device designs and novel in-operando techniques to connect electronic/atomistic to transport relevant changes during memristive operation. Advances on in-operando characterization techniques for resistive switching process defining spatial, temporal, and the energetic extent of the switching processes are also of particular interest. The symposium will also explore the interdisciplinary nature of oxide-memristor research with topics on (but not limited to) memristor theory and modeling, functional oxides and devices, bio-inspired computing paradigms, ionic and electronic conduction in memristive devices, non-volatile information storage via ions and electrons.

Confirmed invited speakers:
• Cheol Seong Hwang – Seoul National University
• Gina Adam – George Washington University
• I-Wei Chen – University of Pennsylvania
• Regina Dittmann – FZ Juelich
• Matthew Marinella – Sandia National Laboratory
• Brian Hoskins – NIST

For additional information on this topic close-up and more, check out the full call for papers with all the 236th ECS Meeting topics being held in Atlanta, GA on October 13-17, 2019.


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