237th ECS Meeting with IMCS 2020 Topic Close-up: Advanced CMOS-Compatible Semiconductor Devices 19

Deadline for submitting abstracts
December 2, 2019
Submit today!

Topic Close-up #2

Symposium H02: Advanced CMOS-Compatible Semiconductor Devices 19

Symposium focus: This symposium will focus on the studies of new devices, circuits and applications for Moore and More-than-Moore technology.

The More-Moore technology including:

  • CMOS compatible devices, circuits and applications of SOI and Bulk MOSFETs, scaled devices, junctionless FET, multi-gate devices, high-power devices, Tunnel-FET devices, semiconductor sensors and memory devices.
  • Device physics and process technology using new materials for noise issues of devices and circuits.
  • Space applications, including low-temperature electronics and radiation hardness.
  • CMOS co-integration of 2D materials (TMDs, etc.).
  • Self-heating and reliability of scaled MOSFET.
  • Devices with high mobility materials, advanced gate stack.

The More-than-Moore technology, including:

  • New MEMS applications
  • Carbon-nanotube and 2D device applications and others.
  • Sensing applications: Health, environment and security.
  • Advanced packaging.
  • 2.5D/3D stacking integration.
Invited speakers from several countries around the world already confirmed their presence:


Anabela Veloso
, Imec, Belgium; “Nanowire/Nanosheet-FETs for ultra-scaled technologies”

Peide Ye, Purdue University, USA; “Fe-FETs and FeS-FETs”

Lukas Czornomaz, IBM Research, Zurich, Switzerland; “InGaAs-on-Silicon Technology Platform For Logic and RF Applications”

Damien Querlioz, CNRS, Univ. Paris-Sud, France; “Advanced CMOS-Compatible Semiconductor Devices for Neuromorphic Computing”

Zlatan Aksamija, University of Massachusetts-Amherst, USA; “Self-heating in Advanced CMOS-Compatible and 2-dimensional Semiconductor Devices”

Kazuya Masu, Tokyo Institute of Technology, Japan; “CMOS-MEMS based microgravity sensor and its application”

Hidekuni Takao, Kagawa University, Japan; “Post-CMOS compatible silicon MEMS nano-tactile sensor for touch feeling discrimination of materials”

Walter Schwarzenbach, Soitec, France; “Low temperature Smartcut process and (for) 3D integration”

Bertrand Pavais, Imec, Belgium; “Advanced transistors for high frequency applications”

Abhinav Kranti, ITT at Indore, India; “Compact modeling and simulation of advanced transistors”

Fernando Guarin, GlobalFoundries, USA; “Reliability in advanced CMOS devices”

DISCLAIMER

All content provided in the ECS blog is for informational purposes only. The opinions and interests expressed here do not necessarily represent ECS's positions or views. ECS makes no representation or warranties about this blog or the accuracy or reliability of the blog. In addition, a link to an outside blog or website does not mean that ECS endorses that blog or website or has responsibility for its content or use.