Submit your manuscripts to the ECS Journal of Solid State Science and Technology (JSS) Focus Issue on Recent Advances in Wide Bandgap III-Nitride Devices and Solid State Lighting: A Tribute to Isamu Akasaki.
About Isamu Akasaki
Isamu Akasaki has devoted much of his research career to the development and advancement of efficient GaN light-emitting diodes via a metalorganic vapor phase epitaxy growth process. This approach led to the discovery of p-type GaN with magnesium doping and ultimately to the invention of the first GaN p-n junction blue/ultraviolet LED in 1989. Subsequent work by Akasaki’s group led to advances in conductivity control of n-type GaN and related alloys by doping with silicon, allowing for the use of hetero structures and quantum wells in the design and fabrication of even more efficient p-n junction structures and the development of wide bandgap III-Nitride semiconductors for solid state lighting and related technologies. These groundbreaking efforts were recognized in 2014 with the Nobel Prize in Physics. (more…)